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51. 发明授权

US4153487A Method of manufacturing intergrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques 失效
标题翻译：使用自对准双扩散技术制造集成注入逻辑半导体器件的方法
公开(公告)号：US4153487A
公开(公告)日：1979-05-08
申请号：US822194
申请日：1977-08-05
申请人： Yukuya Tokumaru , Masanori Nakai , Satoshi Shinozaki , Junichi Nakamura , Shintaro Ito , Yoshio Nishi
发明人： Yukuya Tokumaru , Masanori Nakai , Satoshi Shinozaki , Junichi Nakamura , Shintaro Ito , Yoshio Nishi
IPC分类号： H01L21/033 , H01L21/8226 , H01L27/02 , H01L21/22 , H01L21/76 , H01L27/04
CPC分类号： H01L21/8226 , H01L21/033 , H01L27/0233
摘要： A P type semiconductor layer is formed on an N type semiconductor layer by vapor epitaxial growth technique, an insulating film is formed on the P type semiconductor layer and a grid shape first opening is provided through the insulating film. Then, phosphorus is diffused into the P type semiconductor layer through the grid shape opening to form a first N type region extending through the semiconductor layer to reach the N type semiconductor layer. Then, second openings are formed through respective sections of the insulating film divided by and surrounded by the grid shape first opening and boron is diffused through the first and second openings to form first and second P type regions in the grid shape first N type region and the P type semiconductor layer, respectively. Finally, third openings are formed through respective portions of the insulating film and phosphorus is diffused into the P type semiconductor layer through the third openings to form second N type regions thereby forming an integrated injection logic semiconductor device including a lateral PNP transistor and a vertical NPN transistor.
摘要翻译：通过蒸气外延生长技术在N型半导体层上形成P型半导体层，在P型半导体层上形成绝缘膜，通过绝缘膜设置栅格状的第一开口。然后，磷通过栅格形状开口扩散到P型半导体层中，以形成延伸穿过半导体层的第一N型区域到达N型半导体层。然后，通过由栅格形状的第一开口分隔并被其包围的绝缘膜的各个部分形成第二开口，并且硼通过第一和第二开口扩散，以形成网格形状的第一N型区域中的第一和第二P型区域， P型半导体层。最后，通过绝缘膜的各部分形成第三开口，并且磷通过第三开口扩散到P型半导体层中，以形成第二N型区域，从而形成包括横向PNP晶体管和垂直NPN的集成注入逻辑半导体器件晶体管。

52. 发明授权

US4151019A Method of manufacturing integrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques 失效
标题翻译：使用自对准双扩散技术制造集成注入逻辑半导体器件的方法
公开(公告)号：US4151019A
公开(公告)日：1979-04-24
申请号：US822322
申请日：1977-08-05
申请人： Yukuya Tokumaru , Masanori Nakai , Satoshi Shinozaki , Junichi Nakamura , Shintaro Ito , Yoshio Nishi
发明人： Yukuya Tokumaru , Masanori Nakai , Satoshi Shinozaki , Junichi Nakamura , Shintaro Ito , Yoshio Nishi
IPC分类号： H01L21/033 , H01L21/8226 , H01L27/02 , H01L21/22 , H01L21/76 , H01L27/04
CPC分类号： H01L21/033 , H01L21/8226 , H01L27/0233
摘要： A P type semiconductor layer is formed on an N type semiconductor layer by vapor epitaxial growth technique, an insulating film is formed on the P type semiconductor layer and a grid shape first opening is provided through the insulating film. Then, phosphorus is diffused into the P type semiconductor layer through the grid shape opening to form a first N type region extending through the semiconductor layer to reach the N type semiconductor layer. Then, second openings are formed through respective sections of the insulating film divided by and surrounded by the grid shape first opening and boron is diffused through the first and second openings to form first and second P type regions in the grid shape first N type region and the P type semiconductor layer, respectively. Finally, third openings are formed through respective portions of the insulating film and phosphorus is diffused into the P type semiconductor layer through the third openings to form second N type regions thereby forming an integrated injection logic semiconductor device including a lateral PNP transistor and a vertical NPN transistor.
摘要翻译：通过蒸气外延生长技术在N型半导体层上形成P型半导体层，在P型半导体层上形成绝缘膜，通过绝缘膜设置栅格状的第一开口。然后，磷通过栅格形状开口扩散到P型半导体层中，以形成延伸穿过半导体层的第一N型区域到达N型半导体层。然后，通过由栅格形状的第一开口分隔并被其包围的绝缘膜的各个部分形成第二开口，并且硼通过第一和第二开口扩散，以形成网格形状的第一N型区域中的第一和第二P型区域， P型半导体层。最后，通过绝缘膜的各部分形成第三开口，并且磷通过第三开口扩散到P型半导体层中，以形成第二N型区域，从而形成包括横向PNP晶体管和垂直NPN的集成注入逻辑半导体器件晶体管。

53. 发明授权

US4119998A Integrated injection logic with both grid and internal double-diffused injectors 失效
标题翻译：集成注入逻辑与电网和内部双扩散注射器
公开(公告)号：US4119998A
公开(公告)日：1978-10-10
申请号：US815768
申请日：1977-07-14
申请人： Yukuya Tokumaru , Masanori Nakai , Satoshi Shinozaki , Junichi Nakamura , Shintaro Ito , Yoshio Nishi
发明人： Yukuya Tokumaru , Masanori Nakai , Satoshi Shinozaki , Junichi Nakamura , Shintaro Ito , Yoshio Nishi
IPC分类号： H01L27/02 , H01L27/04
CPC分类号： H01L27/0233
摘要： An integrated injection logic semiconductor device is composed of an N type semiconductor substrate, a P type layer, a first N type region so formed as to penetrate through the P type semiconductor layer and contact the N type semiconductor substrate, a second N type region formed in the P type semiconductor layer, and a P type region formed in the first N type region. A third N type region is provided surrounding said first and second N type regions and penetrating through the P type semiconductor layer. I.sup.2 L circuit is composed of a lateral PNP transistor whose emitter, base and collector are constituted by said P type region, said first N type region and said P type semiconductor layer, respectively, and a vertical NPN transistor whose emitter, base and collector are constituted by said N type semiconductor substrate, said P type semiconductor layer and said second N type region, respectively.
摘要翻译：集成注入逻辑半导体器件由N型半导体衬底，P型层，形成为穿透P型半导体层并接触N型半导体衬底的第一N型区域构成，形成第二N型区域在P型半导体层中形成的P型区域和形成在第一N型区域中的P型区域。围绕所述第一和第二N型区域并穿过P型半导体层设置第三N型区域。 I2L电路由发射极，基极和集电极分别由所述P型区域，所述第一N型区域和所述P型半导体层分别构成的横向PNP晶体管和其发射极，基极和集电极构成的垂直NPN晶体管构成分别由所述N型半导体衬底，所述P型半导体层和所述第二N型区域。

54. 发明授权

US4064526A I.I.L. with graded base inversely operated transistor 失效
标题翻译：一，具有分级基极反向操作晶体管
公开(公告)号：US4064526A
公开(公告)日：1977-12-20
申请号：US644048
申请日：1975-12-24
申请人： Yukuya Tokumaru , Masanori Nakai , Satoshi Shinozaki , Junichi Nakamura , Shintaro Ito , Yoshio Nishi
发明人： Yukuya Tokumaru , Masanori Nakai , Satoshi Shinozaki , Junichi Nakamura , Shintaro Ito , Yoshio Nishi
IPC分类号： H01L27/082 , H01L21/331 , H01L21/8226 , H01L27/02 , H01L29/73 , H01L27/04 , H01L29/36 , H01L29/72
CPC分类号： H01L27/0237 , Y10S148/085 , Y10S148/087 , Y10S148/167
摘要： An integrated injection logic semiconductor device comprises an N type semiconductor substrate, a P type semiconductor layer laminated on said semiconductor substrate, and N type first region formed in a manner penetrating through said P type semiconductor layer to reach said N type semiconductor substrate, a first P type region formed in said first N type region, a second N type regionformed in said P type semiconductor layer, and a second P type region formed between said second N type region and said N type semiconductor substrate in a manner connected directly to said N type semiconductor substrate. An integrated injection logic circuit is comprised of a lateral NPN transistor whose emitter, base and collector are constituted by said first P type region, first N type region and P type semiconductor layer, respectively, and a vertical PNP transistor whose emitter, base and collector are constituted by said N type semiconductor substrate, P type semiconductor layer plus second P type region, and second N type region, respectively.
摘要翻译：一种集成注入逻辑半导体器件，包括N型半导体衬底，层叠在所述半导体衬底上的P型半导体层和以穿过所述P型半导体层的方式形成以到达所述N型半导体衬底的N型第一区域，第一形成在所述第一N型区域中的P型区域，形成在所述P型半导体层中的第二N型区域和形成在所述第二N型区域和所述N型半导体衬底之间的第二P型区域，型半导体衬底。集成注入逻辑电路由横向NPN晶体管组成，其发射极，基极和集电极分别由所述第一P型区域，第一N型区域和P型半导体层构成，垂直PNP晶体管的发射极，基极和集电极分别由所述N型半导体衬底，P型半导体层加上第二P型区域和第二N型区域构成。

55. 发明授权

US4054900A I.I.L. with region connecting base of double diffused injector to substrate/emitter of switching transistor 失效
标题翻译：一，具有双扩散注射器的基底与开关晶体管的基板/发射极
公开(公告)号：US4054900A
公开(公告)日：1977-10-18
申请号：US644293
申请日：1975-12-24
申请人： Yukuya Tokumaru , Masanori Nakai , Satoshi Shinozaki , Junichi Nakamura , Shintaro Ito , Yoshio Nishi
发明人： Yukuya Tokumaru , Masanori Nakai , Satoshi Shinozaki , Junichi Nakamura , Shintaro Ito , Yoshio Nishi
IPC分类号： H01L27/02 , H01L29/72 , H01L27/04 , H03K19/08
CPC分类号： H01L27/0233
摘要： An integrated injection logic semiconductor device which comprises an N type semiconductor substrate; a P type semiconductor layer superposed on the N type semiconductor substrate; a first N type region formed in the P type semiconductor layer; a second N type region formed in the P type semiconductor layer; and a P type region formed in the first N type region, wherein the first N type region is connected to the N type semiconductor substrate through an N type connector region formed between the first N type region and N type semiconductor substrate.
摘要翻译：一种包括N型半导体衬底的集成注入逻辑半导体器件; 叠置在N型半导体衬底上的P型半导体层; 形成在P型半导体层中的第一N型区域; 形成在P型半导体层中的第二N型区域; 以及形成在所述第一N型区域中的P型区域，其中所述第一N型区域通过形成在所述第一N型区域和N型半导体衬底之间的N型连接器区域与所述N型半导体衬底连接。

56. 发明授权

US3954908A Flame retardant resin composition comprising an acrylonitrile-styrene base terpolymer, a different acrylonitrile-styrene-chlorinated polyethylene terpolymer and antimony trioxide 失效
标题翻译：阻燃树脂组合物，其包含丙烯腈 - 苯乙烯基三元共聚物，不同的丙烯腈 - 苯乙烯 - 氯化聚乙烯三元共聚物和三氧化锑
公开(公告)号：US3954908A
公开(公告)日：1976-05-04
申请号：US353192
申请日：1973-04-20
申请人： Junichi Nakamura , Masao Ogawa
发明人： Junichi Nakamura , Masao Ogawa
IPC分类号： C08L23/26 , C08K3/00 , C08K3/22 , C08L1/00 , C08L7/00 , C08L21/00 , C08L23/00 , C08L25/00 , C08L27/00 , C08L33/00 , C08L33/02 , C08L51/00 , C08L51/02 , C08L51/04 , C08L51/06 , C08L55/00 , C08L55/02 , C08L101/00 , C08L53/00
CPC分类号： C08L51/04 , C08K3/22 , C08L51/003 , C08L51/06 , C08L55/02
摘要： A resin composition having high flame retardance as well as high tensile strength, high impact strength and good moldability is composed of a resin blend comprising: (1) a ternary resin system of acrylonitrile, butadiene and styrene; a ternary resin system of acrylonitrile, acrylic rubber and styrene; a ternary resin system of acrylonitrile, ethylene-propylene rubber and styrene; or a ternary resin system of acrylonitrile, ethylene-vinyl acetate copolymer and styrene; (2) a ternary resin system of acrylonitrile, chlorinated polyethylene and styrene; and (3) antimony trioxide. Acrylonitrile may be replaced by methyl methacrylate and styrene by .alpha.-methyl styrene. Blends of components (1) are acceptable.
摘要翻译：具有高阻燃性，高抗拉强度，高冲击强度和良好成型性的树脂组合物由以下组成：树脂共混物，其包含：（1）丙烯腈，丁二烯和苯乙烯的三元树脂体系; 丙烯腈，丙烯酸橡胶和苯乙烯的三元树脂体系; 丙烯腈，乙烯 - 丙烯橡胶和苯乙烯的三元树脂体系; 或丙烯腈，乙烯 - 乙酸乙烯酯共聚物和苯乙烯的三元树脂体系; （2）丙烯腈，氯化聚乙烯和苯乙烯的三元树脂体系; 和（3）三氧化锑。丙烯腈可以被甲基丙烯酸甲酯和苯乙烯用α-甲基苯乙烯代替。组分（1）的混合物是可接受的。

57. 发明授权

US09036317B2 Antistatic device 有权
标题翻译：防静电装置
公开(公告)号：US09036317B2
公开(公告)日：2015-05-19
申请号：US14009875
申请日：2012-08-21
申请人： Shingo Suzuki , Junichi Nakamura , Kensaku Asakura , Takahiro Fujimori
发明人： Shingo Suzuki , Junichi Nakamura , Kensaku Asakura , Takahiro Fujimori
IPC分类号： H01H47/00 , H01T4/12 , H01T1/20 , H05K9/00 , H02H9/06
CPC分类号： H01T4/12 , H01T1/20 , H02H9/06 , H05K9/0067
摘要： To provide an antistatic device having a low capacitance, good discharge characteristics, and small variations in the discharge characteristics. In a so-called gap-type antistatic device in which a space between a pair of opposing electrodes is filled with an electrostatic protection material, a discharge inducing portion has protrusions protruding from interfaces between the opposing electrodes and the insulation substrates toward the insulation substrates and has a shape protruding on both sides of the insulation substrates. The relationship among the gap distance between the electrodes, the thicknesses of the opposing electrodes, and the protrusions of the discharge inducing portion is controlled under specific conditions.
摘要翻译：提供具有低电容，良好放电特性和放电特性变化小的抗静电装置。在所谓的间隙型抗静电装置中，一对相对电极之间的空间填充有静电保护材料，放电诱导部具有从相对电极和绝缘基板之间的界面朝向绝缘基板突出的突起，具有在绝缘基板的两侧突出的形状。在特定条件下控制电极之间的间隙距离，相对电极的厚度和放电诱导部分的突起之间的关系。

58. 发明授权

US08674038B2 Curable resin composition for molded bodies, molded body, and production method thereof 失效
标题翻译：用于成型体的可固化树脂组合物，成型体及其制造方法
公开(公告)号：US08674038B2
公开(公告)日：2014-03-18
申请号：US12680215
申请日：2008-09-25
申请人： Junichi Nakamura , Yasunori Tsujino , Kunio Takahashi , Ai Matsumoto , Masafumi Yamashita , Yukihiro Kasano , Tatsushi Hirauchi
发明人： Junichi Nakamura , Yasunori Tsujino , Kunio Takahashi , Ai Matsumoto , Masafumi Yamashita , Yukihiro Kasano , Tatsushi Hirauchi
IPC分类号： C08G59/00 , C08L63/00
CPC分类号： C08L63/00 , C08L2666/22
摘要： The present invention provides a curable resin composition which exhibits the following properties: excellent basic performances such as heat resistance; sufficient optical characteristics such as transparency; and excellent demoldability when a molded body of the composition is demolded at the time of molding. The present invention further provides a molded body obtainable by molding the curable resin composition and a production method thereof. A curable resin composition for molded bodies, including a thermocurable resin, wherein the curable resin composition for molded bodies includes at least one compound selected from the group consisting a compound having a boiling point of 260° C. or less at one atmospheric pressure, a silicon compound having a polyoxyalkylene chain, a silicon compound having an aryl group, and a silicon compound having a polyoxyalkylene chain and an aryl group.
摘要翻译：本发明提供一种具有以下特性的固化性树脂组合物：耐热性优异的基本性能; 足够的光学特性，如透明度; 并且当成型时组合物的成形体脱模时具有优异的脱模性。本发明还提供一种通过模制该可固化树脂组合物而获得的成型体及其制备方法。一种成型体用固化性树脂组合物，其特征在于，包括热固化性树脂，其中，所述成型体用固化性树脂组合物含有选自下述化合物中的至少一种化合物：沸点为一个大气压下的260℃以下的化合物，具有聚氧化烯链的硅化合物，具有芳基的硅化合物和具有聚氧化烯链和芳基的硅化合物。

59. 发明授权

US08524841B2 Curable resin composition, optical material, and method for controlling optical material 失效
标题翻译：可固化树脂组合物，光学材料和控制光学材料的方法
公开(公告)号：US08524841B2
公开(公告)日：2013-09-03
申请号：US11863539
申请日：2007-09-28
申请人： Junichi Nakamura , Yasunori Tsujino , Ai Matsumoto , Yukihiro Kasano , Masafumi Yamashita , Takuo Sugioka , Kunio Takahashi
发明人： Junichi Nakamura , Yasunori Tsujino , Ai Matsumoto , Yukihiro Kasano , Masafumi Yamashita , Takuo Sugioka , Kunio Takahashi
IPC分类号： C08F283/12 , C08G77/04
CPC分类号： C08L63/00 , C08G77/045 , C08L83/00
摘要： To provide: a curable resin composition which can be continuously produced without gelling during production, and has excellent basic performances such as heat resistance and moisture resistance; an optical member which has excellent optical characteristics such as high transparency and exhibits excellent performances in a harsh use environment; and a method for controlling an optical material. A curable resin composition including an organic resin component and a metalloxane component, wherein the organic resin component includes a resin component having an Abbe number of 45 or more and the metalloxane component has a metalloxane bond; an optical material comprising the above-mentioned curable resin composition; an optical member produced by curing the optical material; and a method for controlling an Abbe number and/or a refractive index of an optical material.
摘要翻译：提供：可以在制造中不凝胶化地连续制造的固化性树脂组合物，并且具有优异的耐热性和耐湿性的基本性能; 光学构件，其具有优异的光学特性，例如高透明度并且在恶劣的使用环境中表现出优异的性能; 以及控制光学材料的方法。一种包含有机树脂组分和金属氧化物组分的可固化树脂组合物，其中所述有机树脂组分包括具有45以上的阿贝数的树脂组分和所述金属氧化物组分具有金属氧化物键; 包含上述可固化树脂组合物的光学材料; 通过固化光学材料制造的光学构件; 以及用于控制光学材料的阿贝数和/或折射率的方法。

60. 发明授权

US08458900B2 Wiring substrate having columnar protruding part 有权
标题翻译：具有柱状突起部的布线基板
公开(公告)号：US08458900B2
公开(公告)日：2013-06-11
申请号：US12755555
申请日：2010-04-07
申请人： Kotaro Kodani , Junichi Nakamura
发明人： Kotaro Kodani , Junichi Nakamura
IPC分类号： H05K3/30 , H01K3/10
CPC分类号： H01L23/49816 , H01L21/4853 , H01L21/563 , H01L21/6835 , H01L23/49811 , H01L23/49827 , H01L2221/68359 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05644 , H01L2224/16225 , H01L2224/16238 , H01L2224/73204 , H01L2224/81192 , H01L2224/92125 , H01L2924/00014 , H01L2924/15174 , H05K1/09 , H05K1/111 , H05K1/113 , H05K1/115 , H05K1/116 , H05K1/181 , H05K3/205 , H05K3/4007 , H05K3/4682 , H05K2201/0367 , H05K2201/10242 , H05K2201/10674 , H05K2203/0376 , Y10T29/4913 , Y10T29/49155 , Y10T29/49165 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A method of making a wiring substrate having at least one interconnection layer includes forming a first metal layer on a surface of a support member having at least one columnar through hole that exposes the surface of the support member, forming a columnar metal layer that fills the columnar through hole, forming an insulating layer on the columnar metal layer and on the first metal layer, forming an interconnection layer on a first surface of the insulating layer electrically connected to the columnar metal layer through the insulating layer, and forming, by removing at least an entirety of the support member and an entirety of the first metal layer, a protruding part including at least part of the columnar metal layer protruding from a second surface of the insulating layer opposite the first surface, and serving as at least part of a connection terminal of the wiring substrate.
摘要翻译：制造具有至少一个互连层的布线基板的方法包括在具有暴露支撑构件的表面的至少一个柱状通孔的支撑构件的表面上形成第一金属层，形成填充该支撑构件的柱状金属层在柱状金属层和第一金属层上形成绝缘层，在通过绝缘层与柱状金属层电连接的绝缘层的第一表面上形成互连层，并通过在所述支撑构件的整体和所述第一金属层的整体，突出部分，其包括从所述绝缘层的与所述第一表面相对的第二表面突出的所述柱状金属层的至少一部分，并且用作所述第一金属层的至少一部分接线基板的连接端子。

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