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51. 发明授权

US06916593B2 Resist composition 有权
标题翻译：抗蚀组成
公开(公告)号：US06916593B2
公开(公告)日：2005-07-12
申请号：US10615683
申请日：2003-07-09
申请人： Jun Hatakeyama , Youichi Ohsawa , Takeru Watanabe
发明人： Jun Hatakeyama , Youichi Ohsawa , Takeru Watanabe
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/106
摘要： Although use of a nitrogen-containing compound as a basic compound component of a resist composition makes it possible to ease the T-top problem at an acid dissociation constant pKa falling within a range of 2 to 6, it is accompanied with the problem that the reaction, that is, acid diffusion upon use of a highly-reactive acid-labile group cannot be controlled. In order to overcome this problem, one or more basic compounds selected from those represented by the following formulas (I) to (III) and (1) to (4) are employed.
摘要翻译：尽管使用含氮化合物作为抗蚀剂组合物的碱性化合物组分可以使酸解离常数pKa在2至6的范围内缓解T顶部问题，但是伴随着如下问题：反应，即使用高反应性酸不稳定基团时的酸扩散是不能控制的。为了克服这个问题，使用一种或多种选自由下式（I）至（III）和（1）至（4）表示的化合物的碱性化合物。

52. 发明申请

US20070264596A1 Thermal acid generator, resist undercoat material and patterning process 有权
标题翻译：热酸发生器，抗蚀底漆材料和图案化工艺
公开(公告)号：US20070264596A1
公开(公告)日：2007-11-15
申请号：US11797948
申请日：2007-05-09
申请人： Youichi Ohsawa , Takeru Watanabe , Jun Hatakeyama
发明人： Youichi Ohsawa , Takeru Watanabe , Jun Hatakeyama
IPC分类号： G03C5/00
CPC分类号： G03F7/11 , G03F7/0045 , H01L21/31116 , H01L21/31138 , H01L21/31144 , Y10S430/122 , Y10S430/126
摘要： A thermal acid generator of generating an acid on heating above 100° C. has formula: CF3CH(OCOR)CF2SO3−(R1)4N+ wherein R is alkyl or aryl, R1 is hydrogen, alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl, or R1 may bond together to form a ring with N. The sulfonic acid generated possesses an ester site within molecule so that less bulky acyl groups to bulky groups may be incorporated therein. The thermal acid generator provides a sufficient acid strength, is less volatile due to a high molecular weight, and ensures film formation. Upon disposal of used resist liquid, it may be converted into low accumulative compounds.
摘要翻译：在100℃以上加热产生酸的热酸发生剂具有下式：CF 3 CH（OCOR）CF 2 SO 3，其中R是烷基或芳基，R 1或O 2，其中R是烷基或芳基，R 1， >是氢，烷基，烯基，氧代烷基，芳基，芳烷基或芳氧基烷基，或者R 1可以键合在一起以形成与N的环。所产生的磺酸在分子内具有酯位点，使得较小体积酰基可以加入到大体积基团中。热酸发生器提供足够的酸强度，由于高分子量而挥发性较低，并且确保成膜。在处理使用过的抗蚀剂液体时，可以将其转化为低浓度的化合物。

53. 发明授权

US06673511B1 Resist composition 有权
公开(公告)号：US06673511B1
公开(公告)日：2004-01-06
申请号：US09697921
申请日：2000-10-27
申请人： Jun Hatakeyama , Youichi Ohsawa , Takeru Watanabe
发明人： Jun Hatakeyama , Youichi Ohsawa , Takeru Watanabe
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/106
摘要： Although use of a nitrogen-containing compound as a basic compound component of a resist composition makes it possible to ease the T-top problem at an acid dissociation constant pKa falling within a range of 2 to 6, it is accompanied with the problem that the reaction, that is, acid diffusion upon use of a highly-reactive acid-labile group cannot be controlled. In order to overcome this problem, one or more basic compounds selected from those represented by the following formulas (I) to (III) and (1) to (4) are employed.

54. 发明授权

US08338078B2 Photoresist undercoat-forming material and patterning process 有权
标题翻译：光刻胶底涂层成型材料和图案化工艺
公开(公告)号：US08338078B2
公开(公告)日：2012-12-25
申请号：US12581625
申请日：2009-10-19
申请人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Youichi Ohsawa
发明人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Youichi Ohsawa
IPC分类号： G03F7/09 , G03F7/20 , G03F7/30 , G03F7/36 , G03C1/76
CPC分类号： G03F7/091 , C08G61/02 , C09D161/04 , G03F7/40
摘要： A material comprising a novolac resin having a C6-C30 aromatic hydrocarbon group substituted with a sulfo group or an amine salt thereof is useful in forming a photoresist undercoat. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 gas for substrate processing.
摘要翻译：包含具有被磺基取代的C6-C30芳族烃基的酚醛清漆树脂或其胺盐的材料可用于形成光致抗蚀剂底涂层。底涂层材料的消光系数足以在至少200nm的厚度下提供抗反射效果，并且具有高的耐蚀刻性，如通过用于基板处理的CF 4 / CHF 3气体的缓慢蚀刻速率所证明的。

55. 发明申请

US20100104977A1 PHOTORESIST UNDERCOAT-FORMING MATERIAL AND PATTERNING PROCESS 有权
标题翻译：光电材料成型材料和图案处理工艺
公开(公告)号：US20100104977A1
公开(公告)日：2010-04-29
申请号：US12581625
申请日：2009-10-19
申请人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Youichi Ohsawa
发明人： Jun Hatakeyama , Toshihiko Fujii , Takeru Watanabe , Youichi Ohsawa
IPC分类号： G03F7/20 , C08G75/18 , C08L81/00 , G03F7/004
CPC分类号： G03F7/091 , C08G61/02 , C09D161/04 , G03F7/40
摘要： A material comprising a novolac resin having a C6-C30 aromatic hydrocarbon group substituted with a sulfo group or an amine salt thereof is useful in forming a photoresist undercoat. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 gas for substrate processing.
摘要翻译：包含具有被磺基取代的C6-C30芳族烃基的酚醛清漆树脂或其胺盐的材料可用于形成光致抗蚀剂底涂层。底涂层材料的消光系数足以在至少200nm的厚度下提供抗反射效果，并且具有高的耐蚀刻性，如通过用于基板处理的CF 4 / CHF 3气体的缓慢蚀刻速率所证明的。

56. 发明授权

US08877422B2 Resist underlayer film composition and patterning process using the same 有权
标题翻译：抗蚀剂下层膜组合物和使用其的图案化工艺
公开(公告)号：US08877422B2
公开(公告)日：2014-11-04
申请号：US13269290
申请日：2011-10-07
申请人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Toshihiko Fujii , Takeru Watanabe , Takeshi Kinsho
发明人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Toshihiko Fujii , Takeru Watanabe , Takeshi Kinsho
IPC分类号： G03F7/004 , G03F7/26 , G03F7/09
CPC分类号： G03F7/091 , G03F7/094
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, namely, an underlayer film having optimum n-value and k-value, excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译：公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物缩合得到的聚合物，以及一种或多种更多种由下列通式（2）表示的化合物和/或其等价物。可以提供一种特别用于三层抗蚀剂工艺的下层膜组合物，其可以形成具有降低的反射率的下层膜，即具有最佳n值和k值的底层膜，优异的填充性，抗蚀性能，并且特别是在比60nm薄的高方位线中，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化工艺。

57. 发明授权

US08603732B2 Resist underlayer film-forming composition, process for forming resist underlayer film and patterning process 有权
标题翻译：抗蚀剂下层膜形成组合物，形成抗蚀剂下层膜的工艺和图案化工艺
公开(公告)号：US08603732B2
公开(公告)日：2013-12-10
申请号：US12978978
申请日：2010-12-27
申请人： Tsutomu Ogihara , Takeru Watanabe , Takeshi Kinsho , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Tsutomu Ogihara , Takeru Watanabe , Takeshi Kinsho , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
IPC分类号： G03F7/09 , G03F7/11 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： G03F7/11 , B82Y10/00 , C08G61/02 , C08G2261/3424 , G03F7/0752 , H01L21/0332 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.
摘要翻译：公开了一种抗蚀剂下层膜形成组合物，其至少包括：通过以下通式（1）表示的化合物与下列通式（2）表示的化合物缩合得到的树脂（A）：通过酸催化剂; 由通式（1）表示的化合物（B）; 富勒烯化合物（C）; 和有机溶剂。在光刻中使用的多层抗蚀剂膜中可以存在抗蚀剂下层膜组合物，该下层膜具有优异的填充基板的高度差的性能，具有耐溶剂性，并且不仅能够防止在蚀刻基板期间发生扭曲，而且能够提供优异的图案粗糙度; 通过使用该组合物形成抗蚀剂下层膜的方法; 和图案化过程。

58. 发明授权

US08168367B2 Resist composition and patterning process 有权
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US08168367B2
公开(公告)日：2012-05-01
申请号：US12457192
申请日：2009-06-03
申请人： Satoshi Watanabe , Akinobu Tanaka , Takeru Watanabe , Takeshi Kinsho
发明人： Satoshi Watanabe , Akinobu Tanaka , Takeru Watanabe , Takeshi Kinsho
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
摘要翻译：本发明涉及：抗蚀剂组合物，例如化学放大抗蚀剂组合物，除了在微制造的光刻中具有更高分辨率之外，甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形，特别是在光刻采用KrF激光，ArF激光，F2激光，超短紫外光，电子束，X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。本发明提供一种化学放大抗蚀剂组合物，其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物（除了具有包含在芳环的环结构中的胺或胺氧化物的氮原子的那些）并且不具有与氮原子共价键合的氢原子作为碱性中心。

59. 发明申请

US20120064725A1 NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS 有权
标题翻译：海绵衍生物，底漆层材料和图案处理
公开(公告)号：US20120064725A1
公开(公告)日：2012-03-15
申请号：US13227754
申请日：2011-09-08
申请人： Takeshi Kinsho , Daisuke Kori , Katsuya Takemura , Takeru Watanabe , Tsutomu Ogihara
发明人： Takeshi Kinsho , Daisuke Kori , Katsuya Takemura , Takeru Watanabe , Tsutomu Ogihara
IPC分类号： H01L21/311 , C08G8/02 , G03F7/004 , H01L21/31
CPC分类号： C08G61/10 , B05D1/40 , B05D3/007 , G03F7/00 , G03F7/091 , G03F7/20
摘要： A naphthalene derivative having formula (1) is provided wherein An and Art denote a benzene or naphthalene ring, and n is such a natural number as to provide a weight average molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.
摘要翻译：提供式（1）的萘衍生物，其中An和Art表示苯或萘环，n是这样的自然数，以提供高达100,000的重均分子量。包含萘衍生物或包含萘衍生物的聚合物的材料被旋涂以形成具有改进性能的抗蚀剂底层。通过旋涂形成的抗蚀剂底层与通过CVD形成的无机硬掩模组合的图案形成方法是可用的。

60. 发明申请

US20110183262A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS 有权
标题翻译：积极的组合物和绘图过程
公开(公告)号：US20110183262A1
公开(公告)日：2011-07-28
申请号：US13013143
申请日：2011-01-25
申请人： Wataru Kusaki , Takeshi Kinsho , Takeru Watanabe
发明人： Wataru Kusaki , Takeshi Kinsho , Takeru Watanabe
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/2041
摘要： A positive resist composition is provided comprising an acid generator, a resin component which generates resin-solubilizing groups under the action of acid so that the resin component becomes soluble in an alkaline developer, at least some resin-solubilizing groups being carboxyl groups, and a compound for activating or condensing a carboxyl group. When processed by the lithography, the resist composition forms a resist pattern having a very high resolution and good mask fidelity.
摘要翻译：提供了一种正性抗蚀剂组合物，其包含酸产生剂，在酸的作用下产生树脂增溶基团的树脂组分，使得树脂组分变得可溶于碱性显影剂，至少一些树脂增溶基团为羧基，用于活化或缩合羧基的化合物。当通过光刻处理时，抗蚀剂组合物形成具有非常高的分辨率和良好的掩模保真度的抗蚀剂图案。

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