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51. 发明申请

US20050161742A1 Semiconductor device and semiconductor device production system 有权
公开(公告)号：US20050161742A1
公开(公告)日：2005-07-28
申请号：US11087652
申请日：2005-03-24
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L27/01 , H01L31/0392
CPC分类号： H01L21/02683 , H01L21/2022 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696
摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.

52. 发明申请

US20050098784A1 Semiconductor device and semiconductor device production system 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US20050098784A1
公开(公告)日：2005-05-12
申请号：US11013539
申请日：2004-12-17
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/00 , H01L29/76
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

53. 发明授权

US06812491B2 Semiconductor memory cell and semiconductor memory device 有权
公开(公告)号：US06812491B2
公开(公告)日：2004-11-02
申请号：US10393768
申请日：2003-03-21
申请人： Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Shunpei Yamazaki
发明人： Kiyoshi Kato , Atsuo Isobe , Hidekazu Miyairi , Shunpei Yamazaki
IPC分类号： H01L2976
CPC分类号： H01L21/28273 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/12 , H01L27/1281 , H01L29/04 , H01L29/42332 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , H01L29/7881 , H01L29/792
摘要： An insulating film with a linear concave portion is formed and a semiconductor film is formed thereon by deposition. The semiconductor film is irradiated with laser light to melt the semiconductor film and the melted semiconductor is poured into the concave portion, where it is crystallized. This makes distortion or stress accompanying crystallization concentrate on other regions than the concave portion. A surface of this crystalline semiconductor film is etched away, thereby forming in the concave portion a crystalline semiconductor film which is covered with side walls of the concave portion from the sides and which has no other grain boundaries than twin crystal. TFTs and memory TFTs having this crystalline semiconductor film as their channel regions are highly reliable, have high field effect mobility, and are less fluctuated in characteristic. Accordingly, a highly reliable semiconductor memory device which can operate at high speed is obtained.

54. 发明授权

US09000431B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09000431B2
公开(公告)日：2015-04-07
申请号：US13344015
申请日：2012-01-05
申请人： Hidekazu Miyairi , Takeshi Osada , Kengo Akimoto , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Takeshi Osada , Kengo Akimoto , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L29/423 , H01L27/12
CPC分类号： H01L29/78648 , H01L27/1225 , H01L27/124 , H01L29/42384 , H01L29/78645 , H01L29/7869 , H01L29/78696
摘要： As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. The pixel portion and the driver portion are provided over the same substrate, whereby manufacturing cost can be reduced.
摘要翻译：作为显示装置具有更高的清晰度，像素数，栅极线和信号线的数量增加。当栅极线和信号线的数量增加时，存在难以安装包括用于通过接合等驱动栅极和信号线的驱动电路的IC芯片，由此增加制造成本的问题。用于驱动像素部分的像素部分和驱动电路设置在相同的基板上，驱动电路的至少一部分包括薄膜晶体管，该薄膜晶体管使用介于氧化物半导体上方和下方的栅电极之间的氧化物半导体。像素部分和驱动器部分设置在相同的基板上，由此可以降低制造成本。

55. 发明授权

US08980684B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US08980684B2
公开(公告)日：2015-03-17
申请号：US13346963
申请日：2012-01-10
申请人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
发明人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
IPC分类号： H01L27/12 , H01L29/786
摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

56. 发明授权

US08945981B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08945981B2
公开(公告)日：2015-02-03
申请号：US12511273
申请日：2009-07-29
申请人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
发明人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
IPC分类号： H01L21/00 , H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/78606
摘要： To provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability and a manufacturing method of the semiconductor device with high mass productivity. The summary is that an inverted-staggered (bottom-gate) thin film transistor is included in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, a channel protective layer is provided in a region that overlaps a channel formation region of the semiconductor layer, and a buffer layer is provided between the semiconductor layer and source and drain electrodes. An ohmic contact is formed by intentionally providing the buffer layer having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrodes.
摘要翻译：提供一种包括具有优异的电特性和高可靠性的薄膜晶体管的半导体器件和具有高质量生产率的半导体器件的制造方法。总而言之，包括使用含有In，Ga和Zn的氧化物半导体膜作为半导体层的反交错（底栅极）薄膜晶体管，沟道保护层设置在与沟道形成区域，并且在半导体层和源极和漏极之间设置有缓冲层。通过有意地提供具有比半导体层和源极和漏极之间的半导体层更高的载流子浓度的缓冲层来形成欧姆接触。

57. 发明授权

US08518739B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US08518739B2
公开(公告)日：2013-08-27
申请号：US12615615
申请日：2009-11-10
申请人： Hidekazu Miyairi , Takeshi Osada , Kengo Akimoto , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Takeshi Osada , Kengo Akimoto , Shunpei Yamazaki
IPC分类号： H01L21/00 , H01L21/16
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/78648
摘要： As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver circuit are provided over the same substrate, manufacturing cost can be reduced.

58. 发明授权

US08513664B2 Thin film transistor, semiconductor device and electronic device 有权
标题翻译：薄膜晶体管，半导体器件和电子器件
公开(公告)号：US08513664B2
公开(公告)日：2013-08-20
申请号：US12490458
申请日：2009-06-24
申请人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki
发明人： Toshiyuki Isa , Yasuhiro Jinbo , Sachiaki Tezuka , Koji Dairiki , Hidekazu Miyairi , Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor includes, as a buffer layer, an amorphous semiconductor layer having nitrogen or an NH group between a gate insulating layer and source and drain regions and at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.
摘要翻译：薄膜晶体管包括作为缓冲层的至少在源极和漏极区域上具有氮或NH基的非晶半导体层，栅极绝缘层与源极和漏极区之间。与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。

59. 发明授权

US08284142B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08284142B2
公开(公告)日：2012-10-09
申请号：US12567413
申请日：2009-09-25
申请人： Shunpei Yamazaki , Takeshi Osada , Hidekazu Miyairi , Yasuhiro Jinbo
发明人： Shunpei Yamazaki , Takeshi Osada , Hidekazu Miyairi , Yasuhiro Jinbo
IPC分类号： G09G3/36
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/134363 , G02F1/13439 , G02F1/1365 , H01L27/1214 , H01L27/1229 , H01L27/1251 , H01L27/1255 , H01L29/04 , H01L29/78648 , Y10T428/24331
摘要： A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT and a pixel electrode which is connected to a wiring of the first inverted staggered TFT, the switch portion or the buffer portion includes a second inverted staggered TFT in which a first insulating layer, a semiconductor layer, and a second insulating layer are interposed between a first gate electrode and a second gate electrode, the logic circuit portion includes an inverter circuit including a third inverted staggered thin film transistor and a fourth inverted staggered thin film transistor, and the first to the fourth inverted staggered thin film transistors have the same polarity. The inverter circuit may be an EDMOS circuit.
摘要翻译：提供了一种可以缩小框架并且显示特性优异的显示装置。在包括开关部分或缓冲部分，逻辑电路部分和像素部分的显示装置中，像素部分包括连接到第一反交错TFT的布线的第一反交错TFT和像素电极，开关部分或缓冲部分包括其中第一绝缘层，半导体层和第二绝缘层插入在第一栅电极和第二栅电极之间的第二反交错TFT，所述逻辑电路部分包括逆变器电路，包括第三反交错薄膜晶体管和第四反交错薄膜晶体管，并且第一至第四反交错薄膜晶体管具有相同的极性。逆变器电路可以是EDMOS电路。

60. 发明授权

US08093593B2 Semiconductor device having multichannel transistor 有权
标题翻译：具有多通道晶体管的半导体器件
公开(公告)号：US08093593B2
公开(公告)日：2012-01-10
申请号：US11516616
申请日：2006-09-07
申请人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
发明人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
IPC分类号： H01L29/10
CPC分类号： H01L29/78675 , H01L27/1214 , H01L27/1222 , H01L27/127 , H01L27/1285 , H01L29/04 , H01L29/66757
摘要： A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.
摘要翻译：首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。在一条或多条线路中聚光的连续波激光束用于激光束。蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。半导体区域的第二形状被设置成在从多个凸起端部延伸的各个晶体区域上形成沟道形成范围。消除了与沟道形成区域相邻的半导体区域。

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