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51. 发明申请

US20100077135A1 MEMORY WEAR LEVELING METHOD, SYSTEM AND DEVICE 审中-公开
标题翻译：内存磨损方法，系统和设备
公开(公告)号：US20100077135A1
公开(公告)日：2010-03-25
申请号：US12499859
申请日：2009-07-09
申请人： Rong Li , Yuefeng Jin , Li Wang
发明人： Rong Li , Yuefeng Jin , Li Wang
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： A wear leveling method for a non-volatile memory is provided. The non-volatile memory includes a plurality of data blocks, each corresponding to a time value. The data blocks are arranged according to a sequence of the time values corresponding thereto. The arranged blocks form a key table. An erase operation is determined whether to be executed for the data blocks. When the erase operation is executed for the data blocks, the corresponding data block is erased according to a sequence of the time values of the data blocks in the key table.
摘要翻译：提供了一种用于非易失性存储器的磨损均衡方法。非易失性存储器包括多个数据块，每个数据块对应于时间值。数据块根据与其对应的时间值的顺序排列。排列的块形成关键表。确定是否对数据块执行擦除操作。当对数据块执行擦除操作时，根据密钥表中的数据块的时间值的顺序擦除对应的数据块。

52. 发明申请

US20090050927A1 METHOD OF FABRICATION InGaAlN FILM AND LIGHT-EMITTING DEVICE ON A SILICON SUBSTRATE 有权
标题翻译：在硅衬底上制造InGaAlN膜和发光器件的方法
公开(公告)号：US20090050927A1
公开(公告)日：2009-02-26
申请号：US11910735
申请日：2006-04-14
申请人： Fengyi Jiang , Wenqing Fang , Li Wang , Chunlan Mo , Hechu Liu , Maoxing Zhou
发明人： Fengyi Jiang , Wenqing Fang , Li Wang , Chunlan Mo , Hechu Liu , Maoxing Zhou
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02658 , H01L21/78 , H01L33/0095
摘要： There is provided a method of fabricating InGaAlN film on a silicon substrate, which comprises the following steps of forming a pattern structured having grooves and mesas on the silicon substrate, and depositing InGaAlN film on the surface of substrate, wherein the depth of the grooves is more than 6 nm, and the InGaAlN film formed on the mesas of both sides of the grooves are disconnected in the horizontal direction. The method may grow high quality, no crack and large area of InGaAlN film by simply treating the substrate. At the same time, there is also provided a method of fabricating InGaAlN light-emitting device by using the silicon substrate.
摘要翻译：提供了一种在硅衬底上制造InGaAlN膜的方法，其包括以下步骤：在硅衬底上形成具有凹槽和台面的图案，并在衬底表面上沉积InGaAlN膜，其中凹槽的深度为大于6nm，并且形成在槽的两侧的台面上的InGaAlN膜在水平方向上断开。该方法可以通过简单地处理基板来生长高质量，无裂纹和大面积的InGaAlN膜。同时，还提供了通过使用硅衬底制造InGaAlN发光器件的方法。

53. 发明授权

US07480921B1 Method, system, and apparatus for customizing web parts 有权
标题翻译：用于定制Web部件的方法，系统和设备
公开(公告)号：US07480921B1
公开(公告)日：2009-01-20
申请号：US10675173
申请日：2003-09-30
申请人： Eric B. Vigesaa , Joshua Lindquist , Daniel Simmons , Li Wang
发明人： Eric B. Vigesaa , Joshua Lindquist , Daniel Simmons , Li Wang
IPC分类号： G06F13/00
CPC分类号： G06F17/3089
摘要： A method, system, and apparatus for customizing web part objects. A web part object 28 that is capable of providing a presentation is accessed. Once the web part object is accessed, a specification file 38 associated with the web part object is also accessed. The specification file contains additional code, such as HTML, JAVA Script, or other code. The additional code is applied to a web part to modify the presentation of the web part. Thus, the presentation of the web part is modified in accordance with the specification file to provide a modified presentation.
摘要翻译：用于自定义Web部件对象的方法，系统和设备。访问能够提供呈现的web部件对象28。一旦访问了Web部件对象，也访问与web部件对象相关联的规范文件38。规范文件包含其他代码，如HTML，JAVA Script或其他代码。附加的代码被应用到Web部件以修改Web部件的呈现。因此，根据规范文件修改web部分的呈现以提供修改的呈现。

54. 发明申请

US20080248633A1 Method for Manufacturing Indium Gallium Aluminium Nitride Thin Film on Silicon Substrate 有权
标题翻译：在硅衬底上制造铟镓氮化铝薄膜的方法
公开(公告)号：US20080248633A1
公开(公告)日：2008-10-09
申请号：US12067761
申请日：2006-09-29
申请人： Fengyi Jiang , Li Wang , Wenqing Fang
发明人： Fengyi Jiang , Li Wang , Wenqing Fang
IPC分类号： H01L21/20
CPC分类号： H01L21/02642 , H01L21/02381 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： The method for manufacturing the indium gallium aluminium nitride (InGaAlN) thin film on silicon substrate, which comprises the following steps: introducing magnesium metal for processing online region mask film, that is, or forming one magnesium mask film layer or metal transition layer; then forming one metal transition layer or magnesium mask layer, finally forming one layer of indium gallium aluminium nitride semiconductor layer; or firstly forming one layer of metal transition layer on silicon substrate and then forming the first indium gallium aluminium nitride semiconductor layer, magnesium mask layer and second indium gallium aluminium nitride semiconductor layer in this order. This invention can reduce the dislocation density of indium gallium aluminium nitride materials and improve crystal quality.
摘要翻译：在硅衬底上制造铟镓铝（InGaAlN）薄膜的方法，包括以下步骤：引入用于在线区域掩模膜的加工的镁金属，即形成一个镁掩模膜层或金属过渡层; 然后形成一个金属过渡层或镁掩模层，最后形成一层铟镓铝半导体层; 或者首先在硅衬底上形成一层金属过渡层，然后依次形成第一铟镓铝氮化物半导体层，镁掩模层和第二铟镓铝氮化物半导体层。本发明可以降低铟镓铝材料的位错密度，提高晶体质量。

55. 发明申请

US20080230792A1 Semiconductor Light-Emitting Device with Electrode for N-Polar Ingaain Surface 有权
标题翻译：具有用于N极极大表面的电极的半导体发光器件
公开(公告)号：US20080230792A1
公开(公告)日：2008-09-25
申请号：US12063978
申请日：2006-09-30
申请人： Fengyi Jiang , Li Wang , Wenqing Fang
发明人： Fengyi Jiang , Li Wang , Wenqing Fang
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/0079 , H01L33/145 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive path to the upper cladding layer; and a lower ohmic-contact layer forming a conductive path the lower cladding layer. The lower ohmic-contact layer has a shape substantially different from the shape of the upper ohmic-contact layer, thereby diverting a carrier flow away from a portion of the active layer which is substantially below the upper ohmic-contact layer when a voltage is applied to the upper and lower ohmic-contact layers.
摘要翻译：本发明的一个实施例提供了一种半导体发光器件，其包括：上包层; 下包层; 在上和下包层之间的有源层; 形成到上包层的导电路径的上欧姆接触层; 以及形成下部包层的导电路径的下欧姆接触层。下欧姆接触层具有与上欧姆接触层的形状基本上不同的形状，从而当施加电压时，载流子转移离开有源层的基本上在上欧姆接触层下方的部分到上，下欧姆接触层。

56. 发明申请

US20080166582A1 Method for fabricating metal substrates with high-quality surfaces 有权
标题翻译：用于制造具有高质量表面的金属基材的方法
公开(公告)号：US20080166582A1
公开(公告)日：2008-07-10
申请号：US11713423
申请日：2007-03-02
申请人： Chuanbing Xiong , Wenqing Fang , Li Wang , Guping Wang , Fengyi Jiang
发明人： Chuanbing Xiong , Wenqing Fang , Li Wang , Guping Wang , Fengyi Jiang
IPC分类号： H01L29/12 , H01L21/02 , H01L21/311
CPC分类号： C23C14/541 , C23C14/0005 , C23C14/18 , C23C14/505 , Y10S117/917 , Y10T428/12382 , Y10T428/12528
摘要： One embodiment of the present invention provides a method for fabricating a high-quality metal substrate. During operation, the method involves cleaning a polished single-crystal substrate. A metal structure of a predetermined thickness is then formed on a polished surface of the single-crystal substrate. The method further involves removing the single-crystal substrate from the metal structure without damaging the metal structure to obtain the high-quality metal substrate, wherein one surface of the metal substrate is a high-quality metal surface which preserves the smoothness and flatness of the polished surface of the single-crystal substrate.
摘要翻译：本发明的一个实施例提供了制造高品质金属基板的方法。在操作过程中，该方法包括清洗抛光的单晶衬底。然后在单晶衬底的抛光表面上形成预定厚度的金属结构。该方法还包括从金属结构中去除单晶衬底而不损坏金属结构以获得高质量的金属衬底，其中金属衬底的一个表面是高质量的金属表面，其保持了平滑度和平坦度抛光表面的单晶基板。

57. 发明申请

US20080082434A1 System and Method for Making Payment 审中-公开
标题翻译：制度和付款方式
公开(公告)号：US20080082434A1
公开(公告)日：2008-04-03
申请号：US11864676
申请日：2007-09-28
申请人： Zhilong Qian , Li Wang
发明人： Zhilong Qian , Li Wang
IPC分类号： G06Q40/00
CPC分类号： G06Q20/04 , G06Q20/02 , G06Q20/023 , G06Q20/102 , G06Q30/04
摘要： A payment system includes a central account registration system to bind multiple payment platforms into an account federation to accomplish convenient and secure cross-platform payment. The central account registration system assigns a federation user ID to each federation user and stores mapping information between the user's federation user ID and the user's account in its payment platform. Upon receiving an operation request of a first user from a first payment platform, the central account registration system provides the account information of a second payment platform to the first payment platform according to a federation user ID of a second user. Payment system is then able to make a cross-platform payment between the first payment platform and the second payment platform based on the account information provided by the central account registration system. A method of making payment using the payment system is also disclosed.
摘要翻译：支付系统包括一个中央账户注册系统，用于将多个支付平台绑定到一个帐户联盟中，以实现方便和安全的跨平台支付。中央帐号注册系统为每个联盟用户分配联盟用户ID，并在其支付平台中存储用户的联合用户ID和用户账户之间的映射信息。在从第一支付平台接收到第一用户的操作请求时，中央帐号注册系统根据第二用户的联合用户ID向第一支付平台提供第二支付平台的帐户信息。然后，支付系统能够基于中央账户登记系统提供的账户信息，在第一支付平台和第二支付平台之间进行跨平台支付。还公开了使用支付系统进行支付的方法。

58. 发明申请

US20080011649A1 Hydrocracking Catalyst Containing Beta and Y Zeolites, and Process for its use to make Distillate 审中-公开
标题翻译：含有β和Y沸石的加氢裂化催化剂及其制备馏出物的方法
公开(公告)号：US20080011649A1
公开(公告)日：2008-01-17
申请号：US11457828
申请日：2006-07-17
申请人： Li Wang
发明人： Li Wang
IPC分类号： C10G45/04 , C10G45/00
CPC分类号： C10G47/16 , B01J23/28 , B01J23/30 , B01J23/75 , B01J23/755 , B01J23/85 , B01J29/084 , B01J29/7007 , B01J29/80 , B01J37/0201 , C10G47/20
摘要： Increased selectivity of middle distillate and/or increased catalyst activity are obtained in a hydrocracking process by the use of a catalyst containing a beta zeolite and a Y zeolite having a unit cell size of 24.33 to 24.38 angstrom. The catalyst may also contain an additional Y zeolite having a unit cell size of from 24.25 to 24.32 angstrom.
摘要翻译：通过使用含有β沸石的催化剂和具有24.33至24.38埃的晶胞尺寸的Y沸石，在加氢裂化过程中获得了中间馏分的选择性提高和/或增加的催化剂活性。该催化剂还可以含有一个额外的Y沸石，其单元尺寸为24.25至24.32埃。

59. 发明申请

US20080011648A1 Hydrocracking Catalyst Containing Beta and Y Zeolites, and Process for its use to make Distillate 审中-公开
标题翻译：含有β和Y沸石的加氢裂化催化剂及其制备馏出物的方法
公开(公告)号：US20080011648A1
公开(公告)日：2008-01-17
申请号：US11457833
申请日：2006-07-17
申请人： Li Wang
发明人： Li Wang
IPC分类号： C10G45/04
CPC分类号： C10G47/16 , B01J23/28 , B01J23/30 , B01J23/75 , B01J23/755 , B01J29/084 , B01J29/7007 , B01J29/80 , B01J35/1071 , C10G47/20
摘要： Increased selectivity of middle distillate and increased catalyst activity are obtained in a hydrocracking process by the use of a catalyst containing a hydrogenation component, a beta zeolite having an overall silica to alumina mole ratio of less than 30 and a SF6 adsorption capacity of at least 28 wt-%, a Y zeolite having a unit cell size of from 24.25 to 24.32 angstrom, and a support.
摘要翻译：在加氢裂化过程中，通过使用含有氢化组分的催化剂，总二氧化硅/氧化铝摩尔比小于30的β沸石和SF 6以上的催化剂活性可以提高中间馏分的选择性和增加的催化剂活性， SUB>至少28重量％的吸附容量，具有24.25至24.32埃的晶胞尺寸的Y沸石和载体。

60. 发明申请

US20080004257A1 Kinase inhibitors 有权
标题翻译：激酶抑制剂
公开(公告)号：US20080004257A1
公开(公告)日：2008-01-03
申请号：US11338501
申请日：2006-01-24
申请人： Tin-Yau Chan , Thierry Fischmann , Mark McCoy , Brian McKittrick , Andrew Prongay , Haiyan Pu , Li Wang , Li Xiao
发明人： Tin-Yau Chan , Thierry Fischmann , Mark McCoy , Brian McKittrick , Andrew Prongay , Haiyan Pu , Li Wang , Li Xiao
IPC分类号： A61K31/53 , A61K31/551 , A61P25/00 , A61P3/00 , A61P35/00 , A61P37/00 , A61P5/00 , A61P9/00 , C07D403/14
CPC分类号： C07D403/04
摘要： A compound having the general structure of Formula (I): or a pharmaceutically acceptable salt, solvate, or ester thereof, are useful in treating diseases, disorders, or conditions such as immunodeficiencies, cancers, cardiovascular diseases, endocrine disorders, Parkinson's disease, metabolic diseases, tumorigenesis, Alzheimer's disease, heart disease, diabetes, neurodegeneration, inflammation, kidney disease, atherosclerosis and airway disease.
摘要翻译：具有式（I）的通式结构的化合物或其药学上可接受的盐，溶剂化物或酯可用于治疗疾病，病症或病症，例如免疫缺陷，癌症，心血管疾病，内分泌紊乱，帕金森病，代谢疾病，肿瘤发生，阿尔茨海默病，心脏病，糖尿病，神经变性，炎症，肾脏疾病，动脉粥样硬化和气道疾病。

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