会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 51. 发明授权
    • Methods for forming line patterns in semiconductor substrates
    • 在半导体衬底中形成线图案的方法
    • US06803176B2
    • 2004-10-12
    • US10227067
    • 2002-08-23
    • Sang-jun ChoiYool KangJoo-tae MoonJeong-hee ChungSang-gyun Woo
    • Sang-jun ChoiYool KangJoo-tae MoonJeong-hee ChungSang-gyun Woo
    • G03F740
    • G03F7/40
    • A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.
    • 一种在半导体衬底中形成精细图案的方法,其中通过用光刻工艺将包含至少一种能形成光致抗蚀剂图案的化合物的抗蚀剂组合物涂覆在半导体衬底上的待蚀刻靶材层和自由基引发剂。 自由基引发剂能够在等于或高于至少一种化合物的玻璃化转变温度的温度下被热处理分解。 在抗蚀剂化合物层上进行光刻工艺以形成光致抗蚀剂图案。 将其中形成有光致抗蚀剂图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化转变温度的温度,并且其中发生抗蚀剂组合物中的部分交联反应。
    • 52. 发明授权
    • Photosensitive polymer having cyclic backbone and resist composition comprising the same
    • 具有环状骨架的光敏聚合物和包含其的抗蚀剂组合物
    • US06270942B1
    • 2001-08-07
    • US09539138
    • 2000-03-30
    • Sang-jun Choi
    • Sang-jun Choi
    • G03F7004
    • G03F7/039G03F7/0045Y10S430/115
    • A photosensitive polymer having a cyclic backbone and containing an alicyclic compound and a resist composition obtained therefrom are provided. The photosensitive polymer has a weight-average molecular weight of between about 3,000-100,000 and represented by the following formula: wherein R1, R2 and R5 are independently hydrogen or methyl, R3 is methyl, ethyl, C3 to C20 aliphatic hydrocarbon or alicyclic compound, R4 is hydrogen, hydroxy, hydroxymethyl, carboxylic acid, 2-hydroxyethyloxycarbonyl, tert-butoxycarbonyl or alicyclic compound, R6 is hydrogen atom, 2-hydroxyethyl, tert-butyl, isobornyl, adamantyl, norbornyl or menthyl, l/(l+m+n+p) is between about 0.1-0.5, m/(l+m+n+p) is between about 0.3-0.5, n/(l+m+n+p) is between about 0.0-0.3, and p/(l+m+n+p) is between about 0.0-0.3.
    • 提供具有环状主链并含有脂环族化合物的光敏聚合物和由其得到的抗蚀剂组合物。 感光性聚合物的重均分子量在3000〜10000000之间,由下式表示:其中R1,R2和R5独立地为氢或甲基,R3为甲基,乙基,C3至C20脂族烃或脂环族化合物, R4是氢,羟基,羟甲基,羧酸,2-羟基乙氧基羰基,叔丁氧基羰基或脂环族化合物,R6是氢原子,2-羟乙基,叔丁基,异冰片基,金刚烷基,降冰片基或薄荷基,l /(1 + n + p)在约0.1-0.5之间,m /(1 + m + n + p)在约0.3-0.5之间,n /(1 + m + n + p)在约0.0-0.3之间, (l + m + n + p)在约0.0-0.3之间。