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    • 57. 发明申请
    • Drawing apparatus and method, program and recording medium
    • 绘图装置和方法,程序和记录介质
    • US20050219266A1
    • 2005-10-06
    • US11012465
    • 2004-12-15
    • Taizo KoutaniMasayuki Ishikawa
    • Taizo KoutaniMasayuki Ishikawa
    • G09G5/38G06T11/20G09G5/00G09G5/14G09G5/36G09G5/391
    • G06T11/20G09G5/14G09G2340/045
    • Accurate drawing without position displacement is performed irrespective of different aspect ratios on the transmission side of drawing information and on the reception side. In a drawing apparatus 50, a normalized coordinate transformation section 62 transforms normalized coordinates (x3, y3) transmitted via a network into rear coordinates (x2, y3) in accordance with an inverse function g1−1 of a function g1 for normalizing an aspect ratio of an image displayed on a display, and a rear coordinate transformation section 63 transforms the rear coordinates (x2, y2) into front coordinates (x1, y1) in accordance with an inverse function f1−1 of a function f1 corresponding to the aspect ratio of the image. A drawing section 67 draws an image on the screen of the display in accordance with the front coordinates (x1, y1). The invention is applicable, for example, to an application sharing drawing information.
    • 与绘图信息的发送侧和接收侧的不同宽高比无关地执行没有位置偏移的精确绘制。 在绘图装置50中,归一化坐标变换部分62将经由网络发送的归一化坐标(x 3,y 3 3)转换成后坐标(x <2> / SUB>,y 3 3)根据函数g 1的反函数g <1> -1 用于对显示器上显示的图像的纵横比进行标准化,而后坐标变换部分63将后坐标(x2> 2,y2>)转换成前坐标(x 根据对应于函数f 1的函数f 1的反函数f 1 1 - 1 来计算第1个子元素,1个&lt; 1&lt; 1&lt; 1&gt; 图像的宽高比。 绘图部分67根据前坐标(x 1,y 1,1)在显示器的屏幕上绘制图像。 本发明可以应用于例如应用程序共享图形信息。
    • 60. 发明授权
    • Semiconductor laser diode
    • 半导体激光二极管
    • US06873634B2
    • 2005-03-29
    • US09964463
    • 2001-09-28
    • Masaaki OnomuraMariko SuzukiMasayuki Ishikawa
    • Masaaki OnomuraMariko SuzukiMasayuki Ishikawa
    • H01S5/00H01S5/02H01S5/20H01S5/323H01S5/343
    • B82Y20/00H01S5/0213H01S5/0655H01S5/2004H01S5/34333
    • The present invention provides a nitride semiconductor laser by which stable high power room-temperature continuous-wave oscillation in fundamental mode is possible. A semiconductor laser diode comprising: a GaN layer; a first conductive type nitride semiconductor layer formed on said GaN layer and made of AlxGa1-xN(0.04≦x≦0.08); a first conductive type clad layer formed on said first conductive type nitride semiconductor layer and made of nitride semiconductor; a core area formed on said first conductive type clad layer and made of nitride semiconductor, said core area including an active layer to emit light by electric current injection; and a second conductive type clad layer formed on said core area and made of nitride semiconductor.
    • 本发明提供一种氮化物半导体激光器,通过该氮化物半导体激光器可以实现基模的稳定的高功率室温连续波振荡。 一种半导体激光二极管,包括:GaN层; 形成在所述GaN层上并由Al x Ga 1-x N(0.04 <= x <= 0.08)制成的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层上并由氮化物半导体制成的第一导电型覆盖层; 形成在所述第一导电型覆盖层上并由氮化物半导体构成的芯区,所述芯区包括通过电流注入发光的有源层; 以及形成在所述芯区域上并由氮化物半导体制成的第二导电型覆盖层。