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51. 发明申请

US20080088987A1 Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film 审中-公开
公开(公告)号：US20080088987A1
公开(公告)日：2008-04-17
申请号：US11825603
申请日：2007-07-06
申请人： Ryou Nakabayashi , Eiji Umetsu , Naoya Hasegawa
发明人： Ryou Nakabayashi , Eiji Umetsu , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , H01F10/30 , H01F10/3263 , H01F10/3272 , H01F41/308 , H01F41/325 , Y10T29/49021 , Y10T29/49032
摘要： An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the thickness of the seed layer is then decreased by etching so as to be smaller than or equal to the critical thickness. Thereby, a crystalline phase which extends through the seed layer from the upper surface to the lower surface can be formed, and/or the average size, in a direction parallel to the layer surface, of the crystal grains in the seed layer can be set to be larger than the thickness of the seed layer. Consequently, a large exchange coupling magnetic field Hex can be generated between the antiferromagnetic layer and the ferromagnetic layer.

52. 发明授权

US07268983B2 Magnetic sensing device with multilayered pinned magnetic layer having magnetostriction-enhancing layer 有权
标题翻译：具有具有磁致伸缩增强层的多层固定磁性层的磁感测装置
公开(公告)号：US07268983B2
公开(公告)日：2007-09-11
申请号：US11156678
申请日：2005-06-20
申请人： Naoya Hasegawa , Masamichi Saito , Eiji Umetsu
发明人： Naoya Hasegawa , Masamichi Saito , Eiji Umetsu
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetic sensing device is presented that has a multilayer material with a pinned magnetic layer, a nonmagnetic material layer, and a free magnetic layer. The pinned magnetic layer is a composite with a nonmagnetic intermediate layer and magnetic thin-film layers separated from each other by the nonmagnetic intermediate layer. A first nonmagnetic magnetostriction-enhancing layer is on the pinned magnetic layer and contacts a first thin-film layer placed farthest from the nonmagnetic material layer. At least one of the magnetic thin-film layers has a composite structure with a second nonmagnetic magnetostriction-enhancing layer and magnetic layers separated from each other by the second magnetostriction-enhancing layer. All of the magnetic layers are magnetized in the same direction antiparallel to the adjacent magnetic thin-film layer. At least some crystals of the first and second magnetostriction-enhancing layers and the first thin-film layer/magnetic layers are epitaxial or heteroepitaxial.
摘要翻译：本发明提供一种具有多层材料的磁感测装置，其具有钉扎磁性层，非磁性材料层和自由磁性层。钉扎磁性层是具有非磁性中间层和通过非磁性中间层彼此分离的磁性薄膜层的复合材料。第一非磁性磁致伸缩增强层位于被钉扎的磁性层上，并接触放置在最远离非磁性材料层的第一薄膜层。磁性薄膜层中的至少一个具有与第二非磁致伸缩增强层和由第二磁致伸缩增强层彼此分离的磁性层的复合结构。所有的磁性层在与相邻的磁性薄膜层反平行的相同方向被磁化。第一和第二磁致伸缩增强层和第一薄膜层/磁性层的至少一些晶体是外延或异质外延的。

53. 发明授权

US07126797B2 Spin valve magnetoresistive element having pinned magnetic layer composed of epitaxial laminated film having magnetic sublayers and nanomagnetic interlayer 有权
标题翻译：旋转阀磁阻元件具有由具有磁性子层和纳米磁性中间层的外延层压膜构成的固定磁性层
公开(公告)号：US07126797B2
公开(公告)日：2006-10-24
申请号：US10784014
申请日：2004-02-20
申请人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide
发明人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Yosuke Ide
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3912 , G11B5/3932 , H01F10/30 , H01F10/3272 , H01F41/302 , Y10T29/49034
摘要： A magnetic sensor includes a pinned magnetic layer having first and second magnetic sublayers sandwiching a nonmagnetic metal layer. The nonmagnetic metal layer contains at least one of Ru, Re, Os, Ti, Rh, Ir, Pd, Pt, and Al. The atoms in the first magnetic sublayer and the atoms in the nonmagnetic metal layer overlap with each other, while each of the crystal structures is deformed. The deformations in the crystal structure of the first magnetic sublayer increase the magnetostriction constant, thereby increasing the magnetoelastic effect of the magnetic sensor.
摘要翻译：磁传感器包括具有夹着非磁性金属层的第一和第二磁性子层的钉扎磁性层。非磁性金属层含有Ru，Re，Os，Ti，Rh，Ir，Pd，Pt和Al中的至少一种。第一磁性子层中的原子和非磁性金属层中的原子彼此重叠，而每个晶体结构变形。第一磁性子层的晶体结构的变形增加了磁致伸缩常数，从而增加了磁传感器的磁致弹性效应。

54. 发明授权

US07075759B2 Magnetic sensing element with free layer biasing using varying thickness nonmagnetic coupling layer 失效
标题翻译：磁感应元件采用不同厚度的非磁性耦合层自由层偏置
公开(公告)号：US07075759B2
公开(公告)日：2006-07-11
申请号：US10251112
申请日：2002-09-20
申请人： Naoya Hasegawa , Eiji Umetsu
发明人： Naoya Hasegawa , Eiji Umetsu
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B2005/3996
摘要： A nonmagnetic layer comprising Ru formed on a free magnetic layer, wherein a ferromagnetic layer and a second antiferromagnetic layer are formed on each outer side of the nonmagnetic layer. A ferromagnetic coupling is effectively generated between the ferromagnetic layer and each outer side of the free magnetic layer. Magnetization of the free magnetic layer is adequately controlled by the ferromagnetic coupling without damaging each outer side of the free magnetic layer to allow manufacture of a magnetic sensing element capable of properly defining a narrow track width.
摘要翻译：包含形成在自由磁性层上的Ru的非磁性层，其中在非磁性层的每个外侧上形成铁磁层和第二反铁磁性层。在铁磁层和自由磁性层的每个外侧之间有效地产生铁磁耦合。通过铁磁耦合来充分地控制自由磁性层的磁化，而不损害自由磁性层的每个外侧，以允许制造能够适当地限定窄轨道宽度的磁传感元件。

55. 发明申请

US20060077597A1 Magnetic detector including antiferromagnetic layer, amorphous barrier layer, base layer, and hard layer arranged in that order and method for manufacturing magnetic detector 失效
标题翻译：磁性检测器，包括反铁磁性层，非晶形阻挡层，基层，以及按顺序布置的硬质层以及用于制造磁检测器的方法
公开(公告)号：US20060077597A1
公开(公告)日：2006-04-13
申请号：US11249751
申请日：2005-10-04
申请人： Kenichi Tanaka , Eiji Umetsu , Masahiro Oshima , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Masahiro Oshima , Naoya Hasegawa
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： H01F10/3277 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3932 , H01F10/187 , H01F41/308 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048
摘要： A multilayer film is placed on a substrate. The multilayer film includes an antiferromagnetic layer, a pinned magnetic layer, a non-magnetic material layer, and a free magnetic layer. The multilayer film has recessed sections arranged in both side regions thereof, the recessed sections being formed by partly removing the multilayer film in a vacuum. The bottoms of the recessed sections are located between the upper face and lower face of the antiferromagnetic layer. Amorphous barrier layers with a thickness of Å are placed on the bottoms of the recessed sections, the amorphous barrier layers being formed in the same vacuum as that for forming the recessed sections sequentially to the step of forming the recessed sections.
摘要翻译：将多层膜放置在基板上。多层膜包括反铁磁层，钉扎磁性层，非磁性材料层和自由磁性层。多层膜具有布置在其两侧区域中的凹部，凹部通过在真空中部分去除多层膜而形成。凹陷部分的底部位于反铁磁层的上表面和下表面之间。厚度为10〜32的无定形阻挡层被放置在凹部的底部，与形成凹部的工序相同地形成与用于形成凹部的非晶形阻挡层相同的真空。

56. 发明申请

US20060002039A1 Magnetoresistive sensor containing self-pinned layer 有权
标题翻译：含有自固化层的磁阻传感器
公开(公告)号：US20060002039A1
公开(公告)日：2006-01-05
申请号：US11156677
申请日：2005-06-20
申请人： Naoya Hasegawa , Masamichi Saito , Eiji Umetsu
发明人： Naoya Hasegawa , Masamichi Saito , Eiji Umetsu
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： A first magnetic sublayer constituting a pinned magnetic layer is provided in contact with a first magnetostriction-enhancing layer to increase the magnetostriction constant of the first magnetic sublayer. In addition, a nonmagnetic intermediate sublayer constituting the pinned magnetic layer is made of a material having a lattice constant larger than that of Ru, such as a Ru—X alloy, to distort the crystal structures of the first magnetic sublayer and a second magnetic sublayer each in contact with the nonmagnetic intermediate sublayer, increasing the magnetostriction constants of the first magnetic sublayer and the second magnetic sublayer.
摘要翻译：提供构成被钉扎磁性层的第一磁性子层与第一磁致伸缩增强层接触以增加第一磁性子层的磁致伸缩常数。此外，构成被钉扎磁性层的非磁性中间子层由具有大于Ru的晶格常数（例如Ru-X合金）的材料制成，以使第一磁性子层和第二磁性子层的晶体结构变形每个与非磁性中间子层接触，增加第一磁性子层和第二磁性子层的磁致伸缩常数。

57. 发明授权

US06979500B2 GMR magnetic sensing element provided with second free layer extended to outside of track width and method for manufacturing the same 失效
标题翻译：具有延伸到轨道宽度外部的第二自由层的GMR磁感应元件及其制造方法
公开(公告)号：US06979500B2
公开(公告)日：2005-12-27
申请号：US10603983
申请日：2003-06-24
申请人： Naoya Hasegawa , Eiji Umetsu
发明人： Naoya Hasegawa , Eiji Umetsu
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/10 , H01L43/12 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/313 , G11B5/3906 , G11B5/398 , G11B2005/3996 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic sensing element is provided, in which magnetization of a free magnetic layer is likely to fluctuate when the track width is further reduced, and thereby, the magnetic field detection sensitivity can be improved. A second free magnetic layer having a dimension W2 in the track-width direction is laminated on a first free magnetic layer having a dimension W1 in the track-width direction while the dimension W2 is larger than the dimension W1. The film thickness ta of the free magnetic layer in the track-width region A is made larger than the film thickness tb of the free magnetic layer in both side regions B and B. Consequently, the magnetic flux density in the track-width region A of the free magnetic layer resulting from the static magnetic fields generated from both the side regions B and B of the free magnetic layer can be reduced, a dead zone which occurs in the track-width region A of the free magnetic layer can be reduced, and therefore, the magnetic field detection sensitivity is improved.
摘要翻译：提供了一种磁传感元件，其中当轨道宽度进一步减小时，自由磁性层的磁化可能波动，从而可以提高磁场检测灵敏度。在轨道宽度方向上具有尺寸W2的第二自由磁性层层叠在尺寸W2大于尺寸W1的轨道宽度方向上具有尺寸W1的第一自由磁性层上。使轨道宽度区域A中的自由磁性层的膜厚度ta大于两侧区域B和B中自由磁性层的膜厚度tb。因此，轨道宽度区域A中的磁通密度可以减少由自由磁性层的侧面区域B和B产生的静态磁场产生的自由磁性层，可以减少在自由磁性层的轨道宽度区域A中发生的死区，因此，提高了磁场检测灵敏度。

58. 发明授权

US06885528B2 Magnetic sensing element having chromium layer between antiferromagnetic layers 失效
标题翻译：在反铁磁层之间具有铬层的磁感测元件
公开(公告)号：US06885528B2
公开(公告)日：2005-04-26
申请号：US10422585
申请日：2003-04-23
申请人： Naoya Hasegawa , Eiji Umetsu
发明人： Naoya Hasegawa , Eiji Umetsu
IPC分类号： G01R33/09 , G11B5/00 , G11B5/31 , G11B5/39 , H01F10/32 , H01F41/14 , H01L43/08 , H01L43/12 , B11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3113 , G11B5/3903 , G11B5/3909 , G11B5/3932 , G11B2005/0008 , G11B2005/3996
摘要： A magnetic sensing element comprising a composite film having a center portion and two side portions, a second antiferromagnetic layer, a chromium nonmagnetic layer, and third antiferromagnetic layers is provided. The composite film comprises a first antiferromagnetic layer; a pinned magnetic layer on the first antiferromagnetic layer; a nonmagnetic material layer on the pinned magnetic layer; and a free magnetic layer on the nonmagnetic material layer. The second antiferromagnetic layer is disposed on the free magnetic layer. The chromium nonmagnetic layer is disposed on the second antiferromagnetic layer at the center portion. The third antiferromagnetic layers are disposed on the second antiferromagnetic layer at the two side portions. The magnetization direction in the two side portions of the free magnetic layer is pinned in the track width direction and the magnetization direction in the center portion is rotatable in response to external magnetic fields.
摘要翻译：提供一种磁传感元件，其包括具有中心部分和两个侧面部分的复合膜，第二反铁磁层，铬非磁性层和第三反铁磁层。复合膜包括第一反铁磁层; 第一反铁磁层上的钉扎磁性层; 钉在磁性层上的非磁性材料层; 和非磁性材料层上的自由磁性层。第二反铁磁层设置在自由磁性层上。铬非磁性层设置在中心部分的第二反铁磁性层上。第三反铁磁层设置在两侧部分的第二反铁磁性层上。自由磁性层的两侧部的磁化方向被钉扎在轨道宽度方向上，并且中心部分的磁化方向响应于外部磁场而旋转。

59. 发明申请

US20050024793A1 Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film 失效
标题翻译：交换膜，交换膜的制造方法以及包含交换膜的磁感应元件
公开(公告)号：US20050024793A1
公开(公告)日：2005-02-03
申请号：US10896084
申请日：2004-07-21
申请人： Ryou Nakabayashi , Eiji Umetsu , Naoya Hasegawa
发明人： Ryou Nakabayashi , Eiji Umetsu , Naoya Hasegawa
IPC分类号： G01R33/09 , G11B5/39 , H01F10/30 , H01F10/32 , H01F41/14 , H01F41/30 , H01L43/08 , H01L43/12 , G11B5/33 , G11B5/127
CPC分类号： G11B5/3932 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , H01F10/30 , H01F10/3263 , H01F10/3272 , H01F41/308 , H01F41/325 , Y10T29/49021 , Y10T29/49032
摘要： An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the thickness of the seed layer is then decreased by etching so as to be smaller than or equal to the critical thickness. Thereby, a crystalline phase which extends through the seed layer from the upper surface to the lower surface can be formed, and/or the average size, in a direction parallel to the layer surface, of the crystal grains in the seed layer can be set to be larger than the thickness of the seed layer. Consequently, a large exchange coupling magnetic field Hex can be generated between the antiferromagnetic layer and the ferromagnetic layer.
摘要翻译：交换耦合膜包括种子层，反铁磁层和铁磁层。籽晶层的厚度大于临界厚度，然后通过蚀刻使籽晶层的厚度减小到临界厚度以下。因此，可以形成从上表面向下表面延伸穿过晶种层的结晶相，和/或可以设定种子层中晶粒平行于层表面的方向上的平均尺寸大于种子层的厚度。因此，可以在反铁磁层和铁磁层之间产生大的交换耦合磁场Hex。

60. 发明授权

US06807034B2 Dual spin-valve CCP type thin-film magnetic element with multi free layers 有权
标题翻译：双自旋阀CCP型薄膜磁性元件，具有多层自由层
公开(公告)号：US06807034B2
公开(公告)日：2004-10-19
申请号：US10170802
申请日：2002-06-13
申请人： Naoya Hasegawa , Eiji Umetsu
发明人： Naoya Hasegawa , Eiji Umetsu
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3916 , G11B5/3954
摘要： In a CPP-type magnetic sensing element, a free magnetic layer includes at least two magnetic sublayers and an intermediate sublayer placed between the two adjacent magnetic sublayers, and thus the free magnetic layer is in a synthetic ferrimagnetic state. Since the physical thickness of the free magnetic layer can be increased and the resultant magnetic moment can be decreased, the bulk scattering effect is satisfactorily displayed and the magnetization of the free magnetic layer varies satisfactorily in response to en external magnetic field, resulting in an increase in the read output.
摘要翻译：在CPP型磁敏元件中，自由磁性层包括至少两个磁性子层和位于两个相邻磁性子层之间的中间子层，因此自由磁性层处于合成铁磁性状态。由于可以增加自由磁性层的物理厚度并且可以减小所得的磁矩，所以体积散射效果令人满意地显示，并且自由磁性层的磁化响应于外部磁场而令人满意地变化，导致增加在读取输出。

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