专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20160379889A1 Method Of Making A Finfet Device 审中-公开
标题翻译：制作Finfet设备的方法
公开(公告)号：US20160379889A1
公开(公告)日：2016-12-29
申请号：US15257469
申请日：2016-09-06
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ming-Feng Shieh , Weng-Hung Tseng , Tzung-Hua Lin , Hung-Chang Hsieh
IPC分类号： H01L21/8234 , H01L21/311 , H01L21/308 , H01L21/762
CPC分类号： H01L21/823431 , H01L21/3081 , H01L21/31111 , H01L21/76224 , H01L21/823468 , H01L21/823481 , H01L27/0886
摘要： A method of fabricating a fin-like field-effect transistor device is disclosed. The method includes forming mandrel features over a substrate and performing a first cut to remove mandrel features to form a first space. The method also includes performing a second cut to remove a portion of mandrel features to form a line-end and an end-to-end space. After the first and the second cuts, the substrate is etched using the mandrel features, with the first space and the end-to-end space as an etch mask, to form fins. Depositing a space layer to fully fill in a space between adjacent fins and cover sidewalls of the fins adjacent to the first space and the end-to-end space. The spacer layer is etched to form sidewall spacers on the fins adjacent to the first space and the end-to-end space and an isolation trench is formed in the first space and the end-to-end space.
摘要翻译：公开了制造鳍状场效应晶体管器件的方法。该方法包括在基底上形成心轴特征并执行第一切割以去除心轴特征以形成第一空间。该方法还包括执行第二切割以去除心轴特征的一部分以形成线端和端对端空间。在第一次和第二次切割之后，使用芯棒特征蚀刻衬底，其中第一空间和端对端空间作为蚀刻掩模，以形成翅片。沉积空间层以完全填充相邻散热片之间的空间并且覆盖与第一空间和端对端空间相邻的翅片的侧壁。间隔层被蚀刻以在靠近第一空间和端对端空间的翅片上形成侧壁间隔物，并且在第一空间和端对端空间中形成隔离沟槽。

52. 发明申请

US20160216613A1 SYSTEM AND METHOD FOR LITHOGRAPHY ALIGNMENT 有权
标题翻译：系统和方法的LITHOGRAPHY对齐
公开(公告)号：US20160216613A1
公开(公告)日：2016-07-28
申请号：US15090108
申请日：2016-04-04
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Yu-Hsien Lin , Hung-Chang Hsieh , Feng-Jia Shiu , Chun-Yi Lee
IPC分类号： G03F7/20
CPC分类号： G03F7/70141 , G03F9/7084
摘要： A method provides an integrated circuit (IC) substrate having first and second alignment marks defined in a first pattern layer, and third and fourth alignment marks defined in a second pattern layer. The first and second alignment marks are illuminated, through a photomask, with a first light to determine a first layer alignment error including a first alignment error and a second alignment error. The first alignment error has more weight than the second alignment error in determining the first layer alignment error. The third and fourth alignment marks are illuminated with a second light to determine a second layer alignment error including a third alignment error in relation to the third alignment mark and a fourth alignment error in relation to the fourth alignment mark. The third alignment error has more weight than the fourth alignment error in determining the second layer alignment error.
摘要翻译：一种方法提供了具有限定在第一图案层中的第一和第二对准标记的集成电路（IC）基板，以及限定在第二图案层中的第三和第四对准标记。第一和第二对准标记通过光掩模用第一光照亮，以确定包括第一对准误差和第二对准误差的第一层对准误差。在确定第一层对准误差时，第一对准误差比第二对准误差具有更多的权重。用第二光照射第三和第四对准标记，以确定包括相对于第三对准标记的第三对准误差和与第四对准标记相关的第四对准误差的第二层对准误差。在确定第二层对准误差时，第三对准误差比第四对准误差具有更多的权重。

53. 发明授权

US09304403B2 System and method for lithography alignment 有权
标题翻译：光刻对准的系统和方法
公开(公告)号：US09304403B2
公开(公告)日：2016-04-05
申请号：US13732913
申请日：2013-01-02
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Yu-Hsien Lin , Hung-Chang Hsieh , Feng-Jia Shiu , Chun-Yi Lee
IPC分类号： G03B27/42 , G03B27/54 , G03B27/32 , G03F7/20 , G03F9/00 , G03B27/58
CPC分类号： G03F7/70141 , G03F9/7084
摘要： The present disclosure provides one embodiment of a lithography system for integrated circuit making. The system includes a substrate stage designed to secure a substrate and being operable to move the substrate; an alignment module that includes a tunable light source being operable to generate an infrared light with a wavelength tunable; and a detector to receive the light; and an exposing module integrated with the alignment module and designed to performing an exposing process to a resist layer coated on the substrate.
摘要翻译：本公开提供了用于集成电路制造的光刻系统的一个实施例。该系统包括设计成固定基板并可操作以移动基板的基板台; 对准模块，其包括可调谐光源，其可操作以产生具有波长可调谐的红外光; 和接收光的检测器; 以及与所述对准模块集成并被设计为对涂覆在所述基板上的抗蚀剂层进行曝光处理的曝光模块。

54. 发明申请

US20150128098A1 Method and System for Repairing Wafer Defects 有权
标题翻译：修复晶圆缺陷的方法和系统
公开(公告)号：US20150128098A1
公开(公告)日：2015-05-07
申请号：US14071352
申请日：2013-11-04
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Shih-Ming Chang , Chih-Ming Lai , Hung-Chang Hsieh
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/72 , G03F7/7065 , G06F2217/06 , G06F2217/12
摘要： A method of lithographic defect detection and repair is disclosed. In an exemplary embodiment, the method of patterning a workpiece comprises receiving a mask for patterning a workpiece. The mask is inspected for defects, and a mask defect is identified that is repairable in the workpiece. The workpiece is lithographically exposed using the mask, and a defect is repaired within the workpiece based on the identified mask defect. The method may further comprise comparing defects across the workpiece to determine repeating defects and determining a spacing between repeating defects. A distance between a first focal point and a second focal point of a lithographic system may be configured to correspond to the spacing between repeating defects. Thus, a first repeating defect and a second repeating defect may be repaired concurrently.
摘要翻译：公开了一种光刻缺陷检测和修复方法。在示例性实施例中，图案化工件的方法包括接收用于图案化工件的掩模。对掩模进行缺陷检查，并识别出可在工件中修复的掩模缺陷。使用掩模将工件光刻曝光，并且基于所识别的掩模缺陷在工件内修复缺陷。该方法还可以包括比较穿过工件的缺陷以确定重复缺陷并确定重复缺陷之间的间隔。光刻系统的第一焦点和第二焦点之间的距离可以被配置为对应于重复缺陷之间的间隔。因此，可以同时修复第一重复缺陷和第二重复缺陷。

55. 发明申请

US20150111362A1 Method Of Making A FinFET Device 有权
标题翻译：制造FinFET器件的方法
公开(公告)号：US20150111362A1
公开(公告)日：2015-04-23
申请号：US14057789
申请日：2013-10-18
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ming-Feng Shieh , Weng-Hung Tseng , Tzung-Hua Lin , Hung-Chang Hsieh
IPC分类号： H01L21/8234 , H01L27/088
CPC分类号： H01L21/823431 , H01L21/3081 , H01L21/31111 , H01L21/76224 , H01L21/823468 , H01L21/823481 , H01L27/0886
摘要： A method of fabricating a fin-like field-effect transistor device is disclosed. The method includes forming mandrel features over a substrate and performing a first cut to remove mandrel features to form a first space. The method also includes performing a second cut to remove a portion of mandrel features to form a line-end and an end-to-end space. After the first and the second cuts, the substrate is etched using the mandrel features, with the first space and the end-to-end space as an etch mask, to form fins. Depositing a space layer to fully fill in a space between adjacent fins and cover sidewalls of the fins adjacent to the first space and the end-to-end space. The spacer layer is etched to form sidewall spacers on the fins adjacent to the first space and the end-to-end space and an isolation trench is formed in the first space and the end-to-end space.
摘要翻译：公开了制造鳍状场效应晶体管器件的方法。该方法包括在基底上形成心轴特征并执行第一切割以去除心轴特征以形成第一空间。该方法还包括执行第二切割以去除心轴特征的一部分以形成线端和端对端空间。在第一次和第二次切割之后，使用芯棒特征蚀刻衬底，其中第一空间和端对端空间作为蚀刻掩模，以形成翅片。沉积空间层以完全填充相邻散热片之间的空间并且覆盖与第一空间和端对端空间相邻的翅片的侧壁。间隔层被蚀刻以在靠近第一空间和端对端空间的翅片上形成侧壁间隔物，并且在第一空间和端对端空间中形成隔离沟槽。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式