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51. 发明授权

US09054206B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US09054206B2
公开(公告)日：2015-06-09
申请号：US12222109
申请日：2008-08-01
申请人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Foruno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Foruno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
IPC分类号： H01L21/84 , H01L29/786 , H01L29/04 , H01L29/417 , H01L29/49 , H01L29/66 , H01L21/02 , H01L21/67 , H01L27/12
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/0262 , H01L21/67207 , H01L27/1288 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78678
摘要： After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.

52. 发明授权

US08921858B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08921858B2
公开(公告)日：2014-12-30
申请号：US12213733
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hidekazu Miyairi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hidekazu Miyairi
IPC分类号： H01L29/04 , H01L29/786 , H01L29/66 , H01L29/49 , H01L29/417
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765
摘要： In a light-emitting device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
摘要翻译：在具有反交错薄膜晶体管的发光器件中，反交错薄膜晶体管形成如下：在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成用作沟道形成区的微晶半导体膜; 在微晶半导体膜上形成缓冲层; 在缓冲层上形成一对源极和漏极区; 并且形成与源区和漏区接触的一对源电极和漏电极，以便露出源区和漏区的一部分。

53. 发明授权

US08519619B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08519619B2
公开(公告)日：2013-08-27
申请号：US13234416
申请日：2011-09-16
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L27/3206 , H01L27/322 , H01L27/3246 , H01L27/3276 , H01L51/5209 , H01L51/5218 , H01L51/5221 , H01L51/5228 , H01L51/5234 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5271 , H01L2251/5315
摘要： A light-emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator (19) is curved to have a radius of curvature, a slope is formed along the curved face while partially exposing layers (18c and 18d) of a first electrode, and a layer (18b) of the first electrode is exposed in a region that serves as a light emitting region. Light emitted from an organic compound layer (20) is reflected by the slope of the first electrode (layers 18c and 18d) to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
摘要翻译：提供了一种构造为增加沿一定方向取出的光量的发光器件以及制造该发光器件的方法。作为蚀刻处理的结果，绝缘体（19）的上边缘部分被弯曲成具有曲率半径，沿着弯曲面形成斜面，同时部分地暴露第一电极的层（18c和18d），并且第一电极的层（18b）暴露在用作发光区域的区域中。从有机化合物层（20）发射的光被第一电极（层18c和18d）的斜率反射，以增加沿图1中箭头所示方向取出的光的总量。 1A。

54. 发明授权

US08456382B2 Light emitting device, driving support system, and helmet 有权
标题翻译：发光装置，驾驶辅助系统和头盔
公开(公告)号：US08456382B2
公开(公告)日：2013-06-04
申请号：US12572368
申请日：2009-10-02
申请人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Jun Koyama , Hideaki Kuwabara
IPC分类号： G09G5/00
CPC分类号： G02B27/01 , B60K28/06 , B60W30/095 , B60W40/02 , B60W40/08 , B60W50/14 , B60W2540/22 , B60W2550/402 , G01C21/365 , G02B5/30 , G02B27/017 , G02B27/0172 , H01L27/3244 , H01L51/5281 , H01L2251/5323
摘要： It is an object to provide a driving support system and a display device suitable for the driving support system. According to the driving support system, change in driver's mental and physical conditions can be caught instantaneously and a warning light emission display is given within the forward sight of the driver in order to call the driver's attention. A light emitting device of the driving support system can display a far side of the display. A display may be switched between a transmission mode and a non-transmission mode by adjusting a movable polarizer.
摘要翻译：本发明的目的是提供一种适于驾驶支持系统的驾驶支持系统和显示装置。根据驾驶辅助系统，驾驶员的身体和身体状况的改变可以立即被抓住，并在司机的前方看到警告发光显示，以引起驾驶员的注意。驱动支撑系统的发光装置可以显示显示器的远侧。可以通过调节可动偏振器在显示器在传输模式和非传输模式之间切换。

55. 发明授权

US08441102B2 Semiconductor device having a capacitor 有权
标题翻译：具有电容器的半导体器件
公开(公告)号：US08441102B2
公开(公告)日：2013-05-14
申请号：US13234639
申请日：2011-09-16
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
IPC分类号： H01L29/00 , H01L23/48 , H01L29/40
CPC分类号： H01L21/6835 , H01L23/5385 , H01L23/5388 , H01L24/48 , H01L24/73 , H01L24/81 , H01L27/0688 , H01L27/12 , H01L29/66757 , H01L2221/68354 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81801 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01055 , H01L2924/01056 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10253 , H01L2924/12034 , H01L2924/12042 , H01L2924/13063 , H01L2924/13064 , H01L2924/14 , H01L2924/1423 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/3011 , H03H3/08 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.
摘要翻译：本发明的目的是提供一种在不使用半导体衬底的情况下集成各种元件的半导体器件及其制造方法。根据本发明，在与衬底分离的衬底上形成包括电感器，电容器，电阻元件，TFT元件，嵌入布线等的待分离层，并转移到电路板通过线112或焊料107与设置在电路板100中的布线图案114进行导电，从而形成高频模块等。

56. 发明授权

US08377764B2 Manufacturing method for light emitting device 有权
标题翻译：发光装置的制造方法
公开(公告)号：US08377764B2
公开(公告)日：2013-02-19
申请号：US13459122
申请日：2012-04-28
申请人： Shunpei Yamazaki , Hideaki Kuwabara , Masakazu Murakami
发明人： Shunpei Yamazaki , Hideaki Kuwabara , Masakazu Murakami
IPC分类号： H01L21/84
CPC分类号： H01L51/56 , C23C14/046 , C23C14/12 , C23C14/246 , C23C14/564 , H01L27/3244 , H01L33/44
摘要： The present invention provides a vapor deposition method and a vapor deposition system of film formation systems by which EL materials can be used more efficiently and EL materials having superior uniformity with high throughput rate are formed. According to the present invention, inside a film formation chamber, an evaporation source holder in a rectangular shape in which a plurality of containers sealing evaporation material is moved at a certain pitch to a substrate and the evaporation material is vapor deposited on the substrate. Further, a longitudinal direction of an evaporation source holder in a rectangular shape may be oblique to one side of a substrate, while the evaporation source holder is being moved. Furthermore, it is preferable that a movement direction of an evaporation source holder during vapor deposition be different from a scanning direction of a laser beam while a TFT is formed.
摘要翻译：本发明提供一种可以更有效地使用EL材料的成膜系统的气相沉积方法和气相沉积系统，并且形成具有高生产率的均匀性优异的EL材料。根据本发明，在成膜室内部，将密封蒸发材料的多个容器以一定间距移动到基板上的矩形状的蒸发源保持器和蒸发材料蒸镀在基板上。此外，蒸发源保持器的纵向方向可以在基板的一侧倾斜，同时蒸发源保持器被移动。此外，优选的是，蒸镀源夹持器在气相沉积期间的移动方向与形成TFT的激光束的扫描方向不同。

57. 发明申请

US20130010249A1 LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20130010249A1
公开(公告)日：2013-01-10
申请号：US13616052
申请日：2012-09-14
申请人： Shunpei Yamazaki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Hideaki Kuwabara
IPC分类号： G02F1/1339 , B32B37/24
CPC分类号： G02F1/1341 , G02F1/133351 , G02F2001/13415 , Y10T156/10
摘要： As the screen size becomes larger, it is required to make the device achieve higher definition, higher open area ratio, and higher reliability. Further, requirements for improvements in productivity and cost minimization are also increased. In the present invention, a substrate is pasted with a counter substrate after the liquid crystal material 114 is discharged (or dripped) only over a pixel area that is on a pixel electrode provided over a substrate with a large area by ink jet. Further, both of applying a seal material and dripping of a liquid crystal may be performed to the counter substrate. The total amount of liquid crystal use in a manufacturing process is reduced by forming a liquid crystal layer by ink jet.
摘要翻译：随着屏幕尺寸变大，需要使设备实现更高的清晰度，更高的开放面积比和更高的可靠性。此外，还提高了提高生产力和成本最小化的要求。在本发明中，在液晶材料114仅在通过喷墨的大面积设置在基板上的像素电极上的像素区域排出（或滴落）之后，将基板与对置基板粘贴。此外，可以对相对基板执行施加密封材料和液晶滴落两者。通过用喷墨形成液晶层，减少制造工序中使用的液晶的总量。

58. 发明授权

US08237164B2 Semiconductor device including magnet 有权
标题翻译：半导体装置包括磁铁
公开(公告)号：US08237164B2
公开(公告)日：2012-08-07
申请号：US12759999
申请日：2010-04-14
申请人： Toru Takayama , Junya Maruyama , Yumiko Ohno , Masakazu Murakami , Toshiji Hamatani , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Toru Takayama , Junya Maruyama , Yumiko Ohno , Masakazu Murakami , Toshiji Hamatani , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L29/772
CPC分类号： H01L27/3276 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1266 , H01L27/14634 , H01L27/14643 , H01L27/14683 , H01L27/3272 , H01L29/66757 , H01L29/78603 , H01L31/105 , H01L51/0024 , H01L51/003 , H01L51/5212 , H01L51/5253 , H01L2221/68368
摘要： (OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials.(MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.
摘要翻译：（目的）本发明的目的是提供一种减轻半导体器件及其制造方法，该方法是将待剥离的层粘贴到各种基材上。（解决问题的手段）在本发明中，在基板上形成被剥离层，然后将具有蚀刻阻挡膜的密封基板上的粘合材料粘贴在被剥离层上，然后仅除去密封衬底通过蚀刻或抛光。剩余的蚀刻阻挡膜用作阻挡膜。此外，可以将磁片作为粘贴部件粘贴。

59. 发明授权

US08053174B2 Manufacturing method for wiring 有权
标题翻译：接线方法
公开(公告)号：US08053174B2
公开(公告)日：2011-11-08
申请号：US11715468
申请日：2007-03-08
申请人： Shunpei Yamazaki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Hideaki Kuwabara
IPC分类号： G03F7/00 , H01L21/00
CPC分类号： H01L21/32139 , C23C16/45589 , C23C16/509 , C23C16/54 , H01J2237/3342 , H01L21/2855 , H01L21/28562 , H01L21/312 , H01L21/76802 , H01L21/76838 , H01L27/124 , H01L27/1288 , H01L27/3246 , H01L51/0017 , H01L51/0022 , H01L51/5206 , H01L51/56
摘要： In the case in which a film for a resist is formed by spin coating, there is a resist material to be wasted, and the process of edge cleaning is added as required. Further, when a thin film is formed on a substrate using a vacuum apparatus, a special apparatus or equipment to evacuate the inside of a chamber vacuum is necessary, which increases manufacturing cost. The invention is characterized by including: a step of forming conductive layers on a substrate having a dielectric surface in a selective manner with a CVD method, an evaporation method, or a sputtering method; a step of discharging a compound to form resist masks so as to come into contact with the conductive layer; a step of etching the conductive layers with plasma generating means using the resist masks under the atmospheric pressure or a pressure close to the atmospheric pressure; and a step of ashing the resist masks with the plasma generating means under the atmospheric pressure or a pressure close to the atmospheric pressure. With the above-mentioned characteristics, efficiency in use of a material is improved, and a reduction in manufacturing cost is realized.
摘要翻译：在通过旋涂形成抗蚀剂用膜的情况下，存在要浪费的抗蚀剂材料，根据需要添加边缘清洁处理。此外，当使用真空装置在基板上形成薄膜时，需要用于抽真空室内的专用装置或设备，这增加了制造成本。本发明的特征在于包括：通过CVD法，蒸发法或溅射法以选择性方式在具有电介质表面的基板上形成导电层的步骤; 将化合物排出以形成抗蚀剂掩模以与导电层接触的步骤; 在大气压或接近大气压的压力下使用抗蚀剂掩模的等离子体发生装置蚀刻导电层的步骤; 以及在大气压或接近大气压的压力下用等离子体产生装置对抗蚀剂掩模进行灰化的步骤。利用上述特征，提高了材料的使用效率，实现了制造成本的降低。

60. 发明授权

US08021204B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08021204B2
公开(公告)日：2011-09-20
申请号：US12538563
申请日：2009-08-10
申请人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Satoshi Seo , Hideaki Kuwabara
IPC分类号： H01J9/24 , H01J9/00 , H01J9/14 , B44C1/22
CPC分类号： H01L27/3206 , H01L27/322 , H01L27/3246 , H01L27/3276 , H01L51/5209 , H01L51/5218 , H01L51/5221 , H01L51/5228 , H01L51/5234 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5271 , H01L2251/5315
摘要： All lights generated in an organic compound layer are not taken out towards a TFT from a cathode as a transparent electrode. For instance, the light is emitted in a lateral direction (direction parallel to the substrate surface) but the light emitted in the lateral direction is not taken out resultantly, which leads to a loss. Therefore, a light emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator (19) is curved to have a radius of curvature, a slope is formed along the curved face while partially exposing layers (18c and 18d) of a first electrode, and a layer (18b) of the first electrode is exposed in a region that serves as a light emitting region. Light emitted from an organic compound layer (20) is reflected by the slope of the first electrode (layers 18c and 18d) to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
摘要翻译：在有机化合物层中产生的所有光不从作为透明电极的阴极朝向TFT取出。例如，光在横向方向（平行于基板表面的方向）发射，但是在横向方向上发射的光不会被取出，导致损失。因此，提供了构造成增加沿某一方向取出的光量的发光器件以及制造该发光器件的方法。作为蚀刻处理的结果，绝缘体（19）的上边缘部分被弯曲成具有曲率半径，沿着弯曲面形成斜面，同时部分地暴露第一电极的层（18c和18d），并且第一电极的层（18b）暴露在用作发光区域的区域中。从有机化合物层（20）发射的光被第一电极（层18c和18d）的斜率反射，以增加沿图1中箭头所示方向取出的光的总量。 1A。

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