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51. 发明申请

US20050195489A1 Lens, transmission screen, and method for manufacturing the lens 审中-公开
标题翻译：透镜，透射屏和用于制造透镜的方法
公开(公告)号：US20050195489A1
公开(公告)日：2005-09-08
申请号：US11071645
申请日：2005-03-03
申请人： Kenichi Watabe , Hiroyuki Shimotsuma , Shinichi Imai
发明人： Kenichi Watabe , Hiroyuki Shimotsuma , Shinichi Imai
IPC分类号： G03B21/62 , G02B1/04 , G02B1/10 , G02B3/00 , G02B3/08
CPC分类号： G02B3/08 , G03B21/625
摘要： A lens which has a plurality of protrusions and cavities includes a core layer having a cross sectional shape smaller than and similar to a cross sectional shape of the lens; and a skin layer, which covers the core layer, having a smaller storage modulus of elasticity than that of said core layer. The lens may further include a substrate for fixing the core layer on a surface thereof, the substrate having tabular shape being made of a light-transmitting material.
摘要翻译：具有多个突起和空腔的透镜包括具有小于并类似于透镜的横截面形状的截面形状的芯层; 以及覆盖芯层的表皮层，其具有比所述芯层更小的储存弹性模量。透镜还可以包括用于将芯层固定在其表面上的基板，该基板具有由透光材料制成的平板状。

52. 发明授权

US06881998B2 Semiconductor device and method for producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06881998B2
公开(公告)日：2005-04-19
申请号：US09960575
申请日：2001-09-24
申请人： Shinichi Imai
发明人： Shinichi Imai
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/768 , H01L21/822 , H01L23/522 , H01L27/04 , H01L29/94 , H01L27/108
CPC分类号： H01L23/5222 , H01L21/76802 , H01L29/94 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device of the present invention includes a semiconductor substrate including an active region and an isolating region provided so as to enclose the active region; a capacitance insulating film that is provided on the active region and has a boundary portion in contact with the isolating region; an upper electrode provided on the capacitance insulating film so as to be spaced away from the isolating region; an electrode pad provided on the isolating region; a lead conductive film provided over a part of the capacitance insulating film and a part of the isolating region for connecting the upper electrode and the electrode pad; and an interlayer insulating film provided over the substrate. Connection holes penetrating the interlayer insulating film to reach the electrode pad are formed, and the ratio of the total sum of the exposed areas of the electrode pad in the contact holes with respect to the total sum of the widths of the lead conductive films in the boundary portion is a certain value or less.
摘要翻译：本发明的半导体器件包括：半导体衬底，包括有源区和设置成包围有源区的隔离区; 电容绝缘膜，其设置在所述有源区上并具有与所述隔离区域接触的边界部分; 设置在电容绝缘膜上以与隔离区隔开的上电极; 设置在所述隔离区域上的电极焊盘; 设置在电容绝缘膜的一部分上的引线导电膜和用于连接上部电极和电极焊盘的隔离区域的一部分; 以及设置在基板上的层间绝缘膜。形成穿过层间绝缘膜到达电极焊盘的连接孔，并且接触孔中的电极焊盘的露出面积的总和相对于引线导电膜的宽度的总和边界部分为一定值以下。

53. 发明申请

US20050002020A1 Inspection apparatus having two sensors, method for inspecting an object, and a method for manufacturing a photolithography mask 有权
标题翻译：具有两个传感器的检查装置，用于检查物体的方法和用于制造光刻掩模的方法
公开(公告)号：US20050002020A1
公开(公告)日：2005-01-06
申请号：US10852434
申请日：2004-05-25
申请人： Hiromu Inoue , Toru Tojo , Takehiko Nomura , Shinichi Imai
发明人： Hiromu Inoue , Toru Tojo , Takehiko Nomura , Shinichi Imai
IPC分类号： G01N21/956 , G03F1/84 , H01L21/66 , G01N21/88
CPC分类号： G01N21/956 , G01N2021/95676
摘要： A photolithography mask inspection apparatus has at least two sensors. One sensor is configured to sense light transmitted through an object to be inspected, and the other sensor senses light reflected off the object. A first optical system is arranged to expose a first portion of the object with a first light beam, and a second optical system is arranged to expose a second portion of the object, spaced form the first portion, with a second light beam. A third optical system focuses the transmitted light on to the first sensor, as well as the reflected light on to the second sensor. A defect detecting circuit is also provided to detect a defect of the object, based upon image data associated with the reflected and transmitted light.
摘要翻译：光刻掩模检查装置具有至少两个传感器。一个传感器被配置为感测通过待检查对象传播的光，另一个传感器感测从物体反射的光。第一光学系统布置成用第一光束曝光物体的第一部分，并且第二光学系统布置成用第二光束暴露出与第一部分间隔开的物体的第二部分。第三光学系统将透射光聚焦到第一传感器，以及将反射光聚焦到第二传感器上。还提供缺陷检测电路，用于基于与反射和透射光相关联的图像数据来检测物体的缺陷。

54. 发明授权

US06787445B1 Method for fabricating semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06787445B1
公开(公告)日：2004-09-07
申请号：US09708085
申请日：2000-11-08
申请人： Nobuhiro Jiwari , Shinichi Imai
发明人： Nobuhiro Jiwari , Shinichi Imai
IPC分类号： H01L214763
CPC分类号： H01L21/0212 , H01L21/02274 , H01L21/3127 , H01L21/76801
摘要： A fluorine-containing organic film is deposited on a semiconductor substrate using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus. The fluorine-containing organic film is then exposed to plasma of a rare gas in the same reactor chamber to densify the fluorine-containing organic film.
摘要翻译：在等离子体处理装置的反应室中，使用含有碳氟化合物作为主要成分的原料气体，在半导体基板上沉积含氟有机膜。然后将含氟有机膜在同一反应器室中暴露于稀有气体的等离子体，以使含氟有机膜致密化。

55. 发明授权

US06500769B1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06500769B1
公开(公告)日：2002-12-31
申请号：US09708084
申请日：2000-11-08
申请人： Nobuhiro Jiwari , Shinichi Imai
发明人： Nobuhiro Jiwari , Shinichi Imai
IPC分类号： H01L2131
CPC分类号： H01L21/0212 , H01L21/022 , H01L21/02274 , H01L21/3127
摘要： A fluorine-containing organic film having a relative dielectric constant of 4 or less is deposited on a semiconductor substrate using a material gas containing fluorocarbon as a main component in a reactor chamber of a plasma processing apparatus. During the deposition of the fluorine-containing organic film, a scavenger gas for scavenging fluorine constituting the fluorocarbon is mixed in the material gas. The proportion of the mixed scavenger gas in the material gas is changed to adjust the mechanical strength and relative dielectric constant of the fluorine-containing organic film.
摘要翻译：在等离子体处理装置的反应室中，使用含有碳氟化合物作为主要成分的原料气体，在半导体基板上沉积相对介电常数为4以下的含氟有机膜。在含氟有机膜的沉积期间，在构成氟碳的氟中除去清除剂气体在原料气体中混合。改变材料气体中混合的清除气体的比例，以调节含氟有机膜的机械强度和相对介电常数。

56. 发明授权

US06214740B1 Semiconductor manufacturing apparatus 失效
标题翻译：半导体制造装置
公开(公告)号：US06214740B1
公开(公告)日：2001-04-10
申请号：US09051815
申请日：1998-04-16
申请人： Shinichi Imai , Hideo Nikoh , Nobuhiro Jiwari
发明人： Shinichi Imai , Hideo Nikoh , Nobuhiro Jiwari
IPC分类号： H01L21461
CPC分类号： H01L21/67069 , H01L21/3065
摘要： A manufacturing apparatus for semiconductor devices comprises as a halogen scavenger a silicon ring (12) having an average surface roughness of 1-1000 &mgr;m, arranged around a silicon substrate (6) on a lower electrode (3) in a reaction chamber (7); and an upper silicon element (5) as another halogen scavenger, having an average surface roughness of 1-1000 &mgr;m, arranged above the silicon substrate (6). In this apparatus, C2F6 is used as a gas to be introduced into the chamber (7) and fluorine can be effectively scavenged in the initial phase of operation, so that semiconductor devices can be aged faster than in conventional apparatus.
摘要翻译：半导体器件的制造装置包括作为卤素清除剂的平均表面粗糙度为1-1000μm的硅环（12），其布置在反应室（7）中的下电极（3）上的硅衬底（6）周围， ; 和作为另一个卤素清除剂的上硅元件（5），其平均表面粗糙度为1-1000μm，设置在硅衬底（6）的上方。在该装置中，C2F6用作被引入到室（7）中的气体，并且在初始操作阶段可以有效地清除氟，使得半导体器件的老化速度可以比传统的设备快。

57. 发明授权

US6069092A Dry etching method and semiconductor device fabrication method 有权
标题翻译：干蚀刻法和半导体器件制造方法
公开(公告)号：US6069092A
公开(公告)日：2000-05-30
申请号：US178431
申请日：1998-10-26
申请人： Shinichi Imai , Nobuhiro Jiwari
发明人： Shinichi Imai , Nobuhiro Jiwari
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/00
CPC分类号： H01L21/31116
摘要： The present invention discloses a dry etching method using a high density plasma, in which a fluorocarbon gas, whose fluorine to carbon ratio is less than 2:1, is used. Such arrangement provides improved etching selectivity ratios to the resist film. The adding of an inert gas and oxygen to such a fluorocarbon gas provides further improved etching selectivity ratios and improved etching rates.
摘要翻译：本发明公开了一种使用高密度等离子体的干蚀刻方法，其中使用氟碳比小于2:1的碳氟化合物气体。这种布置提供了与抗蚀剂膜的改进的蚀刻选择比。将惰性气体和氧气添加到这种碳氟化合物气体中提供了进一步改进的蚀刻选择比和改进的蚀刻速率。

58. 发明授权

US6057247A Method for fabricating semiconductor device and method for controlling environment inside reaction chamber of dry etching apparatus 有权
标题翻译：半导体装置的制造方法及干法蚀刻装置的反应室内环境的控制方法
公开(公告)号：US6057247A
公开(公告)日：2000-05-02
申请号：US179936
申请日：1998-10-28
申请人： Shinichi Imai , Nobuhiro Jiwari
发明人： Shinichi Imai , Nobuhiro Jiwari
IPC分类号： H01L21/311 , H01L21/00
CPC分类号： H01J37/32862 , H01J37/321 , H01L21/31116
摘要： A method for fabricating a semiconductor device according to the present invention includes the steps of: forming an oxide film on a substrate having a silicon region at least on the surface thereof; defining a resist pattern on the oxide film; placing the substrate on an electrode provided inside a reaction chamber of a plasma etching apparatus, and etching the oxide film by using plasma generated from a gas including a fluorocarbon gas with a bias voltage applied to the substrate; and removing fluorine from the reaction chamber by generating oxygen plasma inside the reaction chamber with substantially no bias voltage applied to the substrate.
摘要翻译：根据本发明的制造半导体器件的方法包括以下步骤：至少在其表面上在具有硅区域的衬底上形成氧化膜; 在氧化膜上限定抗蚀剂图案; 将基板放置在设置在等离子体蚀刻装置的反应室内部的电极上，并且通过使用由包含施加到基板的偏置电压的碳氟化合物气体的气体产生的等离子体来蚀刻氧化膜; 并且通过在反应室内产生氧等离子体，基本上没有施加偏置电压从反应室中除去氟。

59. 发明授权

US5989929A Apparatus and method for manufacturing semiconductor device 失效
标题翻译：半导体器件制造装置及方法
公开(公告)号：US5989929A
公开(公告)日：1999-11-23
申请号：US119588
申请日：1998-07-21
申请人： Hideo Nikoh , Shinichi Imai , Nobuhiro Jiwari , Satoshi Nakagawa , Shoji Matsumoto , Yoji Bito
发明人： Hideo Nikoh , Shinichi Imai , Nobuhiro Jiwari , Satoshi Nakagawa , Shoji Matsumoto , Yoji Bito
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01L21/67253 , H01J37/321 , H01J37/32422 , H01J37/32467 , H01J37/32871 , H01J37/3299 , H01L21/67069 , H01L21/67248
摘要： A reactor is composed of a lower frame of a chamber, a quartz dome, an upper electrode, an 0 ring, and the like. A lower electrode and a substrate as a workpiece to be processed thereon are disposed in the reactor. The temperature of the quartz dome is maintained at a temperature of 180.degree. C. or higher by means of a heater. Fluorocarbon gas such as C.sub.2 F.sub.6 gas or C.sub.4 F.sub.8 gas is introduced into the reactor through a gas inlet and RF power from a first RF power source is applied to an antenna coil to produce a plasma and thereby etch an oxide film on the substrate. By heating the quartz dome to a high temperature, a deposit which hinders the release of oxygen from a wall face is prevented from being attached and the deposit on the bottom of the hole which causes an etch stop during processing is removed with oxygen. This prevents the etch stop during an etching process for forming a deep hole.
摘要翻译：反应器由室的下框架，石英圆顶，上电极，O形环等构成。作为待加工的工件的下电极和基板设置在反应器中。通过加热器将石英圆顶的温度保持在180℃或更高的温度。将碳氟化合物气体如C 2 F 6气体或C 4 F 8气体通过气体入口引入反应器中，并且将来自第一RF电源的RF功率施加到天线线圈以产生等离子体，从而蚀刻衬底上的氧化物膜。通过将石英圆顶加热到高温，防止阻碍氧从壁面释放的沉积物被附着，并且用氧气除去在加工过程中导致蚀刻停止的孔的沉积物。这防止了在用于形成深孔的蚀刻工艺期间的蚀刻停止。

60. 发明授权

US5231200A Method for refining and fractionation of palm oil and apparatus therefor 失效
$Method for refining and fractionation of palm oil and apparatus therefor$
标题翻译：用于精制和分解棕榈油及其装置的方法
公开(公告)号：US5231200A
公开(公告)日：1993-07-27
申请号：US772666
申请日：1991-10-07
申请人： Yuji Kuwabara , Hiroshi Hidaka , Shinichi Imai , Ayumi Yabuuchi , Masaaki Miyabe
发明人： Yuji Kuwabara , Hiroshi Hidaka , Shinichi Imai , Ayumi Yabuuchi , Masaaki Miyabe
IPC分类号： C11B3/10 , C11B3/12 , C11B3/16 , C11B7/00
CPC分类号： C11B7/0075 , C11B3/10
摘要： A method for refining and fractionation of palm oil is disclosed. In this method, palm oil or palm fractionated oil which has been treated by physical refining is treated with an adsorbent, followed by subjecting it to dry fractionation. An apparatus for refining and fractionation of palm oil comprising means for treating palm oil or palm fractionated oil with an adsorbent and dry fractionation means connected thereto is also disclosed.

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