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51. 发明授权

US08993699B2 Photosensitive resin composition for microlens 有权
标题翻译：用于微透镜的感光树脂组合物
公开(公告)号：US08993699B2
公开(公告)日：2015-03-31
申请号：US13391761
申请日：2010-06-21
申请人： Takahiro Kishioka , Takahiro Sakaguchi
发明人： Takahiro Kishioka , Takahiro Sakaguchi
IPC分类号： G03F7/004 , G02B1/04 , C08F26/06 , G03F7/00 , G03F7/023 , G03F7/40
CPC分类号： C08F26/06 , G02B1/043 , G03F7/0005 , G03F7/0233 , G03F7/40 , C08L33/24
摘要： There is provided a photosensitive resin composition for a microlens. A photosensitive resin composition for a microlens, comprising a component (A), a component (B) and a component (C), wherein the component (A) is a polymer having a maleimide structural unit of Formula (1), the component (B) is a cross-linking agent, and the component (C) is a photosensitizing agent.
摘要翻译：提供了用于微透镜的感光性树脂组合物。包含组分（A），组分（B）和组分（C）的微透镜感光树脂组合物，其中组分（A）是具有式（1）的马来酰亚胺结构单元，组分（ B）是交联剂，组分（C）是光敏剂。

52. 发明授权

US08796349B2 Photosensitive resin composition for microlenses 有权
标题翻译：用于微透镜的光敏树脂组合物
公开(公告)号：US08796349B2
公开(公告)日：2014-08-05
申请号：US13989185
申请日：2011-11-21
申请人： Hiroyuki Soda , Takahiro Sakaguchi , Takahiro Kishioka
发明人： Hiroyuki Soda , Takahiro Sakaguchi , Takahiro Kishioka
IPC分类号： C08G61/12 , C08F2/46 , C08G61/04 , G03F7/023 , G02B1/04 , G03F7/40
CPC分类号： G02B1/041 , G03F7/0005 , G03F7/0233 , G03F7/40 , C08L35/00
摘要： There is provided a photosensitive resin composition for microlenses. A photosensitive resin composition for microlenses including a component (A), a component (B) and a solvent. The component (A): a copolymer having a maleimide structural unit of Formula (1) and a repeating structural unit of Formula (2). The component (B): a photosensitizer (in Formula (2), R0 is a hydrogen atom or a methyl group; R1 is a single bond or a C1-5 alkylene group; R2 is a thermally cross-linkable monovalent organic group; and in the repeating structural unit of Formula (2), R0s are optionally different from each other).
摘要翻译：提供了一种用于微透镜的感光性树脂组合物。用于包含组分（A），组分（B）和溶剂的微透镜的光敏树脂组合物。组分（A）：具有式（1）的马来酰亚胺结构单元和式（2）的重复结构单元的共聚物。组分（B）：光敏剂（式（2）中R 0为氢原子或甲基; R 1为单键或C 1-5亚烷基; R 2为可热交联的一价有机基团; 在式（2）的重复结构单元中，R 0可以彼此不同）。

53. 发明授权

US08674043B2 Photosensitive resin composition containing copolymer 失效
标题翻译：含有共聚物的感光树脂组合物
公开(公告)号：US08674043B2
公开(公告)日：2014-03-18
申请号：US13395336
申请日：2010-08-30
申请人： Takahiro Kishioka
发明人： Takahiro Kishioka
IPC分类号： C08F12/26 , C08F12/32 , C08F20/52 , C08F22/40 , C08F220/52 , C08F222/40
CPC分类号： G02B1/04 , C08F222/40 , C08F226/02 , G03F7/0233 , G03F7/40
摘要： There is provided a photosensitive resin composition having desired properties. A photosensitive resin composition comprising: a component (A) that is a copolymer including a structural unit of Formula (1) and at least one structural unit of Formula (2), and a component (B) that is a photosensitizer: (where two Xs are independently a hydrogen atom, a C1-5 alkyl group, a C5-6 cycloalkyl group, a phenyl group, or a benzyl group and Y is a hydrogen atom, a C1-5 alkyl group, a C5-6 cycloalkyl group, a phenyl group, or a benzyl group provided that each of a part or all of the hydrogen atoms in the alkyl group, the cycloalkyl group, the phenyl group, and the benzyl group is optionally substituted with a halogen atom, a carboxy group, a hydroxy group, an amino group, or a nitro group).
摘要翻译：提供具有所需性质的感光性树脂组合物。一种感光性树脂组合物，其特征在于，含有作为共聚物的成分（A），其包含式（1）的结构单元和式（2）的至少一个结构单元和作为光敏剂的成分（B） X独立地为氢原子，C1-5烷基，C5-6环烷基，苯基或苄基，Y为氢原子，C1-5烷基，C5-6环烷基，苯基或苄基，条件是烷基，环烷基，苯基和苄基中的一部分或全部氢原子任选被卤素原子，羧基，羟基，氨基或硝基）。

54. 发明授权

US08623745B2 Composition for forming gate insulating film for thin-film transistor 有权
标题翻译：用于形成用于薄膜晶体管的栅极绝缘膜的组合物
公开(公告)号：US08623745B2
公开(公告)日：2014-01-07
申请号：US13132526
申请日：2009-11-26
申请人： Shinichi Maeda , Takahiro Kishioka
发明人： Shinichi Maeda , Takahiro Kishioka
IPC分类号： H01L21/20
CPC分类号： H01L51/052 , C08G18/584 , C08G18/792 , C08G18/80 , C08G18/8077 , H01L51/0036 , H01L51/0545
摘要： There is provided a novel composition for forming a gate insulating film taking into consideration also electrical characteristics after other processes such as wiring by irradiation with an ultraviolet ray and the like during the production of an organic transistor using a gate insulating film. A composition for forming a gate insulating film for a thin-film transistor comprising: a component (i): an oligomer compound or a polymer compound containing a repeating unit having a structure in which a nitrogen atom of a triazine-trione ring is bonded to a nitrogen atom of another triazine-trione ring through a hydroxyalkylene group; and a component (ii): a compound having two or more blocked isocyanate groups in one molecule thereof.
摘要翻译：在使用栅极绝缘膜制造有机晶体管期间，还提供了一种用于形成栅极绝缘膜的新型组合物，其还考虑了在通过紫外线照射等布线等其他工艺之后的电特性。一种用于形成薄膜晶体管的栅极绝缘膜的组合物，包括：组分（i）：低聚物化合物或含有具有三嗪 - 三酮环的氮原子键合的结构的重复单元的高分子化合物另一个三嗪 - 三酮环的氮原子通过羟基亚烷基; 和组分（ii）：其一个分子中具有两个或多个封端异氰酸酯基团的化合物。

55. 发明申请

US20130216956A1 MONOLAYER OR MULTILAYER FORMING COMPOSITION 有权
标题翻译：单层或多层成型组合物
公开(公告)号：US20130216956A1
公开(公告)日：2013-08-22
申请号：US13879125
申请日：2011-10-07
申请人： Takahiro Kishioka , Daisuke Sakuma , Shigeo Kimura , Hirokazu Nishimaki , Tomoya Ohashi , Yuki Usui
发明人： Takahiro Kishioka , Daisuke Sakuma , Shigeo Kimura , Hirokazu Nishimaki , Tomoya Ohashi , Yuki Usui
IPC分类号： G03F7/075 , G03F7/20
CPC分类号： G03F7/0752 , C07F7/1804 , C08G77/28 , C09D183/08 , G03F7/0751 , G03F7/165 , G03F7/20 , G03F7/30
摘要： There is provided a composition for forming a monolayer or a multilayer on the substrate. A composition for forming a monolayer or a multilayer containing a silane compound of Formula (1A) or Formula (1B): [where R1s are independently a methyl group or an ethyl group; Xs are independently a C1-10 linking group; and Zs are independently a C1-10 alkyl group or a phenyl group optionally having a substituent, where X optionally contains at least one oxygen atom or sulfur atom in the main chain thereof, and when Z is an alkyl group, at least one hydrogen atom of the alkyl group is optionally substituted with a fluorine atom] and an organic solvent.
摘要翻译：提供了在基材上形成单层或多层的组合物。用于形成单层的组合物或含有式（1A）或式（1B）的硅烷化合物的多层：[其中R 1独立地是甲基或乙基; X独立地为C1-10连接基团; 并且Z独立地为C1-10烷基或任选具有取代基的苯基，其中X任选地在其主链中含有至少一个氧原子或硫原子，当Z为烷基时，至少一个氢原子的烷基任选被氟原子取代]和有机溶剂。

56. 发明申请

US20110311915A1 PHOTOSENSITIVE RESIST UNDERLAYER FILM FORMING COMPOSITION 有权
标题翻译：光敏电阻膜形成组合物
公开(公告)号：US20110311915A1
公开(公告)日：2011-12-22
申请号：US12817648
申请日：2010-06-17
申请人： Shigeo Kimura , Hirokazu Nishimaki , Tomoya Ohashi , Yuki Usui , Takahiro Kishioka
发明人： Shigeo Kimura , Hirokazu Nishimaki , Tomoya Ohashi , Yuki Usui , Takahiro Kishioka
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0392 , G03F7/091 , G03F7/095
摘要： A resist underlayer film forming composition used in a lithography process includes: a polymer (A) containing a unit structure having a hydroxy group, a unit structure having a carboxy group, or combination thereof; a crosslinkable compound (B) having at least two vinyl ether groups; a photoacid generator (C); a C4-20 fluoroalkylcarboxylic acid or a salt of the fluoroalkylcarboxylic acid (D); and a solvent (E). The polymer (A) includes a unit structure selected from unit structures of Formula (1), Formula (2), and Formula (3);
摘要翻译：在光刻工艺中使用的抗蚀剂下层膜成膜组合物包括：含有具有羟基的单元结构的聚合物（A），具有羧基的单元结构或其组合; 具有至少两个乙烯基醚基团的交联性化合物（B）光致酸发生器（C）; C4-20氟代烷基羧酸或氟烷基羧酸（D）的盐; 和溶剂（E）。聚合物（A）包括选自式（1），式（2）和式（3）的单元结构的单元结构;

57. 发明授权

US07790356B2 Condensation type polymer-containing anti-reflective coating for semiconductor 有权
标题翻译：用于半导体的冷凝型聚合物抗反射涂层
公开(公告)号：US07790356B2
公开(公告)日：2010-09-07
申请号：US11547001
申请日：2005-04-06
申请人： Takahiro Kishioka , Rikimaru Sakamoto , Yoshiomi Hiroi , Daisuke Maruyama
发明人： Takahiro Kishioka , Rikimaru Sakamoto , Yoshiomi Hiroi , Daisuke Maruyama
IPC分类号： G03F7/11 , C08L79/04 , C09D163/00 , C09D179/04 , H01L21/027
CPC分类号： C08G73/0616 , C08G61/122 , C08G61/123 , C08G73/0638 , C08L79/04 , G02B1/111 , G03F7/091 , Y10S438/952
摘要： There is provided an anti-reflective coating forming composition comprising a polymer having a pyrimidinetrione structure, imidazolidinedione structure, imidazolidinetrione structure or triazinetrione structure and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, and can use in lithography process by use of a light having a short wavelength such as ArF excimer laser beam (wavelength 193 nm) or F2 excimer laser beam (wavelength 157 nm), etc.
摘要翻译：提供了包含具有嘧啶四酮结构的聚合物，咪唑烷二酮结构，咪唑烷四酮结构或三嗪三酮结构的抗反射涂层形成组合物和溶剂。由组合物得到的抗反射涂层对反射光具有很高的防止效果，不会与光致抗蚀剂混合，并且可以在光刻工艺中使用具有短波长的光，例如ArF准分子激光束（波长193nm）或F2准分子激光束（波长157nm）等

58. 发明申请

US20090053647A1 Coating-type underlayer coating forming composition for lithography containing naphthalene resin derivative 有权
标题翻译：含有萘树脂衍生物的光刻用涂布型下层涂料组合物
公开(公告)号：US20090053647A1
公开(公告)日：2009-02-26
申请号：US11921790
申请日：2006-05-24
申请人： Tomoyuki Enomoto , Takahiro Kishioka , Takahiro Sakaguchi
发明人： Tomoyuki Enomoto , Takahiro Kishioka , Takahiro Sakaguchi
IPC分类号： G03F7/09 , C08G63/66 , G03F7/20 , C08G63/06
CPC分类号： G03F7/11 , G03F7/091
摘要： [Object] To provide a coating-type underlayer coating forming composition containing a naphthalene resin derivative. [Means for Solving Problems] A coating-type underlayer coating forming composition for lithography comprising a compound of formula (1): wherein A is an organic group having an aromatic group, R1 is hydroxy group, an alkyl group, an alkoxy group, a halogen group, a thiol group, an amino group or an amide group, m1 is the number of A substituted on the naphthalene ring and is an integer of 1 to 6, m2 is the number of R1 substituted on the naphthalene ring and is an integer of 0 to 5, a sum of m1 and m2 (m1+m2) is an integer of 1 to 6, in cases where the sum is an integer other than 6, the reminder is hydrogen atom, and n is the number of repeating units ranging from 2 to 7000.
摘要翻译：提供一种含有萘树脂衍生物的涂布型下层涂料形成组合物。 [用于解决问题的方法]一种用于光刻的涂布型下层涂料组合物，其包含式（1）化合物：其中A是具有芳基的有机基团，R 1是羟基，烷基，烷氧基，卤素基，硫醇基，氨基或酰胺基，m1是在萘环上取代的A的数，为1〜6的整数，m2为在萘环上取代的R 1的数，为整数为0〜5，m1和m2（m1 + m2）的和为1〜6的整数，在和为6以外的整数的情况下，提醒为氢原子，n为重复单元数范围从2到7000。

59. 发明申请

US20080003524A1 Sulfonate-Containing Anti-Reflective Coating Forming Composition for Lithography 有权
标题翻译：含磺酸盐的防反射涂料组合物用于光刻
公开(公告)号：US20080003524A1
公开(公告)日：2008-01-03
申请号：US11666080
申请日：2005-10-25
申请人： Takahiro Kishioka , Tadashi Hatanaka , Shigeo Kimura
发明人： Takahiro Kishioka , Tadashi Hatanaka , Shigeo Kimura
IPC分类号： G03F7/11 , C08G59/14 , H01L21/027
CPC分类号： G03F7/091 , C08G59/1433 , C08G59/1483 , C08G59/26 , C08G59/28 , Y10S438/952
摘要： There is provided an anti-reflective coating forming composition for lithography comprising a polymer compound, a crosslinking compound, a crosslinking catalyst, a sulfonate compound and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light causes no intermixing with photoresists, has a higher dry etching rate compared with photoresists, can form a photoresist pattern having no footing at the lower part, and can use in lithography process by use of a light such as ArF excimer laser beam and F2 excimer laser beam, etc.
摘要翻译：提供了一种用于光刻的抗反射涂层形成组合物，其包含高分子化合物，交联化合物，交联催化剂，磺酸盐化合物和溶剂。由组合物得到的抗反射涂层对反射光具有很高的防止效果，不会与光致抗蚀剂混合，与光致抗蚀剂相比具有更高的干蚀刻速率，可以形成在下部没有基脚的光致抗蚀剂图案，并且可以用于通过使用诸如ArF准分子激光束和F2准分子激光束等光的光刻工艺

60. 发明申请

US20060210915A1 Composition for forming lower layer film for lithography comprising compound having protected carboxyl group 有权
标题翻译：用于形成用于光刻的下层膜的组合物，其包含具有保护的羧基的化合物
公开(公告)号：US20060210915A1
公开(公告)日：2006-09-21
申请号：US10565968
申请日：2004-07-30
申请人： Satoshi Takei , Takahiro Kishioka , Yasushi Sakaida , Tetsuya Shinjo
发明人： Satoshi Takei , Takahiro Kishioka , Yasushi Sakaida , Tetsuya Shinjo
IPC分类号： G03C1/76
CPC分类号： G03F7/091 , Y10S430/106
摘要： There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry-etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely it is an underlayer coating forming composition comprising a compound having a protected carboxyl group, a compound having a group capable of reacting with a carboxyl group and a solvent, and an underlayer coating forming composition comprising a compound having a group capable of reacting with a carboxyl group and a protected carboxyl group and a solvent.
摘要翻译：提供了用于光刻的底层涂层形成组合物和与光致抗蚀剂相比具有高干蚀刻速率的下层涂层，并且不与用于制造半导体器件的光刻工艺中的光致抗蚀剂混合。具体地说，它是包含具有被保护的羧基的化合物，具有与羧基反应的基团的化合物和溶剂的底层涂层形成组合物，以及下层涂层形成组合物，其包含具有能够与羧基反应的基团的化合物羧基和保护的羧基和溶剂。

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