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51. 发明申请

US20130240924A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20130240924A1
公开(公告)日：2013-09-19
申请号：US13421898
申请日：2012-03-16
申请人： Ching-Huai Ni , Chia-Liang Hsu , Yi-Ming Chen
发明人： Ching-Huai Ni , Chia-Liang Hsu , Yi-Ming Chen
IPC分类号： H01L33/22
CPC分类号： H01L33/382 , H01L33/22 , H01L33/24 , H01L33/30 , H01L33/32 , H01L2933/0016
摘要： A light-emitting device comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer; a bonding layer formed between the substrate and the semiconductor stack; and a plurality of buried electrodes physically buried in the first type semiconductor layer.
摘要翻译：发光装置包括基板; 包括第一类型半导体层，第二类型半导体层和形成在第一类型半导体层和第二类型半导体层之间的有源层的半导体堆叠; 形成在所述基板和所述半导体叠层之间的接合层; 以及物理地埋在第一类型半导体层中的多个埋置电极。

52. 外观设计

USD682796S1 Light emitting diode 有权
公开(公告)号：USD682796S1
公开(公告)日：2013-05-21
申请号：US29418038
申请日：2012-04-11
申请人： Chia-Liang Hsu , Pang-Yen Liu
设计人： Chia-Liang Hsu , Pang-Yen Liu

53. 发明授权

US08344412B2 Chip level package of light-emitting diode 有权
标题翻译：芯片级封装的发光二极管
公开(公告)号：US08344412B2
公开(公告)日：2013-01-01
申请号：US12648911
申请日：2009-12-29
申请人： Chia-Liang Hsu , Shu-Ting Hsu , Min-Hsun Hsieh , Chih-Chiang Lu , Alexander Wang
发明人： Chia-Liang Hsu , Shu-Ting Hsu , Min-Hsun Hsieh , Chih-Chiang Lu , Alexander Wang
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/62 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The application discloses a light-emitting diode chip level package structure including: a permanent substrate having a first surface and a second surface; a first electrode on the first surface; a second electrode on the second surface; an adhesive layer on where the first surface of the permanent substrate is not covered by the first electrode; a growth substrate on the adhesive layer; a patterned semiconductor structure on the growth substrate; a third electrode and a fourth electrode on the patterned semiconductor structure and electrically connect with the patterned semiconductor structure; an electrical connecting structure on the sidewall of the patterned semiconductor structure electrically connecting the third electrode and the fourth electrode with the first electrode; and an insulation layer located on the side wall of the patterned semiconductor structure and between the electrical connecting structure for electrically insulating the patterned semiconductor structure.
摘要翻译：本申请公开了一种发光二极管芯片级封装结构，包括：具有第一表面和第二表面的永久基板; 第一表面上的第一电极; 在第二表面上的第二电极; 在永久性基板的第一表面未被第一电极覆盖的粘合剂层上; 粘合剂层上的生长衬底; 生长衬底上的图案化半导体结构; 图案化半导体结构上的第三电极和第四电极，并与图案化的半导体结构电连接; 所述图案化半导体结构的侧壁上的电连接结构将所述第三电极和所述第四电极与所述第一电极电连接; 以及位于图案化半导体结构的侧壁上以及用于使图案化半导体结构电绝缘的电连接结构之间的绝缘层。

54. 发明申请

US20120261695A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120261695A1
公开(公告)日：2012-10-18
申请号：US13307899
申请日：2011-11-30
申请人： Yi-Ming Chen , Min-Hsun Hsieh , Chia-Liang Hsu
发明人： Yi-Ming Chen , Min-Hsun Hsieh , Chia-Liang Hsu
IPC分类号： H01L33/10
CPC分类号： H01L33/08 , H01L33/0079 , H01L33/10 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting device includes a first electrode; a light-emitting stacked layer on the first electrode; a first contact layer on the light-emitting stacked layer, wherein the first contact layer includes a first contact link and a plurality of first contact lines connected to the first contact link; a first conductive post in the light-emitting stacked layer and electrically connecting the first electrode and the first contact layer; and a passivation layer between the first conductive post and the light-emitting stacked layer.
摘要翻译：发光装置包括第一电极; 在第一电极上的发光堆叠层; 在所述发光层叠层上的第一接触层，其中所述第一接触层包括第一接触链和连接到所述第一接触链的多个第一接触线; 在所述发光层叠层中的第一导电柱，并且电连接所述第一电极和所述第一接触层; 以及第一导电柱和发光层叠层之间的钝化层。

55. 发明授权

US07967491B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US07967491B2
公开(公告)日：2011-06-28
申请号：US12891927
申请日：2010-09-28
申请人： Chia-Liang Hsu , Shu-Ting Hsu
发明人： Chia-Liang Hsu , Shu-Ting Hsu
IPC分类号： F21V33/00
CPC分类号： H01L33/60 , H01L25/0753 , H01L33/54 , H01L2924/0002 , Y10S362/80 , H01L2924/00
摘要： This application relates to a light-emitting device comprising a light channel having an upper surface, a lower surface opposite to the upper surface, an inner surface intersecting with each of the upper and lower surface by different angles, and an escape surface; and a light-emitting element having a bottom surface substantially parallel to the inner surface and emitting light traveling inside the light channel toward the escape surface. In an embodiment, the escape surface of the light-emitting device is an inclined plane with lens array thereon.
摘要翻译：本申请涉及一种发光装置，包括具有上表面，与上表面相对的下表面的光通道，与上表面和下表面中的每一个以不同角度相交的内表面和逃逸表面; 以及发光元件，其具有基本上平行于内表面的底表面，并且发射在光通道内朝向逸出表面行进的光。在一个实施例中，发光装置的逸出表面是其上具有透镜阵列的倾斜平面。

56. 发明申请

US20100072497A1 LIGHT EMITTING DIODE CHIP 有权
标题翻译：发光二极管芯片
公开(公告)号：US20100072497A1
公开(公告)日：2010-03-25
申请号：US12629030
申请日：2009-12-01
申请人： Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu , Ching-Shih Ma
发明人： Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu , Ching-Shih Ma
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/30 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/483 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01L2924/00012
摘要： A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region.
摘要翻译：发光二极管芯片包括永久性基板，其具有形成在永久基板上的保持空间; 绝缘层和顺序地形成在永久性基板和保持间隔物上的金属层; 具有共晶层和发光区域的管芯，并通过耦合到金属层的共晶层与保持空间内的金属层接合; 填充在所述保持空间和所述模具之间的填充结构; 以及形成在管芯上并与发光区域接触的电极。

57. 发明申请

US20080105863A1 LIGHT EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080105863A1
公开(公告)日：2008-05-08
申请号：US11749139
申请日：2007-05-15
申请人： Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu
发明人： Chang-Da Tsai , Wei-Che Wu , Chia-Liang Hsu
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/30 , H01L33/385 , H01L33/40 , H01L33/405 , H01L33/483 , H01L2224/04105 , H01L2224/24 , H01L2224/32225 , H01L2224/73267 , H01L2224/82 , H01L2224/92244 , H01L2924/15153
摘要： A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer further comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer but not contacted to the second area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.
摘要翻译：发光二极管包括永久性基板，其具有形成在永磁基板的第一表面上的芯片保持空间; 绝缘层和金属层，其顺序形成在所述永久基板的第一表面和所述芯片保持空间上，其中所述金属层还包括第一区域和不彼此接触的第二区域; 芯片，其具有附接在所述芯片保持空间的底部上的第一表面，与所述金属层的所述第一区域接触，但不与所述金属层的所述第二区域接触; 填充在芯片保持空间和芯片之间的填充结构; 以及形成在所述芯片的第二表面上的第一电极。芯片包括发光区域，并且通过使用芯片接合技术来实现金属层的第一区域和发光区域之间的电连接。

58. 发明授权

US09202983B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US09202983B2
公开(公告)日：2015-12-01
申请号：US13421898
申请日：2012-03-16
申请人： Ching-Huai Ni , Chia-Liang Hsu , Yi-Ming Chen
发明人： Ching-Huai Ni , Chia-Liang Hsu , Yi-Ming Chen
IPC分类号： H01L31/12 , H01L27/32 , H01L33/38 , H01L33/22
CPC分类号： H01L33/382 , H01L33/22 , H01L33/24 , H01L33/30 , H01L33/32 , H01L2933/0016
摘要： A light-emitting device comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer; a bonding layer formed between the substrate and the semiconductor stack; and a plurality of buried electrodes physically buried in the first type semiconductor layer.
摘要翻译：发光装置包括基板; 包括第一类型半导体层，第二类型半导体层和形成在第一类型半导体层和第二类型半导体层之间的有源层的半导体堆叠; 形成在所述基板和所述半导体叠层之间的接合层; 以及物理地埋在第一类型半导体层中的多个埋置电极。

59. 发明申请

US20130201483A1 METHOD AND APPARATUS FOR TESTING LIGHT-EMITTING DEVICE 有权
标题翻译：用于测试发光装置的方法和装置
公开(公告)号：US20130201483A1
公开(公告)日：2013-08-08
申请号：US13365820
申请日：2012-02-03
申请人： Chia-Liang Hsu , Chih-Chiang Lu
发明人： Chia-Liang Hsu , Chih-Chiang Lu
IPC分类号： G01J1/04 , G01J1/42
CPC分类号： G01R31/308 , G01J1/42 , G01J2001/4252 , G01R31/2635 , G01R31/44
摘要： Disclosed is a method for testing a light-emitting device comprising the steps of: providing a light-emitting device comprising a plurality of light-emitting diodes; driving the plurality of the light-emitting diodes with current; generating an image of the light-emitting device; and determining a luminous intensity of each of the light-emitting diodes with the image. An apparatus for testing a light-emitting device comprising a plurality of light-emitting diodes is also disclosed. The apparatus comprises: a current source to provide a current to drive the plurality of the light-emitting diodes; an image receiving device for receiving an image of the light-emitting device in the driven state; and a processing unit for determining a luminous intensity of each of the light-emitting diodes with the image.
摘要翻译：公开了一种用于测试发光器件的方法，包括以下步骤：提供包括多个发光二极管的发光器件; 用电流驱动多个发光二极管; 产生发光装置的图像; 以及用图像确定每个发光二极管的发光强度。还公开了一种用于测试包括多个发光二极管的发光器件的装置。该装置包括：电流源，用于提供驱动多个发光二极管的电流; 图像接收装置，用于接收驱动状态下的发光装置的图像; 以及处理单元，用于利用图像确定每个发光二极管的发光强度。

60. 发明授权

US08395175B2 Light-emitting semiconductor device and package thereof 有权
标题翻译：发光半导体器件及其封装
公开(公告)号：US08395175B2
公开(公告)日：2013-03-12
申请号：US13569612
申请日：2012-08-08
申请人： Chia-Liang Hsu
发明人： Chia-Liang Hsu
IPC分类号： H01L33/00
CPC分类号： H01L33/507 , H01L33/44 , H01L33/46 , H01L33/60 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： The present application discloses a light-emitting semiconductor device including a transparent layer having an upper surface, a lower surface, and a sidewall; a wavelength conversion structure arranged on the upper surface; an epitaxial structure arranged on the lower surface and having a side surface devoid of the transparent layer and the wavelength conversion structure; and a reflective wall arranged to cover the sidewall.
摘要翻译：本申请公开了一种包括具有上表面，下表面和侧壁的透明层的发光半导体器件; 布置在所述上表面上的波长转换结构; 外延结构，其布置在下表面上并具有不具有透明层和波长转换结构的侧表面; 以及布置成覆盖侧壁的反射壁。

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