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51. 发明授权

US08057634B2 Method and apparatus for plasma processing 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US08057634B2
公开(公告)日：2011-11-15
申请号：US10902032
申请日：2004-07-30
申请人： Ryoji Nishio , Tadamitsu Kanekiyo , Yoshiyuki Oota , Tsuyoshi Matsumoto
发明人： Ryoji Nishio , Tadamitsu Kanekiyo , Yoshiyuki Oota , Tsuyoshi Matsumoto
IPC分类号： H01L21/205 , H01L21/302
CPC分类号： G06F17/5081 , G06F17/5086 , H01J37/32082 , H01J37/32642 , H01J37/32935 , H01L21/67069 , H01L21/6875
摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.
摘要翻译：本发明提供一种等离子体处理装置，其能够最小化晶片周边周围的电位分布的不均匀性，并且跨晶片表面提供均匀的工艺。该装置配备有由电介质，导体或半导体形成的并且施加RF的聚焦环，其设计被优化用于基于澄清用于使晶片上的鞘等离子体界面平坦化的物理条件的设计技术进行处理以及聚焦环上方的鞘 - 等离子体界面。聚焦环的表面电压被确定为不低于用于防止由晶片加工引起的反应产物沉积在其上的最小电压。聚焦环的表面高度，表面电压，材料和结构被优化，使得形成在聚焦环表面上的离子鞘的高度相等或具有在离子鞘高度适当的公差范围内的高度差形成在晶片表面上。通过考虑由聚焦环的消耗引起的变化，建立适当的公差范围来实现结构的优化。

52. 发明申请

US20110100954A1 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS 有权
标题翻译：等离子体蚀刻方法和等离子体蚀刻装置
公开(公告)号：US20110100954A1
公开(公告)日：2011-05-05
申请号：US12700903
申请日：2010-02-05
申请人： Makoto SATAKE , Kenji Maeda , Kenetsu Yokogawa , Tsutomu Tetsuka , Tatehito Usui , Ryoji Nishio
发明人： Makoto SATAKE , Kenji Maeda , Kenetsu Yokogawa , Tsutomu Tetsuka , Tatehito Usui , Ryoji Nishio
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： G11B5/84 , C23F4/00 , H01F10/14 , H01F10/16 , H01J37/321 , H01J37/32146 , H01J37/32449 , H01L43/12
摘要： In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.
摘要翻译：在使用等离子体产生气体产生等离子体的真空反应器和含有C和O的气体中处理由例如形成在基板上的Fe，Co或Ni构成的磁膜和含有该磁膜的非挥发性金属，用于产生等离子体的天线是时间调制的，其中将包含C和O的气体馈送到真空电抗器与时间调制的天线功率同步，使得当天线向真空电抗器供应包含C和O的气体被抑制时功率高，当天线功率低时，含有C和O的气体进入真空电抗器。

53. 发明授权

US06967109B2 Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units 失效
标题翻译：等离子体处理装置中的过程监视方法，监视单元以及使用监视单元的样本处理方法
公开(公告)号：US06967109B2
公开(公告)日：2005-11-22
申请号：US10880501
申请日：2004-07-01
申请人： Tatehito Usui , Tetsuo Ono , Ryoji Nishio , Kazue Takahashi , Nobuyuki Mise
发明人： Tatehito Usui , Tetsuo Ono , Ryoji Nishio , Kazue Takahashi , Nobuyuki Mise
IPC分类号： H01L21/66 , C23C16/50 , C23C16/52 , H01J37/32 , H01L23/544 , H01L21/302
CPC分类号： H01L22/34 , C23C16/50 , C23C16/52 , G01N21/73 , H01J37/32935 , H01L21/67253 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for measuring a potential difference for plasma processing with a plasma processing apparatus that processes a sample by introducing a gas into a vacuum chamber and generates plasma. A light-emitting portion is formed on a measurement-use sample of the sample to be processed and a current flows into the light-emitting portion according to a potential difference that has been generated across the light-emitting portion. An intensity of light emitted from the light-emitting portion according to a predetermined light intensity is measured and a potential difference on the measurement-use sample according to a predetermined light intensity is measured.
摘要翻译：一种用等离子体处理装置测量等离子体处理的电位差的方法和装置，其通过将气体引入真空室并产生等离子体来处理样品。在待处理样品的测量用样品上形成发光部分，并且电流根据在发光部分两端产生的电位差而流入发光部分。测量根据预定光强度从发光部分发射的光的强度，并且测量根据预定光强度的测量用样品上的电位差。

54. 发明授权

US09805915B2 Plasma processing apparatus 有权
公开(公告)号：US09805915B2
公开(公告)日：2017-10-31
申请号：US13020991
申请日：2011-02-04
申请人： Masaharu Gushiken , Megumu Saitou , Ryoji Nishio
发明人： Masaharu Gushiken , Megumu Saitou , Ryoji Nishio
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , H01J37/32174 , H01J37/32183 , H01J37/32651
摘要： In the present invention, there is provided a plasma processing apparatus including a vacuum processing chamber for applying a plasma processing to a sample, a sample stage deployed inside the vacuum processing chamber for mounting the sample thereon, induction antennas provided outside the vacuum processing chamber, a radio-frequency power supply for supplying a radio-frequency power to the induction antennas, and a Faraday shield which is capacitively coupled with the plasma, a radio-frequency voltage being applied to the Faraday shield from the radio-frequency power supply via a matching box, wherein the matching box includes a series LC circuit including a variable capacitor and an inductor, a motor control unit for controlling a motor for the variable capacitor, and a radio-frequency voltage detection unit for detecting the radio-frequency voltage applied to the Faraday shield, the matching box executing a feedback control over the radio-frequency voltage applied to the Faraday shield.

55. 发明申请

US20130087288A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20130087288A1
公开(公告)日：2013-04-11
申请号：US13363427
申请日：2012-02-01
申请人： Yusaku SAKKA , Ryoji Nishio , Tadayoshi Kawaguchi
发明人： Yusaku SAKKA , Ryoji Nishio , Tadayoshi Kawaguchi
IPC分类号： H01L21/3065
CPC分类号： H01J37/3211 , H01J37/32651
摘要： In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.
摘要翻译：在能够调整感应线圈的供电部的感应磁场分布的等离子体处理装置中，校正试样上的等离子体分布，对试样施加均匀的等离子体处理，对样品进行等离子体处理，电介质窗形成真空处理室的上表面，将气体导入真空处理室的气体引入部，设置在真空处理室中并且放置有试样的试样台，上述设置的感应线圈电介质窗口和向感应线圈提供高频电力的射频电源。等离子体处理装置包括布置在感应线圈下方的扁平导体。感应线圈包括交叉供电部。导体布置在供电部分的下方。

56. 发明授权

US08186300B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08186300B2
公开(公告)日：2012-05-29
申请号：US12370215
申请日：2009-02-12
申请人： Takamasa Ichino , Ryoji Nishio , Tomoyuki Tamura , Shinji Obama
发明人： Takamasa Ichino , Ryoji Nishio , Tomoyuki Tamura , Shinji Obama
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , B05C11/00 , H01J7/24 , H05B31/26
CPC分类号： H01J37/32935
摘要： A plasma processing apparatus for processing a surface of a to-be-processed substrate includes a processing chamber, a first electrode provided in the processing chamber, a second electrode arranged in opposition to the first electrode, a main power source for supplying the first or second electrode with power for generating a plasma, a biasing power source for supplying the second or first electrode with biasing power, a gas supplying unit for supplying a processing gas into the processing chamber and a control unit for controlling the main power source, the biasing power source and the gas supplying unit. The control unit performs a control such that, during a time of transition from a stationary state of plasma, in which a plasma processing is to be carried out, to a plasma quenching, an output of the main power source is kept not larger than an output of the biasing power source.
摘要翻译：一种用于处理被处理衬底的表面的等离子体处理装置包括处理室，设置在处理室中的第一电极，与第一电极相对布置的第二电极，用于供应第一或具有用于产生等离子体的功率的第二电极，用于向第二或第一电极供应偏压功率的偏置电源，用于将处理气体供应到处理室的气体供应单元和用于控制主电源的控制单元电源和气体供应单元。控制单元执行控制，使得在从要进行等离子体处理的等离子体的静止状态转变到等离子体淬火的时间期间，主电源的输出保持不大于输出偏置电源。

57. 发明申请

US20100163186A1 Plasma Processing Apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20100163186A1
公开(公告)日：2010-07-01
申请号：US12691855
申请日：2010-01-22
申请人： Tooru Aramaki , Ryoji Nishio
发明人： Tooru Aramaki , Ryoji Nishio
IPC分类号： C23F1/08 , C23C16/00
CPC分类号： H01L21/31116 , H01J37/32192 , H01J37/32568 , H01J37/32642 , H01L21/0273 , H01L21/32137 , H01L21/32139
摘要： A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure.
摘要翻译：一种等离子体处理装置，其中在位于处理室中的位于样品架上的半导体晶片上叠层形成的由多个层组成的层结构被蚀刻，该等离子体处理室中的等离子体通过向该电极提供高频电力设置在样品保持器中，该装置包括设置在电极上方并且围绕样品保持器的顶部的周围的环形电极，设置在环形电极上方并与等离子体相对的介电材料的外周环以及用于根据层结构的层的种类向环形电极提供不同值的电力的电源。

58. 发明申请

US20080236751A1 Plasma Processing Apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20080236751A1
公开(公告)日：2008-10-02
申请号：US11844377
申请日：2007-08-24
申请人： Tooru Aramaki , Ryoji Nishio
发明人： Tooru Aramaki , Ryoji Nishio
IPC分类号： H01L21/306
CPC分类号： H01L21/31116 , H01J37/32192 , H01J37/32568 , H01J37/32642 , H01L21/0273 , H01L21/32137 , H01L21/32139
摘要： A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure.
摘要翻译：一种等离子体处理装置，其中在位于处理室中的位于样品架上的半导体晶片上叠层形成的由多个层组成的层结构被蚀刻，该等离子体处理室中的等离子体通过向该电极提供高频电力设置在样品保持器中，该装置包括设置在电极上方并且围绕样品保持器的顶部的周围的环形电极，设置在环形电极上方并与等离子体相对的介电材料的外周环以及用于根据层结构的层的种类向环形电极提供不同值的电力的电源。

59. 发明申请

US20070227669A1 Method and apparatus for plasma processing 审中-公开
公开(公告)号：US20070227669A1
公开(公告)日：2007-10-04
申请号：US11802958
申请日：2007-05-29
申请人： Ryoji Nishio , Tadamitsu Kanekiyo , Yoshiyuki Oota , Tsuyoshi Matsumoto
发明人： Ryoji Nishio , Tadamitsu Kanekiyo , Yoshiyuki Oota , Tsuyoshi Matsumoto
IPC分类号： C23F1/00
CPC分类号： G06F17/5081 , G06F17/5086 , H01J37/32082 , H01J37/32642 , H01J37/32935 , H01L21/67069 , H01L21/6875
摘要： The invention provides a plasma processing apparatus capable of minimizing the non-uniformity of potential distribution around wafer circumference, and providing a uniform process across the wafer surface. The apparatus is equipped with a focus ring formed of a dielectric, a conductor or a semiconductor and having RF applied thereto, the design of which is optimized for processing based on a design technique clarifying physical conditions for flattening a sheath-plasma interface above a wafer and the sheath-plasma interface above the focus ring. A surface voltage of the focus ring is determined to be not less than a minimum voltage for preventing reaction products caused by wafer processing from depositing thereon. The surface height, surface voltage, material and structure of the focus ring are optimized so that the height of an ion sheath formed on the focus ring surface is either equal or has a height difference within an appropriate tolerance range to the height of the ion sheath formed on the wafer surface. Optimization of the structure is realized by setting up an appropriate tolerance range taking into consideration the variation caused by consumption of the focus ring.

60. 发明申请

US20070210032A1 Plasma Processing Apparatus And Method For Controlling The Same 有权
标题翻译：等离子体处理装置及其控制方法
公开(公告)号：US20070210032A1
公开(公告)日：2007-09-13
申请号：US11696263
申请日：2007-04-04
申请人： Ryoji Nishio
发明人： Ryoji Nishio
IPC分类号： H01L21/306
CPC分类号： H01J37/32165 , C23F4/00 , H01J37/32082
摘要： A method for controlling a plasma processing apparatus which includes a vacuum vessel, a first, second and third RF power supply, a first and second electrode, and a phase control unit for controlling a phase difference between a second RF voltage from the second RF power supply and a third RF voltage from the third RF power supply. The controlling method includes the steps of supplying a predetermined power from the first RF power supply to ignite plasma, after confirming ignition of plasma, supplying a predetermined power respectively from the second RF power supply and the third RF power supply, and when starting power supply from the second RF power supply and the third RF power supply, fixing the phase to a predetermined phase angle using a preset mode without carrying out phase control, and after a matching operation has stabilized, starting the phase control.
摘要翻译：一种用于控制等离子体处理装置的方法，其包括真空容器，第一，第二和第三RF电源，第一和第二电极以及相位控制单元，用于控制来自第二RF功率的第二RF电压之间的相位差电源和第三RF电源的第三RF电压。该控制方法包括以下步骤：在确认等离子体的点火之后，分别从第二RF电源和第三RF电源提供预定功率，以及当启动电源时，从第一RF电源提供预定功率以点燃等离子体从第二RF电源和第三RF电源，使用预设模式将相位固定为预定相位角，而不执行相位控制，并且在匹配操作已经稳定之后，开始相位控制。

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