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51. 发明申请

US20060222036A1 Semiconductor laser device and method of fabricating the same 有权
公开(公告)号：US20060222036A1
公开(公告)日：2006-10-05
申请号：US11393891
申请日：2006-03-31
申请人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
发明人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
IPC分类号： H01S5/00 , H01S3/06 , H01S3/07
CPC分类号： H01S5/30 , H01L24/05 , H01L2224/04042 , H01L2224/48463 , H01L2224/73265 , H01L2924/00
摘要： A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

52. 发明授权

US06956884B1 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US06956884B1
公开(公告)日：2005-10-18
申请号：US09665911
申请日：2000-09-20
申请人： Yasuhiko Nomura , Nobuhiko Hayashi , Masayuki Shono
发明人： Yasuhiko Nomura , Nobuhiko Hayashi , Masayuki Shono
IPC分类号： H01L33/14 , H01L33/32 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/323 , H01S5/343
CPC分类号： H01L33/145 , B82Y20/00 , H01L33/32 , H01S5/2224 , H01S5/2226 , H01S5/34333
摘要： A second cladding layer composed of p-AlGaN and a second contact layer composed of p-GaN are formed in this order on a light emitting layer composed of a nitride based semiconductor. A predetermined region of the second cladding layer and the second contact layer is removed, to form a ridge portion. A high-resistive current blocking layer, to which impurities have been added, is formed on an upper surface of a flat portion of the second cladding layer, which remains without being removed, and on both sidewalls of the ridge portion.
摘要翻译：由p-AlGaN构成的第二覆盖层和由p-GaN构成的第二接触层依次形成在由氮化物基半导体构成的发光层上。去除第二包覆层和第二接触层的预定区域以形成脊部。在第二包覆层的平坦部分的上表面上形成有高残留杂质的高电阻阻挡层，其保持不被去除，并且在脊部的两个侧壁上形成。

53. 发明授权

US06890779B2 Nitride-based semiconductor device and method of fabricating the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US06890779B2
公开(公告)日：2005-05-10
申请号：US10936499
申请日：2004-09-09
申请人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
发明人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/285 , H01L33/00 , H01L33/32 , H01L33/40 , H01S5/343 , H01L21/00
CPC分类号： H01S5/32341 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/2201 , H01S5/305 , H01S5/34333 , H01S2304/04
摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.
摘要翻译：提供一种制造能够降低氮化物类半导体衬底等的氮面与电极之间的接触电阻的氮化物系半导体器件的方法。这种制造氮化物基半导体器件的方法包括以下步骤：蚀刻由具有纤锌矿结构的n型氮化物基半导体层或氮化物基半导体衬底构成的第一半导体层的背面，然后形成n 在第一半导体层的蚀刻后表面上的电极。

54. 发明申请

US20050029539A1 Nitride-based semiconductor device and method of fabricating the same 有权
公开(公告)号：US20050029539A1
公开(公告)日：2005-02-10
申请号：US10936499
申请日：2004-09-09
申请人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
发明人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/285 , H01L33/00 , H01L33/32 , H01L33/40 , H01S5/343
CPC分类号： H01S5/32341 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/2201 , H01S5/305 , H01S5/34333 , H01S2304/04
摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

55. 发明授权

US06791120B2 Nitride-based semiconductor device and method of fabricating the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US06791120B2
公开(公告)日：2004-09-14
申请号：US10394260
申请日：2003-03-24
申请人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
发明人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L2924
CPC分类号： H01S5/32341 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/2201 , H01S5/305 , H01S5/34333 , H01S2304/04
摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.
摘要翻译：提供一种制造能够降低氮化物类半导体衬底等的氮面与电极之间的接触电阻的氮化物系半导体器件的方法。这种制造氮化物基半导体器件的方法包括以下步骤：蚀刻由具有纤锌矿结构的n型氮化物基半导体层或氮化物基半导体衬底构成的第一半导体层的背面，然后形成n 在第一半导体层的蚀刻后表面上的电极。

56. 发明授权

US06744075B2 Nitride-based semiconductor light-emitting device and method of forming the same 失效
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US06744075B2
公开(公告)日：2004-06-01
申请号：US10244448
申请日：2002-09-17
申请人： Tsutomu Yamaguchi , Kiyoshi Oota , Yasuhiko Nomura
发明人： Tsutomu Yamaguchi , Kiyoshi Oota , Yasuhiko Nomura
IPC分类号： H01L2715
CPC分类号： H01L33/40 , H01L33/32 , H01S5/02 , H01S5/32341
摘要： A nitride-based semiconductor light-emitting device having low operating voltage with high reliability is obtained by improving adhesion of the whole of an electrode layer to a nitride-based semiconductor layer without damaging a low contact property. This nitride-based semiconductor light-emitting device comprises the nitride-based semiconductor layer formed on an active layer and the electrode layer partially formed on the nitride-based semiconductor layer. The electrode layer includes a first electrode layer containing a material having strong adhesion to the nitride-based semiconductor layer and a second electrode layer formed on the first electrode layer to have a portion coming into contact with the surface of the nitride-based semiconductor layer with weaker adhesion to the nitride-based semiconductor layer than the first electrode layer for reducing contact resistance of the electrode layer to the nitride-based semiconductor layer.
摘要翻译：通过改善整个电极层与氮化物基半导体层的粘附性而不损害低接触性能，获得具有高可靠性的低工作电压的氮化物基半导体发光器件。这种氮化物基半导体发光器件包括形成在有源层上的氮化物基半导体层和部分地形成在氮化物基半导体层上的电极层。电极层包括含有对氮化物系半导体层具有强粘附性的材料的第一电极层和形成在第一电极层上的第二电极层，以使其部分与氮化物基半导体层的表面接触，与用于降低电极层与氮化物基半导体层的接触电阻的第一电极层相比，对氮化物基半导体层的粘合力弱。

57. 发明授权

US5656540A Semiconductor crystal growing method 失效
标题翻译：半导体晶体生长方法
公开(公告)号：US5656540A
公开(公告)日：1997-08-12
申请号：US411464
申请日：1995-03-28
申请人： Yasuhiko Nomura , Shigeo Goto , Yoshitaka Morishita
发明人： Yasuhiko Nomura , Shigeo Goto , Yoshitaka Morishita
IPC分类号： H01L21/205 , H01L21/20 , H01L21/203 , H01L29/06
CPC分类号： H01L21/02395 , H01L21/02433 , H01L21/02543 , H01L21/02546 , H01L21/0262 , Y10S438/925
摘要： On a surface of a p-type GaAs (111)B substrate 11, a mesa groove is formed along a [211]A direction. TDMAAs as a group V material and TMGa as a group III material are supplied at 8.times.10.sup.-3 Pa and 8.times.10.sup.-4 Pa, respectively, to grow n-type GaAs 13 dominantly on a side surface of a mesa 12. Subsequently, the group V material is changed to metal As. As.sub.4 and MAGa are supplied at 5.times.10.sup.-3 Pa and 8.times.10.sup.-4 Pa, respectively, to grow p-type GaAs 14 only on a side surface of the GaAs 13. Then, the group V material is again changed to TDMAAs. TDMAAs and TMGa are supplied both at 8.times.10.sup.-4 Pa to grow p-type GaAs 15.
摘要翻译：在p型GaAs（111）B基板11的表面上沿[2 + E，ovs 11 + EE] A方向形成台面槽。以8×10 -3 Pa和8×10 -4 Pa分别提供作为V族材料的TDMAAs和作为III族材料的TMGa，以主要在台面12的侧表面上生长n型GaAs 13。材质改为金属As。 As4和MAGa分别以5×10 -3 Pa和8×10 -4 Pa供应，以仅在GaAs 13的侧表面上生长p型GaAs 14。然后，组V材料再次改变为TDMAA。在8×10 -4 Pa下提供TDMAAs和TMGa以生长p型GaAs 15。

58. 发明授权

US08258048B2 Semiconductor laser device and method of fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US08258048B2
公开(公告)日：2012-09-04
申请号：US12492517
申请日：2009-06-26
申请人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
发明人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
IPC分类号： H01L21/20
CPC分类号： H01S5/30 , H01L24/05 , H01L2224/04042 , H01L2224/48463 , H01L2224/73265 , H01L2924/00
摘要： A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.
摘要翻译：获得能够降低阈值电流并提高发光效率的半导体激光器件及其制造方法。该半导体激光器件包括具有主表面和半导体元件层的半导体衬底，该半导体衬底形成在半导体衬底的主表面上，其主表面相对于半导体衬底的主表面大致倾斜并且包括发射层。

59. 发明授权

US07907652B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07907652B2
公开(公告)日：2011-03-15
申请号：US12109124
申请日：2008-04-24
申请人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata
发明人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01S5/0207 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/1039 , H01S5/3201 , H01S5/32341 , H01S5/4031 , H01L2924/00014 , H01L2924/00
摘要： In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest.
摘要翻译：在该半导体激光器件中，将半导体激光元件固定在基底上，使其翘曲的凸面与基底之间的距离至少沿着与拉伸方向对应的第一方向随着半导体激光元件的翘曲而变化在与第一半导体激光元件的翘曲的凸侧面之间的距离对应的区域附近的电极层的一部分附近设置引线接合部，半导体激光元件的方向或第二方向基本上最小。

60. 发明申请

US20100219419A1 SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体元件及其制造方法
公开(公告)号：US20100219419A1
公开(公告)日：2010-09-02
申请号：US12161358
申请日：2007-08-08
申请人： Masayuki Hata , Yasuhiko Nomura
发明人： Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L33/02 , H01L21/50
CPC分类号： H01L33/483 , B82Y20/00 , H01L33/16 , H01S5/0202 , H01S5/0224 , H01S5/02268 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/2009 , H01S5/2027 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S5/34333
摘要： Provided is a semiconductor element which can suppress deterioration of element characteristics even when a semiconductor element section includes a plurality of directions having different thermal expansion coefficients within an in-plane direction. A semiconductor laser element (the semiconductor element) is provided with the semiconductor element section, which includes a direction of [1-100] and a direction of [0001] having different thermal expansion coefficients within the in-plane direction of a main surface, and a sub-mount, which includes an arrow (E) direction and an arrow (F) direction having different thermal expansion coefficients within the in-plane direction of the main surface. The semiconductor element section is bonded on the sub-mount so that the direction [1-100] of the semiconductor element section is close to the side of the arrow (E) direction than the arrow (F) direction of the sub-mount.
摘要翻译：提供了即使当半导体元件部分包括在面内方向上具有不同热膨胀系数的多个方向时，也可以抑制元件特性的劣化的半导体元件。半导体激光元件（半导体元件）具有半导体元件部，其包括在主表面的面内方向上具有不同热膨胀系数的[1-100]的方向和[0001]的方向，以及在主表面的面内方向上具有不同热膨胀系数的箭头（E）方向和箭头（F）方向的副底座。半导体元件部分接合在子安装座上，使得半导体元件部分的方向[1-100]接近于副安装座的箭头（E）方向的侧面。

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