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    • 56. 发明授权
    • Integrated circuit device
    • 集成电路器件
    • US5973525A
    • 1999-10-26
    • US049383
    • 1998-03-27
    • Yasuhiro Fujii
    • Yasuhiro Fujii
    • G11C11/407H03K5/135H03L7/00H03L7/081H03L7/06
    • H03L7/0814Y10S331/02
    • In the present invention, when a phase comparison circuit, which compares the phase of a reference clock divided by a frequency divider that frequency divides a supplied clock, to that of a variable clock, detects the phase-matching of the two clocks, it generates a phase synchronization detection signal, and this phase synchronization detection signal increases the frequency division ratio of a frequency divider, lowering the frequency of operation of the phase comparator. The present invention is further characterized in that, at reset, when an inactive state becomes an active state, the time required to phase synchronize both clocks is shortened by resetting the above-described phase synchronization detection signal, thereby setting the frequency division ratio of the frequency divider to its original low state, and the frequency of operation of the phase comparator to its original high state. In accordance with the above-described invention, when phase synchronization is detected in an active state, the frequency division ratio of the frequency divider is increased, and the frequency of operation of the phase comparator is lowered, thus curbing power consumption. Then, at reset, this phase synchronization detection signal is reset, thus returning the frequency division ratio of the frequency divider to its original low state, and raising the frequency of phase comparator operation.
    • 在本发明中,当比较基准时钟除以频率分频时钟的分频器的相位与相位比较电路相比,可以检测出两个时钟的相位匹配时,产生 相位同步检测信号,并且该相位同步检测信号增加分频器的分频比,降低相位比较器的工作频率。 本发明的特征还在于,在复位时,当非活动状态变为有效状态时,通过复位上述相位同步检测信号来缩短相位同步两个时钟所需的时间,从而将 分频器到其原始低电平状态,并将相位比较器的工作频率提高到原来的高电平状态。 根据上述发明,当在有效状态下检测到相位同步时,分频器的分频比增加,相位比较器的工作频率降低,从而抑制功耗。 然后,在复位时,该相位同步检测信号被复位,从而将分频器的分频比返回到其原始低状态,并提高相位比较器操作的频率。
    • 57. 发明授权
    • Semiconductor memory with hierarchical bit lines
    • 具有分层位线的半导体存储器
    • US5828594A
    • 1998-10-27
    • US893072
    • 1997-07-15
    • Yasuhiro Fujii
    • Yasuhiro Fujii
    • G11C7/14G11C7/18G11C11/4097G11C11/4099G11C5/06
    • G11C11/4097G11C11/4099G11C7/14G11C7/18
    • A semiconductor memory with hierarchical bit lines has a plurality of local bit lines, a plurality of global bit lines, a plurality of word lines, a plurality of memory cells each arranged at a connection portion between each local bit line and each word line, and a plurality of transfer gates. The local bit lines are connected to the global bit line through the transfer gates, which are arranged around the centers of the local bit lines. Further, the semiconductor memory has a dummy bit line portion having a dummy bit line that is charged up to a precharging reference voltage during a standby period and is set to a floating state during an active period, to provide the sensing reference voltage. In addition, the semiconductor has sense amplifiers each being formed in an area matching with the interval of a given number of the global bit lines and each receiving signals from a pair of the global bit lines arranged on both sides thereof.
    • 具有分层位线的半导体存储器具有多个局部位线,多个全局位线,多个字线,每个布置在每个局部位线与每个字线之间的连接部分处的多个存储器单元,以及 多个传送门。 局部位线通过传输门连接到全局位线,传输门被布置在局部位线的中心附近。 此外,半导体存储器具有虚拟位线部分,其具有在待机期间被充电至预充电参考电压的虚拟位线,并且在有效时段期间被设置为浮置状态,以提供感测参考电压。 此外,半导体具有读出放大器,每个读出放大器形成在与给定数量的全局位线的间隔匹配的区域中,并且每个接收来自布置在其两侧的一对全局位线的信号。
    • 58. 发明授权
    • Semiconductor memory with hierarchical bit lines
    • 具有分层位线的半导体存储器
    • US5701269A
    • 1997-12-23
    • US668332
    • 1996-06-25
    • Yasuhiro Fujii
    • Yasuhiro Fujii
    • G11C7/14G11C7/18G11C11/4097G11C11/4099G11C7/00
    • G11C11/4097G11C11/4099G11C7/14G11C7/18
    • A semiconductor memory with hierarchical bit lines has a plurality of local bit lines, a plurality of global bit lines, a plurality of word lines, a plurality of memory cells each arranged at a connection portion between each local bit line and each word line, and a plurality of transfer gates. The local bit lines are connected to the global bit line through the transfer gates, which are arranged around the centers of the local bit lines. Further, the semiconductor memory has a dummy bit line portion having a dummy bit line that is charged up to a precharging reference voltage during a standby period and is set to a floating state during an active period, to provide the sensing reference voltage. In addition, the semiconductor has sense amplifiers each being formed in an area matching with the interval of a given number of the global bit lines and each receiving signals from a pair of the global bit lines arranged on both sides thereof.
    • 具有分层位线的半导体存储器具有多个局部位线,多个全局位线,多个字线,每个布置在每个局部位线与每个字线之间的连接部分处的多个存储器单元,以及 多个传送门。 局部位线通过传输门连接到全局位线,传输门被布置在局部位线的中心附近。 此外,半导体存储器具有虚拟位线部分,其具有在待机期间被充电至预充电参考电压的虚拟位线,并且在有效时段期间被设置为浮置状态,以提供感测参考电压。 此外,半导体具有读出放大器,每个读出放大器形成在与给定数量的全局位线的间隔匹配的区域中,并且每个接收来自布置在其两侧的一对全局位线的信号。