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    • 53. 发明授权
    • Analog-to-digital conversion circuit having a pulse circulating portion
    • 具有脉冲循环部分的模数转换电路
    • US5396247A
    • 1995-03-07
    • US31262
    • 1993-03-15
    • Takamoto WatanabeYoshinori OhtsukaTadashi Hattori
    • Takamoto WatanabeYoshinori OhtsukaTadashi Hattori
    • H03M1/06H03K3/03H03M1/14H03M1/50H03M1/64H03M1/60
    • G04F10/005H03M1/14H03M1/0619H03M1/502H03M1/60
    • A pulse circulating circuit includes inverting circuits each for inverting an input signal and outputting an inversion of the input signal. A time of signal inversion by each of the inverting circuits varies in accordance with a power supply voltage applied thereto. One of the inverting circuits constitutes an inverting circuit for starting which is controllable in inversion operation. The pulse circulating circuit circulates a pulse signal therethrough after the inverting circuit for starting starts to operate. An input terminal subjected to an analog voltage signal is connected to power supply lines of the respective inverting circuits for applying the analog voltage signal to the inverting circuits as a power supply voltage fed thereto. A counter serves to count a number of times of complete circulation of the pulse signal through the pulse circulating circuit. A circulation position detecting device serves to detect a circulation position of the pulse signal in the pulse circulating circuit on the basis of output signals of the respective inverting circuits. A control device is operative for activating the inverting circuit for starting and thereby starting pulse circulating operation of the pulse circulating circuit, and for activating the circulation position detecting means at a moment which follows a moment of starting pulse circulating operation by a given time. An output device is operative for outputting digital data as an A/D conversion result. The A/D conversion result data has lower bits composed of output digital data of the circulation position detecting device, and higher bits composed of output digital data of the counter.
    • 脉冲循环电路包括各自用于反相输入信号并输出​​输入信号的反相的反相电路。 每个反相电路的信号反转时间根据施加到其上的电源电压而变化。 反相电路中的一个构成在反转操作中可控制的用于启动的反相电路。 脉冲循环电路在用于启动的反相电路开始运行之后循环脉冲信号。 经受模拟电压信号的输入端子连接到各个反相电路的电源线,用于将模拟电压信号作为馈送到其的电源电压施加到反相电路。 计数器用于通过脉冲循环回路计数脉冲信号的完全循环次数。 循环位置检测装置用于根据各个反相电路的输出信号检测脉冲信号在脉冲循环电路中的循环位置。 控制装置用于启动反相电路,用于启动脉冲循环电路的脉冲循环操作,从而启动循环位置检测装置,该脉冲循环位置检测装置在与给定时间一起启动脉冲循环操作的瞬间激活。 输出装置用于输出数字数据作为A / D转换结果。 A / D转换结果数据具有由循环位置检测装置的输出数字数据组成的较低位,以及由计数器的输出数字数据构成的较高位。
    • 54. 发明授权
    • Electrical discharge machine
    • 放电机
    • US5357073A
    • 1994-10-18
    • US27532
    • 1993-03-08
    • Takayuki TominagaMichio HisanagaTadashi Hattori
    • Takayuki TominagaMichio HisanagaTadashi Hattori
    • B23H7/22B23H1/04
    • B23H1/04
    • An electrode for electrical discharge machining. This spark-machining electrode improves the accuracy at which the workpiece is machined by electrical discharge machining. The electrode can dispense with a mechanism which scans the spark-machining electrode or the workpiece. A plurality of needlelike electrodes are formed on the surface of the spark-machining electrode. The needlelike electrodes are so arranged that they are present in craters created by their respective adjacent needlelike electrodes. The plural electrodes form a group. The shape of the surface of this group is formed according to the desired shape to be formed in the workpiece. Art electric discharge occurs mainly at the tips of the needlelike electrodes and so the capacitance is smaller than the capacitance of the prior art flat-plate electrode. Also, the energy of a single electric discharge can be reduced. Furthermore, electric discharge at the side surfaces of the needlelike electrodes can be suppressed because of the effect of concentration of electric field.
    • 放电加工用电极。 该火花加工电极通过放电加工提高了加工工件的精度。 电极可以省去扫描火花加工电极或工件的机构。 在火花加工电极的表面上形成多个针状电极。 针状电极被布置成使它们存在于由它们各自相邻的针状电极产生的凹坑中。 多个电极形成一组。 该组的表面的形状根据要在工件中形成的所需形状形成。 艺术放电主要发生在针状电极的尖端,因此电容小于现有技术的平板电极的电容。 此外,可以减少单个放电的能量。 此外,由于电场浓度的影响,可以抑制针状电极的侧面的放电。
    • 55. 发明授权
    • Complementary MIS transistor and a fabrication process thereof
    • 互补MIS晶体管及其制造工艺
    • US5334870A
    • 1994-08-02
    • US46699
    • 1993-04-16
    • Mitsutaka KatadaHidetoshi MuramotoSeizi FuzinoTadashi HattoriKatsunori Abe
    • Mitsutaka KatadaHidetoshi MuramotoSeizi FuzinoTadashi HattoriKatsunori Abe
    • H01L21/8238H01L27/092H01L27/02H01L29/10
    • H01L21/823814H01L27/0928Y10S257/90
    • A CMIS transistor suitable for device miniaturization, elimination of degradation of operational characteristics by hot carrier effect, and elimination of decrease of threshold voltage caused by short channel effect, includes a laterally spreading N-type diffusion region having an impurity concentration level higher than P-type and N-type wells but lower than source and drain regions, such that the N-type diffusion region extends laterally into a part located immediately below an edge of an insulating gate and has a depth smaller than a depth of the source and drain regions. The device is thereby capable of increasing the width of depletion layer at the bottom of the source and drain regions while maintaining effectiveness as a punch-through stopper. Thereby, the junction capacitance at the source and drain regions is reduced and the operational speed of the device improved in the P-channel transistor part in the device. In the N-channel transistor part, an effective suppression of punch-through is achieved because of the small diffusion depth of the N-type diffusion region. Thereby, the decrease of threshold voltage caused by the short channel effect is effectively eliminated even when the gate length of the transistor is reduced.
    • 适用于器件小型化,通过热载流子效应消除操作特性劣化以及消除由短沟道效应引起的阈值电压降低的CMIS晶体管包括杂质浓度水平高于P- 型和N型阱,但低于源极和漏极区域,使得N型扩散区域横向延伸到位于绝缘栅极的边缘正下方的部分中,并且具有比源极和漏极区域的深度更小的深度 。 因此,该装置能够增加源极和漏极区域的底部的耗尽层的宽度,同时保持作为穿通止动器的有效性。 由此,源极和漏极区域的结电容减小,器件的P沟道晶体管部分的器件的工作速度提高。 在N沟道晶体管部分中,由于N型扩散区域的扩散深度小,所以能够有效地抑制穿通。 因此,即使当晶体管的栅极长度减小时,由短沟道效应引起的阈值电压的降低也被有效地消除。