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    • 51. 发明申请
    • SOLAR CELL EMITTER REGION FABRICATION USING ION IMPLANTATION
    • 太阳能电池发射区使用离子植入制造
    • US20150162483A1
    • 2015-06-11
    • US14562159
    • 2014-12-05
    • Timothy WeidmanDavid D. Smith
    • Timothy WeidmanDavid D. Smith
    • H01L31/18H01L31/0224H01L31/068H01L31/0368
    • H01L31/182H01L31/022441H01L31/035272H01L31/0682H01L31/1864H01L31/1872H01L31/1876Y02E10/546Y02E10/547Y02P70/521
    • Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a method of fabricating alternating N-type and P-type emitter regions of a solar cell involves forming a silicon layer above a substrate. Dopant impurity atoms of a first conductivity type are implanted, through a first shadow mask, in the silicon layer to form first implanted regions and resulting in non-implanted regions of the silicon layer. Dopant impurity atoms of a second, opposite, conductivity type are implanted, through a second shadow mask, in portions of the non-implanted regions of the silicon layer to form second implanted regions and resulting in remaining non-implanted regions of the silicon layer. The remaining non-implanted regions of the silicon layer are removed with a selective etch process, while the first and second implanted regions of the silicon layer are annealed to form doped polycrystalline silicon emitter regions.
    • 描述了使用离子注入制造太阳能电池发射极区域的方法,以及所得到的太阳能电池。 在一个示例中,制造太阳能电池的交替的N型和P型发射极区域的方法涉及在衬底上形成硅层。 第一导电类型的掺杂杂质原子通过第一阴影掩模在硅层中注入以形成第一注入区,并产生硅层的非注入区。 通过第二阴影掩模,在硅层的非注入区域的一部分中注入第二相对导电类型的掺杂杂质原子,以形成第二注入区,并产生硅层的剩余未注入区。 通过选择性蚀刻工艺去除硅层的其余非注入区域,同时对硅层的第一和第二注入区域进行退火以形成掺杂的多晶硅发射极区域。