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51. 发明授权

US08053350B2 Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device 有权
标题翻译：形成用于碲化镉基薄膜光伏器件的导电透明氧化物膜层的方法
公开(公告)号：US08053350B2
公开(公告)日：2011-11-08
申请号：US12750096
申请日：2010-03-30
申请人： Scott Daniel Feldman-Peabody , Jennifer Ann Drayton
发明人： Scott Daniel Feldman-Peabody , Jennifer Ann Drayton
IPC分类号： H01L21/44
CPC分类号： H01L31/022466 , H01L31/0488 , H01L31/073 , H01L31/1828 , H01L31/1884 , Y02E10/543
摘要： Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 50° C. to about 250° C., and annealing the transparent conductive oxide layer at an anneal temperature of about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.
摘要翻译：通常提供用于在基底上形成导电氧化物层的方法。在一个具体实施方案中，该方法可以包括在约50℃至约250℃的溅射温度下在衬底上溅射透明导电氧化物层，并且在约450°的退火温度下退火该透明导电氧化物层通常提供制造碲化镉基薄膜光伏器件的方法。

52. 发明授权

US09276157B2 Methods of treating a semiconductor layer 有权
标题翻译：处理半导体层的方法
公开(公告)号：US09276157B2
公开(公告)日：2016-03-01
申请号：US13601110
申请日：2012-08-31
申请人： Donald Franklin Foust , Hongbo Cao , Laura Anne Clark , Robert Andrew Garber , Scott Daniel Feldman-Peabody , Wyatt Keith Metzger , Yinghui Shan , Roman Shuba
发明人： Donald Franklin Foust , Hongbo Cao , Laura Anne Clark , Robert Andrew Garber , Scott Daniel Feldman-Peabody , Wyatt Keith Metzger , Yinghui Shan , Roman Shuba
IPC分类号： H01L21/00 , H01L31/073 , H01L21/02 , H01L31/0224 , H01L31/0392
CPC分类号： H01L31/1828 , H01L21/02052 , H01L31/022425 , H01L31/03925 , H01L31/073 , Y02E10/50 , Y02E10/543
摘要： Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.
摘要翻译：介绍了包括半导体材料在内的半导体层的处理方法。一种方法包括使半导体材料的至少一部分与钝化剂接触。该方法还包括通过将掺杂剂引入到半导体材料中来形成半导体层中的第一区域; 并形成富含硫族元素的区域。该方法还包括在半导体层中形成第二区域，第二区域包括掺杂剂，其中第二区域中的掺杂剂的平均原子浓度大于第一区域中掺杂剂的平均原子浓度。还介绍了光伏器件。

53. 发明申请

US20140065763A1 METHODS OF TREATING A SEMICONDUCTOR LAYER 有权
标题翻译：处理半导体层的方法
公开(公告)号：US20140065763A1
公开(公告)日：2014-03-06
申请号：US13601110
申请日：2012-08-31
申请人： Donald Franklin Foust , Hongbo Cao , Laura Anne Clark , Robert Andrew Garber , Scott Daniel Feldman-Peabody , Wyatt Keith Metzger , Yinghui Shan , Roman Shuba
发明人： Donald Franklin Foust , Hongbo Cao , Laura Anne Clark , Robert Andrew Garber , Scott Daniel Feldman-Peabody , Wyatt Keith Metzger , Yinghui Shan , Roman Shuba
IPC分类号： H01L31/18
CPC分类号： H01L31/1828 , H01L21/02052 , H01L31/022425 , H01L31/03925 , H01L31/073 , Y02E10/50 , Y02E10/543
摘要： Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.
摘要翻译：介绍了包括半导体材料在内的半导体层的处理方法。一种方法包括使半导体材料的至少一部分与钝化剂接触。该方法还包括通过将掺杂剂引入到半导体材料中来形成半导体层中的第一区域; 并形成富含硫族元素的区域。该方法还包括在半导体层中形成第二区域，第二区域包括掺杂剂，其中第二区域中的掺杂剂的平均原子浓度大于第一区域中掺杂剂的平均原子浓度。还介绍了光伏器件。

54. 发明申请

US20140027420A1 DUAL LASERS FOR REMOVING GLASS-SIDE DEBRIS DURING THE MANUFACTURE OF THIN FILM PHOTOVOLTAIC DEVICES 有权
标题翻译：用于在薄膜光伏器件的制造过程中去除玻璃面的双激光器
公开(公告)号：US20140027420A1
公开(公告)日：2014-01-30
申请号：US13560354
申请日：2012-07-27
申请人： Scott Daniel Feldman-Peabody , William J. Schaffer
发明人： Scott Daniel Feldman-Peabody , William J. Schaffer
IPC分类号： B23K26/36 , B23K26/08 , B23K26/067 , B23K26/02
CPC分类号： B23K26/57 , B23K26/0608 , B23K26/0617 , B23K26/364 , B23K26/40 , B23K2103/172 , H01L31/0463 , H01L31/073 , Y02E10/543
摘要： Methods and systems for forming a scribe line in a thin film stack on an inner surface of a thin film photovoltaic superstrate are provided via the use of a cleaning laser beam and a scribing laser beam. The cleaning laser beam is focused directly onto the exposed surface of the superstrate such that the cleaning laser beam removes debris from the exposed surface of the superstrate, and the scribing laser beam is focused through the exposed surface of the superstrate and onto the thin film stack such that the scribing laser beam passes through the superstrate to form a scribe within the thin film stack on the inner surface of the superstrate. The method and system can further utilize a conveyor to transport the superstrate in a machine direction to move the superstrate past the cleaning laser source and the scribing laser source.
摘要翻译：通过使用清洁激光束和划线激光束来提供在薄膜光伏衬底的内表面上形成薄膜叠层中划线的方法和系统。清洁激光束直接聚焦在覆盖物的暴露表面上，使得清洁激光束从覆盖物的暴露表面去除碎屑，并且划线激光束通过覆盖层的暴露表面聚焦到薄膜堆叠上使得划线的激光束通过覆盖层，以在覆盖层的内表面上的薄膜堆叠内形成划线。该方法和系统可以进一步利用输送机在机器方向上输送顶板，以使覆盖物移动通过清洁激光源和划线激光源。

55. 发明申请

US20130112246A1 RIB ELEMENTS FOR PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE 审中-公开
标题翻译：用于光伏器件的RIB元件及其制造方法
公开(公告)号：US20130112246A1
公开(公告)日：2013-05-09
申请号：US13290494
申请日：2011-11-07
申请人： Jed Emeron Isom , Scott Daniel Feldman-Peabody
发明人： Jed Emeron Isom , Scott Daniel Feldman-Peabody
IPC分类号： H01L31/048 , H01L31/0203
CPC分类号： H01L31/073 , H01L31/048 , H01L31/049 , Y02E10/543 , Y02P70/521
摘要： Thin film photovoltaic devices including a transparent substrate; a thin film stack comprising a transparent conductive oxide layer, a photovoltaic heterojunction, and back contact layer; and, an encapsulation material arranged such that the thin film stack is positioned between the transparent substrate and the encapsulation material are generally provided. The encapsulation material defines a rib element and can be generally positioned such that the rib element extends away from the thin film stack.
摘要翻译：包括透明基板的薄膜光伏器件; 包括透明导电氧化物层，光伏异质结和背接触层的薄膜堆叠; 并且通常设置使得薄膜叠层位于透明基板和封装材料之间的封装材料。封装材料限定了肋元件，并且可以大致定位成使得肋元件远离薄膜叠层延伸。

56. 发明申请

US20130025646A1 PHOTOVOLTAIC MODULE WITH IMPROVED DEAD CELL CONTACT 审中-公开
标题翻译：具有改进的死亡细胞接触的光伏模块
公开(公告)号：US20130025646A1
公开(公告)日：2013-01-31
申请号：US13192578
申请日：2011-07-28
申请人： Scott Daniel Feldman-Peabody
发明人： Scott Daniel Feldman-Peabody
IPC分类号： H01L31/05 , H01L31/18
CPC分类号： H01L31/02008 , H01L31/02013 , H01L31/0463 , Y02E10/50
摘要： The photovoltaic device can also include an insulating layer (e.g., an insulating material strip) beneath said first lead and said second lead, which may extend over the dead cell, extend over only a portion of the dead cell (i.e., the insulating layer does not extend over the entire width of the dead cell), or does not extend over the dead cell at all (e.g., ending at the scribe line separating the dead cell from the plurality of serially connected solar cells). When the insulating layer extends over at least a portion of the dead cell, the solder layer can extend over the insulating layer. Methods are also generally provided for manufacturing a photovoltaic device.
摘要翻译：光伏器件还可以包括在所述第一引线和所述第二引线之下的绝缘层（例如，绝缘材料条），所述第一引线和所述第二引线可以在死细胞上延伸，仅在死细胞的一部分上延伸（即，绝缘层不延伸在死细胞的整个宽度上），或者不延伸超过死细胞（例如，结束于将死细胞与多个串联连接的太阳能电池分开的划线）。当绝缘层在死电池的至少一部分上延伸时，焊料层可以在绝缘层上延伸。通常还提供用于制造光伏器件的方法。

57. 发明申请

US20130019948A1 STABILIZED BACK CONTACT FOR PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE 审中-公开
标题翻译：用于光伏器件的稳定的反接触器及其制造方法
公开(公告)号：US20130019948A1
公开(公告)日：2013-01-24
申请号：US13188808
申请日：2011-07-22
申请人： Scott Daniel Feldman-Peabody
发明人： Scott Daniel Feldman-Peabody
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/03925 , H01L31/073 , H01L31/1828 , Y02E10/543
摘要： Thin film photovoltaic devices including a thin film stabilization layer between the photovoltaic heterojunction and a back contact are provided. The thin film stabilization layer generally includes cadmium sulfide, but may also include copper and/or other materials. Methods are also provided for forming a thin film photovoltaic device via forming a thin film stabilization layer on a photovoltaic heterojunction (that generally overlies a transparent conductive oxide layer on a transparent substrate) and forming a back contact on the thin film stabilization layer.
摘要翻译：提供了包括光电异质结和背接触之间的薄膜稳定层的薄膜光伏器件。薄膜稳定层通常包括硫化镉，但也可以包括铜和/或其它材料。还提供了通过在光伏异质结（通常覆盖在透明基板上的透明导电氧化物层上）上形成薄膜稳定层并在薄膜稳定层上形成背接触来形成薄膜光伏器件的方法。

58. 发明授权

US08350585B2 Simultaneous QE scanning system and methods for photovoltaic devices 有权
标题翻译：光电器件同步QE扫描系统及方法
公开(公告)号：US08350585B2
公开(公告)日：2013-01-08
申请号：US13149100
申请日：2011-05-31
申请人： Scott Daniel Feldman-Peabody
发明人： Scott Daniel Feldman-Peabody
IPC分类号： G01R31/26
CPC分类号： H02S50/10
摘要： Methods for simultaneously making quantum efficiency measurements at multiple points in a photovoltaic cell are provided. A light beam (e.g., monochromatic light) can be directed to a first beam splitter, where it is split into a first reflected portion and a first passthrough portion such that the first reflected portion is directed to a first point on the photovoltaic cell. The first reflected portion can then be chopped at a first frequency between the first beam splitter and the first point. The first passthrough portion of the light beam can be reflected at a second beam splitter to a second point on the photovoltaic cell. The second reflected portion can then be chopped at a second frequency between the second beam splitter and the second point. Finally, the quantum efficiency can be calculated at both the first point and the second point. Systems are also generally provided for simultaneously making quantum efficiency measurements at multiple points in a photovoltaic cell.
摘要翻译：提供了在光伏电池中的多个点处同时进行量子效率测量的方法。光束（例如，单色光）可以被引导到第一分束器，其中它被分成第一反射部分和第一穿通部分，使得第一反射部分被引导到光伏电池上的第一点。然后可以在第一分束器和第一点之间以第一频率切割第一反射部分。光束的第一通道部分可以在第二分束器处被反射到光伏电池的第二点。然后可以在第二分束器和第二点之间以第二频率切割第二反射部分。最后，可以在第一点和第二点计算量子效率。还通常提供系统以同时在光伏电池中的多个点进行量子效率测量。

59. 发明授权

US08241930B2 Methods of forming a window layer in a cadmium telluride based thin film photovoltaic device 有权
标题翻译：在碲化镉基薄膜光伏器件中形成窗口层的方法
公开(公告)号：US08241930B2
公开(公告)日：2012-08-14
申请号：US13149454
申请日：2011-05-31
申请人： Scott Daniel Feldman-Peabody , Robert Dwayne Gossman
发明人： Scott Daniel Feldman-Peabody , Robert Dwayne Gossman
IPC分类号： H01L21/00 , H01L31/00
CPC分类号： H01L31/1836 , C23C14/06 , C23C14/3414 , H01L31/0296 , H01L31/073 , Y02E10/543
摘要： Methods are generally provided for manufacturing such thin film photovoltaic devices via sputtering a mixed phase layer from a target (e.g., at least including CdSOx, where x is 3 or 4) on a transparent conductive oxide layer and depositing a cadmium telluride layer on the mixed layer. The transparent conductive oxide layer is on a glass substrate.
摘要翻译：通常提供用于通过从透明导电氧化物层上溅射来自目标（例如，至少包括CdSO x，其中x为3或4）的混合相层并在混合物上沉积碲化镉层来制造这种薄膜光伏器件的方法层。透明导电氧化物层在玻璃基板上。

60. 发明申请

US20120061235A1 MIXED SPUTTERING TARGET OF CADMIUM SULFIDE AND CADMIUM TELLURIDE AND METHODS OF THEIR USE 审中-公开
标题翻译：锑硫化钐和碲化铝的混合喷射目标及其使用方法
公开(公告)号：US20120061235A1
公开(公告)日：2012-03-15
申请号：US12913454
申请日：2010-10-27
申请人： Scott Daniel Feldman-Peabody
发明人： Scott Daniel Feldman-Peabody
IPC分类号： C23C14/34 , B22F3/12 , B22F3/02
CPC分类号： C23C14/3414 , B22F3/02 , B22F3/12 , C22C28/00 , C22C32/0089 , C23C14/0629 , C23C14/3464 , H01L21/02406 , H01L21/02474 , H01L21/0248 , H01L21/02505 , H01L21/0251 , H01L21/02562 , H01L21/02631 , H01L31/0296 , H01L31/073 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： Mixed targets are generally disclosed for sputtering an intermixed layer of cadmium sulfide and cadmium telluride. The mixed target can include cadmium sulfide, and cadmium telluride. Methods of forming the mixed target are also provided. For example, a powdered blend can be formed from powdered cadmium sulfide and powdered cadmium telluride, and pressed into a mixed target Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer. For example, a mixed target of cadmium sulfide and cadmium telluride can be sputtered directly on a cadmium sulfide layer to form an intermixed layer, and a cadmium telluride layer can be formed on the intermixed layer.
摘要翻译：通常公开了混合靶，用于溅射硫化镉和碲化镉的混合层。混合目标物可包括硫化镉和碲化镉。还提供了形成混合目标物的方法。例如，粉状混合物可以由粉末状硫化镉和粉末状碲化镉形成，并压制成混合目标。也通常公开了制造具有混合层的碲化镉基薄膜光伏器件的方法。例如，可以将硫化镉和碲化镉的混合目标直接溅射在硫化镉层上以形成混合层，并且可以在混合层上形成碲化镉层。

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