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51. 发明授权

US07018898B2 Non-volatile two transistor semiconductor memory cell and method for producing the same 有权
标题翻译：非挥发性双晶体管半导体存储单元及其制造方法
公开(公告)号：US07018898B2
公开(公告)日：2006-03-28
申请号：US10501430
申请日：2002-12-10
申请人： Franz Schuler , Georg Tempel
发明人： Franz Schuler , Georg Tempel
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , G11C16/0433 , H01L27/115 , H01L27/11524
摘要： The invention relates to a nonvolatile two-transistor semiconductor memory cell and an associated fabrication method, source and drain regions (2) for a selection transistor (AT) and a memory transistor (ST) being formed in a substrate (1). The memory transistor (ST) has a first insulation layer (3), a charge storage layer (4), a second insulation layer (5) and a memory transistor control layer (6), while the selection transistor (AT) has a first insulation layer (3′) and a selection transistor control layer (4*). By using different materials for the charge storage layer (4) and the selection transistor control layer (4*), it is possible to significantly improve the charge retention properties of the memory cell by adapting the substrate doping with electrical properties remaining the same.
摘要翻译：本发明涉及一种非易失性双晶体管半导体存储单元及相关的制造方法，用于选择晶体管（AT）的源极和漏极区（2）和存储晶体管（ST）形成在衬底（1）中。存储晶体管（ST）具有第一绝缘层（3），电荷存储层（4），第二绝缘层（5）和存储晶体管控制层（6），而选择晶体管（AT）绝缘层（3'）和选择晶体管控制层（4 *）。通过使用不同的材料用于电荷存储层（4）和选择晶体管控制层（4 *），通过使衬底掺杂的电性能保持不变，可以显着提高存储单元的电荷保持性能。

52. 发明申请

US20050121714A1 Non-volatile two-transistor semiconductor memory cell and method for producing the same 有权
标题翻译：非挥发性双晶体管半导体存储单元及其制造方法
公开(公告)号：US20050121714A1
公开(公告)日：2005-06-09
申请号：US10501406
申请日：2002-12-10
申请人： Franz Schuler , Georg Tempel
发明人： Franz Schuler , Georg Tempel
IPC分类号： H01L21/8246 , H01L27/115 , H01L29/792 , H01L21/336 , H01L29/76 , H01L29/788
CPC分类号： H01L27/11568 , H01L29/66833 , H01L29/7923 , Y10S438/954
摘要： The invention relates to a nonvolatile semiconductor memory cell and to an associated fabrication method, a source region (7), a drain region (8) and a channel region lying in between being formed in a substrate (1). In order to realize locally delimited memory locations (LB, RB), an electrically non-conductive charge storage layer (3) situated on a first insulation layer (2) is divided by an interruption (U), thereby preventing, in particular, a lateral charge transport between the memory locations (LB, RB) and significantly improving the charge retention properties.
摘要翻译：本发明涉及一种非易失性半导体存储单元及其相关的制造方法，源区域（7），漏极区域（8）和位于衬底（1）之间的沟道区域之间。为了实现局部定界的存储位置（LB，RB），位于第一绝缘层（2）上的非导电电荷存储层（3）被中断（U）划分，从而特别地防止记忆位置（LB，RB）之间的横向电荷传输并显着改善电荷保持性质。

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