专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20080118754A1 Single crystal silicon rod fabrication methods and a single crystal silicon rod structure 有权
标题翻译：单晶硅棒制造方法和单晶硅棒结构
公开(公告)号：US20080118754A1
公开(公告)日：2008-05-22
申请号：US11976009
申请日：2007-10-19
申请人： Wenxu Xianyu , Young-soo Park , Hans S. Cho , Huaxiang Yin , Hyuck Lim
发明人： Wenxu Xianyu , Young-soo Park , Hans S. Cho , Huaxiang Yin , Hyuck Lim
IPC分类号： C30B13/06 , B32B9/00
CPC分类号： C30B29/06 , C30B13/24 , C30B25/02 , C30B29/60 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02664 , H01L21/02675 , H01L29/42392 , H01L29/78696 , Y10T428/2962
摘要： A method of fabricating a single crystal silicon rod may include forming an insulation layer on a substrate, forming a hole in the insulation layer, selectively growing silicon in the hole, forming a silicon layer on the hole and on the insulation layer, forming a rod pattern on the silicon layer in a direction that is non-radial with respect to the hole, and melting the silicon layer and crystallizing the silicon layer by illuminating a laser beam on the silicon layer where the rod pattern is formed to generate a nucleation site at a position corresponding to the hole. According to the method, a single crystal silicon rod having no defects may be formed.
摘要翻译：制造单晶硅棒的方法可以包括在衬底上形成绝缘层，在绝缘层中形成孔，选择性地生长孔中的硅，在孔和绝缘层上形成硅层，形成棒在相对于孔的非径向的方向上在硅层上形成图案，并且通过照射形成棒图案的硅层上的激光束来熔化硅层并使硅层结晶，从而在硅层上产生成核位置对应于孔的位置。根据该方法，可以形成没有缺陷的单晶硅棒。

52. 发明申请

US20100208368A1 Microlens, an image sensor including a microlens, method of forming a microlens and method for manufacturing an image sensor 失效
标题翻译：微透镜，包括微透镜的图像传感器，形成微透镜的方法和用于制造图像传感器的方法
公开(公告)号：US20100208368A1
公开(公告)日：2010-08-19
申请号：US12662607
申请日：2010-04-26
申请人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： G02B7/02
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327
摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.
摘要翻译：提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

53. 发明授权

US08508009B2 Microlens and an image sensor including a microlens 失效
标题翻译：微透镜和包括微透镜的图像传感器
公开(公告)号：US08508009B2
公开(公告)日：2013-08-13
申请号：US12662607
申请日：2010-04-26
申请人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L31/062 , H01L27/146 , H01L31/107
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327
摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.
摘要翻译：提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

54. 发明授权

US08187905B2 Method of forming a microlens and a method for manufacturing an image sensor 失效
标题翻译：形成微透镜的方法和图像传感器的制造方法
公开(公告)号：US08187905B2
公开(公告)日：2012-05-29
申请号：US12805821
申请日：2010-08-20
申请人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L31/062 , H01L31/107
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327
摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.
摘要翻译：提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

55. 发明申请

US20110008920A1 Microlens, an image sensor including a microlens, method of forming a microlens and method for manufacturing an image sensor 失效
标题翻译：微透镜，包括微透镜的图像传感器，形成微透镜的方法和用于制造图像传感器的方法
公开(公告)号：US20110008920A1
公开(公告)日：2011-01-13
申请号：US12805821
申请日：2010-08-20
申请人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L33/00 , H01L31/18
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327
摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.
摘要翻译：提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

56. 发明申请

US20080026547A1 Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory device 有权
标题翻译：形成多晶硅图案的方法，具有多晶硅图案的二极管，具有多晶硅图案的多层交叉点电阻式存储器件以及制造二极管和存储器件的方法
公开(公告)号：US20080026547A1
公开(公告)日：2008-01-31
申请号：US11713738
申请日：2007-03-05
申请人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A method of forming a poly-silicon pattern may include forming an amorphous silicon pattern on a lower layer; forming a capping layer on the substrate covering the amorphous silicon pattern; poly-crystallizing the amorphous silicon pattern using an excimer laser annealing process; and removing the capping layer.
摘要翻译：形成多晶硅图案的方法可以包括在下层上形成非晶硅图案; 在覆盖所述非晶硅图案的所述基板上形成覆盖层; 使用准分子激光退火工艺多晶结晶非晶硅图案; 并去除覆盖层。

57. 发明授权

US08405062B2 Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory device 有权
标题翻译：形成多晶硅图案的方法，具有多晶硅图案的二极管，具有多晶硅图案的多层交叉点电阻式存储器件以及制造二极管和存储器件的方法
公开(公告)号：US08405062B2
公开(公告)日：2013-03-26
申请号：US11713738
申请日：2007-03-05
申请人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： H01L47/00
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2026 , H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： A method of forming a poly-silicon pattern may include forming an amorphous silicon pattern on a lower layer; forming a capping layer on the substrate covering the amorphous silicon pattern; poly-crystallizing the amorphous silicon pattern using an excimer laser annealing process; and removing the capping layer.
摘要翻译：形成多晶硅图案的方法可以包括在下层上形成非晶硅图案; 在覆盖所述非晶硅图案的所述基板上形成覆盖层; 使用准分子激光退火工艺多晶结晶非晶硅图案; 并去除覆盖层。

58. 发明授权

US08097499B2 Semiconductor device and methods thereof 有权
标题翻译：半导体器件及其方法
公开(公告)号：US08097499B2
公开(公告)日：2012-01-17
申请号：US11702624
申请日：2007-02-06
申请人： Wenxu Xianyu , Young-soo Park , Jun-ho Lee , Hyuk Lim , Hans S. Cho , Huaxiang Yin
发明人： Wenxu Xianyu , Young-soo Park , Jun-ho Lee , Hyuk Lim , Hans S. Cho , Huaxiang Yin
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02609 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/02516 , H01L21/02532
摘要： A semiconductor device and method thereof. The example method may include forming a semiconductor device, including forming a first layer on a substrate, the first layer including aluminum nitride (AlN), forming a second layer by oxidizing a surface of the first layer and forming a third layer on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes. The example semiconductor device may include a substrate including a first layer, the first layer including aluminum nitride (AlN), a second layer formed by oxidizing a surface of the first layer and a third layer formed on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes.
摘要翻译：半导体器件及其方法。示例性方法可以包括形成半导体器件，包括在衬底上形成第一层，第一层包括氮化铝（AlN），通过氧化第一层的表面并在第二层上形成第三层来形成第二层，第一层，第二层和第三层各自相对于多个晶面之一高度取向。示例性半导体器件可以包括：衬底，其包括第一层，第一层包括氮化铝（AlN），通过氧化第一层的表面形成的第二层和形成在第二层上的第三层，第一层，第二层和第二层第三层各自相对于多个晶面之一高度取向。

59. 发明申请

US20080191247A1 Nonvolatile memory transistor having poly-silicon fin, stacked nonvolatile memory device having the transistor, method of fabricating the transistor, and method of fabricating the device 失效
标题翻译：具有多晶硅鳍片的非易失性存储晶体管，具有该晶体管的堆叠式非易失性存储器件，该晶体管的制造方法以及该器件的制造方法
公开(公告)号：US20080191247A1
公开(公告)日：2008-08-14
申请号：US12007037
申请日：2008-01-04
申请人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu
发明人： Huaxiang Yin , Young-soo Park , Wenxu Xianyu
IPC分类号： H01L21/8239 , H01L27/105 , H01L29/68
CPC分类号： H01L27/0688 , H01L21/8221 , H01L27/11521 , H01L27/11551 , H01L29/7854
摘要： A nonvolatile memory transistor having a poly-silicon fin, a stacked nonvolatile memory device having the transistor, a method of fabricating the transistor, and a method of fabricating the device are provided. The device may include an active fin protruding upward from a semiconductor substrate. At least one first charge storing pattern on a top surface and sidewalls of the active fin may be formed. At least one first control gate line on a top surface of the at least one first charge storing pattern may be formed. The at least one first control gate line may intersect over the active fin. An interlayer dielectric layer may be formed on the at least one first control gate line. A poly-silicon fin may be formed on the interlayer dielectric layer. At least one second charge storing pattern on a top surface and sidewalls of the poly-silicon fin may be formed. At least one second control gate line on a top surface of the at least one second charge storing pattern may be formed, and the at least one second control gate line may intersect over the poly-silicon fin.
摘要翻译：提供了具有多晶硅鳍片的非易失性存储晶体管，具有该晶体管的堆叠非易失性存储器件，该晶体管的制造方法以及该器件的制造方法。该器件可以包括从半导体衬底向上突出的活性鳍片。可以形成顶表面上的至少一个第一电荷存储图案和有源鳍片的侧壁。可以形成至少一个第一电荷存储图案的顶表面上的至少一个第一控制栅极线。至少一个第一控制栅极线可以在有源鳍上交叉。层间绝缘层可以形成在至少一个第一控制栅极线上。多晶硅鳍可以形成在层间介电层上。可以形成多晶硅鳍片的顶表面和侧壁上的至少一个第二电荷存储图案。可以形成至少一个第二电荷存储图案的顶表面上的至少一个第二控制栅极线，并且所述至少一个第二控制栅极线可以在多晶硅鳍上相交。

60. 发明申请

US20070246802A1 Semiconductor device and methods thereof 有权
标题翻译：半导体器件及其方法
公开(公告)号：US20070246802A1
公开(公告)日：2007-10-25
申请号：US11702624
申请日：2007-02-06
申请人： Wenxu Xianyu , Young-soo Park , Jun-ho Lee , Hyuk Lim , Hans S. Cho , Huaxiang Yin
发明人： Wenxu Xianyu , Young-soo Park , Jun-ho Lee , Hyuk Lim , Hans S. Cho , Huaxiang Yin
IPC分类号： H01L23/58 , H01L21/469
CPC分类号： H01L21/02609 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/02516 , H01L21/02532
摘要： A semiconductor device and method thereof. The example method may include forming a semiconductor device, including forming a first layer on a substrate, the first layer including aluminum nitride (AlN), forming a second layer by oxidizing a surface of the first layer and forming a third layer on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes. The example semiconductor device may include a substrate including a first layer, the first layer including aluminum nitride (AlN), a second layer formed by oxidizing a surface of the first layer and a third layer formed on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes.
摘要翻译：半导体器件及其方法。示例性方法可以包括形成半导体器件，包括在衬底上形成第一层，第一层包括氮化铝（AlN），通过氧化第一层的表面并在第二层上形成第三层来形成第二层，第一层，第二层和第三层各自相对于多个晶面之一高度取向。示例性半导体器件可以包括：衬底，其包括第一层，第一层包括氮化铝（AlN），通过氧化第一层的表面形成的第二层和形成在第二层上的第三层，第一层，第二层和第二层第三层各自相对于多个晶面之一高度取向。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式