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    • 53. 发明授权
    • MISFET and complementary MISFET device having high performance source
and drain diffusion layer
    • MISFET和具有高性能源极和漏极扩散层的互补MISFET器件
    • US5962892A
    • 1999-10-05
    • US540911
    • 1995-10-11
    • Kiyoshi Takeuchi
    • Kiyoshi Takeuchi
    • H01L29/78H01L21/336H01L27/092H01L29/04H01L29/08H01L29/76H01L29/94
    • H01L29/66628H01L27/092H01L29/045H01L29/0847
    • A source and drain diffusion layer of a transistor has a junction of a shallow depth and low in parasitic resistance and parasitic capacitance.The transistor includes a gate insulator formed on a principal plane of a semiconductor substrate, a gate electrode formed on the gate insulator, and source and drain diffusion layers of one conductivity type formed on the principal plane of the semiconductor substrate across the gate electrode. A semiconductor thin film layer doped with an impurity of the same conductivity type is selectively deposited on the principal plane of the semiconductor substrate on which the source and drain diffusion layers are formed. A facet face is formed at an end portion of the semiconductor thin film which opposes to a sidewall of the gate electrode. The facet face has an inclination angle between a sidewall face of the gate electrode and the principal plane of the semiconductor substrate.
    • 晶体管的源极和漏极扩散层具有浅深度和寄生电阻和寄生电容低的结。 晶体管包括形成在半导体衬底的主平面上的栅极绝缘体,形成在栅极绝缘体上的栅极电极以及形成在半导体衬底的跨越栅电极的主平面上的一种导电类型的源极和漏极扩散层。 掺杂有相同导电类型的杂质的半导体薄膜层选择性地沉积在其上形成有源极和漏极扩散层的半导体衬底的主平面上。 在半导体薄膜的与栅电极的侧壁相对的端部形成刻面。 小平面在栅电极的侧壁面和半导体衬底的主平面之间具有倾斜角。
    • 54. 发明授权
    • FET semiconductor integrated circuit device having a planar element
structure
    • FET半导体集成电路器件具有平面元件结构
    • US5869867A
    • 1999-02-09
    • US814992
    • 1997-03-14
    • Kiyoshi Takeuchi
    • Kiyoshi Takeuchi
    • H01L23/52H01L21/3205H01L21/336H01L21/74H01L27/12H01L29/417H01L29/78H01L29/786
    • H01L29/78648H01L21/743H01L27/1203H01L29/41733
    • In a semiconductor device, an extra wiring area generated by the connection of an upper layer wiring to an element on a semiconductor substrate is reduced to improve the level of integration, and the parasitic capacitances between the gate and the source-drain regions are reduced to enhance the performance of the circuit.A gate electrode is formed via a gate insulating film on a semiconductor layer formed in the semiconductor substrate. This semiconductor layer is for forming the source region and the drain region, where the source region and the drain region are formed on the left and right of the gate electrode with the gate electrode at the center. Wirings connected to the source region are formed on the same side of the gate electrode. Wirings connected to the drain region are formed on the opposite side of the gate electrode with the semiconductor layer in between.
    • 在半导体器件中,通过将上层布线连接到半导体基板上的元件而产生的额外布线区域被减小以提高积分电平,并且栅极和源极 - 漏极区域之间的寄生电容减少到 提高电路的性能。 在半导体衬底中形成的半导体层上经由栅极绝缘膜形成栅电极。 该半导体层用于形成源极区域和漏极区域,其中源极区域和漏极区域形成在栅极电极的左侧和右侧,栅极电极位于中心。 连接到源极区的布线形成在栅电极的同一侧。 连接到漏极区的布线形成在栅电极的相对侧上,其间具有半导体层。
    • 57. 发明授权
    • Effective channel length simulation using a single sample transistor
    • 使用单个样品晶体管的有效通道长度模拟
    • US5481485A
    • 1996-01-02
    • US445578
    • 1995-05-22
    • Kiyoshi Takeuchi
    • Kiyoshi Takeuchi
    • H01L29/78G06F17/50H01L21/336G06F17/00
    • G06F17/5018G06F17/5036
    • In a device simulation apparatus, the structural parameters of a single sample field effect transistor are retrieved from a memory and a set of voltage parameters is established. A source-drain current value and a potential distribution are derived from the structural parameters. A source-drain resistance value is then derived from the source-drain current value and one of the voltage parameters and a channel resistivity value is derived from the potential distribution and the source-drain current value. One of the voltage parameters is successively updated to repeat the process on the updated parameter to produce a said plurality of source-drain current values and a plurality of channel resistivity values. The effective channel length of the transistor is determined from the source-drain resistance values and the channel resistivity values.
    • 在器件仿真装置中,从存储器检索单个采样场效应晶体管的结构参数,建立一组电压参数。 源极 - 漏极电流值和电位分布从结构参数得到。 源极 - 漏极电阻值然后从源极 - 漏极电流值导出,并且电压参数中的一个和沟道电阻率值是从电势分布和源极 - 漏极电流值导出的。 电压参数中的一个被连续更新,以重复更新参数上的处理,以产生所述多个源 - 漏电流值和多个通道电阻率值。 晶体管的有效沟道长度根据源极 - 漏极电阻值和沟道电阻率值确定。
    • 58. 发明授权
    • Silver halide color photographic material
    • 卤化银彩色照相材料
    • US5409807A
    • 1995-04-25
    • US52708
    • 1993-04-27
    • Yasuhiro YoshiokaKohzaburoh YamadaKiyoshi Takeuchi
    • Yasuhiro YoshiokaKohzaburoh YamadaKiyoshi Takeuchi
    • G03C7/36G03C7/30G03C7/388G03C7/396
    • G03C7/396G03C7/3013
    • A silver halide color photographic material excellent in color reproducibility, color forming property, color image fastness and processing dependency. The material comprises a yellow color forming silver halide emulsion layer formed on a support, said layer containing at least one yellow color forming coupler represented by general formula (I) dispersed by dissolution in a high boiling organic solvent in a weight ratio of the high boiling organic solvent to the yellow color forming coupler of 0.6 or more: ##STR1## wherein X represents an organic residue necessary for forming a nitrogen-containing heterocycle with a nitrogen atom; Y represents an aromatic group or a heterocyclic group; Z represents a group which is eliminatable by reaction of the coupler represented by general formula (I) with an oxidation product of a developing agent.
    • 色彩再现性,色彩形成性,彩色图像牢度和加工依赖性优异的卤化银彩色照相材料。 该材料包括形成在载体上的形成黄色的卤化银乳剂层,所述层含有至少一种通过溶解在高沸点有机溶剂中的通式(I)表示的黄色形成成色剂,其重量比高沸点 对于形成黄色成色剂的有机溶剂为0.6以上:(I)其中X表示与氮原子形成含氮杂环所必需的有机残基; Y表示芳基或杂环基; Z表示可以通过由通式(I)表示的成色剂与显影剂的氧化产物反应而消除的基团。
    • 59. 发明授权
    • Instrument for testing lubricating oil
    • 润滑油检测仪器
    • US4966032A
    • 1990-10-30
    • US357886
    • 1989-05-30
    • Kiyoshi Takeuchi
    • Kiyoshi Takeuchi
    • G01N19/02G01N33/30G01N33/28
    • G01N33/30G01N19/02
    • An instrument for testing the lubricating ability of a lubricating oil has a base member having a contact surface to be submerged in the oil, a vibration member having a friction portion pressed against the contact surface, a driving device having a driving element such as a driving piezoelectric element for vibrating the vibration member, a vibration pickup such as a sensing piezoelectric element for sensing a vibration produced by the friction between the friction portion and the contact surface with the interposition of the lubricating oil, an amplifier for amplifying the output of the pickup, a high-pass filter for filtering the output of the amplifier, and a voltmeter for receiving the output of the filter.
    • 用于测试润滑油的润滑能力的仪器具有一个具有浸入油中的接触表面的基底部件,一个具有摩擦部分压在接触表面上的振动部件,一个具有驱动元件的驱动装置,如驱动 用于使振动部件振动的压电元件,感测压电元件的振动拾取器,用于感测摩擦部分和接触表面之间的摩擦产生的振动,插入润滑油;放大器,用于放大拾取器的输出 ,用于对放大器的输出进行滤波的高通滤波器,以及用于接收滤波器的输出的电压表。