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    • 55. 发明授权
    • Hyperacuity sensing
    • 超敏感
    • US5541652A
    • 1996-07-30
    • US426439
    • 1995-04-21
    • Warren B. JacksonDavid K. Biegelsen
    • Warren B. JacksonDavid K. Biegelsen
    • G01B11/00H04N1/028H04N5/335H04N3/12H04N3/14
    • H04N3/1512H04N3/155H04N5/335
    • Methods and devices for implementing hyperacuity sensing are provided. The imaging device comprises a sensor array including sensor elements, each of which provides intracellular spatial intensity distribution information necessary to render images with subpixel accuracy. The method includes the step of hyperacuity sensing implemented using sensors that output signals that are dependent upon the internal intensity distribution of impinging light. The output signals are processed to determine the internal intensity distribution, which can then be used to produce a hyperacuity image. Such a hyperacuity image has enhanced definition of edges, and reduced artifacts such as jaggies and moire effects.
    • 提供了实现超敏感检测的方法和设备。 成像装置包括传感器阵列,其包括传感器元件,每个传感器阵列提供用于以亚像素精度渲染图像所需的细胞内空间强度分布信息。 该方法包括使用输出取决于入射光的内部强度分布的信号的传感器实现的超敏感度检测步骤。 处理输出信号以确定内部强度分布,然后可以使用它们来产生超吸引力图像。 这样的超视觉图像具有增强的边缘定义,并且减少伪像,例如锯齿状和莫尔效应。
    • 56. 发明授权
    • Roll-vortex plasma chemical vapor deposition system
    • 卷涡等离子体化学气相沉积系统
    • US07464663B2
    • 2008-12-16
    • US11420429
    • 2006-05-25
    • Marvin S KeshnerWarren B. JacksonKrzysztof Nauka
    • Marvin S KeshnerWarren B. JacksonKrzysztof Nauka
    • C23C16/00B05C11/00C23F1/00H01L21/306
    • C23C16/45502C23C16/4412C23C16/45578C23C16/509H01J37/32082H01J37/3244H01J37/32449
    • A system comprises a processing chamber for maintaining a hydrogen plasma at low pressure. The processing chamber has a long, wide, thin geometry to favor deposition of thin-film silicon on sheet substrates over the chamber walls. The sheet substrates are moved through between ends. A pair of opposing radio frequency electrodes above and below the workpieces are electrically driven hard to generate a flat, pancaked plasma cloud in the middle spaces of the processing chamber. A collinear series of gas injector jets pointed slightly up on a silane-jet manifold introduce 100% silane gas at high velocity from the side in order to roll the plasma cloud in a coaxial vortex. A second such silane-jet manifold is placed on the opposite side and pointed slightly down to further help roll the plasma and maintain a narrow band of silane concentration. A silane-concentration monitor observes the relative amplitudes of the spectral signatures of the silane and the hydrogen constituents in the roll-vortex plasma and outputs a process control feedback signal that is used to keep the silane in hydrogen concentration at about 6-7%.
    • 一种系统包括用于在低压下维持氢等离子体的处理室。 处理室具有长的,宽的,薄的几何形状,以有利于在室壁上的薄片基材上沉积薄膜硅。 片材基片在两端之间移动。 在工件上方和下方的一对相对的射频电极被电驱动,以在处理室的中间空间中产生平坦的,扁平的等离子体云。 在硅烷喷射歧管上略微向上突出的共线系列气体喷射器喷嘴从侧面以高速度引入100%硅烷气体,以在同轴涡流中滚动等离子体云。 第二个这样的硅烷喷射歧管放置在相反的一侧并稍微向下倾斜,以进一步帮助滚动等离子体并保持窄的硅烷浓度带。 硅烷浓度监测器观察到辊涡流等离子体中硅烷和氢组分的光谱特征的相对振幅,并输出用于将硅烷在氢浓度中保持在约6-7%的过程控制反馈信号。
    • 59. 发明授权
    • Organic-polymer memory element
    • 有机聚合物记忆元件
    • US07035140B2
    • 2006-04-25
    • US10758992
    • 2004-01-16
    • Warren B. JacksonSven Moller
    • Warren B. JacksonSven Moller
    • G11C11/34
    • G11C13/0014B82Y10/00G11C11/5664G11C13/0016H01L27/285H01L51/0037
    • Embodiments of organic-polymer-based memory elements that are stable to repeated READ access operations are disclosed. Organic-polymer-based memory elements can suffer cumulative degradation that occurs over repeated READ access operations due to the introduction of electrons into the organic-polymer layer. In general, entry of electrons into the organic-polymer layer generally lags initiation of a hole current within the organic-polymer layer following application of a voltage potential across the memory elements. Therefore, stable memory elements can be fabricated by introducing electron-blocking layers and/or limiting the duration of applied voltages during READ access operations.
    • 公开了对重复的READ访问操作稳定的基于有机聚合物的存储元件的实施方案。 由于将电子引入到有机聚合物层中,基于有机聚合物的存储元件可能遭受累积退化,这是由于重复的READ存取操作而发生的。 通常,电子进入有机 - 聚合物层通常滞后于在存储元件之间施加电压电位后有机 - 聚合物层内的空穴电流的起始。 因此,可以通过引入电子阻挡层和/或限制在READ访问操作期间施加的电压的持续时间来制造稳定的存储元件。