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51. 发明申请

US20090032831A1 Optical waveguide apparatus and method for manufacturing the same 有权
标题翻译：光波导装置及其制造方法
公开(公告)号：US20090032831A1
公开(公告)日：2009-02-05
申请号：US12076617
申请日：2008-03-20
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Makoto Kawai
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Makoto Kawai
IPC分类号： H01L33/00
CPC分类号： G02B6/132 , G02B6/1347 , G02F1/0126 , G02F1/025 , G02F2202/105 , G02F2203/48 , Y10S438/967
摘要： An optical waveguide apparatus having a very simple structure that can modulate a signal light guided through an optical waveguide is provided. A photoresist 13 is applied to an upper side of an SOI film 12, a photoresist mask 14 is formed, and the SOI film in a region that is not covered with the photoresist mask 14 is removed by etching to obtain an optical waveguide 15 having a single-crystal silicon core. Further, a light emitting device capable of irradiating the single-crystal silicon core with a light having a wavelength of 1.1 μm or below is provided on a back surface side of a quartz substrate 20 to provide an optical waveguide apparatus. When the light emitting device 30 does not apply a light, the light guided through the optical waveguide 15 is guided as it is. However, when the light emitting device 30 applies a light to form each pair of an electron and a hole in the irradiated region 16, the light guided through the optical waveguide 15 is absorbed by the pair of an electron and a hole, thereby enabling switching (modulation) for turning ON/OFF an optical signal depending on presence/absence (ON or OFF) of application of the light from the light emitting device 30.
摘要翻译：提供一种具有可以调制通过光波导引导的信号光的非常简单结构的光波导装置。将光致抗蚀剂13施加到SOI膜12的上侧，形成光致抗蚀剂掩模14，并且通过蚀刻除去未被光致抗蚀剂掩模14覆盖的区域中的SOI膜，以获得具有单晶硅芯。此外，在石英基板20的背面侧设置能够用波长为1.1μm以下的光照射单晶硅芯的发光装置，以提供光波导装置。当发光器件30不施加光时，通过光波导15引导的光被原样引导。然而，当发光器件30在照射区域16中施加光以形成每对电子和空穴时，通过光波导15引导的光被一对电子和空穴吸收，从而能够切换（调制），用于根据来自发光装置30的光的施加的存在/不存在（ON或OFF）来接通/关闭光信号。

52. 发明申请

US20080254597A1 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20080254597A1
公开(公告)日：2008-10-16
申请号：US12076923
申请日：2008-03-25
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/30
CPC分类号： H01L21/76256 , H01L27/12
摘要： A method for manufacturing an SOI substrate superior in film thickness uniformity and resistivity uniformity in a substrate surface of a silicon layer having a film thickness reduced by an etch-back method is provided. After B ions is implanted into a front surface of a single-crystal Si substrate 10 to form a high-concentration boron added p layer 11 having a depth L in the outermost front surface, the single-crystal Si substrate 10 is appressed against a quartz substrate 20 to be bonded at a room temperature. Chemical etching is performed with respect to the single-crystal Si substrate 10 from a back surface thereof to set its thickness to L or below. A heat treatment is carried out with respect to an SOI substrate in a hydrogen containing atmosphere to outwardly diffuse B from the high-concentration boron added p layer 11, thereby acquiring a boron added p layer 12 having a desired resistance value. During this heat treatment, B in an Si crystal is diffused to the outside of the crystal in a state where it is coupled with hydrogen in the atmosphere, and a B concentration in the high-concentration boron added p layer 11 is reduced. In regard to a heat treatment temperature at this time, in view of a softening point of the insulative substrate, an upper limit of the heat treatment temperature is set to 1250° C., and 700° C. is selected as a lower limit of the temperature at which B can be diffused.
摘要翻译：提供一种制造SOI衬底的方法，该SOI衬底具有通过蚀刻方法减小的膜厚度的硅层的衬底表面中的膜厚度均匀性和电阻率均匀性优异的SOI衬底。在将B离子注入到单晶Si衬底10的前表面中以形成在最外表面具有深度L的高浓度硼添加p层11之后，将单晶Si衬底10贴在石英基板20在室温下结合。从其背面对单晶硅基板10进行化学蚀刻，将其厚度设定为L以下。对含氢气氛中的SOI衬底进行热处理，从高浓度硼添加p层11向外扩散B，从而获得具有所需电阻值的添加硼的p层12。在该热处理中，Si结晶中的B在与大气中的氢相结合的状态下扩散到晶体外部，并且在高浓度硼添加p层11中的B浓度降低。就此时的热处理温度而言，考虑到绝缘基板的软化点，将热处理温度的上限设定为1250℃，选择700℃为下限值 B可以扩散的温度。

53. 发明授权

US08106290B2 Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08106290B2
公开(公告)日：2012-01-31
申请号：US12073437
申请日：2008-03-05
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/056 , H01L21/76254 , H01L31/03921 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a single crystal silicon solar cell includes implanting either hydrogen ions or rare-gas ions into a single crystal silicon substrate; bringing the single crystal silicon substrate in close contact with a transparent insulator substrate via a transparent adhesive, with the ion-implanted surface being a bonding surface; curing the transparent adhesive; mechanically delaminating the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type in the delaminated surface side of the single crystal silicon layer, and causing a plurality of areas of a first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of individual electrodes on each one of the plurality of areas of the first conductivity type and on each one of the plurality of areas of the second conductivity type; forming a collector electrode for the plurality of individual electrodes on the plurality of areas of the first conductivity type, and a collector electrode for the plurality of individual electrodes on the plurality of areas of the second conductivity type; and forming a light-reflecting film.
摘要翻译：制造单晶硅太阳能电池的方法包括将氢离子或稀土离子注入到单晶硅衬底中; 使单晶硅衬底通过透明粘合剂与透明绝缘体衬底紧密接触，离子注入表面是接合表面; 固化透明胶; 机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层表面侧形成多个第二导电类型的扩散区域，并且使多个第一导电类型的区域和第二导电类型的多个区域存在于分层的单晶硅层表面; 在第一导电类型的多个区域中的每一个区域和第二导电类型的多个区域中的每一个区域上形成多个单独电极中的每一个; 在所述第一导电类型的多个区域上形成用于所述多个单独电极的集电极，以及在所述第二导电类型的多个区域上的所述多个单独电极的集电极; 并形成光反射膜。

54. 发明授权

US08088670B2 Method for manufacturing bonded substrate with sandblast treatment 有权
标题翻译：喷砂处理方法
公开(公告)号：US08088670B2
公开(公告)日：2012-01-03
申请号：US12081297
申请日：2008-04-14
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/304 , H01L21/30 , H01L27/12 , H01L21/18
CPC分类号： H01L21/76254 , H01L21/3046 , H01L21/6835 , H01L27/1214 , H01L27/1266 , H01L2221/68359
摘要： When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (corresponding to a back surface of the insulator substrate) and additionally whose front surface can be easily identified like a process of a silicon semiconductor wafer in case of the bonded substrate using a transparent insulator substrate as a handle wafer. There is provided a method for manufacturing a bonded substrate in which an insulator substrate is used as a handle wafer and a donor wafer is bonded to a front surface of the insulator substrate, the method comprises at least that a sandblast treatment is performed with respect to a back surface of the insulator substrate.
摘要翻译：当制造使用绝缘体基板作为处理晶片的键合衬底时，提供了一种用于制造键合衬底的方法，其可以在承载和安装之后通过粗糙化粘合衬底的背面（对应于绝缘体基板），另外，在使用透明绝缘体基板作为处理晶片的键合衬底的情况下，可以容易地识别其表面像硅半导体晶片的工艺。提供了一种用于制造键合衬底的方法，其中使用绝缘体衬底作为把手晶片，并且施主晶片结合到绝缘体衬底的前表面，该方法至少包括相对于绝缘体基板的背面。

55. 发明申请

US20090007960A1 Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US20090007960A1
公开(公告)日：2009-01-08
申请号：US12073437
申请日：2008-03-05
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/00 , B32B37/12 , H01L21/02
CPC分类号： H01L31/056 , H01L21/76254 , H01L31/03921 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a single crystal silicon solar cell includes the steps of implanting either hydrogen ions or rare-gas ions into a single crystal silicon substrate; bringing the single crystal silicon substrate in close contact with a transparent insulator substrate via a transparent adhesive, with the ion-implanted surface being a bonding surface; curing the transparent adhesive; mechanically delaminating the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type in the delaminated surface side of the single crystal silicon layer, and causing a plurality of areas of a first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of individual electrodes on each one of the plurality of areas of the first conductivity type and on each one of the plurality of areas of the second conductivity type in the single crystal silicon layer; forming a collector electrode for the plurality of individual electrodes on the plurality of areas of the first conductivity type, and a collector electrode for the plurality of individual electrodes on the plurality of areas of the second conductivity type; and forming a light-reflecting film.
摘要翻译：制造单晶硅太阳能电池的方法包括将氢离子或稀土离子注入到单晶硅衬底中的步骤; 使单晶硅衬底通过透明粘合剂与透明绝缘体衬底紧密接触，离子注入表面是接合表面; 固化透明胶; 机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层表面侧形成多个第二导电类型的扩散区域，并且使多个第一导电类型的区域和第二导电类型的多个区域存在于分层的单晶硅层表面; 在单晶硅层中形成第一导电类型的多个区域中的每一个区域和第二导电类型的多个区域中的每一个上的多个单独电极中的每一个; 在所述第一导电类型的多个区域上形成用于所述多个单独电极的集电极，以及在所述第二导电类型的多个区域上的所述多个单独电极的集电极; 并形成光反射膜。

56. 发明申请

US20080261381A1 Method for manufacturing bonded substrate 有权
标题翻译：粘合基材的制造方法
公开(公告)号：US20080261381A1
公开(公告)日：2008-10-23
申请号：US12081297
申请日：2008-04-14
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/86
CPC分类号： H01L21/76254 , H01L21/3046 , H01L21/6835 , H01L27/1214 , H01L27/1266 , H01L2221/68359
摘要： When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (corresponding to a back surface of the insulator substrate) and additionally whose front surface can be easily identified like a process of a silicon semiconductor wafer in case of the bonded substrate using a transparent insulator substrate as a handle wafer.There is provided a method for manufacturing a bonded substrate in which an insulator substrate is used as a handle wafer and a donor wafer is bonded to a front surface of the insulator substrate, the method comprises at least that a sandblast treatment is performed with respect to a back surface of the insulator substrate.
摘要翻译：当制造使用绝缘体基板作为处理晶片的键合衬底时，提供了一种用于制造键合衬底的方法，其可以在承载和安装之后通过粗糙化粘合衬底的背面（对应于绝缘体基板），另外，在使用透明绝缘体基板作为处理晶片的键合衬底的情况下，可以容易地识别其表面像硅半导体晶片的工艺。提供了一种用于制造键合衬底的方法，其中使用绝缘体衬底作为把手晶片，并且施主晶片结合到绝缘体衬底的前表面，该方法至少包括相对于绝缘体基板的背面。

57. 发明授权

US07799589B2 Optical waveguide apparatus and method for manufacturing the same 有权
标题翻译：光波导装置及其制造方法
公开(公告)号：US07799589B2
公开(公告)日：2010-09-21
申请号：US12076617
申请日：2008-03-20
申请人： Shoji Akiyama , Yoshihiro Kuboto , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Makoto Kawai
发明人： Shoji Akiyama , Yoshihiro Kuboto , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Makoto Kawai
IPC分类号： H01L21/00
CPC分类号： G02B6/132 , G02B6/1347 , G02F1/0126 , G02F1/025 , G02F2202/105 , G02F2203/48 , Y10S438/967
摘要： An optical waveguide apparatus having a very simple structure that can modulate a signal light guided through an optical waveguide is provided. A photoresist 13 is applied to an upper side of an SOI film 12, a photoresist mask 14 is formed, and the SOI film in a region that is not covered with the photoresist mask 14 is removed by etching to obtain an optical waveguide 15 having a single-crystal silicon core. Further, a light emitting device capable of irradiating the single-crystal silicon core with a light having a wavelength of 1.1 μm or below is provided on a back surface side of a quartz substrate 20 to provide an optical waveguide apparatus. When the light emitting device 30 does not apply a light, the light guided through the optical waveguide 15 is guided as it is. However, when the light emitting device 30 applies a light to form each pair of an electron and a hole in the irradiated region 16, the light guided through the optical waveguide 15 is absorbed by the pair of an electron and a hole, thereby enabling switching (modulation) for turning ON/OFF an optical signal depending on presence/absence (ON or OFF) of application of the light from the light emitting device 30.
摘要翻译：提供一种具有可以调制通过光波导引导的信号光的非常简单结构的光波导装置。将光致抗蚀剂13施加到SOI膜12的上侧，形成光致抗蚀剂掩模14，并且通过蚀刻除去未被光致抗蚀剂掩模14覆盖的区域中的SOI膜，以获得具有单晶硅芯。此外，在石英基板20的背面侧设置能够用波长为1.1μm以下的光照射单晶硅芯的发光装置，以提供光波导装置。当发光器件30不施加光时，通过光波导15引导的光被原样引导。然而，当发光器件30在照射区域16中施加光以形成每对电子和空穴时，通过光波导15引导的光被一对电子和空穴吸收，从而能够切换（调制），用于根据来自发光装置30的光的施加的存在/不存在（ON或OFF）来接通/关闭光信号。

58. 发明授权

US08551862B2 Method of manufacturing laminated wafer by high temperature laminating method 有权
标题翻译：通过高温层压法制造层压晶片的方法
公开(公告)号：US08551862B2
公开(公告)日：2013-10-08
申请号：US12685194
申请日：2010-01-11
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
IPC分类号： H01L21/30
CPC分类号： H01L21/84 , H01L21/76254 , H01L21/76256
摘要： To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer 7 by forming a silicon film layer on a surface 4 of an insulating substrate 3 comprising the steps in the following order of: applying a surface activation treatment to both a surface 2 of a silicon wafer 1 or a silicon wafer 1 to which an oxide film is layered and a surface 4 of the insulating substrate 3 followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer 5 at a temperature of 200° C. to 350° C., and thinning the silicon wafer 1 by a combination of grinding, etching and polishing to form a silicon film layer.
摘要翻译：为了提供一种制造层叠晶片的方法，在不降低最大热处理温度的情况下，不会降低最大热处理温度以及晶片的裂纹或芯片不会在不具有热膨胀系数差的不同材料制成的晶片之间实现强耦合，发生。一种通过在绝缘基板3的表面4上形成硅膜层来制造层压晶片7的方法，包括以下顺序的步骤：对硅晶片1或硅的表面2施加表面活化处理叠层氧化膜的晶片1和绝缘基板3的表面4，然后在温度超过50℃且低于300℃的气氛中层压，在层叠晶片5上进行热处理温度为200〜350℃，通过研磨，蚀刻和研磨的组合使硅晶片1变薄，形成硅膜层。

59. 发明授权

US08138064B2 Method for producing silicon film-transferred insulator wafer 有权
标题翻译：生产硅膜转移绝缘体晶圆的方法
公开(公告)号：US08138064B2
公开(公告)日：2012-03-20
申请号：US12922569
申请日：2009-10-29
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Kouichi Tanaka , Yuji Tobisaka , Yoshihiro Nojima
IPC分类号： H01L21/304
CPC分类号： H01L21/76254 , H01L21/76256
摘要： A method for producing a silicon film-transferred insulator wafer is disclosed. The method includes a surface activation step of performing a surface activation treatment on at least one of a surface of an insulator wafer and a hydrogen ion-implanted surface of a single crystal silicon wafer into which a hydrogen ion has been implanted to form a hydrogen ion-implanted layer; a bonding step that bonds the hydrogen ion-implanted surface to the surface of the insulator wafer to obtain bonded wafers; a first heating step that heats the bonded wafers; a grinding and/or etching step of grinding and/or etching a surface of a single crystal silicon wafer side of the bonded wafers; a second heating step that heats the bonded wafers; and a detachment step to detach the hydrogen ion-implanted layer by applying a mechanical impact to the hydrogen ion-implanted layer of the bonded wafers thus heated at the second temperature.
摘要翻译：公开了一种用于制造硅膜转移绝缘体晶片的方法。该方法包括对绝缘体晶片的表面和注入氢离子形成氢离子的单晶硅晶片的氢离子注入表面中的至少一个进行表面活化处理的表面活化步骤植皮层键合步骤，将氢离子注入表面结合到绝缘体晶片的表面以获得接合的晶片; 加热接合晶片的第一加热步骤; 研磨和/或蚀刻步骤，研磨和/或蚀刻接合晶片的单晶硅晶片侧的表面; 第二加热步骤，加热粘合的晶片; 以及通过对在第二温度下加热的接合晶片的氢离子注入层施加机械冲击来分离氢离子注入层的分离步骤。

60. 发明申请

US20110014776A1 METHOD FOR PRODUCING SOI SUBSTRATE 有权
标题翻译：生产SOI衬底的方法
公开(公告)号：US20110014776A1
公开(公告)日：2011-01-20
申请号：US12933113
申请日：2009-04-01
申请人： Shoji Akiyama , Makoto Kawai , Atsuo Ito , Yoshihiro Kubota , Kouichi Tanaka , Yuji Tobisaka , Hiroshi Tamura
发明人： Shoji Akiyama , Makoto Kawai , Atsuo Ito , Yoshihiro Kubota , Kouichi Tanaka , Yuji Tobisaka , Hiroshi Tamura
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L27/12
摘要： A method for easily manufacturing a transparent SOI substrate having: a main surface with a silicon film formed thereon; and a rough main surface located on a side opposite to a side where the silicon film is formed. A method for manufacturing transparent SOI substrate, having a silicon film formed on a first main surface of the transparent insulating substrate, while a second main surface of the transparent insulating substrate, an opposite to the first main surface, is roughened. The method includes at least the steps of: roughening the first main surface with an RMS surface roughness lower than 0.7 nm and the second main surface with an RMS surface roughness higher than the surface roughness of the first main surface to prepare the transparent insulating substrate; and forming the silicon film on the first main surface of the transparent insulating substrate.
摘要翻译：一种容易制造透明SOI衬底的方法，其具有：形成有硅膜的主表面; 以及位于与形成硅膜的一侧相反一侧的粗糙主表面。制造透明SOI衬底的方法，其中在透明绝缘衬底的第一主表面上形成硅膜，同时透明绝缘衬底的与第一主表面相反的第二主表面被粗糙化。该方法至少包括以下步骤：使RMS表面粗糙度低于0.7nm的第一主表面粗糙化，并且第二主表面的RMS表面粗糙度高于第一主表面的表面粗糙度，以制备透明绝缘基板; 以及在所述透明绝缘基板的所述第一主表面上形成所述硅膜。

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