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51. 发明授权

US08888147B2 Mounting of a container in a passenger compartment of a motor vehicle 有权
标题翻译：将容器安装在机动车辆的乘客舱中
公开(公告)号：US08888147B2
公开(公告)日：2014-11-18
申请号：US12390029
申请日：2009-02-20
申请人： Matthias Blanck , Michael Graf , Andreas Dörhöfer
发明人： Matthias Blanck , Michael Graf , Andreas Dörhöfer
IPC分类号： E05C9/10 , B60R7/04 , B60R7/00 , B60R11/00
CPC分类号： B60R7/04 , B60R2011/0007 , Y10T292/0837 , Y10T292/084
摘要： A mounting of a container in a rail pair is provided, which is disposed in a passenger compartment of a motor vehicle, and the rails of the rail pair have substantially horizontally extending guide grooves on the mutually facing sides and a projection is mounted in the container on its side facing the respective rail, and the respective guide groove has a cross section which expands from the groove base and the respective projection has a corresponding cross section which is expanded toward the container.
摘要翻译：设置容器在轨道对中的安装，其设置在机动车辆的乘客室中，并且轨道对的轨道在相互面对的侧面上具有大致水平延伸的引导槽，并且突起安装在容器中在其相对的轨道的一侧，相应的引导槽具有从槽基部扩展的横截面，并且相应的突起具有朝向容器膨胀的对应的横截面。

52. 发明授权

US08304033B2 Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles 有权
标题翻译：用多个气体喷嘴形成的气体簇离子束照射基板的方法
公开(公告)号：US08304033B2
公开(公告)日：2012-11-06
申请号：US12428973
申请日：2009-04-23
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： C23C14/10 , C23C14/48 , C23C14/14 , B05D3/06 , H01L21/263 , C23C14/08 , H01L21/423 , H01L21/425 , H01L21/265
CPC分类号： H01J37/08 , H01J37/317 , H01J2237/061 , H01J2237/0812 , H01J2237/0825 , H01J2237/0827
摘要： Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.
摘要翻译：公开了使用多喷嘴和撇渣器组件在基底上生长，改性，沉积或掺杂层的操作方法，用于在气体簇离子束（GCIB）系统中引入工艺气体混合物或多种工艺气体混合物。还公开了一种在衬底上形成浅沟槽隔离（STI）结构的方法，例如使用具有两个单独气体供应的多喷嘴系统的SiO 2 STI结构，例如提供含硅气体和含氧气体，含气。

53. 发明授权

US08271400B2 Hardware pay-per-use 有权
标题翻译：硬件一次性付费
公开(公告)号：US08271400B2
公开(公告)日：2012-09-18
申请号：US10045151
申请日：2002-01-15
申请人： Robert C. Lehr , Arif Sardar , Matthew Lane , Winthrop Reis , Cynthia Alderson , Patrick Allaire , Richard Birrell , Christopher K Buss , Paula Zimon Clawson , Michael Graf , Arthur F. Green , Monica Lasgoity , Susan C. Neidhart , Anthony Keith Towles , Carol Uno
发明人： Robert C. Lehr , Arif Sardar , Matthew Lane , Winthrop Reis , Cynthia Alderson , Patrick Allaire , Richard Birrell , Christopher K Buss , Paula Zimon Clawson , Michael Graf , Arthur F. Green , Monica Lasgoity , Susan C. Neidhart , Anthony Keith Towles , Carol Uno
IPC分类号： G06F17/00
CPC分类号： H04M15/70 , G06Q20/203 , G06Q30/04 , H04M15/00 , H04M15/41 , H04M15/73 , H04M15/80 , H04M2215/0152 , H04M2215/0164 , H04M2215/70 , H04M2215/7072
摘要： A hardware pay-per-use system and corresponding method allow computer system operators to tailor their hardware utilization to more closely match changing customer demands. The hardware pay-per-use system includes one or more hardware products and a metering mechanism coupled to at least one of the hardware products. The metering mechanism includes a hardware device separate from the hardware products. The metering mechanism acquires metrics data from the hardware products, the metrics data related to an operation at the hardware products. The metering mechanism determines data to report on the operation of the hardware products. A usage repository coupled to the metering mechanism receives the determined data and generates usage reports related to the operation of the hardware products.
摘要翻译：硬件按需付费系统和相应的方法使计算机系统运营商可以根据不同客户需求定制其硬件利用率。硬件按需付费系统包括一个或多个硬件产品和耦合到至少一个硬件产品的计量机构。计量机构包括与硬件产品分开的硬件设备。计量机制从硬件产品获取指标数据，与硬件产品上的操作有关的指标数据。计量机构确定数据来报告硬件产品的运行情况。耦合到计量机构的使用库接收确定的数据并生成与硬件产品的操作有关的使用报告。

54. 发明授权

US07973333B2 Lateral DMOS transistor and method for the production thereof 失效
标题翻译：侧面DMOS晶体管及其制造方法
公开(公告)号：US07973333B2
公开(公告)日：2011-07-05
申请号：US11730514
申请日：2007-04-02
申请人： Franz Dietz , Volker Dudek , Thomas Hoffmann , Michael Graf , Stefan Schwantes
发明人： Franz Dietz , Volker Dudek , Thomas Hoffmann , Michael Graf , Stefan Schwantes
IPC分类号： H01L29/66
CPC分类号： H01L29/66659 , H01L29/42368 , H01L29/66681 , H01L29/7816 , H01L29/7835
摘要： A lateral DMOS-transistor is provided that includes a MOS-diode made of a semi-conductor material of a first type of conductivity, a source-area of a second type of conductivity and a drain-area of a second type of conductivity which is separated from the MOS-diode by a drift region made of a semi-conductor material of a second type of conductivity which is at least partially covered by a dielectric gate layer which also covers the semi-conductor material of the MOS-diode. The dielectric gate-layer comprises a first region of a first thickness and a second region of a second thickness. The first region covers the semi-conductor material of the MOS-diode and the second region is arranged on the drift region. A transition takes place from the first thickness to the second thickness such that an edge area of the drift region which is oriented towards the MOS-diode is arranged below the second area of the gate layer. The invention also relates to a method for the production of these types of DMOS-transistors.
摘要翻译：提供了一种横向DMOS晶体管，其包括由第一导电类型的半导体材料制成的MOS二极管，第二导电类型的源极区域和第二导电类型的漏极区域，其为通过由第二导电类型的半导体材料制成的漂移区域与MOS二极管分开，所述漂移区域至少部分被还覆盖MOS二极管的半导体材料的介电栅极层覆盖。介电栅极层包括第一厚度的第一区域和第二厚度的第二区域。第一区域覆盖MOS二极管的半导体材料，第二区域布置在漂移区域上。从第一厚度到第二厚度发生转变，使得朝向MOS二极管定向的漂移区的边缘区域布置在栅极层的第二区域的下方。本发明还涉及一种用于生产这些类型的DMOS晶体管的方法。

55. 发明申请

US20100200774A1 MULTI-SEQUENCE FILM DEPOSITION AND GROWTH USING GAS CLUSTER ION BEAM PROCESSING 审中-公开
标题翻译：使用气体离子束处理的多序列膜沉积和生长
公开(公告)号：US20100200774A1
公开(公告)日：2010-08-12
申请号：US12367757
申请日：2009-02-09
申请人： Edmund Burke , John J. Hautala , Michael Graf
发明人： Edmund Burke , John J. Hautala , Michael Graf
IPC分类号： H01J37/08
CPC分类号： H01L21/67213
摘要： A method of forming a thin film on a substrate is described. The method comprises depositing a first material layer on a substrate using a first gas cluster ion beam (GCIB), the first material layer comprising a first atomic constituent, and growing a second material layer from at least a surface portion of the first material layer by introducing a second atomic constituent using a second GCIB, the second material layer comprising a reaction product of the first and second atomic constituents.
摘要翻译：描述了在基板上形成薄膜的方法。该方法包括使用第一气体团簇离子束（GCIB）在衬底上沉积第一材料层，第一材料层包括第一原子成分，并且从第一材料层的至少表面部分生长第二材料层使用第二GCIB引入第二原子成分，所述第二材料层包含所述第一和第二原子组分的反应产物。

56. 发明申请

US20090317564A1 METHOD AND SYSTEM FOR GROWING A THIN FILM USING A GAS CLUSTER ION BEAM 有权
标题翻译：使用气体聚束离子束生长薄膜的方法和系统
公开(公告)号：US20090317564A1
公开(公告)日：2009-12-24
申请号：US12144968
申请日：2008-06-24
申请人： John J. Hautala , Michael Graf , Yan Shao , Brian S. Freer
发明人： John J. Hautala , Michael Graf , Yan Shao , Brian S. Freer
IPC分类号： B05D3/14
CPC分类号： C23C14/48 , C23C14/10 , C23C14/221 , H01J27/026 , H01J2237/0812
摘要： A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.
摘要翻译：描述了在基板上形成薄膜的方法。该方法包括在减压环境中提供衬底，以及在减压环境中从加压气体混合物产生气体簇离子束（GCIB）。设置光束加速电位和光束剂量以实现高达约300埃的薄膜厚度，并且实现薄膜上表面的表面粗糙度小于约20埃。 GCIB根据光束加速电位被加速，并且根据光束剂量将加速的GCIB照射到基底的至少一部分上。通过这样做，薄膜在衬底的至少一部分上生长以获得厚度和表面粗糙度。

57. 发明申请

US20090258472A1 Semiconductor array and method for manufacturing a semiconductor array 审中-公开
标题翻译：半导体阵列及半导体阵列的制造方法
公开(公告)号：US20090258472A1
公开(公告)日：2009-10-15
申请号：US11528400
申请日：2006-09-28
申请人： Tobias Florian , Michael Graf , Stefan Schwantes
发明人： Tobias Florian , Michael Graf , Stefan Schwantes
IPC分类号： H01L21/762
CPC分类号： H01L29/7824 , H01L21/743 , H01L21/76205 , H01L21/76251 , H01L21/76286 , H01L23/535 , H01L27/1203 , H01L29/66681 , H01L29/78603 , H01L29/78639 , H01L2924/0002 , H01L2924/00
摘要： Method for manufacturing a semiconductor array, in which a conductive substrate (100), a component region (400), and an insulation layer (200), isolating the component region (400) from the conductive substrate (100), are formed, a trench (700) is etched in the component region (400) as far as the insulation layer (200), then the trench (700) is etched further as far as the conductive substrate (100), the walls (701) of the trench (700) are formed with an insulation material (710), and an electrical conductor (750, 755, 760) is introduced into the trench (700) and connected conductively to the conductive substrate (100), wherein before the trench (700) is etched, a layer sequence comprising a first oxide layer (510), a polysilicon layer (520) on top of the first oxide layer (510), and a second oxide layer (530) on top of the polysilicon layer (520) is applied to the component region (400).
摘要翻译：形成半导体阵列的方法，其中，形成将导电基板（100）与元件区域（400）隔离的导电基板（100），部件区域（400）和绝缘层（200）沟槽（700）在分隔区域（400）中被蚀刻到绝缘层（200），然后将沟槽（700）进一步蚀刻到导电基底（100），沟槽（701）的壁（700）形成有绝缘材料（710），并且电导体（750,755,760）被引入到沟槽（700）中并且导电地连接到导电衬底（100），其中在沟槽（700）之前，被蚀刻，包括在第一氧化物层（510）的顶部上的第一氧化物层（510），多晶硅层（520）和在多晶硅层（520）的顶部上的第二氧化物层（530）的层序列是施加到部件区域（400）。

58. 发明授权

US07407851B2 DMOS device with sealed channel processing 有权
标题翻译： DMOS设备密封通道处理
公开(公告)号：US07407851B2
公开(公告)日：2008-08-05
申请号：US11386316
申请日：2006-03-22
申请人： Gayle W. Miller , Irwin D. Rathbun , Stefan Schwantes , Michael Graf , Volker Dudek
发明人： Gayle W. Miller , Irwin D. Rathbun , Stefan Schwantes , Michael Graf , Volker Dudek
IPC分类号： H01L21/8238 , H01L21/38
CPC分类号： H01L21/2253 , H01L21/26586 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/42368 , H01L29/66659 , H01L29/7835
摘要： A method of fabricating an electronic device and a resulting electronic device. The method includes forming a pad oxide layer on a substrate, forming a silicon nitride layer over the pad oxide layer, and forming a top oxide layer over the silicon nitride layer. A first dopant region is then formed in a first portion of the substrate. A first portion of the top oxide layer is removed; a remaining portion of the top oxide layer is used to align a second dopant mask and a second dopant region is formed. An annealing step drives-in the dopants but oxygen diffusion to the substrate is limited by the silicon nitride layer; the silicon nitride layer thereby assures that the uppermost surface of the silicon is substantially planar in an area proximate to the dopant regions after the annealing step.
摘要翻译：一种制造电子设备的方法和由此产生的电子设备。该方法包括在衬底上形成衬垫氧化物层，在衬垫氧化物层上形成氮化硅层，并在氮化硅层上形成顶部氧化物层。然后在衬底的第一部分中形成第一掺杂区域。除去顶部氧化物层的第一部分; 使用顶部氧化物层的剩余部分来对准第二掺杂剂掩模，并且形成第二掺杂剂区域。退火步骤驱动掺杂剂，但是氧化物扩散到衬底受到氮化硅层的限制; 因此，氮化硅层确保在退火步骤之后，在靠近掺杂剂区域的区域中硅的最上表面基本上是平面的。

59. 发明申请

US20080173940A1 REDUCED ELECTRIC FIELD DMOS USING SELF-ALIGNED TRENCH ISOLATION 审中-公开
标题翻译：使用自对准TRENCH隔离的减少电场DMOS
公开(公告)号：US20080173940A1
公开(公告)日：2008-07-24
申请号：US12018721
申请日：2008-01-23
申请人： Gayle W. Miller , Volker Dudek , Michael Graf
发明人： Gayle W. Miller , Volker Dudek , Michael Graf
IPC分类号： H01L29/78
CPC分类号： H01L29/7824 , H01L21/823481 , H01L29/0653 , H01L29/0847 , H01L29/086 , H01L29/42368 , H01L29/66659 , H01L29/66689 , H01L29/7835
摘要： A method of fabricating an electronic device and the resulting electronic device. The method includes forming a gate oxide on an uppermost side of a silicon-on-insulator substrate; forming a first polysilicon layer over the gate oxide; and forming a first silicon dioxide layer over the first polysilicon layer. A first silicon nitride layer is then formed over the first silicon dioxide layer followed by a second silicon dioxide layer. Shallow trenches are etched through all preceding dielectric layers and into the SOI substrate. The etched trenches are filled with another dielectric layer (e.g., silicon dioxide) and planarized. Each of the preceding dielectric layers are removed, leaving an uppermost sidewall area of the dielectric layer exposed for contact with a later-applied polysilicon gate area. Formation of the sidewall area assures a full-field oxide thickness thereby producing a device with a reduced-electric field and a reduced capacitance between gate and drift regions.
摘要翻译：一种制造电子装置的方法和所得到的电子装置。该方法包括在绝缘体上硅衬底的最上侧形成栅极氧化物; 在所述栅极氧化物上形成第一多晶硅层; 以及在所述第一多晶硅层上形成第一二氧化硅层。然后在第一二氧化硅层上形成第一氮化硅层，接着形成第二二氧化硅层。通过所有以前的介电层蚀刻浅沟槽并进入SOI衬底。蚀刻的沟槽用另一介质层（例如二氧化硅）填充并平坦化。去除每个前述电介质层，留下电介质层的最上面的侧壁区域暴露以与稍后施加的多晶硅栅极区域接触。侧壁区域的形成确保全场氧化物厚度，从而产生具有减小的电场和栅极和漂移区域之间的减小的电容的器件。

60. 发明申请

US20080023654A1 METHOD OF REDUCING TRANSIENT WAFER TEMPERATURE DURING IMPLANTATION 审中-公开
标题翻译：在植入过程中减少瞬时波浪温度的方法
公开(公告)号：US20080023654A1
公开(公告)日：2008-01-31
申请号：US11829243
申请日：2007-07-27
申请人： Michael Graf , Louis P. Wainwright
发明人： Michael Graf , Louis P. Wainwright
IPC分类号： H01J37/08
CPC分类号： H01J37/20 , H01J37/302 , H01J37/3171 , H01J2237/2001 , H01J2237/202 , H01L21/265
摘要： The present invention is directed to a method and apparatus for providing a uniform ion implantation in a single-workpiece two-dimensional mechanical scanning ion implantation system, wherein the transient temperature operating parameter is controlled based on mechanical rotation of the workpiece by a predetermined amount between two or more scans of the workpiece through a fixed ion beam. Rotating the workpiece between scans through the fixed ion beam allows for the transient temperature to decay sufficiently for more uniform ion implantation processes to proceed.
摘要翻译：本发明涉及一种用于在单工件二维机械扫描离子注入系统中提供均匀离子注入的方法和装置，其中瞬态温度操作参数基于工件的机械旋转被控制预定量在通过固定离子束对工件进行两次或多次扫描。通过固定离子束在扫描之间旋转工件允许瞬态温度衰减足够多以使离子注入过程更均匀。

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