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    • 54. 发明授权
    • Battery pack protection circuit with plural protective means, and battery pack including the protection circuit
    • 具有多个保护装置的电池组保护电路,以及包括保护电路的电池组
    • US07391185B2
    • 2008-06-24
    • US11612107
    • 2006-12-18
    • Shuji TsubakiKazuto MiyagawaYutaka Ikeda
    • Shuji TsubakiKazuto MiyagawaYutaka Ikeda
    • H01M10/46
    • H02J7/0031H02H3/085H02H5/042H02H7/18
    • A battery pack includes a first switching element which shuts off a discharging current flowing to a battery cell and a second switching element which shuts off a charging current. A positive temperature coefficient thermistor is inserted between a gate control terminal of a protective control circuit and a gate of at least one of the switching elements, and a resistor is connected between the gate and a source of the switching element. The positive temperature coefficient thermistor is thermally connected to one or more of the first and second switching elements and/or to the battery cell. Thus, an abnormally overheated state of one or more of the switching elements or the battery cell leads to an increase in the resistance of the positive temperature coefficient thermistor causing shut-off of the switching element thereby protecting the battery pack.
    • 电池组包括切断流向电池单元的放电电流的第一开关元件和关闭充电电流的第二开关元件。 正温度系数热敏电阻插入到保护控制电路的栅极控制端子和至少一个开关元件的栅极之间,并且电阻器连接在开关元件的栅极和源极之间。 正温度系数热敏电阻热连接到第一和第二开关元件和/或电池单元中的一个或多个。 因此,一个或多个开关元件或电池单元的异常过热状态导致正温度系数热敏电阻的电阻增加,导致开关元件截止从而保护电池组。
    • 55. 发明授权
    • Semiconductor memory device having internal circuit screening function
    • 具有内部电路筛选功能的半导体存储器件
    • US06654300B2
    • 2003-11-25
    • US10216751
    • 2002-08-13
    • Yutaka Ikeda
    • Yutaka Ikeda
    • G11C700
    • G11C29/028G11C29/12G11C29/12005
    • A semiconductor memory device includes an internal voltage generation circuit controlling an internal voltage supplied to an internal circuit in accordance with a reference voltage, a reference voltage generation circuit generating the reference voltage, a plurality of signal terminals for transmitting and receiving a signal to and from an outside of the semiconductor memory device, and a reference voltage change indication circuit for indicating a change of the reference voltage on the basis of a binary input signal to each of the signal terminals with respect to the reference voltage generation circuit during a test.
    • 半导体存储器件包括:内部电压产生电路,其根据参考电压控制提供给内部电路的内部电压;产生参考电压的参考电压产生电路;用于发送和接收信号的多个信号端子; 在半导体存储器件的外部,以及参考电压变化指示电路,用于在测试期间基于对于每个信号端子的二进制输入信号相对于参考电压产生电路指示参考电压的变化。
    • 56. 发明授权
    • Semiconductor device with reduced error operation caused by threshold voltage variation
    • 具有由阈值电压变化引起的误差操作降低的半导体器件
    • US06373782B1
    • 2002-04-16
    • US09778783
    • 2001-02-08
    • Yutaka Ikeda
    • Yutaka Ikeda
    • G11C806
    • G11C7/1084G11C7/1078G11C8/10H03K19/00384
    • An output circuit is driven by a first differential amplification circuit having an N-channel differential amplification stage that compares a reference voltage VREF with an input signal IN, and a second differential amplification circuit having a P-channel differential stage. An output of the first differential amplification circuit is given as the gate voltage of P-channel MOS transistors in the output circuit, and an output of the second differential amplification circuit is given as the gate voltage of N-channel MOS transistors in the output circuit. This realizes an input buffer with reduced error operations even under threshold voltage variations caused by process variations and others.
    • 输出电路由具有将参考电压VREF与输入信号IN进行比较的N沟道差分放大级的第一差分放大电路和具有P沟道差分级的第二差分放大电路驱动。 第一差分放大电路的输出作为输出电路中的P沟道MOS晶体管的栅极电压,第二差分放大电路的输出作为输出电路中的N沟道MOS晶体管的栅极电压 。 即使在由过程变化等引起的阈值电压变化的情况下,也可以实现具有减少的误差运算的输入缓冲器。
    • 59. 发明授权
    • Demagnetization circuit and components therefor
    • 退磁电路及其组件
    • US5715130A
    • 1998-02-03
    • US789423
    • 1997-01-29
    • Yutaka Ikeda
    • Yutaka Ikeda
    • H04N9/29H01F13/00
    • H04N9/29
    • A demagnetization circuit controls a demagnetization current to its demagnetization coil by means of a PTC thermistor with positive characteristic. The PTC thermistor is connected in series with and thermally coupled to a heat-sensitive switch. An NTC thermistor with negative characteristic for suppressing rush current of the voltage source is also thermally coupled to the heat-sensitive switch. After a power switch is closed, the heat-sensitive switch is opened by the heat emitted from the PTC thermistor and remains open by the heat from the NTC thermistor. The two thermistors and the heat-sensitive switch are contained in a case for easy handling and to make the component compact.
    • 退磁电路通过具有正特性的PTC热敏电阻控制到其去磁线圈的去磁电流。 PTC热敏电阻与热敏开关串联并热耦合。 具有用于抑制电压源的冲击电流的负特性的NTC热敏电阻也热耦合到热敏开关。 电源开关关闭后,热敏开关由PTC热敏电阻发出的热量打开,并通过NTC热敏电阻的热量保持开启状态。 两个热敏电阻和热敏开关被包含在容易处理的壳体中并使组件紧凑。