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51. 发明授权

US07186393B2 Complex oxide, and production process therefor and applications thereof 失效
标题翻译：复合氧化物及其制备方法及其应用
公开(公告)号：US07186393B2
公开(公告)日：2007-03-06
申请号：US10717483
申请日：2003-11-21
申请人： Hisao Kogoi , Jun Tanaka , Hiroyuki Hagihara
发明人： Hisao Kogoi , Jun Tanaka , Hiroyuki Hagihara
IPC分类号： C01G9/02
CPC分类号： A61K8/25 , A61K8/0287 , A61K8/27 , A61Q1/02 , A61Q1/12 , A61Q17/04 , C01G9/00 , C01G9/03 , C01P2002/72 , C01P2002/74 , C01P2004/04 , C01P2006/12 , C09C1/04 , C09C1/043
摘要： The present invention relates to a complex oxide having a BET specific surface area of about 10 to about 200 m2/g, comprising zinc oxide as a primary component, containing crystalline structures of both zinc oxide and silica, and exhibiting diffraction peaks in lattice planes (100), (002), and (101), which are X-ray crystallographically specific to diffraction peaks of crystalline zinc oxide, and in a lattice plane (101) which is X-ray crystallographically specific to the diffraction peak of crystalline silica.
摘要翻译：本发明涉及包含氧化锌作为主要成分的氧化锌和二氧化硅的结晶结构的BET比表面积为约10至约200m 2 / g的复合氧化物，并且在晶体平面（100），（002）和（101）中显示衍射峰，它们是结晶氧化锌的衍射峰的晶体学特异性的X射线，以及在作为X射线晶体学特异性的晶格平面（101）到结晶二氧化硅的衍射峰。

52. 发明授权

US07067105B2 Alumina particles, production process thereof, composition comprising the particles and alumina slurry for polishing 失效
标题翻译：氧化铝颗粒，其制备方法，包含颗粒的组合物和用于抛光的氧化铝浆料
公开(公告)号：US07067105B2
公开(公告)日：2006-06-27
申请号：US10179268
申请日：2002-06-26
申请人： Hisao Kogoi , Jun Tanaka , Hayato Yamaya
发明人： Hisao Kogoi , Jun Tanaka , Hayato Yamaya
IPC分类号： C01F7/00
CPC分类号： B82Y30/00 , C01F7/02 , C01F7/302 , C01F7/306 , C01P2002/02 , C01P2002/60 , C01P2004/50 , C01P2004/51 , C01P2004/62 , C01P2004/64 , C01P2006/90 , C09K3/1409 , C09K3/1436 , C09K3/1463
摘要： A process for producing alumina particles, comprising vaporizing aluminum chloride to form an aluminum chloride vaporized gas, which optionally contains an inert gas, and oxidizing the vaporized aluminum chloride with an oxidizing gas to produce alumina particles, wherein the aluminum chloride vaporized gas and the oxidizing gas are introduced into a reactor each at an ejecting flow velocity of about 10 m/sec or more, the ratio of the flow velocity of oxidizing gas to the flow velocity of the aluminum chloride vaporized gas is approximately from 0.2 to less than 10, and the amount of oxidizing gas is about 1 or more times the amount of oxidizing gas necessary for stoichiometrically oxidizing aluminum chloride.
摘要翻译：一种生产氧化铝颗粒的方法，包括将氯化铝蒸发以形成氯化铝汽化气体，其任选地含有惰性气体，并用氧化气体氧化蒸发的氯化铝以产生氧化铝颗粒，其中氯化铝气化气体和氧化气体以约10m / sec以上的喷射流速引入反应器，氧化气体的流速与氯化铝气化气体的流速的比率约为0.2〜小于10，氧化气体的量为化学计量氧化氯化铝所需的氧化气体量的约1倍以上。

53. 发明申请

US20060074173A1 High purity titanium oxide and production process thereof 审中-公开
标题翻译：高纯度氧化钛及其制备方法
公开(公告)号：US20060074173A1
公开(公告)日：2006-04-06
申请号：US10507776
申请日：2003-03-20
申请人： Hisao Kogoi , Jun Tanaka
发明人： Hisao Kogoi , Jun Tanaka
IPC分类号： C01G23/047 , C08K3/22
CPC分类号： B82Y30/00 , A61K8/29 , A61K2800/412 , A61K2800/43 , A61Q19/00 , C01G23/0475 , C01G23/07 , C01P2004/32 , C01P2004/61 , C01P2004/62 , C01P2006/10 , C01P2006/12 , C01P2006/80 , C04B2235/3232 , C04B2235/528 , C04B2235/5296 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/549 , C04B2235/72 , C04B2235/724 , C04B2235/726 , C08K3/22 , C08K7/18 , C08K2003/2241 , C09C1/3607 , C09C1/3615 , C09C1/363 , C09C1/3676 , C09C1/3684 , C09D7/61 , C09D7/69 , C09D17/008
摘要： A titanium dioxide characterized by having an average particle size of 5 to 200 μm as measured through laser particle size analysis; having a purity of at least 99.5 mass % as reduced to TiO2; and having an Fe content of 20 mass ppm or less, an Ni content of 20 mass ppm or less, a Cr content of 20 mass ppm or less, an Al content of 20 mass ppm or less, a Zr content of 20 mass ppm or less, an Si content of 40 mass ppm or less, a Cl content of 0.05 mass % or less, and an S content of 50 mass ppm or less. The titanium dioxide is produced by a process comprising bringing titanium dioxide serving as a raw material into a high-temperature flame formed by use of a combustible gas and a combustion-supporting gas, to thereby yield spherical titanium dioxide, characterized in that said raw material titanium dioxide has been produced through a vapor-phase process in which titanium tetrachloride is oxidized with an oxidative gas at high temperature.
摘要翻译：二氧化钛，其特征在于通过激光粒径分析测定的平均粒度为5〜200μm; 纯度至少为99.5质量％，还原为TiO 2; 并且具有20质量ppm以下的Fe含量，20质量ppm以下的Ni含量，20质量ppm以下的Cr含量，20质量ppm以下的Al含量，20质量ppm的Zr含量或 Si含量为40质量ppm以下，Cl含量为0.05质量％以下，S含量为50质量ppm以下。二氧化钛是通过将二氧化钛作为原料进入由可燃性气体和助燃气体形成的高温火焰的方法制造的，从而得到球形二氧化钛，其特征在于，所述原料通过气相法制备了二氧化钛，其中四氯化钛在高温下被氧化气体氧化。

54. 发明申请

US20050093161A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050093161A1
公开(公告)日：2005-05-05
申请号：US11000442
申请日：2004-12-01
申请人： Jun Tanaka , Miharu Otani , Kiyoshi Ogata , Yasumichi Suzuki , Katsuhiko Hotta
发明人： Jun Tanaka , Miharu Otani , Kiyoshi Ogata , Yasumichi Suzuki , Katsuhiko Hotta
IPC分类号： H01L21/3205 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/31 , H01L23/48 , H01L23/52 , H01L23/525 , H01L23/532 , H01L23/58 , H01L31/0328
CPC分类号： H01L21/76835 , H01L21/3148 , H01L21/31612 , H01L21/31629 , H01L21/31633 , H01L21/318 , H01L21/76801 , H01L21/7681 , H01L23/3114 , H01L23/3171 , H01L23/5222 , H01L23/525 , H01L23/53228 , H01L23/53238 , H01L23/53295 , H01L23/564 , H01L23/585 , H01L24/45 , H01L24/48 , H01L2224/05569 , H01L2224/05572 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48799 , H01L2924/00014 , H01L2924/0002 , H01L2924/01015 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2224/05552 , H01L2224/05599 , H01L2924/00012
摘要： As etch-stop films or Cu-diffusion barrier films used in insulation films constituting conductor layers of a stacked structure, films having smaller dielectric constant than silicon nitride films are used, and an insulation film at a lower-layer part of the stacked structure is made to have smaller dielectric constant than that at an upper-layer part thereof, and further this insulation film is a silicon oxide (SiO) film and has, in the interior thereof, nano-pores of from 0.05 nm or more to 4 nm or less in diameter as chief construction. This makes it possible to dramatically reduce effective dielectric constant while keeping the mechanical strength of the conductore layers themselves, and can materialize a highly reliable and high-performance semiconductor device having mitigated the wiring delay of signals which pass through wirings.
摘要翻译：作为构成叠层结构的导体层的绝缘膜中的蚀刻停止膜或Cu扩散阻挡膜，使用介电常数比氮化硅膜低的膜，层叠结构的下层部的绝缘膜为使其具有比其上层部分更小的介电常数，并且此绝缘膜是氧化硅（SiO）膜，并且在其内部具有0.05nm以上至4nm的纳米孔，或者直径较小的主要建筑。这使得可以显着降低有效介电常数同时保持导体层本身的机械强度，并且可以实现高度可靠和高性能的半导体器件，其减轻了通过布线的信号的布线延迟。

55. 发明授权

US06887816B2 Photocatalyst 失效
标题翻译：光催化剂
公开(公告)号：US06887816B2
公开(公告)日：2005-05-03
申请号：US10028420
申请日：2001-12-28
申请人： Jun Tanaka , Masayuki Sanbayashi , Yoshinori Ueyoshi , Hiroyuki Hagihara
发明人： Jun Tanaka , Masayuki Sanbayashi , Yoshinori Ueyoshi , Hiroyuki Hagihara
IPC分类号： B01J21/06 , B01J27/18 , B01J31/06 , B01J31/26 , B01J35/00 , B01J35/06 , B01J37/02 , C01G23/07 , C09C1/36 , B01J21/00
CPC分类号： B01J31/26 , B01J21/063 , B01J21/066 , B01J27/1806 , B01J31/06 , B01J35/002 , B01J35/004 , B01J35/06 , B01J37/0215 , C01G23/07 , C01P2006/12 , C09C1/3661 , Y10S502/517 , Y10T428/265 , Y10T428/31511 , Y10T428/31855
摘要： When a polybasic acid salt containing at least one species selected from the group consisting of an alkaline earth metal, a transition metal, and Al is caused to be present on the surfaces of titanium dioxide fine particles, there are obtained photocatalytic particles and powder exhibiting sufficient photocatalytic properties when irradiated with light from a light source of low quantity of light. By use of the photo-functional particles and powder, an organic polymer composition, a slurry, a coating agent, and a product having a surface exhibiting photocatalytic property and hydrophilicity are obtained.
摘要翻译：当在二氧化钛细颗粒的表面上存在含有选自碱土金属，过渡金属和Al中的至少一种的多元酸盐时，得到的光催化剂颗粒和表现出足够的粉末用低光量光源照射光时的光催化性能。通过使用光功能性粒子和粉末，得到有机聚合物组合物，浆料，涂布剂和具有表现出光催化性能和亲水性的表面产物。

56. 发明申请

US20050004717A1 Thermal management set-temperature correction for individual system 有权
标题翻译：个别系统的热管理设定温度校正
公开(公告)号：US20050004717A1
公开(公告)日：2005-01-06
申请号：US10863684
申请日：2004-06-08
申请人： Toshiaki Fukushima , Taichiroh Nomura , Shigeru Ohshita , Jun Tanaka
发明人： Toshiaki Fukushima , Taichiroh Nomura , Shigeru Ohshita , Jun Tanaka
IPC分类号： G05D23/19 , G06F1/20 , G05D23/00
CPC分类号： G06F1/20 , G05D23/1931 , G06F1/206
摘要： A system includes a CPU, a stor for storing a process executed for lowering the temperature of the CPU in association with a set temperature, a first temperature sensor for measuring a measurement temperature of a measurement position in the CPU, a second temperature sensor for detecting that a detection position in the CPU has reached a detection temperature, an offset calculator for calculating an offset as a difference between the detection temperature and the measurement temperature, a set temperature corrector for calculating a correction value of the set temperature stored by the temperature control information stor based on the offset, and a temperature control executor for executing the temperature control process in association with the set temperature in the case where the measurement temperature has reached the correction value of the set temperature. System specific thermal management data is stored in a nonvolatile memory for retrieval following system initialization.
摘要翻译：一种系统，包括CPU，用于存储与设定温度相关联地降低CPU的温度的处理的存储器，用于测量CPU中的测量位置的测量温度的第一温度传感器，用于检测CPU的测量位置的测量温度的第一温度传感器 CPU中的检测位置已达到检测温度，偏移计算器用于计算检测温度和测量温度之间的差异的偏移量，设定温度校正器，用于计算由温度控制存储的设定温度的校正值基于偏移量的信息存储，以及温度控制执行器，用于在测量温度达到设定温度的校正值的情况下，与设定温度相关联地执行温度控制处理。系统特定的热管理数据存储在非易失性存储器中，用于在系统初始化之后进行检索。

57. 发明授权

US06835455B2 Ultrafine particulate complex oxide containing titanium oxide 失效
标题翻译：含有氧化钛的超细颗粒复合氧化物
公开(公告)号：US06835455B2
公开(公告)日：2004-12-28
申请号：US10382646
申请日：2003-03-07
申请人： Jun Tanaka , Shinichiro Tomikawa
发明人： Jun Tanaka , Shinichiro Tomikawa
IPC分类号： C09C136
CPC分类号： B82Y30/00 , C01G23/006 , C01G23/07 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C09C1/3661 , Y10T428/256 , Y10T428/257 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993
摘要： The present invention provides a process for producing ultrafine particulate complex oxide containing titanium oxide, including vapor-phase producing a complex oxide containing titanium oxide having a BET specific surface area of about 5 to about 200 m2/g, where a starting material gas containing titanium tetrachloride and an oxidizing gas are preheated to about 700° C. or more, and are reacted with a solution or a slurry of a salt containing a metallic element. The present invention also provides an ultrafine particulate complex oxide containing titanium oxide obtained by the process, and use of the oxide.
摘要翻译：本发明提供了一种生产含有氧化钛的超细颗粒复合氧化物的方法，包括气相产生含有BET比表面积约5至约200m 2 / g的氧化钛的复合氧化物，其中原料将含有四氯化钛和氧化气体的气体预热至约700℃以上，并与含有金属元素的盐的溶液或浆料反应。本发明还提供了通过该方法获得的含有氧化钛的超细颗粒复合氧化物和氧化物的用途。

58. 发明授权

US06723478B2 Color filter and liquid crystal display provided therewith 有权
标题翻译：滤色器和液晶显示器
公开(公告)号：US06723478B2
公开(公告)日：2004-04-20
申请号：US09964976
申请日：2001-09-26
申请人： Shinji Sekiguchi , Jun Tanaka
发明人： Shinji Sekiguchi , Jun Tanaka
IPC分类号： G02B520
CPC分类号： G02F1/133514 , G02B5/201 , G02F2001/133519
摘要： Disclosed is a color filter which has a flattening layer that functions also as a wavelength converting layer. The wavelength converting layer converts that portion of light incident to the color filter layer which is in the near ultraviolet region into light having a wavelength longer than the blue region. Thus the red, green, and blue filter segments are improved in light transmittance. In this way it is possible to realize a color filter and a liquid crystal display unit having a high light transmittance and good display characteristics.
摘要翻译：公开了一种滤色器，其具有也用作波长转换层的平坦化层。波长转换层将入射到近紫外区域的滤色器层的光的那部分转换成具有比蓝色区域长的波长的光。因此，透光率提高了红，绿和蓝滤光片。以这种方式，可以实现具有高透光率和良好显示特性的滤色器和液晶显示单元。

59. 发明授权

US06718241B2 Vehicle travel control apparatus 有权
标题翻译：车辆行驶控制装置
公开(公告)号：US06718241B2
公开(公告)日：2004-04-06
申请号：US10231135
申请日：2002-08-30
申请人： Satoshi Kondo , Shinnosuke Ishida , Jun Tanaka
发明人： Satoshi Kondo , Shinnosuke Ishida , Jun Tanaka
IPC分类号： B62D600
CPC分类号： B62D15/025 , B60T2201/08 , B60T2201/087
摘要： The invention carries out appropriate travel control so that a vehicle travels along recognized lane markings, and at the same time, prevents making the driver feel discomfort during travel control. In the case that the white line recognition becomes not possible, the delay time TD is shortened depending on a previous continuous time interval of a recognition state. In the case that the white line recognition flag becomes possible, the delay time TD is extended depending on the previous continuous time interval. In the case that the count value of the ON time measuring counter TON is equal to or greater than the delay time TD and the white line recognizing is possible, the compensation control is permitted, and reversion to the ON state of the travel control based on recognized white lines is permitted.
摘要翻译：本发明进行适当的行驶控制，使得车辆沿着识别的车道标记行驶，并且同时防止驾驶员在行驶控制期间感到不适。在白线识别不可能的情况下，延迟时间TD根据识别状态的先前连续时间间隔而缩短。在白线识别标志成为可能的情况下，延迟时间TD根据先前的连续时间间隔而延长。在ON时间测量计数器TON的计数值等于或大于延迟时间TD并且可以进行白线识别的情况下，允许补偿控制，并且基于以下步骤返回到行驶控制的ON状态允许识别白线。

60. 发明授权

US06657245B2 Resin-encapsulated semiconductor apparatus and process for its fabrication 失效
公开(公告)号：US06657245B2
公开(公告)日：2003-12-02
申请号：US10179214
申请日：2002-06-26
申请人： Jun Tanaka , Keiko Isoda , Kiyoshi Ogata
发明人： Jun Tanaka , Keiko Isoda , Kiyoshi Ogata
IPC分类号： H01L2976
CPC分类号： C08L79/08 , H01L23/293 , H01L23/3171 , H01L23/4951 , H01L24/45 , H01L24/48 , H01L31/0203 , H01L2224/32245 , H01L2224/45144 , H01L2224/4826 , H01L2224/73215 , H01L2924/01019 , H01L2924/01039 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/1815 , H01L2924/19041 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： The present invention provides a resin-encapsulated semiconductor apparatus comprising a semiconductor device having a ferroelectric film and a surface-protective film, and an encapsulant member comprising a resin; the surface-protective film being formed of a polyimide. The present invention also provides a process for fabricating a resin-encapsulated semiconductor apparatus, comprising the steps of forming a film of a polyimide precursor composition on the surface of a semiconductor device having a ferroelectric film; heat-curing the polyimide precursor composition film to form a surface-protective film formed of a polyimide; and encapsulating, with an encapsulant resin, the semiconductor device on which the surface-protective film has been formed. The polyimide may preferably have a glass transition temperature of from 240° C. to 400° C. and a Young's modulus of from 2,600 MPa to 6 GPa. The curing may preferably be carried out at a temperature of from 230° C. to 300° C.

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