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    • 55. 发明授权
    • IR absorber for laser-induced thermal dye transfer
    • 用于激光诱导热染料转移的IR吸收剂
    • US5256620A
    • 1993-10-26
    • US992233
    • 1992-12-17
    • Mitchell S. BurberryLee W. TuttMichael R. Detty
    • Mitchell S. BurberryLee W. TuttMichael R. Detty
    • B41M5/382B41M5/385B41M5/388B41M5/39B41M5/392B41M5/46B41M5/035B41M5/38
    • B41M5/465B41M5/392Y10S428/913Y10S428/914Y10S430/146
    • This invention relates to a dye donor element for laser-induced thermal dye transfer comprising a support having thereon a dye layer comprising an image dye in a binder and an infrared-absorbing material associated therewith, and wherein the infrared-absorbing material is a telluro- or seleno-squarylium dye having the following formula: ##STR1## wherein: R.sub.1, R.sub.2, R.sub.3 and R.sub.4 each independently represents hydrogen or a substituted or unsubstituted alkyl, aryl or hetaryl group;R.sub.5 and R.sub.6 each independently represents hydrogen, halogen, cyano, alkoxy, aryloxy, acyloxy, aryloxycarbonyl, alkoxycarbonyl, sulfonyl, carbamoyl, acyl, acylamido, alkylamino, arylamino, or a substituted or unsubstituted alkyl, aryl or hetaryl group;X represents Se or Te; andY represents O, S, Se, Te, TeCl.sub.2 or TeBr.sub.2, with the proviso that when X and Y are both Se and R.sub.1, R.sub.2, R.sub.3 and R.sub.4 each represents t-butyl, then R.sub.5 and R.sub.6 cannot both be hydrogen at the same time; and with the second proviso that when X is Se and Y is O and R.sub.1, R.sub.2, R.sub.3 and R.sub.4 each represents t-butyl, then R.sub.5 and R.sub.6 cannot both be hydrogen at the same time.
    • 本发明涉及一种用于激光诱导的热染料转移的染料供体元件,其包括其上具有染料层的载体,所述染料层包含粘合剂中的图像染料和与其相关联的红外线吸收材料,并且其中所述红外线吸收材料是电泳 - 或具有下式的硒代方菁染料:其中:R 1,R 2,R 3和R 4各自独立地表示氢或取代或未取代的烷基,芳基或杂芳基; R 5和R 6各自独立地表示氢,卤素,氰基,烷氧基,芳氧基,酰氧基,芳氧基羰基,烷氧基羰基,磺酰基,氨基甲酰基,酰基,酰氨基,烷基氨基,芳基氨基或取代或未取代的烷基,芳基或杂芳基。 X表示Se或Te; Y表示O,S,Se,Te,TeCl 2或TeBr 2,条件是当X和Y均为Se和R1时,R2,R3和R4各自表示叔丁基,则R5和R6不能同时为氢 同时; 第二个条件是当X为Se且Y为O且R1,R2,R3和R4各自表示叔丁基时,则R5和R6不能同时为氢。
    • 58. 发明授权
    • Producing transistor including single layer reentrant profile
    • 生产晶体管包括单层折入型材
    • US08617942B2
    • 2013-12-31
    • US13218490
    • 2011-08-26
    • Shelby F. NelsonLee W. Tutt
    • Shelby F. NelsonLee W. Tutt
    • H01L21/84
    • H01L29/78642
    • A method of producing a transistor includes providing a substrate including a first electrically conductive material layer. A resist material layer is deposited over the first electrically conductive material layer. The resist material layer is patterned to expose a portion of the first electrically conductive material layer. Some of the first electrically conductive material layer is removed to create a reentrant profile in the first electrically conductive material layer and expose a portion of the substrate. The first electrically conductive material layer and at least a portion of the substrate are conformally coated with an electrically insulating material layer.
    • 制造晶体管的方法包括提供包括第一导电材料层的衬底。 在第一导电材料层上沉积抗蚀剂材料层。 图案化抗蚀剂材料层以暴露第一导电材料层的一部分。 去除一些第一导电材料层以在第一导电材料层中产生凹陷轮廓并且暴露衬底的一部分。 第一导电材料层和衬底的至少一部分共形涂覆有电绝缘材料层。
    • 60. 发明授权
    • Producing transistor including multiple reentrant profiles
    • 制造晶体管,包括多个折入型材
    • US08338291B2
    • 2012-12-25
    • US12986236
    • 2011-01-07
    • Lee W. TuttShelby F. Nelson
    • Lee W. TuttShelby F. Nelson
    • H01L21/44
    • H01L29/78642
    • A method of producing a transistor includes providing a substrate including in order a first electrically conductive material layer and a second electrically conductive material layer. A resist material layer is deposited over the second electrically conductive material layer. The resist material layer is patterned to expose a portion of the second electrically conductive material layer. Some of the second electrically conductive material layer is removed to create a reentrant profile in the second electrically conductive material layer and to expose a portion of the first electrically conductive material layer. The second electrically conductive material layer is caused to overhang the first electrically conductive material layer by removing some of the first electrically conductive material layer.
    • 一种制造晶体管的方法包括提供包括依次包括第一导电材料层和第二导电材料层的衬底。 在第二导电材料层上沉积抗蚀剂材料层。 图案化抗蚀剂材料层以暴露第二导电材料层的一部分。 去除一些第二导电材料层以在第二导电材料层中产生折入轮廓并暴露第一导电材料层的一部分。 通过去除一些第一导电材料层,使第二导电材料层悬垂在第一导电材料层上。