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51. 发明申请

US20100244163A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20100244163A1
公开(公告)日：2010-09-30
申请号：US12716582
申请日：2010-03-03
申请人： Tadaomi Daibou , Toshihiko Nagase , Eiji Kitagawa , Masatoshi Yoshikawa , Katsuya Nishiyama , Makoto Nagamine , Tatsuya Kishi , Hiroaki Yoda
发明人： Tadaomi Daibou , Toshihiko Nagase , Eiji Kitagawa , Masatoshi Yoshikawa , Katsuya Nishiyama , Makoto Nagamine , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L43/08 , H01L27/115
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.
摘要翻译：磁阻元件包括稳定层，非磁性层，设置在稳定层和非磁性层之间的自旋极化层，垂直方向上具有磁各向异性的自旋极化层和设置在该磁性层的一侧的磁性层非磁性层与设置有自旋极化层的一侧相反。稳定层的面内方向的晶格常数小于自旋极化层的晶格常数。自旋极化层含有选自钴（Co）和铁（Fe）中的至少一种元素，具有体心四方晶（BCT）结构，晶格常数比c / a为1.10（含）为1.35（含），当垂直方向为c轴且面内方向为a轴时。

52. 发明申请

US20090251951A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 审中-公开
标题翻译：磁性元件和磁性随机存取存储器
公开(公告)号：US20090251951A1
公开(公告)日：2009-10-08
申请号：US12409654
申请日：2009-03-24
申请人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Tatsuya Kishi , Hiroaki Yoda
发明人： Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/00 , H01L29/82 , G11C11/416 , G11C11/14
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , G11C11/1675 , H01F10/123 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01F41/307 , H01L43/08
摘要： A magnetoresistive element includes a foundation layer, a first magnetic layer on the foundation layer, a tunnel barrier layer on the first magnetic layer, and a second magnetic layer on the tunnel barrier layer. The first magnetic layer is made of a ferromagnetic metal containing one or more elements selected from a first group consisting of Co, Fe, and Ni, and one or more elements selected from a second group consisting of Cu, Ag, Au, Pd, Pt, Ru, Rh, Ir, and Os. The foundation layer is made of a metal containing one or more elements selected from a third group consisting of Al, Ni, Co, Fe, Mn, Cr, and V.
摘要翻译：磁阻元件包括基础层，基础层上的第一磁性层，第一磁性层上的隧道势垒层，以及隧道势垒层上的第二磁性层。第一磁性层由含有选自Co，Fe和Ni的第一组中的一种或多种元素的铁磁性金属和选自由Cu，Ag，Au，Pd，Pt组成的第二组中的一种或多种元素，Ru，Rh，Ir和Os。基底层由含有选自由Al，Ni，Co，Fe，Mn，Cr和V组成的第三组中的一种或多种元素的金属制成。

53. 发明申请

US20090243008A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20090243008A1
公开(公告)日：2009-10-01
申请号：US12409716
申请日：2009-03-24
申请人： Eiji Kitagawa , Masatoshi Yoshikawa , Toshihiko Nagase , Tadaomi Daibou , Makoto Nagamine , Katsuya Nishiyama , Tatsuya Kishi , Hiroaki Yoda
发明人： Eiji Kitagawa , Masatoshi Yoshikawa , Toshihiko Nagase , Tadaomi Daibou , Makoto Nagamine , Katsuya Nishiyama , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222
摘要： A magnetoresistive element includes an underlying layer having a cubic or tetragonal crystal structure oriented in a (001) plane, a first magnetic layer provided on the underlying layer, having perpendicular magnetic anisotropy, and having an fct structure oriented in a (001) plane, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer, and having perpendicular magnetic anisotropy. An in-plane lattice constant a1 of the underlying layer and an in-plane lattice constant a2 of the first magnetic layer satisfy the following equation in which b is a magnitude of Burgers vector of the first magnetic layer, ν is an elastic modulus of the first magnetic layer, and hc is a thickness of the first magnetic layer. |√{square root over (2)}a1/2−a2|/a2
摘要翻译：磁阻元件包括具有在（001）面取向的立方或四方晶体结构的下层，设置在下层上的第一磁性层，具有垂直的磁各向异性，并且具有在（001）面中取向的fct结构，设置在第一磁性层上的非磁性层以及设置在非磁性层上的具有垂直磁各向异性的第二磁性层。下层的面内晶格常数a1和第一磁性层的面内晶格常数a2满足以下等式，其中b是第一磁性层的汉堡矢量的大小，nu是第一磁性层的弹性模量第一磁性层，hc是第一磁性层的厚度。 <？in-line-formula description =“In-line Formulas”end =“lead”？> |√{square root over（2）} a1 / 2-a2 | / a2

54. 发明授权

US06307708B1 Exchange coupling film having a plurality of local magnetic regions, magnetic sensor having the exchange coupling film, and magnetic head having the same 失效
标题翻译：具有多个局部磁性区域的交换耦合膜，具有交换耦合膜的磁性传感器和具有该交换耦合膜的磁头
公开(公告)号：US06307708B1
公开(公告)日：2001-10-23
申请号：US09268322
申请日：1999-03-16
申请人： Hiroaki Yoda , Masatoshi Yoshikawa , Yuichi Ohsawa , Tomomi Funayama
发明人： Hiroaki Yoda , Masatoshi Yoshikawa , Yuichi Ohsawa , Tomomi Funayama
IPC分类号： G11B5147
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/127 , G11B5/3113 , G11B5/3156 , G11B5/3903 , G11B5/3925 , G11B5/3967 , G11B5/66 , H01F10/3218
摘要： An exchange coupling film, magnetic sensor having the exchange coupling film, and a magnetic head having the same. The exchange coupling film includes a ferromagnetic layer and an antiferromagnetic layer where a total a magnetic anisotropy is controlled to be dispersed by annealing or depositing the film in rotating magnetic fields. Small local magnetic regions of different uniaxial anisotropy are introduced in the exchange coupling film. The magnetic anisotropy dispersion of the exchange coupling film results in prohibiting large domain wall transfer of an irreversible change in magnetization direction and suppressing BHN.
摘要翻译：具有交换耦合膜的交换耦合膜，磁传感器和具有该交换耦合膜的磁头。交换耦合膜包括铁磁层和反铁磁层，其中通过在旋转磁场中退火或沉积膜来控制总磁各向异性以分散。在交换耦合膜中引入具有不同单轴各向异性的小局部磁性区域。交换耦合膜的磁各向异性分散导致阻止磁畴方向上不可逆变化的大的畴壁转移并抑制BHN。

55. 发明授权

US06256863B1 Yoke type magnetoresistance head and manufacturing method of the same 失效
标题翻译：轭型磁阻头及其制造方法
公开(公告)号：US06256863B1
公开(公告)日：2001-07-10
申请号：US08815179
申请日：1997-03-11
申请人： Kazuhiro Saito , Akiko Saito , Hitoshi Iwasaki , Akihiko Tsutai , Hiroaki Yoda , Tadahiko Kobayashi , Yuichi Ohsawa , Masahi Sahashi , Yuzo Kamiguchi
发明人： Kazuhiro Saito , Akiko Saito , Hitoshi Iwasaki , Akihiko Tsutai , Hiroaki Yoda , Tadahiko Kobayashi , Yuichi Ohsawa , Masahi Sahashi , Yuzo Kamiguchi
IPC分类号： G11B542
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3113 , G11B5/3163 , G11B5/3903 , G11B5/3916 , G11B2005/3996 , Y10T29/49034
摘要： A magnetic yoke having a magnetic gap provided in the side of the surface facing the medium is disposed on the surface of a substrate. An MR film is disposed on the surface of the magnetic yoke substantially parallel to the substrate with a predetermined separation from the surface S facing the medium. At least both end portions of the MR film are magnetically coupled to the magnetic yoke. A pair of leads for supplying sensing current to the MR film have magnetic lead portions formed from the same magnetic layers as the magnetic yoke. The magnetic lead portions curb deterioration of MR head properties and yield reduction during formation of the leads. Furthermore, a bias magnetic field is applied to the magnetic yoke and the MR film at least during operation of the head. This bias magnetic field is for instance provided by a magnetic field induced by the electric current. Alternatively, a magnetic field induced by the electric current is applied while heat-processing the magnetic yoke. Magnetic anisotropy is induced to the magnetic yoke in a direction differing according to the position. This magnetic anisotropy curbs Barkhausen noise caused by the magnetic yoke.
摘要翻译：在基板的表面上设置具有设置在面向介质的表面侧的磁隙的磁轭。以与面向介质的表面S预定间隔的方式将磁性薄膜基本上平行于基板平行设置在磁轭的表面上。 MR膜的至少两个端部磁耦合到磁轭。用于向MR膜提供感测电流的一对引线具有由与磁轭相同的磁性层形成的磁性引线部分。磁性引线部分在引线形成期间抑制MR磁头特性的劣化和屈服减少。此外，至少在头部的操作期间，向磁轭和MR膜施加偏置磁场。该偏置磁场例如由电流引起的磁场提供。或者，在对磁轭进行加热处理的同时施加由电流引起的磁场。磁性各向异性在根据位置不同的方向上被引到磁轭上。这种磁各向异性限制了由磁轭引起的Barkhausen噪声。

56. 发明授权

US6038101A Magnetic head and method of manufacturing magnetic head 失效
标题翻译：磁头及制造磁头的方法
公开(公告)号：US6038101A
公开(公告)日：2000-03-14
申请号：US041624
申请日：1998-03-13
申请人： Hiroaki Yoda , Yuichi Ohsawa , Takeo Sakakubo , Masashi Sahashi , Jun Ito , Kazushi Tanimoto
发明人： Hiroaki Yoda , Yuichi Ohsawa , Takeo Sakakubo , Masashi Sahashi , Jun Ito , Kazushi Tanimoto
IPC分类号： G11B5/60 , G11B5/255 , G11B5/31 , G11B5/39 , G11B5/40 , G11B21/21
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3106 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , G11B5/255 , G11B5/3133 , G11B5/40
摘要： A magnetic head has a recording/reproducing element which is embedded in an insulation layer made of an AlO.sub.x thin film and a leading end of which is positioned at a medium opposed face. A high-hardness coating layer or a high-thermal conductivity coating layer made of diamond-like carbon or the like is disposed on a peripheral region of the medium opposed face, excluding the leading end of the recording/reproducing element and a region in the neighborhood thereof. Even in the case where the magnetic head is applied to a magnetic disk apparatus of contact recording/reproducing system, it is possible to greatly restrain wear of the leading end of the recording/reproducing element and the region in the neighborhood thereof. Further, the heat dissipation characteristic of the leading end of the recording/reproducing element can be improved greatly. The dishing of the leading end of the recording/reproducing element can be reduced to a great extent by so etching the peripheral region of the medium opposed face that the leading end of the recording/reproducing element is projected; forming the high-hardness coating layer on an etched region; and processing the projected region by wear in a final process.
摘要翻译：磁头具有嵌入在由AlOx薄膜制成的绝缘层中并且其前端位于介质相对面的记录/再现元件。除了记录/再现元件的前端之外，在介质相对面的外围区域上还设置有由类金刚石碳等制成的高硬度涂层或高导热性涂层，邻里。即使在将磁头施加到接触记录/再现系统的磁盘装置的情况下，也可以大大地抑制记录/再现元件的前端和其附近的区域的磨损。此外，可以大大提高记录/再现元件的前端的散热特性。通过蚀刻记录/再现元件的前端的介质相对面的周边区域可以很大程度地减小记录/再现元件的前端的凹陷; 在蚀刻区域上形成高硬度涂层; 并在最终过程中通过磨损来处理投影区域。

57. 发明授权

US5912790A Thin film magnetic recording-reproducing head having a high recording density and high fidelity 失效
标题翻译：具有高记录密度和高保真度的薄膜磁记录再现头
公开(公告)号：US5912790A
公开(公告)日：1999-06-15
申请号：US818110
申请日：1997-03-13
申请人： Hiroaki Yoda , Akio Hori , Michiko Hara , Naoyuki Inoue , Yuichi Ohsawa , Susumu Hashimoto , Takeo Sakakubo , Norio Ozawa , Teruo Sasho
发明人： Hiroaki Yoda , Akio Hori , Michiko Hara , Naoyuki Inoue , Yuichi Ohsawa , Susumu Hashimoto , Takeo Sakakubo , Norio Ozawa , Teruo Sasho
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127 , G11B5/187
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3103 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3967 , G11B2005/3996
摘要： A composite magnetic head includes a recording head and a reproducing head. The recording head may be formed below or above the reproducing head. The lower of the recording and reproducing heads includes a first electrode. In addition, a conductive layer acting as a pole structure for the recording head includes a portion defining a hole through which a second electrode is made to contact the first electrode.
摘要翻译：复合磁头包括记录头和再现头。记录头可以形成在再现头的下方或上方。记录和再现头的下部包括第一电极。此外，作为记录头的极结构的导电层包括限定使第二电极与第一电极接触的孔的部分。

58. 发明授权

US5896251A Magnetoresistance effect head with conductor film pair and magnetic field proving film pair disposed between substrate and magnetoresistance effect film 失效
标题翻译：具有导体膜对的磁阻效应头和设置在衬底和磁阻效应膜之间的磁场证明膜对
公开(公告)号：US5896251A
公开(公告)日：1999-04-20
申请号：US577075
申请日：1995-12-22
申请人： Yuichi Ohsawa , Hiroaki Yoda , Reiko Kondoh
发明人： Yuichi Ohsawa , Hiroaki Yoda , Reiko Kondoh
IPC分类号： G11B5/31 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3932
摘要： A magnetoresistance effect head comprises a magnetoresistance effect element portion including a magnetoresistance effect film having a magnetic field response portion, a magnetic field providing film for providing the magnetoresistance effect film with a bias magnetic field, and a conductor film for supplying a current to the magnetoresistance effect film, wherein the magnetoresistance effect element portion has a laminate structure portion being composed of at least the conductor film, the magnetic field providing film, and the magnetoresistance effect film layered in this order at other than the magnetic field response portion. The magnetoresistance effect head is obtained by patterning a laminate film composed of a conductor film and a magnetic field providing film corresponding to a lead shape, forming an MR film, and patterning the MR film corresponding to a lead shape and the shape of a magnetic field response portion. Alternatively, a magnetic field providing film and a conductor film are layered in the order in a passive region other than the magnetic field response portion, forming a laminate film such that the magnetic field providing film is exposed at surface of the edge portion on the magnetic field response portion side. The MR film is formed on almost only the magnetic field response portion so that the MR film overlaps with the exposed portion of the magnetic field providing film.
摘要翻译：磁阻效应头包括具有磁场响应部分的磁阻效应膜的磁阻效应元件部分，用于提供具有偏磁场的磁阻效应膜的磁场提供膜，以及用于向磁阻提供电流的导体膜其中所述磁阻效应元件部分具有至少由所述导体膜，所述磁场提供膜和所述磁阻效应膜构成的层叠结构部分，所述层叠结构部分按所述顺序层叠在所述磁场响应部以外。磁阻效应头是通过对由导体膜构成的叠层膜和与引线形状相对应的磁场提供膜构成的MR膜进行构图，并且对与引线形状对应的MR膜和磁场的形状响应部分。或者，磁场提供膜和导体膜在除磁场响应部以外的无源区域中依次层叠，形成层叠膜，使得磁场提供膜在磁性边缘部分的表面露出场响应部分侧。 MR膜几乎仅形成在磁场响应部分上，使得MR膜与磁场提供膜的暴露部分重叠。

59. 发明授权

US5777542A Magnetoresistance effect device and manufacturing method thereof 失效
标题翻译：磁阻效应器及其制造方法
公开(公告)号：US5777542A
公开(公告)日：1998-07-07
申请号：US702894
申请日：1996-08-26
申请人： Yuichi Ohsawa , Hiroaki Yoda
发明人： Yuichi Ohsawa , Hiroaki Yoda
IPC分类号： G11B5/012 , G11B5/39 , G11B5/40 , H01L43/08 , H01L43/00
CPC分类号： G11B5/3906 , H01L43/08 , G11B5/012 , G11B5/40 , Y10T29/49034
摘要： In a magnetoresistance effect device that has leads, a magnetic gap layer, and a magnetic shield layer that are laminated on a magnetoresistance effect film, an insulation film is formed on a main surface at the edge portions of the leads (namely, on a non-tapered surface). Thus, a film quality deteriorated region of the magnetic gap layer is spaced apart from an electric field concentrated portion. In addition, the insulation film has a mask layer on a conductor layer formed on the magnetoresistance effect film. When a pair of leads are formed by the ion-milling process, a magnetic gap layer is formed with the mask layer on the non-tapered surface of the leads. Thus, since an insulation film is formed at the edge portions of the leads, the lower corner portion of the magnetic gap layer becomes an edge portion of the insulation film. In this portion, the deterioration of the film quality is inevitable. However, the electric field concentrated portion is still the edge portions of the leads. Thus, since the film quality deteriorated portion is spaced apart from the electric field concentrated portion, the dielectric breakdown hardly takes place.
摘要翻译：在层叠在磁阻效应膜上的具有引线，磁隙层和磁屏蔽层的磁阻效应器件中，在引线的边缘部分的主表面上（即，非绝缘膜上）形成绝缘膜， -锥面）。因此，磁隙层的膜质劣化区域与电场集中部分隔开。此外，绝缘膜在形成于磁阻效应膜上的导体层上具有掩模层。当通过离子研磨工艺形成一对引线时，在引线的非锥形表面上形成具有掩模层的磁隙层。因此，由于在引线的边缘部分处形成绝缘膜，所以磁隙层的下角部分成为绝缘膜的边缘部分。在这部分中，电影质量的恶化是不可避免的。然而，电场集中部分仍然是引线的边缘部分。因此，由于膜质量恶化部分与电场集中部分间隔开，所以几乎不发生电介质击穿。

60. 发明授权

US5576915A Magnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange bias inner magnetic films thereof 失效
标题翻译：具有反铁磁性子层的磁阻头插入在第一和第二自旋阀单元之间以交换其内部磁性膜
公开(公告)号：US5576915A
公开(公告)日：1996-11-19
申请号：US472487
申请日：1995-06-07
申请人： Junichi Akiyama , Hiroaki Yoda , Yuichi Ohsawa , Hitoshi Iwasaki
发明人： Junichi Akiyama , Hiroaki Yoda , Yuichi Ohsawa , Hitoshi Iwasaki
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , B82Y10/00 , B82Y25/00 , G11B5/3954 , G11B5/399 , G11B2005/3996
摘要： A magnetoresistive head includes an antiferromagnetic portion interposed between first and second spin-valve units. Sense current supply directions through the first and second spin-valve units are perpendicular to a head facing surface of a magnetic recording medium. The first spin-valve unit is formed of a first inner magnetic film, a first outer magnetic film and a nonmagnetic film interposed between and in direct physical contact with the first inner magnetic film and the first outer magnetic film. The second spin-valve unit is formed of a second inner magnetic film, a second outer magnetic film and a nonmagnetic film interposed between and in direct physical contact with the second inner magnetic film and the second outer magnetic film. The antiferromagnetic portion is formed of a first antiferromagnetic sublayer and a second antiferromagnetic sublayer laminated on the first antiferromagnetic sublayer. The first antiferromagnetic sublayer is in contact with the first inner magnetic film to apply a first exchange bias magnetic field to the first inner magnetic film in a direction perpendicular to the head facing surface of the magnetic recording medium. The second antiferromagnetic sublayer is in contact with the second inner magnetic film to apply a second exchange bias magnetic field to the second inner magnetic film in a direction perpendicular to the surface of the magnetic recording medium. The second exchange bias magnetic field has a polarity opposite to that of the first exchange bias magnetic field.
摘要翻译：磁阻头包括介于第一和第二自旋阀单元之间的反铁磁部分。通过第一和第二自旋阀单元的感测电流供给方向垂直于磁记录介质的朝向头部的表面。第一自旋阀单元由第一内部磁性膜，第一外部磁性膜和介于第一内部磁性膜和第一外部磁性膜直接物理接触之间的非磁性膜形成。第二自旋阀单元由第二内部磁性膜，第二外部磁性膜和介于第二内部磁性膜和第二外部磁性膜直接物理接触之间的非磁性膜形成。反铁磁部分由层叠在第一反铁磁性子层上的第一反铁磁性子层和第二反铁磁性层构成。第一反铁磁性子层与第一内部磁性膜接触，以在垂直于磁记录介质的朝向磁头的表面的方向上向第一内部磁性膜施加第一交换偏置磁场。第二反铁磁子层与第二内磁性膜接触，以在垂直于磁记录介质的表面的方向上向第二内磁膜施加第二交换偏置磁场。第二交换偏置磁场的极性与第一交换偏置磁场的极性相反。

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