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    • 53. 发明授权
    • Liquid crystal display and method of manufacturing the same
    • 液晶显示器及其制造方法
    • US08460955B2
    • 2013-06-11
    • US13430280
    • 2012-03-26
    • Tae-Young ChoiBo-Sung KimYoung-Min Kim
    • Tae-Young ChoiBo-Sung KimYoung-Min Kim
    • H01L21/00H01L51/40H01L21/84
    • H01L27/1225G02F1/136209G02F1/13624G02F2001/136222H01L27/1248H01L27/1288
    • The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter.
    • 本发明提供了一种在液晶显示器中具有高性能的薄膜晶体管,以及根据本发明的示例性实施例的液晶显示器的制造方法,包括:在基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成包括与所述源电极相对的源电极和漏电极的数据线; 形成限定像素区域并具有使栅极电极上的栅极绝缘层,栅极线上的源极电极和漏极电极以及数据线和漏极电极露出的开口区域; 在开口区域形成半导体; 在由分区限定的像素区域中形成滤色器; 以及在滤色器上形成连接到漏电极的像素电极。