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    • 55. 发明授权
    • Image decoding apparatus and image decoding method
    • 图像解码装置和图像解码方法
    • US08548061B2
    • 2013-10-01
    • US12535891
    • 2009-08-05
    • Junya Suzuki
    • Junya Suzuki
    • H04N7/26
    • H04N19/42H04N19/44
    • An image decoding apparatus, which receives a compressed image stream as an input signal and decodes the input signal, includes decoders for decoding the input signal by decoding predetermined data units. A task controller divides a decoding process for the input signal into process steps and allocates a data unit to be processed by each decoder and for each process step. Each process step has a dependency on an order of processing. The task controller detects a processing status of the decoder, and allocates a data unit and a process step to be processed to the decoder, depending on the detected processing status, a dependency between the process steps, and a dependency between frames included in the image stream.
    • 接收作为输入信号的压缩图像流并对输入信号进行解码的图像解码装置包括通过解码预定数据单元对输入信号进行解码的解码器。 任务控制器将用于输入信号的解码处理器划分为处理步骤,并且分配要由每个解码器和每个处理步骤处理的数据单元。 每个处理步骤都依赖于处理顺序。 任务控制器检测解码器的处理状态,并且根据检测到的处理状态,处理步骤之间的依赖关系以及包含在图像中的帧之间的依赖关系,分配要处理到解码器的数据单元和处理步骤 流。
    • 58. 发明授权
    • Charge drain for a MIS device
    • MIS设备的充电漏极
    • US5497020A
    • 1996-03-05
    • US284759
    • 1994-08-02
    • Junya Suzuki
    • Junya Suzuki
    • H01L21/265H01L21/302H01L21/3065H01L21/339H01L29/40H01L29/423H01L29/78H01L23/62H01L27/148
    • H01L29/42396H01L29/66954
    • A semiconductor device which has a diffusion layer region in a semiconductor body, and a MIS transistor with a gate electrode formed on the semiconductor body that is connected to the diffusion layer region. The semiconductor device is made by the steps of forming a diffusion layer region in the upper layer of the semiconductor body forming a gate electrode on the upper surface of the semiconductor body through a gate insulating film which is connected to the diffusion layer region and forming source and drain regions on the upper layer of the semiconductor body on both sides of the gate electrode so that unnecessary electrical charges on the gate electrode of the MIS transistor and transfer electrodes of the CCD device are removed.
    • 一种在半导体本体中具有扩散层区域的半导体器件,以及形成在半导体本体上的与扩散层区域连接的具有栅电极的MIS晶体管。 半导体器件通过以下步骤制成:通过栅极绝缘膜在半导体主体的上层形成扩散层区域,在半导体本体的上表面上形成栅电极,栅极绝缘膜连接到扩散层区域和形成源极 以及在栅极两侧的半导体本体的上层上的漏极区域,从而去除了MIS晶体管的栅电极和CCD器件的转移电极的不必要的电荷。