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51. 发明授权

US06994922B2 Organic luminescence device with a fused polynuclear compound 有权
标题翻译：具有稠合多核化合物的有机发光装置
公开(公告)号：US06994922B2
公开(公告)日：2006-02-07
申请号：US10940734
申请日：2004-09-15
申请人： Koichi Suzuki , Akihiro Senoo , Hiroshi Tanabe
发明人： Koichi Suzuki , Akihiro Senoo , Hiroshi Tanabe
IPC分类号： H05B33/14
CPC分类号： H01L51/005 , C07C13/567 , C07C2603/18 , C09K11/06 , C09K2211/1003 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , C09K2211/1037 , C09K2211/1092 , H01L51/0042 , H01L51/0054 , H01L51/0055 , H01L51/0056 , H01L51/0058 , H01L51/0059 , H01L51/006 , H01L51/0067 , H01L51/0068 , H01L51/0069 , H01L51/0072 , H01L51/0081 , H01L51/0095 , H01L51/5012 , H01L2251/308 , Y10S428/917
摘要： An organic luminescence device having an anode and a cathode and at least one organic luminescence function layer disposed between the anode and the cathode. At least one organic luminescence function layer described above includes a layer of a fused polynuclear compound represented by the following formula (I): wherein R1, R2, R3 and R4 independently denote hydrogen atom, an alkyl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heterocyclic group, a substituted amino group or cyano group; and Ar1 and Ar2 independently denote a substituted or unsubstituted fused polynuclear aromatic group or a substituted or unsubstituted fused polynuclear heterocyclic group.
摘要翻译：一种具有阳极和阴极以及设置在阳极和阴极之间的至少一个有机发光功能层的有机发光器件。上述至少一个有机发光功能层包括由下式（I）表示的稠合多核化合物的层：<化学式id =“CHEM-US-00001”num =“000其中R.sub.1，R. sub.2，R 3和R 4独立地表示氢原子，烷基，取代或未取代的芳烷基，取代或未取代的芳基，取代或未取代的杂环基，取代的氨基或氰基; Ar 1和Ar 2独立地表示取代或未取代的稠合多核芳族基团或取代或未取代的稠合多核杂环基团。

52. 发明授权

US06989300B1 Method for forming semiconductor films at desired positions on a substrate 失效
标题翻译：在基板上的所需位置形成半导体膜的方法
公开(公告)号：US06989300B1
公开(公告)日：2006-01-24
申请号：US09614286
申请日：2000-07-12
申请人： Hiroshi Tanabe
发明人： Hiroshi Tanabe
IPC分类号： H01L21/84 , H01L21/20 , H01L21/36 , C30B13/00 , C30B21/04 , C30B28/08
CPC分类号： H01L21/0268 , H01L21/02532 , H01L21/02598 , H01L21/2026
摘要： A semiconductor film formation method allowing a single-crystal semiconductor film to be formed at a desired position on a substrate with reliability is disclosed. After preparing the substrate having a non-single-crystal semiconductor film formed thereon and an optical mask having a predetermined pattern, a projection area of the optical mask is relatively positioned at the desired position on the substrate. Thereafter, the desired position of the non-single-crystal semiconductor film is irradiated with laser light through the optical mask to change an irradiated portion of the non-single-crystal semiconductor film to the single-crystal semiconductor film. Then, an insulation film is formed on at least the single-crystal semiconductor film.
摘要翻译：公开了一种半导体膜形成方法，其可以可靠地在基板上的期望位置形成单晶半导体膜。在制备其上形成有非单晶半导体膜的基板和具有预定图案的光掩模之后，光掩模的投影面积相对位于基板上的期望位置。此后，通过光掩模用激光照射非单晶半导体膜的期望位置，将非单晶半导体膜的照射部分改变为单晶半导体膜。然后，在至少单晶半导体膜上形成绝缘膜。

53. 发明申请

US20050190436A1 Microscope and sample observation method 有权
标题翻译：显微镜和样品观察法
公开(公告)号：US20050190436A1
公开(公告)日：2005-09-01
申请号：US10880100
申请日：2004-06-30
申请人： Hirotoshi Terada , Ikuo Arata , Masaharu Tokiwa , Hiroshi Tanabe , Shigeru Sakamoto
发明人： Hirotoshi Terada , Ikuo Arata , Masaharu Tokiwa , Hiroshi Tanabe , Shigeru Sakamoto
IPC分类号： G02B21/00 , G02B21/33
CPC分类号： G02B21/0016 , G02B21/33 , Y10S359/90
摘要： For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index no and a thickness to of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index no and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.
摘要翻译：对于作为检查对象的半导体装置S，提供了图像获取部分1，包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜（SIL）3 装置S到物镜20和离开光轴的待机位置。然后在两个控制模式中进行观察，该两种控制模式包括SIL 3位于待机位置的第一模式，并且基于第一模式的基板的折射率no和厚度对其执行聚焦和像差校正半导体器件S和第二模式，其中SIL 3位于插入位置，并且基于衬底的折射率no和厚度t 0 0进行聚焦和像差校正，和折射率n 1 1，厚度d 1，以及SIL 3的曲率半径R 1 1。这提供了能够容易地观察对半导体器件的微细结构等的分析所需的样品的显微镜和样品观察方法。

54. 发明申请

US20050122447A1 Electro-optical display device and image projection unit 有权
标题翻译：电光显示装置和图像投影单元
公开(公告)号：US20050122447A1
公开(公告)日：2005-06-09
申请号：US11001240
申请日：2004-12-02
申请人： Kunihiro Shiota , Hiroshi Tanabe
发明人： Kunihiro Shiota , Hiroshi Tanabe
IPC分类号： G02F1/13 , G02F1/1333 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L29/786
CPC分类号： G02F1/136209 , G02F1/133345 , G02F2201/40
摘要： An LCD device includes a plurality of pixels each having a slope area configured by a plurality of layers. A shielded element shielded by a black matrix has an inner edge located at a distance X apart from the outer edge of the slope area, the distance X being expressed by the formula: x=(T1/cos β)×sin(α−β), wherein α and β are incidence angle and refracted angle, respectively, of the incident light at an interface between the layers having different refractive indexes in the slope area, and T1 is a thickness of the underlying layer forming the interface.
摘要翻译： LCD装置包括多个像素，每个像素具有由多个层构成的斜面区域。由黑矩阵屏蔽的屏蔽元件具有位于与斜面区域的外边缘相距X距离的内边缘，距离X由下式表示：x =（T1 /cosβ）xsin（α-β）其中α和β分别是在倾斜区域中具有不同折射率的层之间的界面处的入射光的入射角和折射角，T1是形成界面的下层的厚度。

55. 发明授权

US06830829B2 Fused polynuclear compound and organic luminescence device 失效
标题翻译：熔融多核化合物和有机发光装置
公开(公告)号：US06830829B2
公开(公告)日：2004-12-14
申请号：US10077800
申请日：2002-02-20
申请人： Koichi Suzuki , Akihiro Senoo , Hiroshi Tanabe
发明人： Koichi Suzuki , Akihiro Senoo , Hiroshi Tanabe
IPC分类号： H05B3314
CPC分类号： H01L51/005 , C07C13/567 , C07C2603/18 , C09K11/06 , C09K2211/1003 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , C09K2211/1037 , C09K2211/1092 , H01L51/0042 , H01L51/0054 , H01L51/0055 , H01L51/0056 , H01L51/0058 , H01L51/0059 , H01L51/006 , H01L51/0067 , H01L51/0068 , H01L51/0069 , H01L51/0072 , H01L51/0081 , H01L51/0095 , H01L51/5012 , H01L2251/308 , Y10S428/917
摘要： An organic luminescence device is constituted by a pair of an anode and a cathode, and at least one organic luminescence function layer disposed between the anode and the cathode. At least one organic luminescence function layer described above includes a layer of a fused polynuclear compound represented by the following formula (I): wherein R1, R2, R3 and R4 independently denote hydrogen atom, an alkyl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heterocyclic group, a substituted amino group or cyano group; and Ar1 and Ar2 independently denote a substituted or unsubstituted fused polynuclear aromatic group or a substituted or unsubstituted fused polynuclear heterocyclic group.
摘要翻译：有机发光器件由一对阳极和阴极以及设置在阳极和阴极之间的至少一个有机发光功能层构成。上述至少一个有机发光功能层包括由下式（I）表示的稠合多核化合物层：其中R1，R2，R3和R4独立地表示氢原子，烷基，取代或未取代的芳烷基，取代或未取代的芳基，取代或未取代的杂环基，取代的氨基或氰基; 并且Ar 1和Ar 2独立地表示取代或未取代的稠合多核芳族基团或取代或未取代的稠合多核杂环基团。

56. 发明授权

US06822263B2 Thin film transistor formed on a transparent substrate 有权
标题翻译：薄膜晶体管形成在透明基板上
公开(公告)号：US06822263B2
公开(公告)日：2004-11-23
申请号：US10457928
申请日：2003-06-09
申请人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
发明人： Yoshinobu Satou , Katsuhisa Yuda , Hiroshi Tanabe
IPC分类号： H01L2904
CPC分类号： H01L27/1296 , B23K26/04 , B23K26/066 , H01L21/02675 , H01L21/2026 , H01L23/544 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78633 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.
摘要翻译：薄膜晶体管形成在透明基板上，具有栅极电极膜层和源极和漏极区域，并且还具有由与栅极中至少一个的构成材料相同的构成材料制成的对准标记电极膜层和源极和漏极区，并且形成在与栅极电极膜层或源极和漏极区域相同的位置处。

57. 发明授权

US06706120B2 Method of fixing flavorant which improves sidestream smoke smell of tobacco and cigarette 有权
标题翻译：固定香味剂的方法，改善烟草和香烟的侧流烟味
公开(公告)号：US06706120B2
公开(公告)日：2004-03-16
申请号：US10073420
申请日：2002-02-13
申请人： Masato Miyauchi , Hideki Nagae , Hiroshi Tanabe , Hiroaki Nakano
发明人： Masato Miyauchi , Hideki Nagae , Hiroshi Tanabe , Hiroaki Nakano
IPC分类号： A24B1530
CPC分类号： A24B15/282 , A24D1/02
摘要： A method of fixing a flavorant for improving the small of a sidestream smoke of tobacco. This method includes applying, to tobacco wrapper paper, a tobacco sidestream smoke smell-improving agent including an ethanol or propylene glycol solution of the flavorant added to an emulsion of an ethylene-vinyl acetate copolymer having an ethylene content of 30% by weight or less, the emulsion having a solid content of 10 to 60% by weight, and drying it to fix the flavorant to the wrapper paper. The ethanol solution of the flavorant is added to the emulsion such that an amount of ethanol is 40% by weight or less with respect to 100% by weight of the emulsion, while the propylene glycol of the flavorant is added to the emulsion such that an amount of propylene glycol is 11% by weight or less with respect to 100% by weight of the emulsion.
摘要翻译：一种固定用于改善烟草侧流烟雾的香料的方法。该方法包括向烟草包皮纸施加烟草侧流烟气味改善剂，其包括添加到乙烯含量为30重量％以下的乙烯 - 乙酸乙烯酯共聚物的乳液中的调味剂的乙醇或丙二醇溶液，该乳液的固含量为10至60重量％，并将其干燥以将香料固定在包装纸上。将调味剂的乙醇溶液加入到乳液中，使得相对于100重量％的乳液，乙醇的量为40重量％以下，同时向该乳液中加入调味剂的丙二醇使得相对于100重量％的乳液，丙二醇的量为11重量％以下。

58. 发明授权

US06642091B1 Thin-film semiconductor device and apparatus for fabricating thin-film semiconductor device 有权
标题翻译：薄膜半导体器件及薄膜半导体器件的制造装置
公开(公告)号：US06642091B1
公开(公告)日：2003-11-04
申请号：US09615058
申请日：2000-07-12
申请人： Hiroshi Tanabe
发明人： Hiroshi Tanabe
IPC分类号： H01L2100
CPC分类号： H01L21/02675 , C23C16/56 , H01L21/02532 , H01L21/2026 , H01L21/67069 , H01L21/67253 , H01L29/66757 , Y10S438/905
摘要： There is provided a method of fabricating a thin-film semiconductor device, including the steps of (a) melting and recrystallizing at least a surface of a thin semiconductor film formed on a substrate, in a pressure lower than an atmospheric pressure or in inert gas atmosphere, (b) keeping the substrate in atmosphere including oxygen gas, and (c) forming an insulating film on the thin semiconductor film with the substrate being kept in a pressure lower than an atmospheric pressure or inert gas atmosphere.
摘要翻译：提供一种制造薄膜半导体器件的方法，其包括以下步骤：（a）在低于大气压或低于大气压的压力下或在惰性气体中至少在至少形成在衬底上的薄的半导体膜的表面上熔化和重结晶气氛，（b）将基板保持在包括氧气的气氛中，（c）在薄的半导体膜上形成绝缘膜，其中基板保持在低于大气压或惰性气体气氛的压力。

59. 发明授权

US06557561B1 Cigarette paper having a flavorant which improves sidestream smoke smell, and a cigarette 有权
标题翻译：具有改善侧流烟雾气味的香料的香烟纸和香烟
公开(公告)号：US06557561B1
公开(公告)日：2003-05-06
申请号：US09666409
申请日：2000-09-20
申请人： Masato Miyauchi , Toru Sakurai , Hideki Nagae , Hiroshi Tanabe , Hiroaki Nakano
发明人： Masato Miyauchi , Toru Sakurai , Hideki Nagae , Hiroshi Tanabe , Hiroaki Nakano
IPC分类号： A24D102
CPC分类号： A24B15/282 , A24D1/02
摘要： A cigarette paper having a sidestream smoke smell-improving agent including a lactone in its free state, or a salt of a hydroxy acid corresponding to the lactone, as well as a cigarette wrapped by the cigarette paper. The salt of the hydroxy acid can be an alkali metal salt or an alkaline earth metal salt. The lactone can be a lactone having five or more ring members. The lactone can be a &ggr;-lactone or a &dgr;-lactone.
摘要翻译：一种卷烟纸，其具有包含游离状态的内酯的侧流烟气味改善剂或对应于该内酯的羟基酸盐，以及由该卷烟纸包裹的香烟。羟基酸的盐可以是碱金属盐或碱土金属盐。内酯可以是具有五个以上环成员的内酯。内酯可以是γ-内酯或δ-内酯。

60. 发明授权

US06512246B1 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US06512246B1
公开(公告)日：2003-01-28
申请号：US09656631
申请日：2000-09-07
申请人： Hiroshi Tanabe
发明人： Hiroshi Tanabe
IPC分类号： H01L2904
CPC分类号： H01L29/66757 , G02F1/13454 , H01L27/1281 , H01L29/78603 , H01L29/78675
摘要： In a thin film transistor provided with a metallic layer with a light-shading property and a Si layer formed on an insulating layer, a dent for locally thinning the insulating layer is formed on a portion corresponding to a drain region. When the Si layer is recrystallized by means of a laser light irradiation, the dent serves as a crystalline nucleus formation region in order to recrystallize a particular portion earlier than other portions. Recrystallization of melted Si starts from a periphery of a bottom surface of the dent, hence a Si layer formed of a single crystal or uniformed crystal grains which serves as an active region of the TFT can be obtained.
摘要翻译：在设置有具有遮光性的金属层和形成在绝缘层上的Si层的薄膜晶体管中，在对应于漏极区域的部分上形成用于局部变薄绝缘层的凹坑。当Si层通过激光照射而重结晶时，该凹痕用作结晶核形成区域，以使得比其它部分更早地重结晶特定部分。熔融Si的再结晶从凹部的底面的周围开始，因此可以获得由作为TFT的有源区域的单晶或均匀晶粒形成的Si层。

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