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51. 发明授权

US08624244B2 Thin film transistor including a light-transmitting semiconductor film and active matrix substrate 有权
标题翻译：薄膜晶体管包括透光半导体膜和有源矩阵基板
公开(公告)号：US08624244B2
公开(公告)日：2014-01-07
申请号：US13346193
申请日：2012-01-09
申请人： Reiko Noguchi , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
发明人： Reiko Noguchi , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/12 , H01L29/76 , H01L31/112 , H01L29/15
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733
摘要： A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.
摘要翻译：薄膜晶体管包括栅电极，半导体层以及放置在半导体层上并与半导体层电连接的源电极和漏电极。半导体层包括透光半导体膜和放置在透光半导体膜上并具有比透光半导体膜低的透光率的欧姆导电膜。形成欧姆导电膜不会从透光半导体膜突出。欧姆导电膜以分离的部分形成在源电极和漏电极之间的通道部分之间。源电极和漏电极通过欧姆导电膜连接到透光半导体膜。

52. 发明申请

US20120187393A1 THIN FILM TRANSISTOR, ACTIVE MATRIX SUBSTRATE, AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管，有源矩阵基板及其制造方法
公开(公告)号：US20120187393A1
公开(公告)日：2012-07-26
申请号：US13346193
申请日：2012-01-09
申请人： Reiko NOGUCHI , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
发明人： Reiko NOGUCHI , Kazunori Inoue , Masaru Aoki , Toshihiko Iwasaka
IPC分类号： H01L33/08
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733
摘要： A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.
摘要翻译：薄膜晶体管包括栅电极，半导体层以及放置在半导体层上并与半导体层电连接的源电极和漏电极。半导体层包括透光半导体膜和放置在透光半导体膜上并具有比透光半导体膜低的透光率的欧姆导电膜。形成欧姆导电膜不会从透光半导体膜突出。欧姆导电膜以分离的部分形成在源电极和漏电极之间的通道部分之间。源电极和漏电极通过欧姆导电膜连接到透光半导体膜。

53. 外观设计

USD661868S1 Pet chew article 有权
标题翻译：宠物咀嚼物品
公开(公告)号：USD661868S1
公开(公告)日：2012-06-19
申请号：US29394154
申请日：2011-06-14
申请人： Yasushi Takeda , Yuji Makihara , Kazunori Inoue , Yosuke Kobayashi
设计人： Yasushi Takeda , Yuji Makihara , Kazunori Inoue , Yosuke Kobayashi

54. 发明申请

US20120112194A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
标题翻译：半导体器件和显示器件
公开(公告)号：US20120112194A1
公开(公告)日：2012-05-10
申请号：US13232251
申请日：2011-09-14
申请人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
发明人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
IPC分类号： H01L33/08
CPC分类号： H01L29/458 , H01L29/42384 , H01L29/66765
摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要翻译：本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

55. 发明申请

US20110017993A1 TFT SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： TFT基板及其制造方法
公开(公告)号：US20110017993A1
公开(公告)日：2011-01-27
申请号：US12831658
申请日：2010-07-07
申请人： Kumi TSUDA , Kazunori Inoue , Masaru Aoki
发明人： Kumi TSUDA , Kazunori Inoue , Masaru Aoki
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/41733 , H01L29/42384
摘要： There is provided a TFT substrate including a gate electrode having a thick film part and a thin film part with a smaller film thickness than the thick film part, a semiconductor active film formed above the thick film part and the thin film part of the gate electrode, an ohmic contact film formed on an inside of the semiconductor active film and on the semiconductor active film corresponding to the thin film part on an outside of the thick film part, and an electrode film constituting a source electrode and a drain electrode, having a planar shape identical to or on an inside of the ohmic contact film, and formed on the ohmic contact film.
摘要翻译：提供了一种TFT基板，包括具有厚膜部分的栅电极和具有比厚膜部分更薄的膜厚度的薄膜部分，形成在厚膜部分上方的半导体活性膜和栅电极的薄膜部分形成在半导体有源膜的内侧上的半导体有源膜上的欧姆接触膜和对应于厚膜部的外侧的薄膜部的半导体活性膜，以及构成源电极和漏电极的电极膜，具有平面形状与欧姆接触膜的内部相同或在其内部，并形成在欧姆接触膜上。

56. 发明授权

US07577854B2 Information storage device having a divided area in memory area 失效
标题翻译：信息存储装置，在存储区域中具有分割区域
公开(公告)号：US07577854B2
公开(公告)日：2009-08-18
申请号：US10530477
申请日：2004-08-06
申请人： Masamoto Tanabiki , Kazunori Inoue , Hayashi Ito
发明人： Masamoto Tanabiki , Kazunori Inoue , Hayashi Ito
IPC分类号： G06F12/14
CPC分类号： G07F7/1008 , G06F12/1441 , G06Q20/341 , G06Q20/35765
摘要： An information storage apparatus capable of setting the number and sizes of partitioned areas resulting from partitioning a memory area based on a user's intention is provided. For this purpose, an information storage apparatus having a plurality of partitioned areas of different security levels in a memory area is provided with an area control section that controls addresses of partitioned areas in the memory area, an area update condition control section that controls update conditions when the number or sizes of partitioned areas are updated, an area update decision section that decides whether a partition request requesting updating of the number or sizes of partitioned areas satisfies the update conditions and an area update section that executes, when the partition request satisfies the update conditions, updating of the partitioned areas in the memory area according to the partition request. The partitioned areas in the memory area of this information storage apparatus are updated at a partition request reflecting the user's intention in accordance with the user's intention.
摘要翻译：提供一种信息存储装置，其能够基于用户的意图来设定由存储区域划分而产生的划分区域的数量和大小。为此，在存储区域中具有不同安全级别的多个划分区域的信息存储装置设置有控制存储区域中的分割区域的地址的区域控制部，控制更新条件的区域更新条件控制部当更新分割区域的数量或大小时，区域更新判定部分判定请求更新划分区域的数量或大小的分区请求是否满足更新条件，以及区域更新部分，当分区请求满足更新条件，根据分区请求更新存储区域中的分区区域。该信息存储装置的存储区域中的划分区域根据用户的意图按照反映用户意图的分区请求进行更新。

57. 发明申请

US20090195151A1 ORGANIC ELECTROLUMINESCENCE TYPE DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机电致发光显示装置及其制造方法
公开(公告)号：US20090195151A1
公开(公告)日：2009-08-06
申请号：US12358744
申请日：2009-01-23
申请人： Kensuke Nagayama , Kazunori Inoue , Nobuaki Ishiga
发明人： Kensuke Nagayama , Kazunori Inoue , Nobuaki Ishiga
IPC分类号： H01J1/62 , C23C14/06
CPC分类号： H01L51/105 , H01L27/3244 , H01L51/5218 , H01L2251/308
摘要： An organic electroluminescence type display apparatus according to an aspect of the present invention includes: a thin film transistor formed on an insulating substrate; and an organic EL device connected to the thin film transistor and including at least an anode, an electroluminescence layer, and a cathode stacked on each other in this order. The anode includes: an Al alloy film having conductivity and including at least one kind of Group 8 3d transition metals, and oxygen, the at least one kind of the Group 8 3d transition metals and the oxygen being added to aluminum; and an amorphous ITO film formed on the Al alloy film.
摘要翻译：根据本发明的一个方面的有机电致发光型显示装置包括：形成在绝缘基板上的薄膜晶体管; 以及连接到薄膜晶体管并且至少包括依次堆叠的阳极，电致发光层和阴极的有机EL器件。阳极包括：具有导电性且包括至少一种第8族3d过渡金属的Al合金膜和氧，所述至少一种第8族3d过渡金属和氧被添加到铝中; 以及在Al合金膜上形成的非晶ITO膜。

58. 发明申请

US20090122040A1 DRIVE DEVICE AND DRIVE METHOD 审中-公开
标题翻译：驱动装置和驱动方法
公开(公告)号：US20090122040A1
公开(公告)日：2009-05-14
申请号：US10585512
申请日：2005-11-08
申请人： Tsutomu Sakakibara , Kenji Miyake , Toru Matsugi , Kazunari Kaitani , Kazunori Inoue
发明人： Tsutomu Sakakibara , Kenji Miyake , Toru Matsugi , Kazunari Kaitani , Kazunori Inoue
IPC分类号： G09G5/00
CPC分类号： G09G3/3266 , G09G3/3677 , G09G2310/0218 , G09G2310/0267 , G09G2310/0289 , G09G2310/08 , G11C19/00
摘要： A first generation section (106) sequentially turns k first signals to the output state. A second generation section (107) sequentially turns m second signals to the output state. A total of (k×m) output circuits (X1 to Xkm) are divided into k groups. Each of the k groups includes m output circuits. The k first signals correspond to the k groups, and the m second signals correspond to the m output circuits belonging to each of the k groups. Each of the (k×m) output circuits outputs its corresponding second signal when the second signal is turned to the output state if the first signal corresponding to the group to which the output circuit belongs is in the output state.
摘要翻译：第一代部分（106）将k个第一信号顺序地转换到输出状态。第二代部分（107）依次将m个第二信号转换成输出状态。总共（k×m）个输出电路（X1〜Xkm）分为k组。 k组中的每一个包括m个输出电路。 k个第一信号对应于k个组，并且m个第二信号对应于属于k个组中的每一个的m个输出电路。如果与输出电路所属的组对应的第一信号处于输出状态，则当第二信号变为输出状态时，（kxm）个输出电路中的每一个输出相应的第二信号。

59. 发明申请

US20090108264A1 LAMINATED CONDUCTIVE FILM, ELECTRO-OPTICAL DISPLAY DEVICE AND PRODUCTION METHOD OF SAME 审中-公开
标题翻译：层压导电膜，电光显示装置及其制造方法
公开(公告)号：US20090108264A1
公开(公告)日：2009-04-30
申请号：US12262612
申请日：2008-10-31
申请人： Kazunori Inoue , Masami Hayashi , Nobuaki Ishiga
发明人： Kazunori Inoue , Masami Hayashi , Nobuaki Ishiga
IPC分类号： H01L21/77 , H01L27/088 , C23C16/513 , B32B15/04 , B32B9/00 , C23C14/34 , H01B13/06
CPC分类号： C23C28/00 , C23C26/00 , C23C28/04 , C23C28/321 , C23C28/345 , G02F2001/136295 , H01L27/12 , H01L27/124 , Y10T428/31678
摘要： The present invention provides a laminated conductive film, comprising a transparent conductive film and Al-based film, that is capable of realizing a high-quality film with superior electro-optical properties, without providing a buffer layer or protective layer. A laminated conductive film according to one aspect of the present invention is provided with a transparent conductive film having optical transmissivity, and a metal conductive film laminated directly on the transparent conductive film and electrically connected to the transparent conductive film. The metal conductive film is made of Al or has Al as a main component thereof and contains at least one of nitrogen atom and oxygen atom at least in the vicinity of the interface with the transparent conductive film.
摘要翻译：本发明提供一种层叠导电膜，其包括透明导电膜和Al基膜，其能够实现具有优异电光特性的高质量膜，而不提供缓冲层或保护层。根据本发明的一个方面的层压导电膜设置有透光性的透明导电膜，和直接层叠在透明导电膜上并与透明导电膜电连接的金属导电膜。金属导电膜由Al制成或以Al为主要成分，至少在与透明导电膜的界面附近含有氮原子和氧原子中的至少一个。

60. 发明申请

US20050285524A1 Gas discharge panel and manufacturing method therefor 审中-公开
标题翻译：气体放电面板及其制造方法
公开(公告)号：US20050285524A1
公开(公告)日：2005-12-29
申请号：US10983685
申请日：2004-11-09
申请人： Akira Tokai , Osamu Toyoda , Kazunori Inoue
发明人： Akira Tokai , Osamu Toyoda , Kazunori Inoue
IPC分类号： H01J9/02 , H01J9/24 , H01J11/22 , H01J11/34 , H01J17/49
CPC分类号： H01J11/26 , B82Y30/00 , H01J9/02 , H01J9/241 , H01J11/12 , H01J2211/361
摘要： The present invention provides a new technology for an electrode that can be used for a gas discharge panel, a substrate for a gas discharge panel, a gas discharge panel and a gas discharge panel display device. On the rib formation surface of a substrate for a gas discharge display panel, a self-assembled monolayer is formed, a part of the self-assembled monolayer is activated so that a substance to be a plating catalyst can adhere thereto, the substance to be the plating catalyst is caused to adhere to this activated part to form the plating catalyst, and address electrodes are formed by forming an electroless plating layer on the top of the part of the self-assembled monolayer by an electroless plating method using the plating catalyst.
摘要翻译：本发明提供了可用于气体放电面板，气体放电面板用基板，气体放电面板和气体放电面板显示装置的电极的新技术。在气体放电显示面板用基板的肋形成面上，形成自组装单层，自组装单层的一部分被活化，可以使作为电镀催化剂的物质附着于其上，使电镀催化剂附着在该活化部上形成镀催化剂，通过使用电镀催化剂的化学镀法，在自组装单层的一部分的顶部上形成无电解镀层来形成寻址电极。

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