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    • 51. 发明授权
    • Thermal transfer type printing device
    • 热转印式印刷装置
    • US4983994A
    • 1991-01-08
    • US412797
    • 1989-09-26
    • Takashi MoriEiichi Sasaki
    • Takashi MoriEiichi Sasaki
    • B41J2/36
    • B41J2/36
    • A printing device suitable for printing on a record medium for use in an overhead projector (OHP) prints at a density controlled as a function of the type of an OHP (transmission type of reflection type) in which the record medium will be used, and/or as a function of the distance from the OHP to the screen. The device can use a transfer printing type print head, in which case the density control can be achieved by means of amplitude or pulse width modulation of the electrical signal energizing the print head or by means of controlling the number or short energization pulses to be applied to the print head.
    • 适用于在用于高架投影仪(OHP)的记录介质上打印的打印装置以根据将使用记录介质的OHP(透射型反射型)的类型来控制的浓度进行打印,以及 /或作为从OHP到屏幕的距离的函数。 该装置可以使用转印印刷型打印头,在这种情况下,密度控制可以通过激励打印头的电信号的幅度或脉冲宽度调制来实现,或通过控制要施加的数量或短激励脉冲 到打印头。
    • 52. 发明授权
    • Projection-exposing apparatus
    • 投影曝光装置
    • US4806987A
    • 1989-02-21
    • US135377
    • 1987-12-21
    • Takashi MoriKoichi MatsumotoTsutomu TakaiMasaichi MurakamiKyoichi Suwa
    • Takashi MoriKoichi MatsumotoTsutomu TakaiMasaichi MurakamiKyoichi Suwa
    • H01L21/30G03F7/20H01L21/027G03B27/42
    • G03F7/70475
    • A projection-exposing apparatus comprises a projecting optical system for projecting an image of a reticle having a predetermined pattern onto a wafer, and a stage for causing a relative shifting movement between a position of the wafer and a position of the reticle. A first exposure is effected for projecting and exposing the reticle image pattern from the projection optical system in a first area on the wafer and then the stage is shifted by a predetermined amount to effect second exposure for projecting and exposing the reticle image pattern in a second area positioned adjacent to the first area on the wafer thereby the reticle image being projected and exposed onto different areas on the same wafer. The stage causes the relative shifting movement between the reticle and the wafer in such a manner that the reticle image pattern obtained by the first exposure and the reticle image pattern obtained by the second exposure are overlapped with each other on the wafer by a predetermined amount.
    • 投影曝光装置包括投影光学系统,用于将具有预定图案的掩模版的图像投影到晶片上,以及用于在晶片的位置和光罩之间进行相对移动的台。 进行第一曝光以在晶片上的第一区域中投影和曝光来自投影光学系统的标线片图像图案,然后将该台移动预定量,以进行第二次曝光,以在第二曝光中投影和曝光标线图像图案 区域定位成与晶片上的第一区域相邻,从而掩模版图像被投影并暴露在同一晶片上的不同区域上。 该阶段以这样的方式引起标线片和晶片之间的相对移动运动,使得通过第一曝光获得的标线图像图案和通过第二次曝光获得的标线图像图案在晶片上彼此重叠预定量。
    • 54. 发明授权
    • Fastener stringer and slide fastener
    • 紧固件纵梁和拉链
    • US09289034B2
    • 2016-03-22
    • US13884311
    • 2010-11-10
    • Yoshimichi YamakitaTakashi MoriTadahiro Inomata
    • Yoshimichi YamakitaTakashi MoriTadahiro Inomata
    • A44B19/34A44B19/12D01D5/253B29D5/02
    • A44B19/34A44B19/12B29D5/02D01D5/253Y10T24/25Y10T24/2518
    • A continuous fastener element in a fastener stringer has a plurality of fine projections disposed on a circumferential surface of a monofilament continuously along a length direction of the monofilament and a plurality of recesses disposed between the projections. A cross-sectional shape of the projection is curved convexly, and a cross-sectional shape of the recess is curved concavely. A curvature of the convex curved surface of the projections is set to be larger than a curvature of the concave curved surface of the recess in a cross-section of the monofilament. At least the projections disposed on the upper and lower leg parts are twisted with respect to an extension direction of the upper and lower leg parts, and a plurality of the projections disposed on the upper leg part or the lower leg part in a twisted state face the same direction.
    • 紧固件纵梁中的连续紧固元件具有沿单丝长度方向连续地设置在单丝的圆周表面上的多个细小突起和设置在突起之间的多个凹部。 凸起的横截面形状是凸形弯曲的,并且凹部的横截面形状被凹入地弯曲。 突起的凸曲面的曲率设定为大于单丝的截面中的凹部的凹曲面的曲率。 至少设置在上部和下部腿部上的突起相对于上部和下部腿部的延伸方向扭转,并且多个突起以扭曲状态面设置在上腿部或小腿部上 方向相同
    • 55. 发明授权
    • Single-crystal manufacturing method and single-crystal manufacturing apparatus
    • 单晶制造方法和单晶制造装置
    • US09200380B2
    • 2015-12-01
    • US13125899
    • 2009-10-19
    • Suguru MatsumotoSusumu SonokawaToshiharu UesugiTakashi Mori
    • Suguru MatsumotoSusumu SonokawaToshiharu UesugiTakashi Mori
    • C30B15/30C30B29/06C30B35/00
    • C30B29/06C30B15/305C30B35/00Y10T117/1032Y10T117/1072
    • The present invention provides a silicon single crystal manufacturing method for manufacturing a single crystal based on a horizontal magnetic field applied CZ method for pulling the single crystal while applying a horizontal magnetic field to a silicon raw material melt accommodated in a quartz crucible by a magnetic field application device, comprising: measuring a center position of the magnetic field generated by the magnetic field application device; and deviating the measured center position of the magnetic field from a pulling member serving as a rotation axis of the single crystal in a horizontal direction within the range of 2 to 14 mm before manufacture of the single crystal and/or during manufacture of the single crystal. As a result, the silicon single crystal manufacturing method and manufacturing apparatus that enable manufacture of a single crystal while suppressing fluctuations in diameter and in oxygen concentration without a variation caused due to characteristics of the apparatus can be provided.
    • 本发明提供了一种基于水平磁场施加CZ方法制造单晶的硅单晶制造方法,用于在通过磁场对容纳在石英坩埚中的硅原料熔体施加水平磁场的同时拉动单晶 应用装置,包括:测量由所述磁场施加装置产生的磁场的中心位置; 并且在制造单晶之前和/或在单晶制造期间,将测量的中心位置偏离作为单晶的旋转轴的拉构件在水平方向上在2至14mm的范围内 。 结果,可以提供能够在抑制由于设备的特性引起的变化的同时抑制直径和氧浓度的波动的同时制造单晶的硅单晶制造方法和制造装置。