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    • 54. 发明授权
    • Display device having anti-reflective electrodes and/or insulating film
    • 具有抗反射电极和/或绝缘膜的显示装置
    • US4737018A
    • 1988-04-12
    • US824028
    • 1986-01-30
    • Yukihiro IwashitaKoji SumiKoichi KamijoHideaki Okamura
    • Yukihiro IwashitaKoji SumiKoichi KamijoHideaki Okamura
    • G02F1/1333G02F1/1335G02F1/1343G02F1/13
    • G02F1/133502G02F1/13439G02F1/133345
    • A display device including a pair of opposed substrates at least one of which is transparent with a display medium layer therebetween, and a transparent electrode arranged on the internal surface of the transparent substrate is provided. The thickness of the transparent electrode is about (5500/(2.times.n)).ANG. wherein n represents the refractive index thereof. When a transparent insulating film is formed on the transparent electrode, the thickness of the transparent insulating film is about (5500/(2.times.m).ANG. wherein m represents the refractive index thereof. When the refractive index of n.sub.1 of the transparent insulating film is substantially equal to the refractive index n.sub.2 of the transparent electrode, the value, 2.times.(n.sub.1 .times.d.sub.1 +n.sub.2 .times.d.sub.2) equals about 5500.ANG. wherein d.sub.1 represents the thickness of the transparent insulating film and d.sub.2 the thickness of the transparent electrode.
    • 一种显示装置,包括一对相对的基板,其中至少一个是透明的,其间具有显示介质层,并且设置在透明基板的内表面上的透明电极。 透明电极的厚度约为(5500 /(2xn))ANGSTROM,其中n表示其折射率。 当在透明电极上形成透明绝缘膜时,透明绝缘膜的厚度约为(5500 /(2xm)),其中m表示折射率,当透明绝缘膜的折射率n1基本相等时 相对于透明电极的折射率n2,2x(n1xd1 + n2xd2)的值等于约5500安培,其中d1表示透明绝缘膜的厚度,d2表示透明电极的厚度。
    • 56. 发明授权
    • Dielectric film and piezoelectric element
    • 电介质膜和压电元件
    • US07819508B2
    • 2010-10-26
    • US11392757
    • 2006-03-30
    • Akira KurikiKoji SumiHironobu KazamaMotoki TakabeMotohisa Noguchi
    • Akira KurikiKoji SumiHironobu KazamaMotoki TakabeMotohisa Noguchi
    • B41J2/45H01L41/08C04B35/00
    • H01L41/318B41J2/14233B41J2/161B41J2/1623B41J2/1629B41J2/1632B41J2/1646B41J2002/14241B41J2002/14419C23C18/1216C23C18/1283H01L41/0973H01L41/1876Y10T29/42Y10T29/435Y10T29/49155
    • A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film containing at least a lead component to form a dielectric precursor film; a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a sintering step of sintering the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140° C. to 170° C., the degreasing step is performed at a degreasing temperature of 350° C. to 450° C. and at a heating-up rate of 15 [° C./sec] or higher, and the sintering step is performed at a heating-up rate of 100 [° C./sec] to 150 [° C./sec].
    • 一种电介质膜的制造方法,其特征在于,包括:涂布包含含有构成含有至少含有铅成分的电介质膜的金属的有机金属化合物的胶体溶液以形成电介质前体膜的涂布步骤; 干燥所述电介质前体膜的干燥步骤; 脱脂步骤,使所述电介质前体膜脱脂; 以及烧结所述电介质前体膜以形成电介质膜的烧结步骤,其中所述干燥步骤包括将所述电介质前体膜加热到低于作为主要溶剂的溶剂的沸点的温度的第一干燥步骤 并将电介质前体膜在该温度下保持一定时间以干燥电介质前体膜;以及第二干燥步骤,在140℃至170℃的温度下干燥该电介质前体膜 在脱脂温度为350℃〜450℃,升温速度为15℃/秒以上的条件下进行脱脂工序,烧结工序在加热 升速率为100 [℃/秒]至150℃/秒。