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    • 51. 发明申请
    • Shower plate for plasma processing apparatus and plasma processing apparatus
    • 等离子体处理装置和等离子体处理装置的淋浴板
    • US20050258280A1
    • 2005-11-24
    • US11118373
    • 2005-05-02
    • Keiichi GotoMakoto KawaiKenji Satoh
    • Keiichi GotoMakoto KawaiKenji Satoh
    • H05H1/46B05B1/18B05B3/04C23C8/36H01J37/32H01L21/3065
    • H01J37/3244B05B1/185C23C8/36H01L21/3065
    • There is disclosed a shower plate 1, wherein the shower plate has a plurality of holes 3 for inserting the head of the fastening member and holes 4 for fitting the head are formed integrally along a concentric circle in the outside region of the gas feeding holes 2 on a side facing the supporting member, each hole for fitting extending in one direction of the concentric circle from each hole for insertion, each hole for fitting has a groove portion 4b through which the shank of the fastening member is to pass and a fitting portion 4a which is wider than the groove portion and in which the head of the fastening member is to be fitted, and the head of the fastening member fixed in the supporting member is inserted into the hole for insertion of the shower plate and the shower plate is turned so that the head of the fastening member is fitted in the fitting portion, and thereby the shower plate is supported by the supporting member without exposure of the fastening member. There can be provided a shower plate for a plasma processing apparatus, wherein effective diameter is large enough, contamination of a substrate to be treated can be prevented, it is easy to manufacture, and it is easy to fix to a supporting member.
    • 公开了一种喷淋板1,其中喷淋板具有用于插入紧固部件的头部的多个孔3,用于安装头部的孔4沿气体供给孔2的外部区域中的同心圆一体地形成 在面对支撑构件的一侧,每个孔用于从每个孔插入同心圆的一个方向延伸,每个用于装配的孔具有凹槽部分4b,紧固构件的柄将穿过该槽部分4b和配件 部分4a,其宽于凹槽部分,并且紧固构件的头部将被装配在其中,并且固定在支撑构件中的紧固构件的头部插入到用于插入淋浴板和淋浴器的孔中 板的转动使得紧固件的头部装配在装配部分中,从而淋浴板由支撑件支撑而不暴露紧固件。 可以提供一种用于等离子体处理装置的喷淋板,其中有效直径足够大,可以防止待处理基板的污染,易于制造,并且易于固定到支撑构件。
    • 52. 发明授权
    • Semiconductor device having protective films surrounding a fuse and method of manufacturing thereof
    • 具有围绕保险丝的保护膜的半导体器件及其制造方法
    • US06300232B1
    • 2001-10-09
    • US09548149
    • 2000-04-13
    • Kenji Satoh
    • Kenji Satoh
    • H01L2144
    • H01L23/5258H01L2924/0002H01L2924/00
    • The present invention discloses a semiconductor device and its manufacture by which damages, such as cracks, generated by the heat of melting of a fuse that is employed for isolating a circuit from the other circuits, can be blocked from propagating into other parts of the semiconductor device. A lower protective film formed on an oxide film provided on a substrate, has a width larger than that of the fuse, and blocks the propagation of damages generated at melting of the fuse. A first insulating film formed on the oxide film so as to cover the lower protective film, has two grooves reaching the lower protective film that is formed so as to surround the fuse. The fuse is formed in the region between the two grooves formed in the first insulating film. A second insulating film is formed on the first insulating film so as to cover the fuse, and has grooves connected to the grooves formed in the first insulating film. A side-face protective film is formed within the grooves formed in the first and second insulating films and blocks the propagation of damages generated at melting of the fuse.
    • 本发明公开了一种半导体器件及其制造方法,其可以阻止由用于将电路与其它电路隔离的熔断器的熔化热产生的诸如裂纹的损伤传播到半导体的其它部分 设备。 在设置在基板上的氧化膜上形成的下保护膜的宽度大于保险丝的宽度,并且阻止熔丝熔化时产生的损伤的传播。 形成在氧化膜上以覆盖下保护膜的第一绝缘膜具有到达保护膜周围形成的下保护膜的两个槽。 熔丝形成在形成在第一绝缘膜中的两个沟槽之间的区域中。 在第一绝缘膜上形成第二绝缘膜以覆盖保险丝,并且具有连接到形成在第一绝缘膜中的槽的沟槽。 在形成在第一绝缘膜和第二绝缘膜中的沟槽内形成侧面保护膜,并且阻止熔丝熔化时产生的损伤的传播。