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    • 54. 发明授权
    • Method for producing thin film transistor and thin film transistor using the same
    • 使用该薄膜晶体管和薄膜晶体管的薄膜晶体管的制造方法
    • US06218206B1
    • 2001-04-17
    • US09153332
    • 1998-09-15
    • Kazunori InoueMasaru AokiMunehito KumagaiShigeaki NoumiTohru Takeguchi
    • Kazunori InoueMasaru AokiMunehito KumagaiShigeaki NoumiTohru Takeguchi
    • H01L2100
    • H01L29/66765
    • To provide a method of producing a TFT array and a liquid crystal display apparatus in which a contact resistivity of a pixel electrode and a drain electrode through a contact hole in an interlayer insulating film can be not more than 10E4&OHgr; stably. A method of producing TFT of the present invention for a liquid crystal display apparatus includes the step of forming TFT, the step of forming an interlayer insulating film, in which the surface is made to be flat so that a level difference due to the TFT area is eliminated, on a transparent insulating substrate, the step of providing a contact hole on a drain electrode of the interlayer insulating film so as to forming a pixel electrode on the interlayer insulating film so that the pixel electrode is electrically connected with the drain electrode through the contact hole, and the step of after forming the contact hole on the interlayer insulating film, applying a surface treatment for cleaning the surface of the contact portion to the surface of the substrate including the surface of the drain electrode exposed from the contact hole.
    • 为了提供一种制造TFT阵列的方法和液晶显示装置,其中通过层间绝缘膜中的接触孔的像素电极和漏极的接触电阻率可以稳定在10E4OMEGA以下。 本发明的液晶显示装置的TFT的制造方法包括以下步骤:形成TFT,形成层间绝缘膜的步骤,其中使所述表面平坦,使得由TFT区域引起的电平差 在透明绝缘基板上消除了在层间绝缘膜的漏电极上设置接触孔的步骤,以在层间绝缘膜上形成像素电极,使得像素电极通过与漏极电连接而电连接 所述接触孔以及在所述层间绝缘膜上形成所述接触孔之后的步骤,对所述接触部的表面进行表面处理,将所述接触部的表面进行表面处理,所述表面处理包括从所述接触孔露出的所述漏电极的表面。
    • 58. 发明申请
    • DUPLEXER, SUBSTRATE FOR DUPLEXER, AND ELECTRONIC APPARATUS
    • 双工器,双工器基板和电子设备
    • US20100244979A1
    • 2010-09-30
    • US12564648
    • 2009-09-22
    • Takashi MATSUDAKazunori InoueShogo Inoue
    • Takashi MATSUDAKazunori InoueShogo Inoue
    • H01P5/12
    • H03H9/706H03H9/0571H03H9/0576H03H9/725
    • A duplexer includes a transmit filter connected between a common terminal and a transmission terminal, a receive filter connected between the common terminal and a reception terminal, a capacitor connected in parallel with one of the transmit filter and the receive filter and provided between two terminals of the common terminal, the transmission terminal, and the reception terminal, and a package. The package includes an insulating layer, foot pads that include the common terminal, the transmission terminal and the reception terminal and are formed on one surface of the insulating layer, and interconnections formed on another surface opposite to the one surface of the insulating layer. The capacitor is composed of two capacitor forming units that are connected in parallel with each other and are formed with at least one foot pad of the foot pads and two of the interconnections that overlap with two opposing sides of the at least one food pad respectively.
    • 双工器包括连接在公共端子和发送端子之间的发送滤波器,连接在公共端子和接收端子之间的接收滤波器,与发射滤波器和接收滤波器之一并联连接的电容器, 公共终端,发送终端和接收终端,以及包。 封装包括绝缘层,包括公共端子,发送端子和接收端子并且形成在绝缘层的一个表面上的脚垫以及形成在与绝缘层的一个表面相对的另一表面上的互连。 电容器由两个电容器形成单元组成,两个电容器形成单元彼此并联连接并且形成有足垫的至少一个脚垫和分别与至少一个食物垫的两个相对侧重叠的两个互连。