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51. 发明申请

US20050242361A1 Semiconductor laser apparatus and method of manufacturing the same 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20050242361A1
公开(公告)日：2005-11-03
申请号：US11093024
申请日：2005-03-30
申请人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue
发明人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue
IPC分类号： H01L21/00 , H01S5/026 , H01S5/22 , H01S5/40 , H01L33/00
CPC分类号： H01S5/4025 , H01S5/4087
摘要： Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other.
摘要翻译：第二和第三p侧焊盘电极形成在第一p侧焊盘电极两侧的蓝紫色半导体激光器件的绝缘膜上。第二p侧焊盘电极和第三p侧焊盘电极彼此分开地形成。焊接膜分别形成在第二和第三p侧焊盘电极的上表面上。红色半导体激光器件的第四p侧焊盘电极被粘合到第二p侧焊盘电极上，其中夹有相应的焊料膜。红外半导体激光器件的第五p侧焊盘电极被粘合到第三p侧焊盘电极上，其中夹有相应的焊料膜。第二和第三p侧焊盘电极彼此分开地形成，使得第四和第五p侧焊盘电极彼此电隔离。

52. 发明授权

US08121163B2 Semiconductor laser diode apparatus and method of fabricating the same 失效
标题翻译：半导体激光二极管装置及其制造方法
公开(公告)号：US08121163B2
公开(公告)日：2012-02-21
申请号：US12047924
申请日：2008-03-13
申请人： Saburo Nakashima , Yasuhiko Nomura , Masayuki Hata , Takenori Goto
发明人： Saburo Nakashima , Yasuhiko Nomura , Masayuki Hata , Takenori Goto
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/0207 , H01L2224/45144 , H01L2224/48091 , H01L2224/73265 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/22 , H01S5/3201 , H01S5/32341 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.
摘要翻译：获得能够抑制从半导体激光二极管元件发射的激光束的发射位置和发射方向的变化的半导体激光二极管装置。该半导体激光二极管装置包括：半导体激光二极管元件，其具有沿着与第一方向相交的第一方向或与第一方向交叉的第二方向的翘曲;以及半导体激光二极管元件的翘曲的凸侧固定，其中所述半导体激光二极管元件的第一端之间沿所述第一和第二方向之间的较大翘曲的方向与所述基座之间的距离小于所述半导体激光二极管元件的第二端之间的距离，第一和第二个方向和基地之间大的扭曲。

53. 发明授权

US07978744B2 Nitride based semiconductor laser device with oxynitride protective films on facets 有权
标题翻译：氮化物基半导体激光器件，面上有氮氧化物保护膜
公开(公告)号：US07978744B2
公开(公告)日：2011-07-12
申请号：US12236616
申请日：2008-09-24
申请人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
发明人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
IPC分类号： H01S5/028
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0282
摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.
摘要翻译：氮化物基半导体激光器件的一个面由（0001）的解理面构成，另一个面由（000 1）的解理面构成。因此，一个面和另一个面分别是Ga极平面和N极平面。位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。在一个面上形成包括氮作为构成元素的第一保护膜。在另一方面形成包括氧作为构成元素的第二保护膜。

54. 发明授权

US07924898B2 Nitride based semiconductor laser device with oxynitride protective coatings on facets 失效
标题翻译：基于氮化物的半导体激光器件，具有氧氮化物保护涂层
公开(公告)号：US07924898B2
公开(公告)日：2011-04-12
申请号：US12236627
申请日：2008-09-24
申请人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
发明人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
IPC分类号： H01S5/028
CPC分类号： H01S5/32341 , H01S5/0282 , H01S5/0287 , H01S5/1082 , H01S5/227 , H01S5/3202 , H01S2301/176
摘要： One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.
摘要翻译：氮化物基半导体激光器件的一个面和另一个面分别由（0001）的解理面和（000 1）的解理面构成。因此，一个面和另一个面分别是Ga极平面和N极平面。位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。在一个面上形成包括氧作为构成元素的第一保护膜。在另一方面形成包括氮作为构成元素的第二保护膜。

55. 发明授权

US07869480B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07869480B2
公开(公告)日：2011-01-11
申请号：US12126365
申请日：2008-05-23
申请人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
发明人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
IPC分类号： H01S3/04
CPC分类号： H01S5/10 , H01L2224/73265 , H01L2924/01019 , H01S5/0207 , H01S5/02272 , H01S5/02276 , H01S5/3201
摘要： In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.
摘要翻译：在半导体激光装置中，将半导体激光元件固定在基底上，使得半导体激光元件的翘曲的凸面与基体之间的距离随着半导体激光元件的翘曲沿对应于半导体激光元件的第一方向而变化在与距离最大的区域的附近对应的电极层的一部分周围设置引线接合部的情况下的空腔的延伸方向。

56. 发明申请

US20100284433A1 SEMICONDUCTOR LASER DEVICE AND DISPLAY 审中-公开
标题翻译：半导体激光器件和显示器
公开(公告)号：US20100284433A1
公开(公告)日：2010-11-11
申请号：US12812715
申请日：2009-09-17
申请人： Masayuki Hata , Yasumitsu Kunoh , Yasuhiko Nomura , Saburo Nakashima
发明人： Masayuki Hata , Yasumitsu Kunoh , Yasuhiko Nomura , Saburo Nakashima
IPC分类号： H01S5/40 , H01S5/34 , H01S5/343 , H01S5/026
CPC分类号： H04N9/3161 , B82Y20/00 , H01L2224/48091 , H01S5/0216 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/02476 , H01S5/0425 , H01S5/22 , H01S5/24 , H01S5/34326 , H01S5/34333 , H01S5/4043 , H01S5/4093 , H04N9/3105 , H04N9/3111 , H01L2924/00014
摘要： A semiconductor laser device capable of easily obtaining a desired hue is obtained. This semiconductor laser device (100) includes a green semiconductor laser element (30) having one or a plurality of laser beam emitting portions, a blue semiconductor laser element (50) having one or a plurality of laser beam emitting portions, and a red semiconductor laser element (10) having one or a plurality of laser beam emitting portions. At least two semiconductor laser elements among the green semiconductor laser element, the blue semiconductor laser element and the red semiconductor laser element have such a relation that the number of the laser beam emitting portions of the semiconductor laser element whose total output power is relatively small is larger than the number of the laser beam emitting portions of the semiconductor laser element, having a plurality of laser beam emitting portions, whose total output power is relatively large, or the number of the semiconductor laser element, having one laser beam emitting portion, whose output power is relatively large.
摘要翻译：获得能够容易地获得期望色调的半导体激光器件。该半导体激光装置（100）包括具有一个或多个激光束发射部的绿色半导体激光元件（30），具有一个或多个激光束发射部的蓝色半导体激光元件（50）和红色半导体具有一个或多个激光束发射部分的激光元件（10）。绿色半导体激光元件，蓝色半导体激光元件和红色半导体激光元件中的至少两个半导体激光元件具有这样的关系：总输出功率相对较小的半导体激光元件的激光束发射部分的数量是大于具有多个总输出功率相对较大的激光束发射部分的半导体激光元件的激光束发射部分的数量或具有一个激光束发射部分的半导体激光元件的数量，其中，输出功率比较大。

57. 发明授权

US07567605B2 Semiconductor laser device and method of fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07567605B2
公开(公告)日：2009-07-28
申请号：US11393891
申请日：2006-03-31
申请人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
发明人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
IPC分类号： H01S5/00
CPC分类号： H01S5/30 , H01L24/05 , H01L2224/04042 , H01L2224/48463 , H01L2224/73265 , H01L2924/00
摘要： A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.
摘要翻译：获得能够降低阈值电流并提高发光效率的半导体激光器件及其制造方法。该半导体激光器件包括具有主表面和半导体元件层的半导体衬底，该半导体衬底形成在半导体衬底的主表面上，其主表面相对于半导体衬底的主表面大致倾斜并且包括发射层。

58. 发明申请

US20090086783A1 NITRIDE BASED SEMICONDUCTOR LASER DEVICE 有权
标题翻译：基于氮化物的半导体激光器件
公开(公告)号：US20090086783A1
公开(公告)日：2009-04-02
申请号：US12236616
申请日：2008-09-24
申请人： Shingo KAMEYAMA , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
发明人： Shingo KAMEYAMA , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
IPC分类号： H01S5/026
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0282
摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.
摘要翻译：氮化物基半导体激光器件的一个面由（0001）的解理面构成，其另一个面由（000

59. 发明授权

US07450622B2 Nitride-based semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US07450622B2
公开(公告)日：2008-11-11
申请号：US11723846
申请日：2007-03-22
申请人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
发明人： Masayuki Hata , Yasuhiko Nomura , Daijiro Inoue
IPC分类号： H01S5/00
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/32 , H01S5/0213 , H01S5/0422 , H01S5/0425 , H01S5/2022 , H01S5/204 , H01S5/2205 , H01S5/2206 , H01S5/2216 , H01S5/2219 , H01S5/2224 , H01S5/2226 , H01S5/2231 , H01S5/3063 , H01S5/3213 , H01S5/32341 , H01S5/34333 , H01S2301/173 , H01S2301/18 , H01S2304/04
摘要： A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.
摘要翻译：获得能够稳定横向光束缚的氮化物系半导体发光元件。该氮化物系半导体发光元件具有形成在发光层上的发光层，包层，具有第一氮化物系半导体层，具有电流通路部和电流阻挡层，形成为覆盖侧面的电流路径部分，包括第二氮化物基半导体层，而电流阻挡层形成在电流路径部分附近，并且没有电流阻挡层的区域包括在不在电流附近的区域中路径部分。因此，电流阻挡层的宽度减小，由此施加到电流阻挡层的应变松弛。因此，可以提高电流阻挡层的厚度，从而稳定横向光的限制。

60. 发明申请

US20070077669A1 Nitride-based semiconductor device and method of fabricating the same 审中-公开
公开(公告)号：US20070077669A1
公开(公告)日：2007-04-05
申请号：US11607896
申请日：2006-12-04
申请人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
发明人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/00
CPC分类号： H01S5/32341 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/2201 , H01S5/305 , H01S5/34333 , H01S2304/04
摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

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