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51. 发明授权

US07659557B2 Semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07659557B2
公开(公告)日：2010-02-09
申请号：US11798873
申请日：2007-05-17
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L33/00
CPC分类号： H01L33/26 , H01L33/40
摘要： The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.
摘要翻译：本发明提供具有II-V族（或II-IV-V族）化合物接触层的半导体发光器件及其制造方法。根据本发明的优选实施例的半导体发光器件包括基板，第一导电型半导体材料层，发光层，第一电极，第二导电型半导体材料层，II-V族（或II-IV-V族）化合物接触层，透明导电层和第二电极。 II-V族（或II-IV-V族）化合物接触层的存在改善了第二导电类型半导体材料层和透明导电层之间的欧姆接触。

52. 发明申请

US20090212276A1 LIGHT-EMITTING DIODE DEVICE AND A FABRICATION METHOD THEREOF 有权
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US20090212276A1
公开(公告)日：2009-08-27
申请号：US12274239
申请日：2008-11-19
申请人： Ming-Huang HONG , Tzong-Liang Tsai
发明人： Ming-Huang HONG , Tzong-Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/14 , H01L33/387
摘要： The present invention provides a light-emitting diode (LED) device and a fabrication method thereof. The LED device has a double-layered contact layer structure with a surface of one contact layer being patterned to increase ohmic contact area of the double-layered contact layer structure to lower an operation voltage of the LED device, and hence reducing power consumption.
摘要翻译：本发明提供一种发光二极管（LED）装置及其制造方法。 LED器件具有双层接触层结构，其中一个接触层的表面被图案化以增加双层接触层结构的欧姆接触面积，从而降低LED器件的工作电压，从而降低功耗。

53. 发明申请

US20090045419A1 Semiconductor light-emitting device with high light-extraction efficiency and method for fabricating the same 有权
标题翻译：具有高光提取效率的半导体发光器件及其制造方法
公开(公告)号：US20090045419A1
公开(公告)日：2009-02-19
申请号：US12000064
申请日：2007-12-07
申请人： Tzong-Liang Tsai
发明人： Tzong-Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/02 , H01L33/22
摘要： The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic electrode structure. The substrate has a first upper surface and a plurality of recesses formed on the first upper surface. The first semiconductor material layer is formed on the first upper surface of the substrate and has a second upper surface. The multi-layer structure is formed on the second upper surface of the first semiconductor material layer and includes a light-emitting region. The ohmic electrode structure is formed on the multi-layer structure. In particular, the first semiconductor material layer has a refractive index different from those of the substrate and a bottom-most layer of the multi-layer structure.
摘要翻译：本发明公开了一种半导体发光器件及其制造方法。根据本发明的半导体发光器件包括衬底，第一半导体材料层，多层结构和欧姆电极结构。基板具有形成在第一上表面上的第一上表面和多个凹部。第一半导体材料层形成在基板的第一上表面上并具有第二上表面。多层结构形成在第一半导体材料层的第二上表面上并且包括发光区域。欧姆电极结构形成在多层结构上。特别地，第一半导体材料层的折射率与基板和多层结构的最底层的折射率不同。

54. 发明申请

US20080296588A1 Semiconductor substrate with electromagnetic-wave-scribed nicks, semiconductor light-emitting device with such semiconductor substrate and manufacture thereof 有权
标题翻译：具有电磁波刻痕的半导体衬底，具有这种半导体衬底的半导体发光器件及其制造
公开(公告)号：US20080296588A1
公开(公告)日：2008-12-04
申请号：US11976872
申请日：2007-10-29
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai
IPC分类号： H01L33/00 , H01L21/302 , H01L29/06
CPC分类号： H01L33/22 , H01L21/3043 , H01L29/30
摘要： The invention discloses a substrate and a fabricating method thereof for epitaxy of a semiconductor light-emitting device. An upper surface of the substrate according to the invention, where the epitaxy of the semiconductor light-emitting device is to be performed, has a plurality of electromagnetic-wave-scribed nicks.
摘要翻译：本发明公开了一种用于半导体发光器件外延的衬底及其制造方法。根据本发明的基板的上表面，其中将执行半导体发光器件的外延，具有多个电磁波刻划。

55. 发明申请

US20080188021A1 LIGHT EMITTING DIODE AND METHOD MAKING THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080188021A1
公开(公告)日：2008-08-07
申请号：US12031508
申请日：2008-02-14
申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
发明人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
IPC分类号： H01L21/02
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.
摘要翻译：提供一种发光二极管及其制造方法。发光二极管包括发光结构和金属反射层。发光结构包括两个半导体层和有源层。将氧化物元素添加到金属反射层中以改善反射层和发光结构之间的粘附性。此外，为了提高发光效率，可以在发光结构和反射层之间形成透明接触层。

56. 发明授权

US07355209B2 Light emitting diode and method making the same 有权
标题翻译：发光二极管及方法制作相同
公开(公告)号：US07355209B2
公开(公告)日：2008-04-08
申请号：US11316437
申请日：2005-12-22
申请人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
发明人： Tzong-Liang Tsai , Chih-Li Chiang , Chih-Sung Chang , Way-Jze Wen
IPC分类号： H01L27/15
CPC分类号： H01L33/405 , H01L33/32 , H01L33/40 , H01L33/42
摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a light emitting structure and a metal reflective layer. The light emitting structure includes two semiconductor layers and an active layer. Oxide elements are added into the metal reflective layer to improve the adhesion between the reflective layer and the light emitting structure. Additionally, a transparent contact layer can be formed between the light emitting structure and the reflective layer in order to enhance the luminance efficiency.
摘要翻译：提供一种发光二极管及其制造方法。发光二极管包括发光结构和金属反射层。发光结构包括两个半导体层和有源层。将氧化物元素添加到金属反射层中以改善反射层和发光结构之间的粘附性。此外，为了提高发光效率，可以在发光结构和反射层之间形成透明接触层。

57. 发明申请

US20080023709A1 Semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20080023709A1
公开(公告)日：2008-01-31
申请号：US11798873
申请日：2007-05-17
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/26 , H01L33/40
摘要： The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.
摘要翻译：本发明提供具有II-V族（或II-IV-V族）化合物接触层的半导体发光器件及其制造方法。根据本发明的优选实施例的半导体发光器件包括基板，第一导电型半导体材料层，发光层，第一电极，第二导电型半导体材料层，II-V族（或II-IV-V族）化合物接触层，透明导电层和第二电极。 II-V族（或II-IV-V族）化合物接触层的存在改善了第二导电类型半导体材料层和透明导电层之间的欧姆接触。

58. 发明授权

US07067340B1 Flip-chip light emitting diode and fabricating method thereof 有权
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US07067340B1
公开(公告)日：2006-06-27
申请号：US11142082
申请日：2005-05-31
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Tzer-Perng Chen
IPC分类号： H01L21/66
CPC分类号： H01L33/0079 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05169 , H01L2224/05184 , H01L2224/05568 , H01L2224/16 , H01L2924/00014 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599
摘要： A flip-chip light emitting diode and fabricating methods are disclosed. A soft transparent adhesive layer is utilized to past a transparent conductive substrate onto a light emitting diode epitaxy structure on a substrate, and the substrate is next removed entirely. Then, a mesa-etching process is performed to form a first top surface and a second top surface on the light emitting diode epitaxy structure for respectively exposing an n-type layer and a p-type layer in the light emitting diode epitaxy structure. Next, a metal reflective layer and a barrier layer are formed on the light emitting diode epitaxy structure in turn, and electrodes are finally fabricated on the barrier layer.
摘要翻译：公开了一种倒装芯片发光二极管及其制造方法。使用柔软的透明粘合剂层通过透明导电衬底到衬底上的发光二极管外延结构上，然后完全去除衬底。然后，进行台面蚀刻工艺以在发光二极管外延结构上形成第一顶表面和第二顶表面，以分别暴露发光二极管外延结构中的n型层和p型层。接下来，依次在发光二极管外延结构上形成金属反射层和阻挡层，最后在阻挡层上制造电极。

59. 发明授权

US07012281B2 Light emitting diode device and manufacturing method 失效
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US07012281B2
公开(公告)日：2006-03-14
申请号：US10695807
申请日：2003-10-30
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Chih-Li Chiang , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Chih-Li Chiang , Tzer-Perng Chen
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/387 , H01L33/42
摘要： A light emitting diode device and method of manufacturing comprises a light-transmission conductive layer and a patterned transparent conductive layer. In accordance with the present invention, the light-transmission conductive layer and the patterned transparent conductive layer is spread optimal area above the LED device so as to enhance the transparency and ohmic property of LED device.
摘要翻译：发光二极管器件及其制造方法包括透光导电层和图案化的透明导电层。根据本发明，透光导电层和图案化的透明导电层在LED器件上方扩展到最佳区域，以提高LED器件的透明度和欧姆性能。

60. 发明授权

US06504183B1 Epitaxial growth of nitride semiconductor device 有权
公开(公告)号：US06504183B1
公开(公告)日：2003-01-07
申请号：US09659015
申请日：2000-09-08
申请人： Chih-Sung Chang , Tzong-Liang Tsai
发明人： Chih-Sung Chang , Tzong-Liang Tsai
IPC分类号： H01L3300
CPC分类号： H01L33/12 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/16
摘要： The present invention provides a semiconductor device with reducing dislocation density. The semiconductor device includes multiple nucleuses between a substrate and an AlGaInN compound semiconductor. The dislocation density that is induced by crystal lattice differences between the substrate and the AlGaInN compound semiconductor is significantly reduced and the growth of the AlGaInN compound semiconductor is improved.

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