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51. 发明申请

US20070045651A1 Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device 失效
标题翻译：用于半导体发光器件的外延晶片，其制造方法和半导体发光器件
公开(公告)号：US20070045651A1
公开(公告)日：2007-03-01
申请号：US11505877
申请日：2006-08-18
申请人： Ryoji Suzuki
发明人： Ryoji Suzuki
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , B82Y20/00 , H01L33/025 , H01L33/30 , H01L33/305 , H01S5/3054 , H01S5/3072 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/34353 , H01S5/3436
摘要： A n-type GaAs buffer layer 2, a n-type GaInP buffer layer 3, a n-type AlGaInP cladding layer 4, an undoped AlGaAs guide layer 5, an AlGaAs/GaAs multiquantum well (MQW) active layer 6, a first p-type AlGaInP cladding layer 7, a p-type GaInP etching stopper layer 8, a second p-type AlGaInP cladding layer 9, a C-doped AlGaAs layer (Zn-diffusion suppressing layer) 10, a p-type GaInP intermediate layer 11, and a p-type GaAs cap layer 12 are sequentially grown on a n-type GaAs substrate 1.
摘要翻译： n型GaAs缓冲层2，n型GaInP缓冲层3，n型AlGaInP包覆层4，未掺杂的AlGaAs导向层5，AlGaAs / GaAs多量子阱（MQW）有源层6，第一p 型AlGaInP包覆层7，p型GaInP蚀刻停止层8，第二p型AlGaInP包覆层9，C掺杂AlGaAs层（Zn扩散抑制层）10，p型GaInP中间层11 ，并且在n型GaAs衬底1上顺序地生长p型GaAs覆盖层12。

52. 发明授权

US07068315B1 Solid-state imaging device, its driving method, and camera system 失效
标题翻译：固态成像装置，其驱动方法和相机系统
公开(公告)号：US07068315B1
公开(公告)日：2006-06-27
申请号：US09612752
申请日：2000-07-10
申请人： Ryoji Suzuki , Takahisa Ueno
发明人： Ryoji Suzuki , Takahisa Ueno
IPC分类号： H04N5/335 , H01L31/113 , H01L27/148 , H01L27/00
CPC分类号： H04N5/3532
摘要： In an X-Y address imaging device having an electronic shutter function, a vertical driving section includes a vertical scanning circuit and a vertical shutter scanning circuit. A horizontal driving section includes a horizontal scanning circuit and a horizontal shutter scanning circuit. The horizontal shutter scanning circuit selects, on a pixel basis, a pixel for which to perform a shutter operation from the pixels of a read pixel row selected by the vertical scanning section. After a lapse of an exposure time that is an integral multiple of a one-pixel selection period, a signal of the selected pixel is read out by scanning by the horizontal scanning circuit. This realizes an electronic shutter that enables not only an exposure time that is an integral multiple of 1H but also an exposure time having a time shorter than 1H as a unit.
摘要翻译：在具有电子快门功能的X-Y地址成像装置中，垂直驱动部分包括垂直扫描电路和垂直快门扫描电路。水平驱动部分包括水平扫描电路和水平快门扫描电路。水平快门扫描电路在像素的基础上从由垂直扫描部选择的读取像素行的像素中选择执行快门操作的像素。经过一个像素选择周期的整数倍的曝光时间后，通过水平扫描电路的扫描来读出所选择的像素的信号。这实现了电子快门，其不仅使得作为1H的整数倍的曝光时间，而且使得具有比时间短于1H的时间的曝光时间。

53. 发明授权

US06975357B1 Solid-state imaging pickup device with vertical and horizontal driving means for a unit pixel 有权
标题翻译：具有用于单位像素的垂直和水平驱动装置的固态成像拾取装置
公开(公告)号：US06975357B1
公开(公告)日：2005-12-13
申请号：US09830515
申请日：2000-08-28
申请人： Ryoji Suzuki , Takahisa Ueno , Koichi Shiono , Kazuya Yonemoto
发明人： Ryoji Suzuki , Takahisa Ueno , Koichi Shiono , Kazuya Yonemoto
IPC分类号： H04N5/20 , H01L27/146 , H01S5/22 , H01S5/223 , H01S5/323 , H04N5/235 , H04N5/335 , H04N5/341 , H04N5/353 , H04N5/355 , H04N5/357 , H04N5/363 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N5/378
CPC分类号： H04N5/3535 , H04N5/35581 , H04N5/3658
摘要： In a CMOS image pickup device in which the signal corresponding to the accumulated charge amount of each pixel is output to horizontal signal lines wired on a row basis, for example, two vertical selection transistors are provided for every horizontal signal lines, and two vertical signal lines and two vertical scan circuits are provided for every horizontal signal line, thereby separately outputting signals which are different in accumulation time and obtained by arbitrarily dividing 1 field into any number of parts on the basis of integer times of 1H.
摘要翻译：在其中将与每个像素的累积电荷量相对应的信号输出到基于行的布线的水平信号线的CMOS图像拾取装置中，例如，为每个水平信号线提供两个垂直选择晶体管，并且提供两个垂直信号为每个水平信号线提供线和两个垂直扫描电路，从而分别输出积累时间不同的信号，并且通过基于1H的整数倍将1场任意划分为任意数量的部分而获得。

54. 发明申请

US20050116251A1 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US20050116251A1
公开(公告)日：2005-06-02
申请号：US10979707
申请日：2004-11-02
申请人： Takashi Abe , Ryoji Suzuki , Keiji Mabuchi , Testuya Iizuka , Takahisa Ueno , Tsutomu Haruta
发明人： Takashi Abe , Ryoji Suzuki , Keiji Mabuchi , Testuya Iizuka , Takahisa Ueno , Tsutomu Haruta
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/374 , H01L29/45
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14643
摘要： A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.
摘要翻译：提供了一种固态成像装置，其具有为每个像素实现良好接触的布置。在固态成像装置中，在光电转换部的激活区域形成阱接触部。阱接触部分固定在其中以预定电位设置像素的光电转换部分和晶体管的阱。

55. 发明申请

US20050041127A1 Solid-state imaging element, method for driving the same, and camera system 有权
标题翻译：固态成像元件，驱动它的方法和相机系统
公开(公告)号：US20050041127A1
公开(公告)日：2005-02-24
申请号：US10944977
申请日：2004-09-20
申请人： Takahisa Ueno , Kazuya Yonemoto , Ryoji Suzuki , Koichi Shiono
发明人： Takahisa Ueno , Kazuya Yonemoto , Ryoji Suzuki , Koichi Shiono
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/3745 , H04N5/376
CPC分类号： H04N5/363 , H01L27/14609 , H01L27/14612 , H01L27/14638 , H01L27/14643 , H04N3/1512 , H04N3/155 , H04N5/335 , H04N5/341 , H04N5/374 , H04N5/3742 , H04N5/3745 , H04N5/37457
摘要： Since the great number of elements constituting a unit pixel having an amplification function would hinder reduction of pixel size, unit pixel n,m arranged in a matrix form is comprised of a photodiode, a transfer switch for transferring charges stored in the photodiode, a loating diffusion for storing charges transferred by the transfer switch, a reset switch for resetting the floating diffusion, and an amplifying transistor for outputting a signal in accordance with the potential of the floating diffusion to a vertical signal line, and by affording vertical selection pulse φVn to the drain of the reset switch to control a reset potential thereof, pixels are selected in units of rows.
摘要翻译：由于构成具有放大功能的单位像素的大量元素将阻碍像素尺寸的减小，所以以矩阵形式排列的单位像素n，m由光电二极管，用于转移存储在光电二极管中的电荷的转移开关，用于存储由转移开关转移的电荷的扩散，用于复位浮动扩散的复位开关，以及放大晶体管，用于根据浮动扩散的电位向垂直信号线输出信号，并且通过提供垂直选择脉冲phiVn至复位开关的漏极控制其复位电位，以行为单位选择像素。

56. 发明授权

US06590270B2 Solid-state pickup element and method for producing the same 失效
公开(公告)号：US06590270B2
公开(公告)日：2003-07-08
申请号：US09838095
申请日：2001-04-19
申请人： Ryoji Suzuki
发明人： Ryoji Suzuki
IPC分类号： H01L310232
CPC分类号： H01L31/0232 , H01L27/14625 , H01L27/14627 , H01L27/14645
摘要： The invention relates to a color solid-state pickup element and a method for producing the same, which can improve the sensitivity by efficiently utilizing light received by the element surface and has an excellent color reappearance property, wherein, in a solid-state pickup element having light receptive elements arrayed and formed on the surface side of a substrate, a light polarizing prism that polarizes light he that has entered from the surface side of the substrate, distributes and irradiates spectral light ha of specified wavelength bands onto a plurality of light receptive areas is provided on the substrate in which the light receptive areas are arrayed and formed; the second light condensing lens that condenses light he irradiated on the surface side of the substrate is provided on the light polarizing prism; an in-layer lens that makes the light hc condensed by the second light condensing lens into a parallel beam hb and causes it to enter the light polarizing prism is provided between the second light condensing lens and the light polarizing prism; and further the first light condensing lens that condenses the respective spectral light ha polarized by the light polarizing prism onto the light receptive areas is provided between the respective light receptive area a and the light polarizing prism.

57. 发明授权

US06377641B1 Reproduction apparatus and reproduction method 有权
标题翻译：繁殖装置和再现方法
公开(公告)号：US06377641B1
公开(公告)日：2002-04-23
申请号：US09735674
申请日：2000-12-13
申请人： Takashi Katayama , Takeshi Fujita , Masahiro Sueyoshi , Kazutaka Abe , Masaharu Matsumoto , Akihisa Kawamura , Kosuke Nishio , Ryoji Suzuki , Shinji Kojima
发明人： Takashi Katayama , Takeshi Fujita , Masahiro Sueyoshi , Kazutaka Abe , Masaharu Matsumoto , Akihisa Kawamura , Kosuke Nishio , Ryoji Suzuki , Shinji Kojima
IPC分类号： G11B2010
CPC分类号： G11B19/125
摘要： A reproduction apparatus according to the present invention includes: a signal input section for receiving an input signal having an input signal type; a synchronization signal detection section for detecting a predetermined synchronization signal in the input signal and determining the input signal type in accordance with an occurrence frequency with which an interval repeatedly occurs between adjacent instances of the predetermined synchronization signal; and a signal processing section for subjecting the input signal to a signal processing which is suitable for the determined input signal type.
摘要翻译：根据本发明的再现装置包括：信号输入部分，用于接收具有输入信号类型的输入信号; 同步信号检测部分，用于检测输入信号中的预定同步信号，并根据在预定同步信号的相邻实例之间重复发生间隔的出现频率确定输入信号类型; 以及信号处理部分，用于对输入信号进行适合于确定的输入信号类型的信号处理。

58. 发明授权

US06339215B1 Solid state image sensing device and image signal processing method of the same 有权
标题翻译：固态摄像装置和图像信号处理方法相同
公开(公告)号：US06339215B1
公开(公告)日：2002-01-15
申请号：US09546168
申请日：2000-04-11
申请人： Kazuya Yonemoto , Takahisa Ueno , Ryoji Suzuki , Koichi Shiono
发明人： Kazuya Yonemoto , Takahisa Ueno , Ryoji Suzuki , Koichi Shiono
IPC分类号： H01L2700
CPC分类号： H04N5/378 , H04N5/3745
摘要： A bias voltage must be reduced to about a half of the power source voltage in order to reserve sufficient output voltage range of a current/voltage converting circuit but, as a result, about a half voltage of the power source voltage is applied to the amplification transistor of pixel and thereby amplification factor of the pixel is lowered and linearity is deteriorated. Therefore, each potential of the signal lines is lowered and a larger voltage is applied to the amplification transistor of pixel by providing a current Miller circuit between the horizontal signal line and current/voltage converting circuit and by controlling independently each potential of the vertical signal line and horizontal signal line and the input voltage of the current/voltage converting circuit in the CMOS type image sensing device of the current output system in which the pixel signal is output to the vertical signal line as the signal current from each pixel.
摘要翻译：偏置电压必须减小到电源电压的大约一半，以便保留电流/电压转换电路的足够的输出电压范围，结果是将大约一半的电源电压施加到放大像素的晶体管，因此像素的放大系数降低，线性劣化。因此，通过在水平信号线和电流/电压转换电路之间提供电流密勒电路，并且独立地控制垂直信号线的每个电位，信号线的每个电位降低，并且将更大的电压施加到像素的放大晶体管和水平信号线以及当前输出系统的CMOS型图像感测装置中的电流/电压转换电路的输入电压，其中像素信号被输出到垂直信号线作为来自每个像素的信号电流。

59. 发明授权

US6031957A Glass wave guide element and method of manufacturing the same 失效
标题翻译：玻璃波导元件及其制造方法
公开(公告)号：US6031957A
公开(公告)日：2000-02-29
申请号：US82524
申请日：1998-05-21
申请人： Ryoji Suzuki , Hisato Uetsuka , Dai Kobayashi , Hideaki Arai , Korenori Tamura
发明人： Ryoji Suzuki , Hisato Uetsuka , Dai Kobayashi , Hideaki Arai , Korenori Tamura
IPC分类号： G02B6/13 , G02B6/12 , G02F1/01 , G02B6/10
CPC分类号： G02F1/011 , G02B2006/12107 , G02F1/0147 , G02F2001/0113 , G02F2201/30 , G02F2201/307
摘要： A glass wave guide element, which is small in size and amenable to integration and mass-production, and a method of manufacturing the glass wave guide element are provided. The glass wave guide element includes a core 3 having a diffraction grating formed on an under cladding 2, an over cladding 4 covering the core 3 and a heater 6 for changing the Bragg wavelength of the diffraction grating, the heater being arranged on the over cladding 4. The core 3 and a central portion (2B, 4B) of both claddings in a surrounding portion around the core 3 are formed in a state of being continuously separated along a longitudinal direction of the core 3 from the substrate 1 through a gap 5, and the core 3 and the surrounding portion around the core 3 are formed in a state of being spatially intermittently separated in a width direction of the core 3 from a surrounding portion (2A, 2C, 4A, 4C) of both claddings through a gap.
摘要翻译：本发明提供一种玻璃波导元件，其尺寸小，易于集成和批量生产，以及制造玻璃波导元件的方法。玻璃波导元件包括具有形成在下包层2上的衍射光栅的芯3，覆盖芯3的上包层4和用于改变衍射光栅的布拉格波长的加热器6，加热器布置在外包层芯3和围绕芯3的周围部分的两个包层的中心部分（2B，4B）形成为沿着芯3的纵向方向从衬底1通过间隙5连续分离的状态芯3和围绕芯3的周围部分形成为在芯3的宽度方向上空间间歇地从两个包层的周围部分（2A，2C，4A，4C）间隔开的状态通过间隙。

60. 发明授权

US6002123A Driving method for solid-state imaging device provided with blooming prevention structure 失效
标题翻译：具有防霜结构的固态成像装置的驱动方法
公开(公告)号：US6002123A
公开(公告)日：1999-12-14
申请号：US033605
申请日：1998-03-03
申请人： Ryoji Suzuki
发明人： Ryoji Suzuki
IPC分类号： H04N5/335 , H04N5/341 , H04N5/353 , H04N5/355 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/3745 , H01L27/00
CPC分类号： H04N5/3745 , H04N5/35527 , H04N5/353 , H04N5/3592
摘要： The invention provides a driving method suitable for a solid-state imaging device provided with a blooming prevention structure by which the dynamic range of the solid-state imaging device can be varied suitably. Each pixel section of a solid-state imaging device includes a reset gate for controlling a resetting operation for discharging accumulated charge from a charge accumulation portion of the pixel section. By performing reset gate voltage driving so that the voltage to be applied to the reset gate may vary midway in a charge accumulation period of the pixel section, the overflow level can be raised midway in the charge accumulation period of the pixel section to expand the dynamic range. Or, the voltage to be applied to a transfer gate for controlling a transferring operation of forwarding accumulated charge from a charge accumulation portion into a floating diffusion portion or the voltage to be applied to a bias gate for controlling the potential of a floating gate is varied.
摘要翻译：本发明提供一种适用于固态成像装置的驱动方法，该固态成像装置具有能够适当变化固态成像装置的动态范围的防霜结构。固态成像装置的每个像素部分包括用于控制用于从像素部分的电荷累积部分排出累积电荷的复位操作的复位门。通过执行复位栅极电压驱动，使得施加到复位栅极的电压可能在像素部分的电荷累积期间的中途变化，则可以在像素部分的电荷累积期间的中途增加溢出电平以使动态范围。或者，施加到用于控制从电荷累积部分转移到浮动扩散部分的累积电荷的转移操作的转移栅极的电压或用于控制浮置栅极的电位的施加到偏置栅极的电压是变化的。

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