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    • 52. 发明授权
    • Light emitting diode
    • 发光二极管
    • US08896011B2
    • 2014-11-25
    • US12050873
    • 2008-03-18
    • Yeo Jin YoonJong Kyu KimJun Hee Lee
    • Yeo Jin YoonJong Kyu KimJun Hee Lee
    • H01L33/00H01L27/15H01L33/38H01L33/62
    • H01L27/15H01L27/156H01L33/385H01L33/387H01L33/62H01L2924/0002H01L2924/00
    • AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with respect to those of adjacent another of the light emitting cells.
    • 根据本发明的AC LED包括衬底和至少一个具有串联连接在衬底上的多个发光单元的串联阵列。 每个发光单元包括由形成在基板顶部上的第一导电化合物半导体层构成的下半导体层,由形成于下半导体层顶部的第二导电化合物半导体层构成的上半导体层,活性层 介于下半导体层和上半导体层之间的下电极,形成在衬底的第一角上露出的下半导体层上的下电极,形成在上半导体层上的上电极层和形成在上电极层上的上电极焊盘 在基片的第二个角落。 上电极焊盘和下电极分别设置在彼此对角相对的角上,并且各发光单元被布置成使得一个发光单元的上电极焊盘和下电极相对于 相邻另一个发光单元的那些。
    • 53. 发明授权
    • Ac light emitting device having photonic crystal structure and method of fabricating the same
    • 具有光子晶体结构的Ac发光器件及其制造方法
    • US08716727B2
    • 2014-05-06
    • US12065063
    • 2006-09-06
    • Jae Ho LeeYeo Jin YoonEu Jin HwangJong Kyu KimJun Hee Lee
    • Jae Ho LeeYeo Jin YoonEu Jin HwangJong Kyu KimJun Hee Lee
    • H01L33/00
    • H01L25/0753H01L33/007H01L33/20H01L2224/48137H01L2224/49107H01L2224/73265
    • Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided.
    • 公开了具有光子晶体结构的AC发光器件及其制造方法。 发光器件包括多个发光单元和将发光单元彼此电连接的金属布线。 此外,每个发光单元包括第一导电类型半导体层,设置在第一导电类型半导体层的一个区域上的第二导电类型半导体层以及置于第一和第二导电类型半导体层之间的有源层。 此外,在第二导电型半导体层中形成光子晶体结构。 光子晶体结构防止从有源层发射的光通过周期性阵列横向传播,使得可以提高发光器件的光提取效率。 此外,金属配线将多个发光单元彼此电连接,从而可以提供交流发光装置。
    • 54. 发明授权
    • Light emitting diode having electrode extensions for current spreading
    • 具有用于电流扩展的电极延伸的发光二极管
    • US08680559B2
    • 2014-03-25
    • US12941536
    • 2010-11-08
    • Kyoung Wan KimSoo Young MoonKyu Ho LeeYeo Jin YoonJeong Hee YangWon Cheol Seo
    • Kyoung Wan KimSoo Young MoonKyu Ho LeeYeo Jin YoonJeong Hee YangWon Cheol Seo
    • H01L33/00
    • H01L33/38H01L33/20
    • An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.
    • 本发明的一个示例性实施例公开了一种发光二极管,其包括具有彼此相对的第一边缘和第二边缘的基板,设置在基板上的发光结构,所述发光结构包括第一半导体层和第二半导体 布置在第一半导体层的上表面上的多个第一电极焊盘,布置在第一边缘附近的第一电极焊盘,布置在第二半导体层上的多个第二电极焊盘,布置在第二半导体层上的第二电极焊盘 在第二边缘附近,多个第一延伸部,每个第一延伸部从第一电极焊盘延伸,以及多个第二延伸部,每个第二延伸部从第二电极焊盘延伸。 第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分,其中入侵部分彼此间隔开并且不与第二电极焊盘连接。 此外,第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分,其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。
    • 59. 发明授权
    • Light emitting diode for AC operation
    • 用于交流操作的发光二极管
    • US08232565B2
    • 2012-07-31
    • US12607644
    • 2009-10-28
    • Chung Hoon LeeDae Won KimDae Sung KalWon Cheol SeoKyung Hee YeYeo Jin Yoon
    • Chung Hoon LeeDae Won KimDae Sung KalWon Cheol SeoKyung Hee YeYeo Jin Yoon
    • H01L33/00
    • H01L27/153H01L33/20H01L33/62H01L2224/48H05B33/0821
    • The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.
    • 本发明公开了一种发光二极管(LED),其包括布置在基板上的多个发光单元。 LED包括每个包括至少一个发光单元的半波发光单元,每个半波发光单元包括分别布置在其两端的第一和第二端子; 和全波发光单元,每个包括至少一个发光单元,每个全波发光单元包括分别在其两端形成的第三和第四端子。 每个全波发光单元的第三端子电连接到两个半波发光单元的第二端子,并且每个全波发光单元的第四端子电连接到另外两个半波发光单元的第一端子 波发光单元。 此外,第一半波发光单元串联连接在第一全波发光单元的第三端子和第二全波发光单元的第四端子之间,并且第二半波发光单元 串联连接在第一全波发光单元的第四端子和第二全波发光单元的第三端子之间。
    • 60. 发明授权
    • Light emitting diode having extensions of electrodes for current spreading
    • 具有用于电流扩散的电极延伸的发光二极管
    • US08076688B2
    • 2011-12-13
    • US12442267
    • 2006-09-25
    • Dae Won KimYeo Jin Yoon
    • Dae Won KimYeo Jin Yoon
    • H01L33/00
    • H01L33/38H01L33/20
    • Disclosed is a light emitting diode having extensions of electrodes for improving current spreading. The light emitting diode includes a lower semiconductor layer, an upper semiconductor layer and an active layer, which are formed on a substrate. The upper semiconductor layer is located above the lower semiconductor layer such that edge regions of the lower semiconductor layer are exposed, and has indents indented in parallel with diagonal directions from positions in the edge regions adjacent to corners of the substrate in a clockwise or counterclockwise direction to expose the lower semiconductor layer. The indents have distal ends spaced apart from each other. Meanwhile, a lower electrode is formed on the exposed region of the lower semiconductor layer corresponding to the first corner of the substrate, and an upper electrode is formed on a transparent electrode layer on the semiconductor layer. Lower extensions extending from the lower electrode are formed on the exposed edge regions of the lower semiconductor layer and on the regions of the lower semiconductor layer exposed through the indents. An upper extension extending from the upper electrode are formed on the transparent electrode layer. The lower and upper extensions improve current spreading, particularly, in a light emitting diode with a large area.
    • 公开了一种具有用于改善电流扩展的电极延伸的发光二极管。 发光二极管包括形成在基板上的下半导体层,上半导体层和有源层。 上半导体层位于下半导体层之上,使得下半导体层的边缘区域被暴露,并且具有从与基板的角部相邻的边缘区域中的顺时针或逆时针方向的位置与对角线方向平行缩进的凹口 以暴露下半导体层。 凹痕的远端彼此间隔开。 同时,在与半导体层的第一角对应的下半导体层的露出区上形成下电极,在半导体层上的透明电极层上形成上电极。 在下半导体层的暴露的边缘区域和通过凹口暴露的下半导体层的区域上形成从下电极延伸的下延伸部。 在透明电极层上形成从上部电极延伸的上延伸部。 下延伸和上延伸改善电流扩散,特别是在具有大面积的发光二极管中。