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51. 发明授权

US09086567B2 Display system 有权
标题翻译：显示系统
公开(公告)号：US09086567B2
公开(公告)日：2015-07-21
申请号：US11029342
申请日：2005-01-06
申请人： Shunpei Yamazaki , Jun Koyama , Keisuke Hayashi
发明人： Shunpei Yamazaki , Jun Koyama , Keisuke Hayashi
IPC分类号： G09G5/00 , G06F3/041 , G02B27/01 , A61B5/16 , A61B5/021 , A61B5/024 , A61B5/00
CPC分类号： G02B27/0176 , A61B5/021 , A61B5/024 , A61B5/16 , A61B5/486 , G02B27/017 , G02B2027/0178 , G09G3/30 , G09G2300/08
摘要： To provide a goggle type display device system that can prevent harm to user's health. If anomaly is recognized in mind and body of a user, first video signals provided from an external device stop being displayed on LCD panels and, instead, outside scenery taken by CCD image capture elements is displayed. The user may be alarmed by this about anomaly of his or her body and, further, relaxed by looking at the outside scenery presented.
摘要翻译：提供可以防止损害用户健康的护目镜型显示设备系统。如果在用户的头脑和身体中识别到异常，则从外部设备提供的第一视频信号停止显示在LCD面板上，而是显示由CCD图像捕获元件拍摄的外部风景。用户可能对此感到震惊，关于他或她身体的异常情况，还可以通过观察所呈现的外部景观来放松。

52. 发明授权

US09035314B2 Method for manufacturing an electrooptical device 有权
标题翻译：电光装置的制造方法
公开(公告)号：US09035314B2
公开(公告)日：2015-05-19
申请号：US13438875
申请日：2012-04-04
申请人： Shunpei Yamazaki , Jun Koyama
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： H01L29/786 , H01L27/28 , H01L27/12 , G02F1/13 , G02F1/1345 , H01L29/49 , G02F1/1362
CPC分类号： G02F1/1368 , G02F1/13454 , G02F1/136213 , H01L27/1222 , H01L27/124 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to provide an electrooptical device having high operation performance and reliability, and a method of manufacturing the electrooptical device.Lov region 207 is disposed in n-channel TFT 302 that comprises a driver circuit, and a TFT structure which is resistant to hot carriers is realized. Loff regions 217 to 220 are disposed in n-channel TFT 304 that comprises a pixel section, and a TFT structure of low off current is realized. An input-output signal wiring 305 and gate wiring 306 are formed by laminating a first wiring and a second wiring having lower resistivity than the first wiring, and wiring resistivity is steeply reduced.
摘要翻译：本发明的目的是提供一种具有高操作性能和可靠性的电光装置，以及制造电光装置的方法。 Lov区域207设置在包括驱动电路的n沟道TFT 302中，并且实现了耐热载流子的TFT结构。 Loff区域217至220设置在包括像素部分的n沟道TFT 304中，并且实现了低关断电流的TFT结构。通过层叠具有比第一布线低的电阻率的第一布线和第二布线来形成输入输出信号布线305和栅极布线306，并且布线电阻率急剧减小。

53. 发明授权

US08866143B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08866143B2
公开(公告)日：2014-10-21
申请号：US13411842
申请日：2012-03-05
申请人： Shunpei Yamazaki , Jun Koyama , Toru Takayama , Toshiji Hamatani
发明人： Shunpei Yamazaki , Jun Koyama , Toru Takayama , Toshiji Hamatani
IPC分类号： H01L33/08 , H01L29/423 , H01L27/12 , G02F1/1368 , G02F1/1345 , H01L29/49 , G02F1/1362 , H01L29/66 , H01L29/786
CPC分类号： G02F1/13454 , G02F1/136286 , G02F1/1368 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78645 , H01L29/78684
摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.
摘要翻译：本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅极电极和栅极布线，其中为了实现该目的，本发明的结构是在同一基板上具有像素TFT 设置在显示区域和设置在显示区域周围的驱动电路TFT，其中像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过与形成的栅极布线的连接器电接触并且连接器设置在像素TFT和驱动电路TFT的沟道形成区域的外侧。

54. 发明授权

US08823754B2 Liquid crystal display device and method for driving the same 有权
标题翻译：液晶显示装置及其驱动方法
公开(公告)号：US08823754B2
公开(公告)日：2014-09-02
申请号：US13078206
申请日：2011-04-01
申请人： Jun Koyama , Hiroyuki Miyake , Shunpei Yamazaki
发明人： Jun Koyama , Hiroyuki Miyake , Shunpei Yamazaki
IPC分类号： G09G5/10
CPC分类号： G09G5/18 , G02F1/13624 , G02F1/136286 , G06F3/0412 , G06F3/044 , G06F3/045 , G09G3/006 , G09G3/3413 , G09G3/3426 , G09G3/3648 , G09G3/3674 , G09G3/3696 , G09G2300/0408 , G09G2300/0426 , G09G2300/08 , G09G2310/0235 , G09G2310/0286
摘要： To increase the frequency of input of image signals in terms of design in a field-sequential liquid crystal display device. Image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix in a pixel portion of the liquid crystal display device. Thus, the frequency of input of an image signal to each pixel can be increased without change in response speed of a transistor or the like included in the liquid crystal display device.
摘要翻译：在现场顺序液晶显示装置的设计方面增加图像信号的输入频率。图像信号同时提供给在液晶显示装置的像素部分中排列成矩阵的像素中的多行中提供的像素。因此，可以在不改变包括在液晶显示装置中的晶体管等的响应速度的情况下增加对每个像素的图像信号的输入频率。

55. 发明授权

US08816484B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08816484B2
公开(公告)日：2014-08-26
申请号：US12068398
申请日：2008-02-06
申请人： Jun Koyama , Shunpei Yamazaki
发明人： Jun Koyama , Shunpei Yamazaki
IPC分类号： H01L23/02
CPC分类号： G06K19/07775 , G06K19/07722 , H01L23/5227 , H01L23/528 , H01L27/0203 , H01L27/0688 , H01L27/12 , H01L27/1214 , H01L27/1225 , H01L27/1266 , H01L27/1277 , H01L27/13 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device, in which an integrated circuit portion and an antenna are easily connected, can surely transmit and receive a signal to and from a communication device. The integrated circuit portion is formed of a thin film transistor over a surface of a substrate so that the area occupied by the integrated circuit portion is increased. The antenna is provided over the integrated circuit portion, and the thin film transistor and the antenna are connected. Further, the area over the substrate occupied by the integrated circuit portion is 0.5 to 1 times as large as the area of the surface of the substrate. Thus, the size of the integrated circuit portion can be close to the desired size of the antenna, so that the integrated circuit portion and the antenna are easily connected and the semiconductor device can surely transmit and receive a signal to and from the communication device.
摘要翻译：集成电路部分和天线容易连接的半导体器件可以肯定地向通信设备发送信号和从通信设备接收信号。集成电路部分由衬底的表面上的薄膜晶体管形成，使得由集成电路部分占据的面积增加。天线设置在集成电路部分上，并且薄膜晶体管和天线被连接。此外，由集成电路部分占据的衬底上的面积是衬底表面的面积的0.5至1倍。因此，集成电路部分的尺寸可以接近天线的期望尺寸，使得集成电路部分和天线容易连接，并且半导体器件可以可靠地向通信装置发送信号和从通信装置接收信号。

56. 发明授权

US08816349B2 Semiconductor device comprising oxide semiconductor layer 有权
标题翻译：包括氧化物半导体层的半导体器件
公开(公告)号：US08816349B2
公开(公告)日：2014-08-26
申请号：US12898357
申请日：2010-10-05
申请人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
发明人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
IPC分类号： H01L27/14
CPC分类号： H01L29/7869 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/324 , H01L21/76801 , H01L21/76828 , H01L21/76838 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606
摘要： By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
摘要翻译：通过使用包含Cu的导电层作为长引线，可以抑制布线电阻的增加。此外，包括Cu的导电层以与形成TFT的沟道区域的氧化物半导体层不重叠并被包括氮化硅的绝缘层包围的方式设置，由此Cu的扩散可以防止因此，可以制造高度可靠的半导体器件。具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。

57. 发明授权

US08803370B2 Wireless power feeding system and wireless power feeding method 有权
标题翻译：无线供电系统和无线供电方式
公开(公告)号：US08803370B2
公开(公告)日：2014-08-12
申请号：US13156483
申请日：2011-06-09
申请人： Shunpei Yamazaki , Jun Koyama , Yoshiyuki Kurokawa , Yutaka Shionoiri
发明人： Shunpei Yamazaki , Jun Koyama , Yoshiyuki Kurokawa , Yutaka Shionoiri
IPC分类号： H01H9/54
CPC分类号： H02J50/80 , H02J7/025 , H02J17/00 , H02J50/10 , H02J50/12 , H02J50/20 , H02J50/40 , H02J50/90 , Y10T307/944
摘要： An object is to provide a power feeding system and a power feeding method which are higher convenient for a power feeding user on the power receiving side. Another object is to provide a power feeding system and a power feeding method which can offer efficient services by determining or managing a power feeding user and controlling the amount of power supplied to the power receiver appropriately by a company on the power feeding side. A power feeding device which supplies power to a power receiver wirelessly manages the power receiver on the basis of identification information of the power receiver and controls power transmitted to the power receiver on the basis of position information of the power receiver.
摘要翻译：目的在于提供对受电方的供电用户更为方便的供电系统和供电方式。另一个目的是提供一种供电系统和馈电方法，其可以通过确定或管理供电用户并且由馈电侧的公司适当地控制供应给电力接收器的电力量来提供有效的服务。基于电力接收器的识别信息，向电力接收器供电的供电装置，根据电力接收机的识别信息，无线地对电力接收机进行管理，根据电力接收机的位置信息，控制发送给电力接收装置的电力。

58. 发明授权

US08735889B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08735889B2
公开(公告)日：2014-05-27
申请号：US13286280
申请日：2011-11-01
申请人： Shunpei Yamazaki , Hideomi Suzawa , Yoshihiro Kusuyama , Koji Ono , Jun Koyama
发明人： Shunpei Yamazaki , Hideomi Suzawa , Yoshihiro Kusuyama , Koji Ono , Jun Koyama
IPC分类号： H01L29/04
CPC分类号： H01L21/4846 , G02F1/13454 , G02F1/13458 , G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L21/02367 , H01L27/12 , H01L27/124 , H01L27/1277 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L29/78627
摘要： There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more.
摘要翻译：提供了即使在将显示区域的尺寸增加到大尺寸屏幕的情况下也实现低功耗的半导体器件的结构及其制造方法。像素部分中的栅电极形成为主要包含W的材料膜，主要包含Al的材料膜和主要包含Ti的材料膜以降低布线电阻的三层结构。使用IPC蚀刻装置蚀刻布线。栅电极为锥形，成为锥形的区域的宽度为1μm以上。

59. 发明授权

US08692653B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08692653B2
公开(公告)日：2014-04-08
申请号：US11716693
申请日：2007-03-12
申请人： Yutaka Shionoiri , Konami Izumi , Jun Koyama , Yoshiyuki Kurokawa , Shunpei Yamazaki , Tomoaki Atsumi , Takeshi Osada , Takayuki Ikeda , Masato Ishii
发明人： Yutaka Shionoiri , Konami Izumi , Jun Koyama , Yoshiyuki Kurokawa , Shunpei Yamazaki , Tomoaki Atsumi , Takeshi Osada , Takayuki Ikeda , Masato Ishii
IPC分类号： H04Q5/22
CPC分类号： H01Q1/36 , G06K7/10178 , G06K19/0705 , G06K19/0707 , G06K19/0723 , H01Q1/2225 , H01Q1/38 , H01Q7/00 , H01Q9/285 , H02N2/186
摘要： Objects of the invention are to provide a semiconductor device including an RFID, which can transmit and receive individual information without a check of remaining capacity of the battery and a change of the battery in accordance with deterioration over time of the battery for a driving power supply; and which maintains a favorable communication state even when electric power, as a power supply for driving, from an external radio wave or electromagnetic wave (carrier wave) is not sufficient. A battery is provided as a power supply for supplying electric power in the RFID, and electric power obtained by a power generation element is charged in the battery.
摘要翻译：本发明的目的是提供一种包括RFID的半导体器件，其可以在不检查电池的剩余容量的情况下发送和接收各个信息，并且根据用于驱动电源的电池的时间的变化，提供电池的变化 ; 并且即使作为来自外部无线电波或电磁波（载波）的驱动用电源的电力不足，也保持良好的通信状态。提供电池作为用于在RFID中提供电力的电源，并且通过发电元件获得的电力被充电在电池中。

60. 发明授权

US08674351B2 Semiconductor device and semiconductor memory device 有权
标题翻译：半导体器件和半导体存储器件
公开(公告)号：US08674351B2
公开(公告)日：2014-03-18
申请号：US13334850
申请日：2011-12-22
申请人： Jun Koyama , Shunpei Yamazaki
发明人： Jun Koyama , Shunpei Yamazaki
IPC分类号： H01L29/12 , G11C5/06
CPC分类号： H01L27/1225 , G11C11/403 , G11C16/0433 , H01L27/088 , H01L27/1156
摘要： A data retention period of a memory circuit is lengthened, power consumption is reduced, and a circuit area is reduced. Further, the number of times written data can be read to one data writing operation is increased. A memory circuit has a first field-effect transistor, a second field-effect transistor, and a third field-effect transistor. A data signal is input to one of a source and a drain of the first field-effect transistor. A gate of the second field-effect transistor is electrically connected to the other of the source and the drain of the first field-effect transistor. One of a source and a drain of the third field-effect transistor is electrically connected to a source or a drain of the second field-effect transistor.
摘要翻译：存储电路的数据保持期延长，功耗降低，电路面积减小。此外，写入数据的次数可以被读取，一个数据写入操作被增加。存储电路具有第一场效应晶体管，第二场效应晶体管和第三场效应晶体管。数据信号被输入到第一场效应晶体管的源极和漏极之一。第二场效应晶体管的栅极电连接到第一场效应晶体管的源极和漏极中的另一个。第三场效应晶体管的源极和漏极之一电连接到第二场效应晶体管的源极或漏极。

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