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51. 发明授权

US06677215B2 Method of fabricating a diode protecting a gate electrode of a field effect transistor 失效
标题翻译：制造保护场效应晶体管的栅电极的二极管的方法
公开(公告)号：US06677215B2
公开(公告)日：2004-01-13
申请号：US10309022
申请日：2002-12-04
申请人： Yasuo Yamaguchi
发明人： Yasuo Yamaguchi
IPC分类号： H01L21331
CPC分类号： H01L27/0255
摘要： There is provided a method including the steps of: forming spaced gate patterns on a main surface of a semiconductor substrate; forming sidewall films on the gate patterns, respectively, at their respective sidewalls facing each other; and, with the gate patterns and the sidewall films used as a mask, implanting a dopant in the semiconductor substrate to form a doped region. The doped region and a substrate region adjacent thereto together form a diode protecting a gate electrode of a field effect transistor. The doped region as a constituent of the diode can be minimized in size to be smaller than a limit of resolution.
摘要翻译：提供了一种方法，包括以下步骤：在半导体衬底的主表面上形成间隔开的栅极图案; 在其各自的侧壁分别在所述栅极图案上形成侧壁膜; 并且以栅极图案和侧壁膜用作掩模，在半导体衬底中注入掺杂剂以形成掺杂区域。掺杂区域和与其相邻的衬底区域一起形成保护场效应晶体管的栅电极的二极管。作为二极管的组成部分的掺杂区域的尺寸可以最小化以小于分辨率的极限。

52. 发明授权

US06653656B2 Semiconductor device formed on insulating layer and method of manufacturing the same 失效
标题翻译：绝缘层上形成的半导体器件及其制造方法
公开(公告)号：US06653656B2
公开(公告)日：2003-11-25
申请号：US10336758
申请日：2003-01-06
申请人： Toshiaki Iwamatsu , Yasuo Yamaguchi , Shigenobu Maeda , Shoichi Miyamoto , Akihiko Furukawa , Yasuo Inoue
发明人： Toshiaki Iwamatsu , Yasuo Yamaguchi , Shigenobu Maeda , Shoichi Miyamoto , Akihiko Furukawa , Yasuo Inoue
IPC分类号： H01L2904
CPC分类号： H01L21/76297 , H01L21/26586 , H01L21/764 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/78606 , H01L29/78612 , H01L29/78633 , H01L29/78654
摘要： In a semiconductor device having an SOI structure and a method of manufacturing the same, influence by a parasitic transistor can be prevented, and no disadvantage is caused in connection with a manufacturing process. In this semiconductor device, an upper side portion of a semiconductor layer is rounded. Thereby, concentration of an electric field at the upper side portion of the semiconductor layer can be prevented. As a result, lowering of a threshold voltage of a parasitic transistor can be prevented, so that the parasitic transistor does not adversely affect subthreshold characteristics of a regular transistor. Owing to provision of a concavity of a U-shaped section, generation of etching residue can be prevented when etching a gate electrode for patterning the same. Thereby, a disadvantage is not caused in connection with the manufacturing process.
摘要翻译：在具有SOI结构的半导体器件及其制造方法中，可以防止寄生晶体管的影响，并且与制造过程相关的缺点不会产生。在该半导体器件中，半导体层的上侧部分是圆形的。由此，可以防止半导体层的上侧部分的电场集中。结果，可以防止寄生晶体管的阈值电压的降低，使得寄生晶体管不会对正常晶体管的亚阈值特性产生不利影响。通过设置U形截面的凹部，当蚀刻用于图案化的栅电极时，可以防止产生蚀刻残留。因此，不会在制造过程中引起缺点。

53. 发明授权

US06646306B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06646306B2
公开(公告)日：2003-11-11
申请号：US09985020
申请日：2001-11-01
申请人： Toshiaki Iwamatsu , Takashi Ipposhi , Hideki Naruoka , Nobuyoshi Hattori , Shigeto Maegawa , Yasuo Yamaguchi , Takuji Matsumoto
发明人： Toshiaki Iwamatsu , Takashi Ipposhi , Hideki Naruoka , Nobuyoshi Hattori , Shigeto Maegawa , Yasuo Yamaguchi , Takuji Matsumoto
IPC分类号： H01L2701
CPC分类号： H01L21/76286 , H01L21/76264 , H01L21/76281 , H01L21/76283 , H01L21/84 , H01L27/1203 , H01L29/458
摘要： A semiconductor device that prevents metal pollution and a method of manufacturing the semiconductor device. A region (NR) and a region (PR) are defined by a trench isolation oxide film, a polysilicon film selectively provided on the trench isolation oxide film, a silicon layer provided on the polysilicon film, and a side wall spacer provided on a side surface of the polysilicon film. The polysilicon film is provided in a position corresponding to a top of a PN junction portion JP of a P-type well region and an N-type well region in a SOI layer across the two well regions.
摘要翻译：一种防止金属污染的半导体器件以及半导体器件的制造方法。区域（NR）和区域（PR）由沟槽隔离氧化膜，选择性地设置在沟槽隔离氧化膜上的多晶硅膜，设置在多晶硅膜上的硅层和设置在侧面上的侧壁隔离物多晶硅膜的表面。多晶硅膜设置在对应于跨越两个阱区域的SOI层中的P型阱区域和N型阱区域的PN结部分JP的顶部的位置。

54. 发明授权

US06642604B2 Semiconductor device with resistor layer having heat radiation path to semiconductor substrate 有权
公开(公告)号：US06642604B2
公开(公告)日：2003-11-04
申请号：US10208993
申请日：2002-08-01
申请人： Yasuo Yamaguchi
发明人： Yasuo Yamaguchi
IPC分类号： H01L2900
CPC分类号： H01L28/20 , H01L27/0802 , H01L2924/0002 , H01L2924/00
摘要： A resistor layer (5) is formed on an isolation insulating film (4) selectively formed in a major surface (1S) of a semiconductor substrate (1). An interlayer insulation film (7) covering the resistor layer (5) has first and second plugs (9, 19) buried therein in the form of buried interconnections. The first and second plugs (9, 19) provide connection not only between an end portion of the resistor layer (5) and first and second interconnection layers (8, 18) but also between the end portion of the resistor layer (5) and the major surface (1S) of the semiconductor substrate (1).

55. 发明授权

US06568093B2 Rotation detector 失效
标题翻译：旋转检测器
公开(公告)号：US06568093B2
公开(公告)日：2003-05-27
申请号：US09817609
申请日：2001-03-26
申请人： Katsuya Kogiso , Shinji Usui , Keiichi Shinohara , Yasuo Yamaguchi
发明人： Katsuya Kogiso , Shinji Usui , Keiichi Shinohara , Yasuo Yamaguchi
IPC分类号： G01B700
CPC分类号： G01D5/147
摘要： A rotation detector resists magnetic disturbances from sources near the detector. The rotation detector includes a rotor on which iron magnetic path changing pieces are fixed at predetermined intervals. A first bias magnet and a first magneto-resistive element for detecting the flux of the first bias magnet oppose the magnetic path changing pieces. A magnetic guide plate is located to guide disturbing magnetic flux in predetermined directions. The disturbing magnetic flux thus fails to adversely affect the first magneto-resistive element.
摘要翻译：旋转检测器抵抗来自检测器附近的源的磁扰动。旋转检测器包括转子，在该转子上以预定间隔固定铁磁路改变件。用于检测第一偏置磁体的磁通量的第一偏置磁体和第一磁阻元件与磁路改变件相对。磁导板被定位成引导预定方向的扰动磁通。因此，干扰的磁通量不能不利地影响第一磁阻元件。

56. 发明授权

US06545602B2 Fire alarm system 失效
标题翻译：火警系统
公开(公告)号：US06545602B2
公开(公告)日：2003-04-08
申请号：US09983266
申请日：2001-10-23
申请人： Yasuo Yamaguchi , Makoto Sakihara , Kouichi Hishino , Takahiro Oki , Munehiro Onji
发明人： Yasuo Yamaguchi , Makoto Sakihara , Kouichi Hishino , Takahiro Oki , Munehiro Onji
IPC分类号： G08B100
CPC分类号： G08B17/00 , G08B26/004
摘要： A fire alarm system provided with a fire receiver (1) to which a plurality of fire sensors and controlled apparatuses are connected. The fire receiver (1) comprises a LAN interface (11) for connecting with other fire receivers. When a fire sensor issues an alarm, the fire receiver transmits the fire information over the LAN together with a group number set in advance, and displays (12) only the fire information of the same group number when the fire receiver receives fire information transmitted from the other fire receivers via the LAN. Thus, even is a plurality of fire receivers are used in a large building divided into ridge sections, fire information can be shared without causing disorder.
摘要翻译：一种火灾报警系统，配备有与多个火灾传感器和受控设备连接的火灾接收器（1）。火灾接收器（1）包括用于与其他火灾接收器连接的LAN接口（11）。当火灾传感器发出警报时，火灾接收者将通过LAN发送火灾信息和预先设置的组号，并且当火情接收器接收到从火警接收器发送的火情信息时，仅显示（12）相同组号的火情信息其他火灾接收器通过LAN。因此，即使在大型建筑物中使用多个火灾接收器，分为脊部，火灾信息可以共享而不引起混乱。

57. 发明授权

US06335267B1 Semiconductor substrate and method of fabricating semiconductor device 失效
标题翻译：半导体衬底及制造半导体器件的方法
公开(公告)号：US06335267B1
公开(公告)日：2002-01-01
申请号：US09667498
申请日：2000-09-22
申请人： Toshiaki Iwamatsu , Yasuo Yamaguchi , Takashi Ipposhi , Shigenobu Maeda , Yuichi Hirano
发明人： Toshiaki Iwamatsu , Yasuo Yamaguchi , Takashi Ipposhi , Shigenobu Maeda , Yuichi Hirano
IPC分类号： H01L2120
CPC分类号： H01L27/1203 , H01L21/84
摘要： A semiconductor substrate and a method of fabricating a semiconductor device are provided. An oxide film (13) is formed by oxidizing an edge section and a lower major surface of an SOI substrate (10). This oxidizing step is performed in a manner similar to LOCOS (Local Oxide of Silicon) oxidation by using an oxide film (11) exposed on the edge section and lower major surface of the SOI substrate (10) as an underlying oxide film. Then, the thickness of the oxide film (13) is greater than that of the oxide film (11) on the edge section and lower major surface of the SOI substrate (10). The semiconductor substrate prevents particles of dust from being produced at the edge thereof.
摘要翻译：提供半导体衬底和制造半导体器件的方法。氧化膜（13）通过氧化SOI衬底（10）的边缘部分和下主表面而形成。通过使用暴露在SOI衬底（10）的边缘部分和下部主表面上的氧化膜（11）作为下面的氧化膜，以类似于LOCOS（硅的局部氧化物）氧化的方式进行该氧化步骤。然后，氧化膜（13）的厚度大于SOI衬底（10）的边缘部分和下主表面上的氧化物膜（11）的厚度。半导体衬底防止在其边缘处产生灰尘颗粒。

58. 发明授权

US06236325B1 Position detector with irregularity detectable function and cable for use in the same 有权
标题翻译：具有不规则检测功能的位置检测器和用于其的电缆
公开(公告)号：US06236325B1
公开(公告)日：2001-05-22
申请号：US09466874
申请日：1999-12-20
申请人： Shingo Kuroki , Yasuo Yamaguchi , Hiroaki Kawada
发明人： Shingo Kuroki , Yasuo Yamaguchi , Hiroaki Kawada
IPC分类号： G08B2100
CPC分类号： G01D5/24457 , G01D5/34707 , G01D7/00
摘要： A position detector and cable for use in the same can be provided for reducing the space and cost as well as easing maintenance. A scale unit (1) generates an alarm signal (ALAM) for informing of an error when it occurs associated with generating position pulses (PA, PB and PZ). A signal cable (6) transfers the alarm signal (ALAM) to a connector (7). The connector (7) contains an alarm indicator (31) that lights on in response to the alarm signal (ALAM) output from the scale unit (1) when an irregularity occurs.
摘要翻译：可以提供用于其中的位置检测器和电缆，以减少空间和成本以及减轻维护。刻度单元（1）产生用于在与发生位置脉冲（PA，PB和PZ）相关联的情况下通知错误的报警信号（ALAM）。信号线（6）将报警信号（ALAM）传送到连接器（7）。当发生不规则时，连接器（7）包含响应于从刻度单元（1）输出的报警信号（ALAM）点亮的报警指示器（31）。

59. 发明授权

US06198134B1 Semiconductor device having a common substrate bias 失效
标题翻译：具有公共衬底偏置的半导体器件
公开(公告)号：US06198134B1
公开(公告)日：2001-03-06
申请号：US09056616
申请日：1998-04-08
申请人： Yasuo Inoue , Tadashi Nishimura , Yasuo Yamaguchi , Toshiaki Iwamatsu
发明人： Yasuo Inoue , Tadashi Nishimura , Yasuo Yamaguchi , Toshiaki Iwamatsu
IPC分类号： H01L2701
CPC分类号： H01L21/8238 , H01L21/84 , H01L23/4825 , H01L27/0921 , H01L27/1203 , H01L29/78609 , H01L29/78612 , H01L29/78615 , H01L29/78621 , H01L29/78645 , H01L29/78654 , H01L2924/0002 , H01L2924/00
摘要： According to a semiconductor device of the present invention, a field oxide film is formed so as to cover the main surface of an SOI layer and to reach the main surface of a buried oxide film. As a result, a pMOS active region of the SOI and an nMOS active region of the SOI can be electrically isolated completely. Therefore, latchup can be prevented completely. As a result, it is possible to provide a semiconductor device using an SOI substrate which can implement high integration by eliminating reduction of the breakdown voltage between source and drain, which was a problem of a conventional SOI field effect transistor, as well as by efficiently disposing a body contact region, which hampers high integration, and a method of manufacturing the same.
摘要翻译：根据本发明的半导体器件，形成场致氧化膜以覆盖SOI层的主表面并到达掩埋氧化膜的主表面。结果，可以完全电隔离SOI的pMOS有源区和SOI的nMOS有源区。因此，可以完全防止闭锁。结果，可以提供使用SOI衬底的半导体器件，该SOI衬底可以通过消除源极和漏极之间的击穿电压的降低来实现高集成度，这是常规SOI场效应晶体管的问题，以及有效地设置妨碍高集成度的身体接触区域及其制造方法。

60. 发明授权

US6150696A Semiconductor substrate and method of fabricating semiconductor device 失效
公开(公告)号：US6150696A
公开(公告)日：2000-11-21
申请号：US55903
申请日：1998-04-07
申请人： Toshiaki Iwamatsu , Yasuo Yamaguchi , Takashi Ipposhi , Shigenobu Maeda , Yuichi Hirano
发明人： Toshiaki Iwamatsu , Yasuo Yamaguchi , Takashi Ipposhi , Shigenobu Maeda , Yuichi Hirano
IPC分类号： H01L21/02 , H01L21/84 , H01L27/12 , H01L27/01
CPC分类号： H01L27/1203 , H01L21/84
摘要： A semiconductor substrate and a method of fabricating a semiconductor device are provided. An oxide film (13) is formed by oxidizing an edge section and a lower major surface of an SOI substrate (10). This oxidizing step is performed in a manner similar to LOCOS (Local Oxide of Silicon) oxidation by using an oxide film (11) exposed on the edge section and lower major surface of the SOI substrate (10) as an underlying oxide film. Then, the thickness of the oxide film (13) is greater than that of the oxide film (11) on the edge section and lower major surface of the SOI substrate (10). The semiconductor substrate prevents particles of dust from being produced at the edge thereof.

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