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51. 发明授权

US06833673B2 Plasma display panel and method for manufacturing the same 失效
标题翻译：等离子显示面板及其制造方法
公开(公告)号：US06833673B2
公开(公告)日：2004-12-21
申请号：US10335413
申请日：2003-01-03
申请人： Osamu Toyoda , Motonari Kifune , Kazunori Inoue
发明人： Osamu Toyoda , Motonari Kifune , Kazunori Inoue
IPC分类号： H01J1100
CPC分类号： H01J11/16 , H01J11/24 , H01J2211/245
摘要： A plasma display panel is provided which has a novel cell structure excelling in light emission efficiency. Each display electrode arranged on a first substrate making a substrate pair is formed in a manner to have a three-dimensional structure including an elongated power supplying portion stretching over plural cells aligned in one direction, and discharge portions protruding from the power supplying portion in the direction of electrode arrangement for each cell so as to be close to a second substrate.
摘要翻译：提供了具有优异的发光效率的新型单元结构的等离子体显示面板。布置在制造基板对的第一基板上的每个显示电极被形成为具有三维结构，该三维结构包括在一个方向上对齐的多个单元上延伸的细长供电部分，以及在该电源部分中突出的排出部分每个电池单元的电极布置方向以便接近第二衬底。

52. 发明授权

US06586335B1 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06586335B1
公开(公告)日：2003-07-01
申请号：US09645981
申请日：2000-10-11
申请人： Kazuyuki Sakata , Kazunori Inoue , Takeshi Morita , Hitoshi Nagata
发明人： Kazuyuki Sakata , Kazunori Inoue , Takeshi Morita , Hitoshi Nagata
IPC分类号： H01L2972
CPC分类号： H01L29/66765 , G02B6/0006 , H01L21/28008 , H01L21/32134 , H01L29/41733 , H01L29/42384 , H01L29/458 , H01L29/4908
摘要： A thin film transistor includes: a substrate, a gate electrode, an insulating film, a semiconductor film, a source electrode, a drain electrode, wherein in at least one electrode of the gate electrode, the source electrode and the drain electrode, end portion of the at least one electrode is tapered in such a manner that a thickness decreases in a direction toward end face of the at least one electrode, the at least one electrode being composed of one electrode material, and prescribed physical property of the at least one electrode being changed in a direction perpendicular to a surface of the at least one electrode, so that an etching rate of the at least one electrode is changed in the direction.
摘要翻译：薄膜晶体管包括：基板，栅电极，绝缘膜，半导体膜，源电极，漏电极，其中在栅电极的至少一个电极中，源电极和漏极，端部所述至少一个电极的厚度在朝向所述至少一个电极的端面的方向上减小，所述至少一个电极由一个电极材料构成，并且所述至少一个电极的规定的物理性质电极在垂直于至少一个电极的表面的方向上变化，使得至少一个电极的蚀刻速率在该方向上改变。

53. 发明授权

US06252247B1 Thin film transistor, a method for producing the thin film transistor, and a liquid crystal display using a TFT array substrate 有权
标题翻译：薄膜晶体管器件，使用TFT阵列基板的液晶显示器
公开(公告)号：US06252247B1
公开(公告)日：2001-06-26
申请号：US09168091
申请日：1998-10-08
申请人： Kazuyuki Sakata , Kazunori Inoue , Toru Takeguchi , Nobuhiro Nakamura , Masaru Yamada
发明人： Kazuyuki Sakata , Kazunori Inoue , Toru Takeguchi , Nobuhiro Nakamura , Masaru Yamada
IPC分类号： H01L2702
CPC分类号： H01L29/66765 , G02F2001/136295 , H01L29/41733 , H01L29/458 , H01L29/4908
摘要： A thin film transistor (TFT) device including a first electrode including at least one of a gate, a source and a drain formed on a transparent insulating substrate, an insulating film layer covering both the first electrode and the transparent insulating substrate, and a transparent film electrode formed on the insulating film layer. The first electrode includes a first layer made of pure Al or Al alloy and a second layer, formed by an impurity selected from one of N, O, Si and C, added to the Al or Al alloy. The second layer of the first electrode is provided at an interconnection between the transparent film electrode and the first layer of the first electrode.
摘要翻译：一种薄膜晶体管（TFT）装置，包括：第一电极，其包括形成在透明绝缘基板上的栅极，源极和漏极中的至少一个;覆盖第一电极和透明绝缘基板的绝缘膜层;以及透明膜电极形成在绝缘膜层上。第一电极包括由纯Al或Al合金制成的第一层和由添加到Al或Al合金中的选自N，O，Si和C中的一种的杂质形成的第二层。第一电极的第二层设置在透明膜电极和第一电极的第一层之间的互连处。

54. 发明授权

US06218206B1 Method for producing thin film transistor and thin film transistor using the same 有权
标题翻译：使用该薄膜晶体管和薄膜晶体管的薄膜晶体管的制造方法
公开(公告)号：US06218206B1
公开(公告)日：2001-04-17
申请号：US09153332
申请日：1998-09-15
申请人： Kazunori Inoue , Masaru Aoki , Munehito Kumagai , Shigeaki Noumi , Tohru Takeguchi
发明人： Kazunori Inoue , Masaru Aoki , Munehito Kumagai , Shigeaki Noumi , Tohru Takeguchi
IPC分类号： H01L2100
CPC分类号： H01L29/66765
摘要： To provide a method of producing a TFT array and a liquid crystal display apparatus in which a contact resistivity of a pixel electrode and a drain electrode through a contact hole in an interlayer insulating film can be not more than 10E4&OHgr; stably. A method of producing TFT of the present invention for a liquid crystal display apparatus includes the step of forming TFT, the step of forming an interlayer insulating film, in which the surface is made to be flat so that a level difference due to the TFT area is eliminated, on a transparent insulating substrate, the step of providing a contact hole on a drain electrode of the interlayer insulating film so as to forming a pixel electrode on the interlayer insulating film so that the pixel electrode is electrically connected with the drain electrode through the contact hole, and the step of after forming the contact hole on the interlayer insulating film, applying a surface treatment for cleaning the surface of the contact portion to the surface of the substrate including the surface of the drain electrode exposed from the contact hole.
摘要翻译：为了提供一种制造TFT阵列的方法和液晶显示装置，其中通过层间绝缘膜中的接触孔的像素电极和漏极的接触电阻率可以稳定在10E4OMEGA以下。本发明的液晶显示装置的TFT的制造方法包括以下步骤：形成TFT，形成层间绝缘膜的步骤，其中使所述表面平坦，使得由TFT区域引起的电平差在透明绝缘基板上消除了在层间绝缘膜的漏电极上设置接触孔的步骤，以在层间绝缘膜上形成像素电极，使得像素电极通过与漏极电连接而电连接所述接触孔以及在所述层间绝缘膜上形成所述接触孔之后的步骤，对所述接触部的表面进行表面处理，将所述接触部的表面进行表面处理，所述表面处理包括从所述接触孔露出的所述漏电极的表面。

55. 发明授权

US09704742B2 Wiring film and active matrix substrate using the same, and method for manufacturing wiring film 有权
公开(公告)号：US09704742B2
公开(公告)日：2017-07-11
申请号：US13604452
申请日：2012-09-05
申请人： Kazuyuki Fujiwara , Kazunori Inoue , Takahito Yamabe
发明人： Kazuyuki Fujiwara , Kazunori Inoue , Takahito Yamabe
IPC分类号： H01L29/786 , H01L21/283 , H01L21/768 , H01L29/45 , H01L29/49 , H01L27/12
CPC分类号： H01L21/76838 , H01L21/283 , H01L27/1244 , H01L29/458 , H01L29/4908
摘要： An Al wiring film having a tapered shape is obtained easily and in a stable manner. An Al wiring film has a double-layer structure including a first Al alloy layer made of Al or an Al alloy, and a second Al alloy layer laid on the first Al alloy layer and having a composition different from a composition of the first Al alloy layer by containing at least one element of Ni, Pd, and Pt. The second Al alloy layer is etched by an alkaline chemical solution used in a developing process of a photoresist, and an end portion of the second Al alloy layer recedes from an end portion of the photoresist. Thereafter, by performing wet etching using the photoresist as a mask, a cross section of the Al wiring film becomes a tapered shape.

56. 发明授权

US08159749B2 Antireflection coating and display device 有权
标题翻译：防反射涂层和显示装置
公开(公告)号：US08159749B2
公开(公告)日：2012-04-17
申请号：US12545217
申请日：2009-08-21
申请人： Kazunori Inoue , Naoki Tsumura , Nobuaki Ishiga , Takeshi Ono , Naoki Nakagawa , Masafumi Agari , Yusuke Yamagata , Kensuke Nagayama
发明人： Kazunori Inoue , Naoki Tsumura , Nobuaki Ishiga , Takeshi Ono , Naoki Nakagawa , Masafumi Agari , Yusuke Yamagata , Kensuke Nagayama
IPC分类号： G02B5/28 , G02F1/1335
CPC分类号： G02B1/116 , C08K3/08 , C09D1/00 , C09D7/61 , C23C14/0036 , C23C14/0641 , C23C14/18 , G02F1/133502 , Y10T428/265
摘要： An antireflection coating is formed on a transparent substrate and includes an Al film having a transmittance of lower than 10% at a wavelength of 550 nm with a thickness of 25 nm and predominantly composed of aluminum (Al), and an Al—N film formed in at least one of an upper layer and a lower layer of the Al film, having a transmittance of equal to or higher than 10% at a wavelength of 550 nm with a thickness of 25 nm, predominantly composed of Al and at least containing a nitrogen (N) element as an additive. A specific resistance of the antireflection coating is equal to or lower than 1.0×10−2 O·cm, and a reflectance of a surface of the Al—N film is equal to or lower than 50% in a visible light region.
摘要翻译：在透明基板上形成防反射膜，在550nm波长下透射率低于10％的Al膜，厚度为25nm，主要由铝（Al）构成，形成Al-N膜在Al膜的上层和下层中的至少一层中，在550nm的波长下具有等于或高于10％的透射率，厚度为25nm，主要由Al组成并且至少含有氮（N）元素作为添加剂。抗反射涂层的电阻率为1.0×10 -2 O·cm以下，Al-N膜的表面的可反射率在可见光区域为50％以下。

57. 发明申请

US20090165085A1 VECTOR GENERATION DEVICE, VECTOR GENERATING METHOD, AND INTEGRATED CIRCUIT 审中-公开
标题翻译：矢量生成装置，矢量生成方法和集成电路
公开(公告)号：US20090165085A1
公开(公告)日：2009-06-25
申请号：US11568318
申请日：2006-02-21
申请人： Ken Naka , Kazunori Inoue , Mikio Morioka
发明人： Ken Naka , Kazunori Inoue , Mikio Morioka
IPC分类号： H04L9/32 , G06F17/15 , G06F17/16
CPC分类号： G06K9/00885 , G06F21/32 , G07C9/00158
摘要： An object of the invention is to provide a vector generation apparatus, a vector generation method, and an integrated circuit for generating data (vector) as a basis for authentication processing such as biometric authentication while protecting information that can be authenticated at high speed using the resources of a server and should be handled as secrete information typified by a biometric template against secondary use.A terminal 100 includes a reception section 101 for receiving a feature extraction vector as a first vector from the outside; a storage section 102 for storing a biometric template vector as a second vector; a vector computation section 103 for calculating a correlation efficient between the first vector and the second vector and generating a third vector different from the second vector, with the correlation coefficient matching the correlation efficient; and a transmission section 104 for transmitting the third vector to a server 10.
摘要翻译：本发明的目的是提供一种矢量生成装置，矢量生成方法和用于生成数据（矢量）的集成电路，作为用于诸如生物认证的认证处理的基础，同时保护可以高速认证的信息，使用服务器的资源，应以生物识别模板为代表的隔离信息进行处理，防止二次使用。终端100包括：接收部分101，用于从外部接收特征提取矢量作为第一矢量; 存储部102，用于存储作为第二矢量的生物体模板矢量; 矢量计算部分103，用于计算第一矢量和第二矢量之间的相关效率，并产生与第二矢量不同的第三矢量，相关系数与相关效率相匹配; 以及用于将第三矢量发送到服务器10的发送部分104。

58. 发明授权

US07455562B2 Material for manufacturing display panel substrate assembly and process for manufacturing display panel substrate assembly 失效
标题翻译：用于制造显示面板基板组件的材料和用于制造显示面板基板组件的工艺
公开(公告)号：US07455562B2
公开(公告)日：2008-11-25
申请号：US10968274
申请日：2004-10-20
申请人： Osamu Toyoda , Kazunori Inoue
发明人： Osamu Toyoda , Kazunori Inoue
IPC分类号： H01J9/00
CPC分类号： C03C17/34 , C03C2217/445 , C03C2217/475 , C03C2217/479 , H01J9/02 , H01J9/242 , H01J11/12 , H01J2211/225
摘要： A material for manufacturing a display panel substrate assembly having at least an electrode and a dielectric layer covering the electrode on a glass substrate, the material including an electrode material containing an electrically conductive particle and a binder resin having a thermal degradation temperature T1, and a dielectric material containing a binder resin having a thermal degradation temperature T2 and a low melting point glass having a glass softening point Tb, wherein the thermal degradation temperatures T1 and T2, and the glass softening point Tb have a relationship of T2
摘要翻译：一种用于制造显示面板基板组件的材料，所述显示面板基板组件至少具有覆盖玻璃基板上的电极的电极和电介质层，所述材料包括含有导电颗粒的电极材料和具有热降解温度T 1的粘合剂树脂，以及含有热降解温度T 2的粘合剂树脂和玻璃软化点Tb的低熔点玻璃的介电材料，其中，热分解温度T 1和T 2以及玻璃软化点Tb的关系为T 2

59. 发明授权

US07372206B2 Gas discharge panel substrate assembly having protective layer in contact with discharge space, and AC type gas discharge panel having the assembly 失效
标题翻译：具有与放电空间接触的保护层的气体放电面板基板组件，以及具有该组件的AC型排气面板
公开(公告)号：US07372206B2
公开(公告)日：2008-05-13
申请号：US10627727
申请日：2003-07-28
申请人： Kazunori Inoue , Shigeo Kasahara , Koichi Sakita , Osamu Toyoda , Minoru Hasegawa , Hideki Harada , Keiichi Betsui
发明人： Kazunori Inoue , Shigeo Kasahara , Koichi Sakita , Osamu Toyoda , Minoru Hasegawa , Hideki Harada , Keiichi Betsui
IPC分类号： H01J17/49
CPC分类号： H01J11/12 , H01J9/02 , H01J11/40
摘要： The present invention provides that a gas discharge panel substrate assembly comprising: electrodes formed on a substrate, a dielectric layer covering the electrodes, and a protective layer covering the dielectric layer and in contact with a discharge space, wherein the protective layer includes MgO and at least one compound selected from the group consisting of an Al compound, a Ti compound, a Y compound, a Zn compound, a Zr compound, a Ta compound and SiC.
摘要翻译：本发明提供一种气体放电面板基板组件，包括：形成在基板上的电极，覆盖电极的电介质层和覆盖电介质层并与放电空间接触的保护层，其中保护层包括MgO，并且选自Al化合物，Ti化合物，Y化合物，Zn化合物，Zr化合物，Ta化合物和SiC中的至少一种化合物。

60. 发明申请

US20070284742A1 SEMICONDUCTOR DEVICE AND ACTIVE MATRIX DISPLAY DEVICE 有权
标题翻译：半导体器件和有源矩阵显示器件
公开(公告)号：US20070284742A1
公开(公告)日：2007-12-13
申请号：US11741193
申请日：2007-04-27
申请人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Kazumasa Kawase
发明人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Kazumasa Kawase
IPC分类号： H01L23/48
CPC分类号： H01L29/4908 , G02F2001/136295 , H01L27/124 , H01L29/458
摘要： A semiconductor device includes a semiconductor layer, an Al alloy film electrically connected to the semiconductor layer, and a transparent electrode layer directly contacting with the Al alloy film at least over an insulating substrate. The Al alloy film includes one or more kinds of elements selected from Fe, Co and Ni in total of 0.5 to 10 mol %, and a remaining substantially comprises Al.
摘要翻译：半导体器件包括半导体层，与半导体层电连接的Al合金膜，以及至少在绝缘基板上与Al合金膜直接接触的透明电极层。 Al合金膜包括选自Fe，Co和Ni中的一种或多种元素，总计为0.5至10mol％，其余基本上包含Al。

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