专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20060131289A1 Processing method, processing apparatus, crystallization method and crystallization apparatus using pulsed laser beam 失效
标题翻译：处理方法，处理装置，结晶方法和使用脉冲激光束的结晶装置
公开(公告)号：US20060131289A1
公开(公告)日：2006-06-22
申请号：US11246265
申请日：2005-10-11
申请人： Masayuki Jyumonji , Hiroyuki Ogawa , Masato Hiramatsu , Noritaka Akita , Tomoya Kato
发明人： Masayuki Jyumonji , Hiroyuki Ogawa , Masato Hiramatsu , Noritaka Akita , Tomoya Kato
IPC分类号： B23K26/03
CPC分类号： B23K26/0853 , B23K26/03 , B23K26/032 , B23K26/0622 , B23K2101/40
摘要： In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulse-oscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.
摘要翻译：在激光加工方法和激光加工装置中，激光加工装置利用从激光束源脉冲振荡的激光束照射加工对象体，利用光电检测器对加工状态进行监视，再次对激光束源进行振荡控制检测到错误的激光照射的时刻，进行激光加工。此外，在激光结晶方法和使用脉冲振荡准分子激光器的激光结晶装置中，均匀化光学系统，光学元件和半反射镜被布置在光路中，来自半反射镜的光由光电检测器检测，并且当检测值不在预定指定值的范围内时，用激光束再次照射光强度不足的照射位置，以进行结晶。

52. 发明申请

US20060033104A1 Thin film transistor, method of manufacturing thin film transistor, and display device 审中-公开
标题翻译：薄膜晶体管，制造薄膜晶体管的方法和显示装置
公开(公告)号：US20060033104A1
公开(公告)日：2006-02-16
申请号：US11197637
申请日：2005-08-05
申请人： Yoshiaki Nakazaki , Fumiki Nakano , Genshiro Kawachi , Terunori Warabisako , Masayuki Jyumonji , Hiroyuki Ogawa , Masato Hiramatsu , Tomoya Kato
发明人： Yoshiaki Nakazaki , Fumiki Nakano , Genshiro Kawachi , Terunori Warabisako , Masayuki Jyumonji , Hiroyuki Ogawa , Masato Hiramatsu , Tomoya Kato
IPC分类号： H01L29/04 , H01L29/76 , H01L27/12
CPC分类号： H01L21/02675 , B23K26/073 , G02F1/13454 , H01L21/2026 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78618 , H01L29/78675 , H01L29/78696
摘要： There is disclosed a thin film transistor having a source region, a channel region, and a drain region in a semiconductor thin film whose crystals have grown in a transverse direction, the thin film transistor having a gate insulating film and a gate electrode in an upper part of the channel region, wherein a channel-region-side edge portion of the drain region or the source region is disposed in such a manner as to be positioned in the vicinity of an end position of lateral growth.
摘要翻译：公开了一种在半导体薄膜中具有晶体沿横向生长的源极区，沟道区和漏极区的薄膜晶体管，薄膜晶体管具有栅极绝缘膜和位于上部的栅电极沟道区域的一部分，其中漏极区域或源极区域的沟道区域侧边缘部分以这样的方式设置，以便位于横向生长的结束位置附近。

53. 发明申请

US20050217571A1 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus 失效
标题翻译：结晶装置，结晶方法，装置，光调制元件和显示装置
公开(公告)号：US20050217571A1
公开(公告)日：2005-10-06
申请号：US11087619
申请日：2005-03-24
申请人： Yukio Taniguchi , Masayuki Jyumonji , Hiroyuki Ogawa
发明人： Yukio Taniguchi , Masayuki Jyumonji , Hiroyuki Ogawa
IPC分类号： C30B1/00 , C30B3/00 , C30B5/00 , C30B13/24 , C30B28/02 , H01L21/00
CPC分类号： C30B13/24 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012 , Y10T117/1016
摘要： A first optical modulation element irradiates a non-single-crystal substance with a light beam which is to have a first light intensity distribution on the non-single crystal substance by modulating an intensity of an incident first light beam, thereby melting the substance. A second optical modulation element irradiates the substance with a light beam which is to have a second light intensity distribution on the substance by modulating an intensity of an incident second light beam, thereby melting the substance. An illumination system causes the light beam having the second light intensity distribution to enter the molten part of the substance in a period that the substance is partially molten by irradiation of the light beam having the first light intensity distribution.
摘要翻译：第一光调制元件通过调制入射的第一光束的强度，将具有第一光强度分布的光束的非单晶物质照射在非单晶物质上，由此熔化物质。第二光调制元件通过调制入射的第二光束的强度，从而使该物质熔化，从而将具有第二光强分布的光束照射在该物质上。照射系统使得具有第二光强分布的光束在物质通过具有第一光强度分布的光束的照射而部分熔融的时段内进入物质的熔融部分。

54. 发明授权

US07445674B2 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus 失效
标题翻译：结晶装置，结晶方法，装置，光调制元件和显示装置
公开(公告)号：US07445674B2
公开(公告)日：2008-11-04
申请号：US11087619
申请日：2005-03-24
申请人： Yukio Taniguchi , Masayuki Jyumonji , Hiroyuki Ogawa
发明人： Yukio Taniguchi , Masayuki Jyumonji , Hiroyuki Ogawa
IPC分类号： C30B15/26 , C30B11/00
CPC分类号： C30B13/24 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012 , Y10T117/1016
摘要： A first optical modulation element irradiates a non-single-crystal substance with a light beam which is to have a first light intensity distribution on the non-single crystal substance by modulating an intensity of an incident first light beam, thereby melting the substance. A second optical modulation element irradiates the substance with a light beam which is to have a second light intensity distribution on the substance by modulating an intensity of an incident second light beam, thereby melting the substance. An illumination system causes the light beam having the second light intensity distribution to enter the molten part of the substance in a period that the substance is partially molten by irradiation of the light beam having the first light intensity distribution.
摘要翻译：第一光调制元件通过调制入射的第一光束的强度，将具有第一光强度分布的光束的非单晶物质照射在非单晶物质上，从而熔化物质。第二光调制元件通过调制入射的第二光束的强度，从而使该物质熔化，从而将具有第二光强分布的光束照射在该物质上。照射系统使得具有第二光强分布的光束在物质通过具有第一光强度分布的光束的照射而部分熔融的时段内进入物质的熔融部分。

55. 发明申请

US20090038536A1 CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, DEVICE, OPTICAL MODULATION ELEMENT, AND DISPLAY APPARATUS 审中-公开
标题翻译：结晶装置，结晶方法，装置，光学调制元件和显示装置
公开(公告)号：US20090038536A1
公开(公告)日：2009-02-12
申请号：US12243426
申请日：2008-10-01
申请人： Yukio Taniguchi , Masayuki Jyumonji , Hiroyuki Ogawa
发明人： Yukio Taniguchi , Masayuki Jyumonji , Hiroyuki Ogawa
IPC分类号： C30B1/02
CPC分类号： C30B13/24 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012 , Y10T117/1016
摘要： A first optical modulation element irradiates a non-single-crystal substance with a light beam which is to have a first light intensity distribution on the non-single crystal substance by modulating an intensity of an incident first light beam, thereby melting the substance. A second optical modulation element irradiates the substance with a light beam which is to have a second light intensity distribution on the substance by modulating an intensity of an incident second light beam, thereby melting the substance. An illumination system causes the light beam having the second light intensity distribution to enter the molten part of the substance in a period that the substance is partially molten by irradiation of the light beam having the first light intensity distribution.
摘要翻译：第一光调制元件通过调制入射的第一光束的强度，将具有第一光强度分布的光束的非单晶物质照射在非单晶物质上，从而熔化物质。第二光调制元件通过调制入射的第二光束的强度，从而使该物质熔化，从而将具有第二光强分布的光束照射在物质上。照射系统使得具有第二光强分布的光束在物质通过具有第一光强度分布的光束的照射而部分熔融的时段内进入物质的熔融部分。

56. 发明授权

US07833349B2 Phase shifter for laser annealing 有权
标题翻译：激光退火移相器
公开(公告)号：US07833349B2
公开(公告)日：2010-11-16
申请号：US12469345
申请日：2009-05-20
申请人： Masayuki Jyumonji
发明人： Masayuki Jyumonji
IPC分类号： C30B1/08
CPC分类号： B23K26/066 , H01L21/02678 , H01L27/1285 , H01L27/1296 , Y10T117/1004
摘要： An object of the present invention is to provide a phase shifter for laser annealing which is capable of effectively preventing the sticking of particles. A first layer and a third layer are made of quartz glass, and a two-dimensional pattern of fine grooves is formed in the surfaces of the layers. The first layer and the third layer are arranged so that a second layer is sandwiched between the layers in a state in which the surfaces provided with the grooves face each other. A peripheral edge portion of the first layer is laminated on that of the third layer by a spacer. The second layer is made of an inactive gas introduced between the first layer and the third layer.
摘要翻译：本发明的目的是提供一种能够有效防止颗粒粘附的激光退火用移相器。第一层和第三层由石英玻璃制成，并且在这些层的表面中形成微细凹槽的二维图案。第一层和第三层被布置成使得在设置有沟槽的表面彼此面对的状态下，第二层被夹在层之间。第一层的外围边缘部分通过间隔件层压在第三层的边缘部分上。第二层由在第一层和第三层之间引入的惰性气体制成。

57. 发明授权

US07575834B2 Phase shifter for laser annealing 失效
标题翻译：激光退火移相器
公开(公告)号：US07575834B2
公开(公告)日：2009-08-18
申请号：US11276992
申请日：2006-03-20
申请人： Masayuki Jyumonji
发明人： Masayuki Jyumonji
IPC分类号： G03F1/00
CPC分类号： B23K26/066 , H01L21/02678 , H01L27/1285 , H01L27/1296 , Y10T117/1004
摘要： An object of the present invention is to provide a phase shifter for laser annealing which is capable of effectively preventing the sticking of particles. A first layer and a third layer are made of quartz glass, and a two-dimensional pattern of fine grooves is formed in the surfaces of the layers. The first layer and the third layer are arranged so that a second layer is sandwiched between the layers in a state in which the surfaces provided with the grooves face each other. A peripheral edge portion of the first layer is laminated on that of the third layer by a spacer. The second layer is made of an inactive gas introduced between the first layer and the third layer.
摘要翻译：本发明的目的是提供一种能够有效防止颗粒粘附的激光退火用移相器。第一层和第三层由石英玻璃制成，并且在这些层的表面中形成微细凹槽的二维图案。第一层和第三层被布置成使得在设置有沟槽的表面彼此面对的状态下，第二层被夹在层之间。第一层的外围边缘部分通过间隔件层压在第三层的边缘部分上。第二层由在第一层和第三层之间引入的惰性气体制成。

58. 发明授权

US07241702B2 Processing method for annealing and doping a semiconductor 失效
标题翻译：退火和掺杂半导体的加工方法
公开(公告)号：US07241702B2
公开(公告)日：2007-07-10
申请号：US11058344
申请日：2005-02-14
申请人： Masayuki Jyumonji
发明人： Masayuki Jyumonji
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L29/66757
摘要： A treatment method of annealing and doping a semiconductor including irradiating a semiconductor layer (13) formed on a substrate (11) with a laser beam (a), thereby melting at least a part of the semiconductor layer; irradiating a target material (2) including atoms with which the semiconductor layer is to be doped with the laser beam (a′), thereby ablating the atoms of the target material; and doping the melted semiconductor layer with the ablated atoms.
摘要翻译：包括用激光束（a）照射形成在基板（11）上的半导体层（13）的半导体退火和掺杂的处理方法，从而熔化半导体层的至少一部分; 用激光束（a'）照射包含要掺杂半导体层的原子的目标材料（2），从而烧蚀靶材料的原子; 并且用烧蚀的原子掺杂熔融的半导体层。

59. 发明申请

US20050159014A1 Processing method for annealing and doping a semiconductor 失效
标题翻译：退火和掺杂半导体的加工方法
公开(公告)号：US20050159014A1
公开(公告)日：2005-07-21
申请号：US11058344
申请日：2005-02-14
申请人： Masayuki Jyumonji
发明人： Masayuki Jyumonji
IPC分类号： H01L21/22 , H01L21/20 , H01L21/265 , H01L21/268 , H01L21/336 , H01L29/786 , H01L21/469
CPC分类号： H01L29/66757
摘要： A treatment method of annealing and doping a semiconductor including irradiating a semiconductor layer (13) formed on a substrate (11) with a laser beam (a), thereby melting at least a part of the semiconductor layer; irradiating a target material (2) including atoms with which the semiconductor layer is to be doped with the laser beam (a′), thereby ablating the atoms of the target material; and doping the melted semiconductor layer with the ablated atoms.
摘要翻译：包括用激光束（a）照射形成在基板（11）上的半导体层（13）的半导体退火和掺杂的处理方法，从而熔化半导体层的至少一部分; 用激光束（a'）照射包括要掺杂半导体层的原子的目标材料（2），从而烧蚀靶材料的原子; 并且用烧蚀的原子掺杂熔融的半导体层。

60. 发明授权

US06911717B2 Processing method and apparatus for annealing and doping semiconductor 失效
标题翻译：退火和掺杂半导体的加工方法和装置
公开(公告)号：US06911717B2
公开(公告)日：2005-06-28
申请号：US10394479
申请日：2003-03-21
申请人： Masayuki Jyumonji
发明人： Masayuki Jyumonji
IPC分类号： H01L21/22 , H01L21/20 , H01L21/265 , H01L21/268 , H01L21/336 , H01L29/786 , H01L23/552
CPC分类号： H01L29/66757
摘要： A treatment apparatus for annealing and/or doping of a semiconductor, the apparatus having an air shield chamber in which are disposed a treated plate including a substrate and a semiconductor layer formed directly or indirectly thereon, and a target material having atoms with which a semiconductor layer is to be doped. At least one laser beam is directed to at least a part of the semiconductor layer and at least a part of the target material. Where multiple beams are used, whether from a single or multiple sources, one beam is directed at the semiconductor layer and another beam is directed to the target material. Where a single beam is used, the beam is directed at the semiconductor layer and at least a portion of the laser beam is reflected by the semiconductor layer to be incident on the target material.
摘要翻译：一种用于半导体退火和/或掺杂的处理装置，该装置具有一个空气屏蔽室，其中设置有一个处理板，该处理板包括基板和直接或间接形成的半导体层，以及具有半导体层被掺杂。至少一个激光束被引导到半导体层的至少一部分和目标材料的至少一部分。在使用多个波束的情况下，无论是从单个还是多个源，一个波束被引导到半导体层，另一个波束被引导到目标材料。在使用单个光束的情况下，光束被引导到半导体层，并且激光束的至少一部分被半导体层反射以入射到目标材料上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式