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    • 51. 发明授权
    • Circuit having charge compensation and an operation method of the same
    • 具有电荷补偿的电路及其操作方法
    • US5151614A
    • 1992-09-29
    • US725037
    • 1991-07-03
    • Akira YamazakiMasaki KumanoyaYasuhiro KonishiKatsumi Dosaka
    • Akira YamazakiMasaki KumanoyaYasuhiro KonishiKatsumi Dosaka
    • H01L27/04H01L21/822H03K3/356H03K17/22
    • H03K3/356008H03K17/223H01L2924/0002
    • A residual charge removing circuit connected to a node in a power-on reset pulse generating circuit for removing positive charges which remain in this node when a power supply is turned off is disclosed. This residual charge removing circuit is formed of two N-channel MOS transistors connected in series between the node and the ground, and one capacitor. Out of the two N-channel MOS transistors, the transistor near the node has a grounded gate. The capacitor is connected between a gate of the transistor, out of the two N-channel MOS transistors, which is distant from the node, and a power supply. The gate of the transistor distant from the node is connected to a connection point between the two N-channel MOS transistors. Therefore, when a supply potential lowers below a threshold voltage Vth of the MOS transistors due to the power-off, the transistor distant from the node is turned off, so that a potential of the connection point becomes -Vth owing to a discharge of negative charges from the capacitor. This turns on the transistor near the node, so that the residual charges in the node are offset by the negative charges in the connection point.
    • 公开了一种连接到上电复位脉冲发生电路中的节点的剩余电荷去除电路,用于去除当电源关闭时保留在该节点中的正电荷。 该剩余电荷去除电路由串联在节点和地之间的两个N沟道MOS晶体管和一个电容器组成。 在两个N沟道MOS晶体管中,节点附近的晶体管具有接地栅极。 电容器连接在离节点的两个N沟道MOS晶体管中的晶体管的栅极和电源之间。 远离节点的晶体管的栅极连接到两个N沟道MOS晶体管之间的连接点。 因此,当电源电压由于断电而降低到MOS晶体管的阈值电压Vth以下时,远离节点的晶体管截止,使得由于放电为负的连接点的电位变为-Vth 从电容器充电。 这使得节点附近的晶体管导通,使得节点中的剩余电荷被连接点中的负电荷抵消。
    • 58. 发明授权
    • Synchronous semiconductor memory including register for storing data input and output mode information
    • 同步半导体存储器包括用于存储数据输入和输出模式信息的寄存器
    • US06434661B1
    • 2002-08-13
    • US09640518
    • 2000-08-17
    • Yasuhiro KonishiKatsumi DosakaKouji HayanoMasaki KumanoyaAkira YamazakiHisashi Iwamoto
    • Yasuhiro KonishiKatsumi DosakaKouji HayanoMasaki KumanoyaAkira YamazakiHisashi Iwamoto
    • G06F1300
    • G11C7/1006G06F12/0893G11C7/103G11C7/1045G11C11/005G11C2207/2254
    • A semiconductor memory device is provided with a static random access memory (SRAM) serving as a cache memory and a dynamic random access memory (DRAM) serving as a main memory. A bi-directional data transfer circuit is arranged for transfer of data blocks between the SRAM and the DRAM. A command register is provided for holding command data to set operation modes such as a data output mode of the memory device. The data output mode may include a transparent mode, a latched mode and a registered mode selected depending on a data combination at data input terminals of the memory device. An output circuit for providing a selected data output mode includes an output latch circuit for latching data on read data buses in response to clock signals, and an output buffer for outputting data from the output latches to a data output terminal. The latch circuit provides data at a first clock cycle of a clock signal when the command data has a first value and provides data at a second clock cycle of the clock signal, which is later than the first clock cycle, when the command data has a second value.
    • 半导体存储器件具有用作高速缓冲存储器的静态随机存取存储器(SRAM)和用作主存储器的动态随机存取存储器(DRAM)。 双向数据传输电路被布置用于在SRAM和DRAM之间传送数据块。 提供了一个命令寄存器来保存命令数据以设置诸如存储器件的数据输出模式的操作模式。 数据输出模式可以包括根据存储器件的数据输入端子处的数据组合选择的透明模式,锁存模式和注册模式。 用于提供选择的数据输出模式的输出电路包括用于响应于时钟信号在读取数据总线上锁存数据的输出锁存电路,以及用于将数据从输出锁存器输出到数据输出端的输出缓冲器。 当命令数据具有第一值时,锁存电路以时钟信号的第一时钟周期提供数据,并且当命令数据具有第一时钟周期时,提供比第一时钟周期晚的时钟信号的第二时钟周期的数据 第二个值。
    • 60. 发明授权
    • Voltage control type delay circuit and internal clock generation circuit
using the same
    • 电压控制型延迟电路和内部时钟发生电路使用相同
    • US5731727A
    • 1998-03-24
    • US527968
    • 1995-09-14
    • Hisashi IwamotoYasuhiro Konishi
    • Hisashi IwamotoYasuhiro Konishi
    • G11C11/407G11C11/4076H03K5/13H03K19/096H03L7/081H03K5/14H03L1/00
    • H03L7/081H03K5/133
    • A control transistor is connected in parallel with an input transistor of a bias generation circuit in a voltage control delay circuit. A power supply potential Vcc is divided by voltage divider resistors to be applied to the gate of the control transistor. Reduction in the power supply potential Vcc causes reduction in a current Ib flowing to the control transistor, and a current Ic=Ia+Ib flowing to a delay time variable element. When the power supply potential Vcc is reduced, the factor of a delay time period of delay time variable elements becoming shorter due to a smaller amplitude of a clock signal is canceled with the factor of the delay time period of the delay time variable elements become longer due to a smaller current Ic flowing thereto. Therefore, variation in the delay time period can be suppressed to a low level.
    • 控制晶体管与电压控制延迟电路中的偏置产生电路的输入晶体管并联连接。 电源电位Vcc由施加到控制晶体管的栅极的分压电阻器分压。 电源电位Vcc的降低导致流向控制晶体管的电流Ib的减少,流入延迟时间可变元件的电流Ic = Ia + Ib。 当电源电位Vcc减小时,延迟时间可变元件由于时钟信号的较小振幅而变短的延迟时间的因子被延迟时间可变元件的延迟时间的因数变得更长 由于流过其的较小的电流Ic。 因此,可以将延迟时间段的变化抑制到低水平。