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51. 发明授权

US6024037A Programmable electronic sewing machine 失效
标题翻译：可编程电子缝纫机
公开(公告)号：US6024037A
公开(公告)日：2000-02-15
申请号：US84214
申请日：1998-05-26
申请人： Shinji Yoshida , Kazushi Inoue , Yoshihiro Hara , Minoru Yamaguchi
发明人： Shinji Yoshida , Kazushi Inoue , Yoshihiro Hara , Minoru Yamaguchi
IPC分类号： D05B19/08 , D05C5/06
CPC分类号： D05B19/085
摘要： A programmable electronic sewing machine includes input means for supplying input data when operated by a user, and sewing program composing means for composing a sewing program for the sewing machine on the basis of the input data supplied from the input means. The sewing program composing means composes the same sewing program on the basis of the input data supplied from the input means when the input means is operated in two or more different operating procedures.
摘要翻译：可编程电子缝纫机包括用于在用户操作时提供输入数据的输入装置和用于根据从输入装置提供的输入数据构成缝纫机缝纫程序的缝制程序组合装置。当输入装置在两个或多个不同的操作过程中操作时，缝制程序组合装置基于从输入装置提供的输入数据构成相同的缝制程序。

52. 发明授权

US5923950A Method of manufacturing a semiconductor light-emitting device 失效
标题翻译：制造半导体发光装置的方法
公开(公告)号：US5923950A
公开(公告)日：1999-07-13
申请号：US872154
申请日：1997-06-10
申请人： Akihiko Ishibashi , Yuzaburo Ban , Yoshihiro Hara , Nobuyuki Uemura , Masahiro Kume
发明人： Akihiko Ishibashi , Yuzaburo Ban , Yoshihiro Hara , Nobuyuki Uemura , Masahiro Kume
IPC分类号： H01L21/20 , H01L21/205 , H01L33/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02661 , Y10S438/931
摘要： A method for manufacturing a semiconductor is disclosed. The method involves soaking a semiconductor substrate that consists of SiC for ten minutes in a buffered hydrofluoric acid, thereby etching the oxidized film formed on the surface of the semiconductor substrate. Then, TMA, NH.sub.3, TMG, and hydrogen for carrier are supplied at the rates of 10 .mu.mol/min., 2.5 L/min., and 2 L/min., respectively, to the semiconductor substrate at a temperature of 1090.degree. C. by using MOVPE. A buffer layer that consists of a single crystal AlN and has a thickness of about 15 nm is grown on the main surface of the semiconductor substrate. After lowering the temperature to 800.degree. C., TMA, TMG, TMI, and NH.sub.3 are supplied at the rates of 0.2 .mu.mol/min., 2 .mu.mol/min., 20 .mu.mol/min., and 5 L/min., respectively. A single crystal layer which consists of AlGaInN is thus grown on the buffer layer.
摘要翻译：公开了半导体制造方法。该方法包括将由SiC组成的半导体衬底浸入缓冲的氢氟酸中10分钟，从而蚀刻形成在半导体衬底的表面上的氧化膜。然后，在1090℃的温度下分别以10微摩尔/分钟，2.5L /分和2L /分钟的速度向载体提供TMA，NH 3，TMG和氢气。 C.使用MOVPE。在半导体衬底的主表面上生长由单晶AlN构成并具有约15nm的厚度的缓冲层。将温度降至800℃后，以0.2微摩尔/分钟，2微摩尔/分钟，20微摩尔/分钟和5升/分钟的速率供给TMA，TMG，TMI和NH 3 。，分别。因此，由AlGaInN构成的单晶层在缓冲层上生长。

53. 发明授权

US5885334A Polishing fluid composition and polishing method 失效
标题翻译：抛光液组成和抛光方法
公开(公告)号：US5885334A
公开(公告)日：1999-03-23
申请号：US857366
申请日：1997-05-15
申请人： Tetsuo Suzuki , Yoshihiro Hara
发明人： Tetsuo Suzuki , Yoshihiro Hara
IPC分类号： C09G1/02 , C09K3/14 , C09K13/04
CPC分类号： C09G1/02 , C09K3/1463
摘要： The present invention provides a polishing fluid composition which can effectively polish a surface of a semiconductor silicon wafer or a surface of a film comprising silicon to be formed on silicon wafers with a markedly reduced amount of colloidal silica to be used as abrasives, or a polishing fluid composition which is particularly useful for a polishing step after removal of an oxide layer in a two-step polishing method. The former polishing fluid composition comprises an alkaline suspension which contains a water-soluble silicic acid component, colloidal silica and an alkaline component, and which has a pH value of 8.5 to 13. Meanwhile, the latter polishing fluid composition comprises an alkaline solution which contains a water-soluble silicic acid component and an alkaline component, and which has a pH value of 8.5 to 13; and is substantially free of abrasive particles.
摘要翻译：本发明提供了一种抛光液组合物，其可以有效地抛光半导体硅晶片的表面或包含待形成硅晶片的表面，其中硅晶片的显微减少量用作研磨剂，或抛光流体组合物，其特别可用于在两步抛光方法中除去氧化物层之后的抛光步骤。前述抛光液组合物含有含有水溶性硅酸成分，胶体二氧化硅和碱性成分的碱性悬浮液，其pH值为8.5〜13。另外，后者的研磨液组合物含有碱溶液，其含有水溶性硅酸成分和碱性成分，pH值为8.5〜13，并且基本上不含磨料颗粒。

54. 发明授权

US5855735A Process for recovering substrates 失效
标题翻译：回收底物的方法
公开(公告)号：US5855735A
公开(公告)日：1999-01-05
申请号：US538265
申请日：1995-10-03
申请人： Satoru Takada , Hidetoshi Inoue , Yoshihiro Hara
发明人： Satoru Takada , Hidetoshi Inoue , Yoshihiro Hara
IPC分类号： H01L21/66 , B24B9/06 , B24B21/00 , B24B37/04 , H01L21/02 , H01L21/30 , H01L21/304 , C23F3/00
CPC分类号： H01L21/02032 , B24B21/00 , B24B37/04 , B24B9/065 , H01L21/02079 , H01L21/30
摘要： A process comprising removing surface layer materials from the wafer by inducing micro-fractures in the surface using a rotating pad and an abrasive slurry until all of the surface layer materials are removed; and chemically etching the surfaces of the wafer until all micro-fractures are removed therefrom. Edge materials are removed by abrasive tape. Wafer thickness reduction during recycling is less than 30 microns per cycle. One of the front and back surfaces of the wafer substrate is polished, any dots or grooves being on the non-polished side. The abrasive slurry contains more than 6 volume percent abrasive particles, and the abrasive slurry has a viscosity greater than about 2 cP at ambient temperature. The preferred pad comprises an organic polymer having a hardness greater than about 40 on the Shore D scale, optimally a polyurethane. The pressure of the pad against the wafer surface preferably does not exceed about 3 psi. Preferably, the chemical etching solution contains potassium hydroxide. An acidic solution can then be applied to the wafer surface. The reclaimed semiconductor wafer can be a silicon wafer having a matted side having etch pits which does not exceed 20 microns in width, an average roughness not exceeding 0.5 microns and a peak-to-valley roughness not exceeding 5 microns. Any laser markings from the original wafer are present on the matted side of the wafer.
摘要翻译：一种方法，其包括通过使用旋转垫和研磨剂浆料在表面中诱导微裂纹从晶片去除表面层材料，直到除去所有表面层材料; 并化学蚀刻晶片的表面，直到从中除去所有的微裂缝。边缘材料由砂带除去。回收期间的晶片厚度减少每周期小于30微米。对晶片基板的正面和背面之一进行抛光，任何点或凹槽位于非抛光侧。研磨浆料含有超过6体积％的磨料颗粒，研磨浆料在环境温度下的粘度大于约2cP。优选的垫包括在肖氏D刻度上硬度大于约40的有机聚合物，最佳地是聚氨酯。衬垫对晶片表面的压力优选不超过约3psi。优选地，化学蚀刻溶液含有氢氧化钾。然后可以将酸性溶液施加到晶片表面。回收的半导体晶片可以是具有无光泽面的蚀刻凹坑的硅晶片，其宽度不超过20微米，平均粗糙度不超过0.5微米，峰 - 谷粗糙度不超过5微米。来自原始晶片的任何激光标记存在于晶片的无光泽侧。

55. 发明授权

US08836096B2 Image sensor unit and image sensor apparatus 有权
标题翻译：图像传感器单元和图像传感器装置
公开(公告)号：US08836096B2
公开(公告)日：2014-09-16
申请号：US13398468
申请日：2012-02-16
申请人： Akira Kosaka , Masataka Hamada , Satoshi Yokota , Yoshihiro Hara , Yasutaka Tanimura
发明人： Akira Kosaka , Masataka Hamada , Satoshi Yokota , Yoshihiro Hara , Yasutaka Tanimura
IPC分类号： H01L31/0232 , H04N5/232 , H04N5/225 , H01L23/00 , H01L31/0203
CPC分类号： H04N5/23248 , H01L24/73 , H01L31/0203 , H01L31/0232 , H01L2224/05554 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/8592 , H01L2924/14 , H01L2924/1461 , H01L2924/3025 , H04N5/2257 , H04N5/23258 , H04N5/2328 , H01L2924/00014 , H01L2924/00
摘要： An image sensor unit includes a fixed substrate, a movable substrate, an actuate section including an actuator for moving the movable substrate against the fixed substrate, an image sensor having an imaging surface on a front surface of the image sensor, and at least, a part of a rear surface of the image sensor being directly fixed onto the movable substrate, an external electrical connecting member for conducting a transmission and reception of signals between the actuate section and the image sensor and an outside of the image sensor unit, and an internal electrical connecting member electrically connects the actuate section, the image sensor and the external connection wiring, wherein the actuate section, the image sensor, the internal connection wiring and a part of the external connection wiring are sealed into the same space.
摘要翻译：图像传感器单元包括固定基板，可移动基板，致动部分，其包括用于将可动基板抵靠固定基板移动的致动器，具有在图像传感器的前表面上的成像表面的图像传感器，并且至少一个图像传感器的后表面的一部分直接固定在可动基板上，用于在致动部分和图像传感器之间以及图像传感器单元的外部进行信号传输和接收的外部电连接部件，以及内部电连接构件电连接致动部分，图像传感器和外部连接布线，其中致动部分，图像传感器，内部连接布线和外部连接布线的一部分被密封在相同的空间中。

56. 发明授权

US08434303B2 Driving device made of shape-memory alloy 失效
标题翻译：由形状记忆合金制成的驱动装置
公开(公告)号：US08434303B2
公开(公告)日：2013-05-07
申请号：US12812572
申请日：2009-01-14
申请人： Yasuhiro Honda , Yasutaka Tanimura , Natsuko Shiota , Yoshihiro Hara
发明人： Yasuhiro Honda , Yasutaka Tanimura , Natsuko Shiota , Yoshihiro Hara
IPC分类号： F01B29/10 , H02N10/00 , G02B7/04
CPC分类号： F03G7/065 , G02B7/08
摘要： A storing section (70) stores a second initial contact instruction value, which is predefined as an instruction value for positioning a movable portion (5) to a second contact position where the movable portion (5) is contacted with a stopper (8), and an initial standby instruction value, which is predefined as an instruction value for positioning the movable portion (5) to a specified standby position within a moving range of the movable portion (5). A correcting section (42) calculates an actual standby instruction value by correcting the initial standby instruction value, based on a second actual contact instruction value obtained when a contact detection section (41) has detected that the movable portion (5) is positioned to the second contact position, and the second initial contact instruction value. A setting section (43) sets a standby position corresponding to the actual standby instruction value, as an actual standby position of the movable portion (5).
摘要翻译：存储部（70）存储第二初始接触指示值，其被预先定义为用于将可动部（5）定位到可动部（5）与止动件（8）接触的第二接触位置的指示值，以及初始待机指令值，其被预先定义为用于将可动部分（5）定位在可动部分（5）的移动范围内的指定待机位置的指令值。校正部件（42）基于当接触检测部件（41）检测到可动部分（5）位于所述第二实际接触指令值时获得的第二实际接触指令值，通过校正初始待机指令值来计算实际待机指令值第二接触位置和第二初始接触指令值。设定部（43）将与实际待机指示值对应的待机位置设定为可动部（5）的实际备用位置。

57. 发明授权

US08174608B2 Drive unit and drive module 有权
标题翻译：驱动单元和驱动模块
公开(公告)号：US08174608B2
公开(公告)日：2012-05-08
申请号：US12114225
申请日：2008-05-02
申请人： Yoshihiro Hara , Takeshi Aoi , Natsuko Shiota , Yasutaka Tanimura
发明人： Yoshihiro Hara , Takeshi Aoi , Natsuko Shiota , Yasutaka Tanimura
IPC分类号： G03B13/00 , G03B9/08 , G03B17/38 , H02N10/00
CPC分类号： G02B7/08 , G03B3/10 , G03B5/00 , G03B9/14 , G03B2205/0015 , G03B2205/0076
摘要： A drive unit and drive module which use a shape memory alloy as a drive source to move a driven member, and which can drive at a high speed, independently of the ambient temperature and the position of the driven member. The timing of moving the driven member is controlled based on the position to which the driven member is moved, and based on the settling time for the driven member moved to that position to settle at that position, thus, the driven section can be moved in the minimum drive time, and this arrangement provides the drive unit and drive module that can drive at a high speed, independently of the ambient temperature and the position of the driven member.
摘要翻译：驱动单元和驱动模块，其使用形状记忆合金作为驱动源来移动从动构件，并且可以独立于环境温度和从动构件的位置以高速驱动。基于从动构件移动的位置来控制从动构件的移动定时，并且基于移动到该位置的从动构件的稳定时间在该位置处稳定，从而可以将被驱动部分移动最小驱动时间，并且这种布置提供了驱动单元和驱动模块，该驱动单元和驱动模块可以独立于环境温度和从动构件的位置以高速驱动。

58. 发明授权

US08055215B2 Transmission circuit and communication device 有权
标题翻译：传输电路和通信设备
公开(公告)号：US08055215B2
公开(公告)日：2011-11-08
申请号：US12100856
申请日：2008-04-10
申请人： Yoshihiro Hara , Shunsuke Hirano , Toru Matsuura , Shigeru Morimoto
发明人： Yoshihiro Hara , Shunsuke Hirano , Toru Matsuura , Shigeru Morimoto
IPC分类号： H04B1/04
CPC分类号： H04B1/0483
摘要： Provided is a transmission circuit capable of operating with high linearity and with low noise. An AM variable fc filter uses an AM cutoff frequency to remove a high frequency component from an amplitude signal. An amplifier supplies a power amplifier with a voltage which is a result of amplifying the amplitude signal outputted from the AM variable fc filter. A PM variable fc filter uses a PM cutoff frequency to remove a high frequency component from a phase signal. A phase modulator phase-modulates the phase signal outputted from the PM variable fc filter to output a high-frequency phase-modulated signal. The power amplifier amplifies the high-frequency phase-modulated signal by using the voltage supplied from the amplifier, and outputs a resultant signal as a transmission signal. The AM variable fc filter and the PM variable fc filter respectively control the AM cutoff frequency and the PM cutoff frequency such that the AM cutoff frequency and the PM cutoff frequency each have an opposite characteristic to that of an output power of the transmission signal.
摘要翻译：提供了能够以高线性度和低噪声运行的传输电路。 AM变量fc滤波器使用AM截止频率从幅度信号中去除高频分量。放大器为功率放大器提供电压，该电压是从AM变量fc滤波器输出的幅度信号的放大结果。 PM变量fc滤波器使用PM截止频率从相位信号中去除高频分量。相位调制器对从PM变量fc滤波器输出的相位信号进行相位调制，以输出高频相位调制信号。功率放大器通过使用从放大器提供的电压放大高频相位调制信号，并输出合成信号作为发送信号。 AM变量fc滤波器和PM变量fc滤波器分别控制AM截止频率和PM截止频率，使得AM截止频率和PM截止频率各自具有与发送信号的输出功率相反的特性。

59. 发明授权

US07840193B2 Transmitter and communication apparatus 有权
标题翻译：发射机和通信设备
公开(公告)号：US07840193B2
公开(公告)日：2010-11-23
申请号：US11907380
申请日：2007-10-11
申请人： Yoshihiro Hara , Shigeru Morimoto
发明人： Yoshihiro Hara , Shigeru Morimoto
IPC分类号： H04B1/02
CPC分类号： H03C1/62
摘要： A modulator 23 corrects an amplitude signal Rd by adding thereto an offset value α and generates, based on the corrected amplitude signal Rd, an amplitude signal Ra for amplitude-modulating a radio-frequency signal. The modulator 23 includes: an offset voltage measurement section 109 operable to measure an offset voltage V2cal of the amplitude signal Ra; a correction value calculation section 110 operable to obtain a difference value ΔV2cal between the offset voltage V2cal measured by the offset voltage measurement section 109 and an initial value of the offset voltage V2cal and operable to calculate, based on the difference value ΔV2cal, a correction value VODAC for correcting the offset voltage V2cal; and an addition section 106 operable to add the correction value VODAC calculated by the correction value calculation section 110 to a signal processed until the amplitude signal Ra is generated from the amplitude signal Rd.
摘要翻译：调制器23通过加上偏移值α来校正幅度信号Rd，并且基于校正的振幅信号Rd生成用于幅度调制射频信号的振幅信号R. 调制器23包括：偏移电压测量部109，用于测量振幅信号Ra的偏移电压V2cal; 校正值计算部分110，用于获得由偏移电压测量部分109测量的偏移电压V2cal与偏移电压V2cal的初始值之间的差值Dgr; V2cal，并且可操作以基于差值Dgr; V2cal ，用于校正偏移电压V2cal的校正值VODAC; 以及附加部分106，其可操作以将由校正值计算部分110计算出的校正值VODAC与从振幅信号Rd产生振幅信号Ra之前的处理信号相加。

60. 发明授权

US07640741B2 Driving apparatus 失效
标题翻译：驱动装置
公开(公告)号：US07640741B2
公开(公告)日：2010-01-05
申请号：US11598358
申请日：2006-11-13
申请人： Yoshihiro Hara
发明人： Yoshihiro Hara
IPC分类号： F01B29/10
CPC分类号： H04N5/23248 , G03B2205/0023 , G03B2205/0076 , H04N5/2251 , H04N5/23258 , H04N5/23287
摘要： In an auto image stabilization system, a driving member formed as a wire of shape memory alloy (SMA) is retained by a projection of an image capturing unit. A distance Lb from the rotation center of an elastic deforming part to center of gravity (point of application) of the image capturing unit is longer than a distance La from the rotation center of the elastic deforming part to the projection (power point). In the configuration, equivalent mass (apparent mass) of the image capturing unit becomes (Lb/La) times, and it causes deterioration in response. Consequently, the driving member having an ellipse-shaped section in which a value obtained by dividing the width in the longer direction of the section by the width in the shorter direction is 1.3 or larger is employed. As a result, heat dissipation of the driving member increases, so that response in the SMA actuator can be properly improved.
摘要翻译：在自动图像稳定系统中，形成为形状记忆合金（SMA）的线的驱动构件由图像捕获单元的投影保持。从弹性变形部的旋转中心到图像拍摄单元的重心（施加点）的距离Lb比从弹性变形部的旋转中心到投影（动力点）的距离La长。在该结构中，图像拍摄单元的等效质量（视在质量）变为（Lb / La）倍，并且导致响应恶化。因此，采用具有椭圆形截面的驱动构件，其中通过将截面的长度方向上的宽度除以短边方向的宽度获得的值为1.3或更大。结果，驱动构件的散热增加，从而可以适当地改善SMA致动器中的响应。

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