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51. 发明授权

US08043970B2 Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same 有权
标题翻译：用于相对于氧化硅选择性研磨氮化硅的浆料组合物，抛光氮化硅层的方法和使用其制造半导体器件的方法
公开(公告)号：US08043970B2
公开(公告)日：2011-10-25
申请号：US12167781
申请日：2008-07-03
申请人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Jae-Dong Lee
发明人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Jae-Dong Lee
IPC分类号： H01L21/302 , H01L21/461 , B24D3/02 , C09C1/68
CPC分类号： H01L21/31053 , C09G1/02 , H01L29/66583 , H01L29/66795 , H01L29/7851
摘要： Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water, and the first agent includes poly(acrylic acid). The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process.
摘要翻译：提供了相对于氧化硅选择性研磨氮化硅的浆料组合物，研磨氮化硅层的方法和使用其制造半导体器件的方法。浆料组合物包括用于降低氧化物抛光速率的第一试剂，磨料颗粒和水，并且第一试剂包括聚（丙烯酸）。浆料组合物可以具有相对于氧化硅的氮化硅相对于在半导体制造工艺中选择性研磨氮化硅层的高抛光选择性。

52. 发明授权

US07791672B2 Scanning conversion apparatus and method 失效
标题翻译：扫描转换装置和方法
公开(公告)号：US07791672B2
公开(公告)日：2010-09-07
申请号：US10811993
申请日：2004-03-30
申请人： Tae-Sun Kim , Jong-Won Lee , Jae-Hong Park , Jae-Ho Kim
发明人： Tae-Sun Kim , Jong-Won Lee , Jae-Hong Park , Jae-Ho Kim
IPC分类号： H04N11/20
CPC分类号： H04N7/012 , H04N7/0137 , H04N7/0142
摘要： In the scanning conversion apparatus, interlaced-to-progressive scanning is performed according to one of at least two different techniques. The technique used depends on the interlaced scan data being converted. As examples, a spatial interpolation technique, a spatial/temporal interpolation technique, or other technique may be selected.
摘要翻译：在扫描转换装置中，根据至少两种不同的技术之一进行隔行扫描。所使用的技术取决于被转换的隔行扫描数据。作为示例，可以选择空间插值技术，空间/时间插值技术或其他技术。

53. 发明授权

US07545687B2 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US07545687B2
公开(公告)日：2009-06-09
申请号：US11824423
申请日：2007-06-29
申请人： Jong-Won Lee , Sung-Kwon Cho
发明人： Jong-Won Lee , Sung-Kwon Cho
IPC分类号： G11C7/00
CPC分类号： G11C11/406 , G11C11/401 , G11C11/40618 , G11C29/48 , G11C29/50 , G11C29/50012
摘要： A semiconductor memory device checks a RAS timing to recognize and set an operation timing of the semiconductor memory device. The semiconductor memory device includes an input buffer, a RAS timing controller and a bank controller. The input buffer transmits a RAS timing test signal. The RAS timing controller generates a RAS timing signal. The bank controller controls a refresh operation timing in response to an output of the input buffer in a test mode and the RAS timing signal in a normal mode.
摘要翻译：半导体存储器件检查RAS定时以识别并设置半导体存储器件的操作定时。半导体存储器件包括输入缓冲器，RAS定时控制器和存储体控制器。输入缓冲器发送RAS定时测试信号。 RAS定时控制器产生RAS定时信号。银行控制器响应于测试模式下的输入缓冲器的输出和正常模式下的RAS定时信号来控制刷新操作定时。

54. 发明申请

US20090050258A1 DEVELOPMENT OF PEM FUEL CELL ELECTRODES USING PULSE ELECTRODEPOSITION 审中-公开
标题翻译：使用脉冲电沉积的PEM燃料电池电极的开发
公开(公告)号：US20090050258A1
公开(公告)日：2009-02-26
申请号：US12196630
申请日：2008-08-22
申请人： Branko N. Popov , Yoon-Seok Choi , Subasri M Ayyadurai , Jong-Won Lee
发明人： Branko N. Popov , Yoon-Seok Choi , Subasri M Ayyadurai , Jong-Won Lee
IPC分类号： B32B38/00 , C25D5/34 , C25D5/54
CPC分类号： B32B37/24 , B32B38/0008 , B32B38/0036 , B32B2037/243 , B32B2038/0092 , B32B2309/105 , B32B2310/14 , B32B2311/06 , B32B2457/18 , C25D5/18 , C25D5/48 , H01M4/8807 , H01M4/8821 , H01M4/8853 , H01M4/8882 , H01M4/8892 , H01M4/92 , H01M4/96 , H01M2008/1095
摘要： In one embodiment of the present disclosure a method for forming a PEM fuel cell electrode is provided. The method includes applying a hydrophilic wetting agent on an electrode surface. A catalyst layer is deposited on the wetted electrode surface by pulse electrodeposition, at least a portion of the catalyst penetrating the electrode surface. The electrode surface is heat treated.
摘要翻译：在本公开的一个实施例中，提供了一种用于形成PEM燃料电池电极的方法。该方法包括在电极表面上涂布亲水润湿剂。催化剂层通过脉冲电沉积沉积在润湿的电极表面上，至少一部分催化剂穿透电极表面。电极表面进行热处理。

55. 发明授权

US07474578B2 Refresh control circuit and method thereof and bank address signal change circuit and methods thereof 有权
标题翻译：刷新控制电路及其方法及其地址信号变换电路及其方法
公开(公告)号：US07474578B2
公开(公告)日：2009-01-06
申请号：US11332477
申请日：2006-01-17
申请人： Jong-Won Lee , Tao-Seong Jang
发明人： Jong-Won Lee , Tao-Seong Jang
IPC分类号： G11C7/00 , G11C8/00
CPC分类号： G11C11/40618 , G11C11/406 , G11C2211/4068
摘要： A refresh control circuit and method thereof and a bank address signal change circuit and methods thereof. The bank address signal change circuit may receive bank address signals from a bank address signal generation circuit. The received bank address signals may designate a first at least one of a plurality of memory banks. The bank address signal change circuit may determine whether the first at least one designated memory bank is associated with the longest refresh cycles from among the plurality of memory banks. Based on the determination, the bank address signal change circuit may generate a plurality of bank address signal change signals designating a second at least one of the plurality of memory banks. A refresh operation circuit may perform a refreshing operation on the second at least one memory banks in accordance with the bank address signal change signals. The bank address signal generation circuit, bank address signal change circuit and refresh operation circuit may each be included in a refresh control circuit.
摘要翻译：一种刷新控制电路及其方法及其地址信号变换电路及其方法。银行地址信号变换电路可以从存储体地址信号发生电路接收存储体地址信号。所接收的存储体地址信号可以指定多个存储体中的第一至少一个。银行地址信号变化电路可以确定第一至少一个指定的存储体是否与多个存储体中的最长刷新周期相关联。基于该确定，存储体地址信号改变电路可以产生指定多个存储体中的第二至少一个的多个存储体地址信号改变信号。刷新操作电路可以根据存储体地址信号改变信号对第二至少一个存储体执行刷新操作。存储体地址信号发生电路，存储体地址信号改变电路和刷新操作电路可以各自包括在刷新控制电路中。

56. 发明申请

US20080161183A1 Carbon-Based Composite Electrocatalysts for Low Temperature Fuel Cells 有权
标题翻译：用于低温燃料电池的碳基复合电催化剂
公开(公告)号：US20080161183A1
公开(公告)日：2008-07-03
申请号：US11930322
申请日：2007-10-31
申请人： Branko N. Popov , Jong-Won Lee , Nalini P. Subramanian , Swaminatha P. Kumaraguru , Hector R. Colon-Mercado , Vijayadurga Nallathambi , Xuguang Li , Gang WU
发明人： Branko N. Popov , Jong-Won Lee , Nalini P. Subramanian , Swaminatha P. Kumaraguru , Hector R. Colon-Mercado , Vijayadurga Nallathambi , Xuguang Li , Gang WU
IPC分类号： H01M4/88
CPC分类号： H01M4/92 , B01J21/18 , B01J37/086 , B01J37/12 , H01M4/9083 , H01M4/926 , H01M2008/1095
摘要： A process for synthesis of a catalyst is provided. The process includes providing a carbon precursor material, oxidizing the carbon precursor material whereby an oxygen functional group is introduced into the carbon precursor material, and adding a nitrogen functional group into the oxidized carbon precursor material.
摘要翻译：提供合成催化剂的方法。该方法包括提供碳前体材料，氧化碳前体材料，由此将氧官能团引入到碳前体材料中，并在氧化碳前体材料中加入氮官能团。

57. 发明授权

US07274619B2 Wordline enable circuit in semiconductor memory device and method thereof 有权
标题翻译：半导体存储器件中的字线使能电路及其方法
公开(公告)号：US07274619B2
公开(公告)日：2007-09-25
申请号：US11320967
申请日：2005-12-30
申请人： Jong-Won Lee , Shin-Ho Chu
发明人： Jong-Won Lee , Shin-Ho Chu
IPC分类号： G11C8/00
CPC分类号： G11C11/4085 , G11C11/406 , G11C2211/4065
摘要： There is provided a wordline enable circuit and its method for reducing power consumption by controlling a wordline select signal in a self-refresh mode. The wordline enable circuit includes a wordline control signal generating unit for outputting an untoggled wordline control signal while a unit wordline block is enabled in a self-refresh mode; a wordline enable signal generating unit for generating a wordline enable control signal, controlled by the untoggled wordline control signal and a toggled address signal, and a first to an n-th wordline enable power supply signals; and a wordline block enable unit for enabling each wordline, controlled by the wordline enable control signal and the first to the n-th wordline enable power supply signals.
摘要翻译：提供了一种字线使能电路及其通过在自刷新模式中控制字线选择信号来降低功耗的方法。字线使能电路包括字线控制信号生成单元，用于在自刷新模式下启用单位字线块时输出未切换的字线控制信号; 字线使能信号生成单元，用于生成由未切换的字线控制信号和切换的地址信号控制的字线使能控制信号，以及第一至第n字线使能电源信号; 以及字线块使能单元，用于启用由字线使能控制信号和第一至第n字线使能电源信号控制的每个字线。

58. 发明申请

US20060239800A1 Pulsed DC and RF physical vapor deposition cluster tool 审中-公开
标题翻译：脉冲DC和RF物理气相沉积簇工具
公开(公告)号：US20060239800A1
公开(公告)日：2006-10-26
申请号：US11114261
申请日：2005-04-26
申请人： Roger Hamamjy , Kuo-Wei Chang , Jong-Won Lee
发明人： Roger Hamamjy , Kuo-Wei Chang , Jong-Won Lee
IPC分类号： H01L21/677
CPC分类号： H01L21/68721 , H01L21/67207
摘要： Radio frequency sputtering of high resistance films may be achieved in a cluster tool. Suitable radio frequency isolation may be utilized to enable RF sputtering in an environment which may sensitive to radio frequency energy.
摘要翻译：高电阻膜的射频溅射可以在簇工具中实现。可以利用合适的射频隔离来在可能对射频能量敏感的环境中进行RF溅射。

59. 发明申请

US20060098524A1 Forming planarized semiconductor structures 审中-公开
标题翻译：形成平坦化的半导体结构
公开(公告)号：US20060098524A1
公开(公告)日：2006-05-11
申请号：US11303417
申请日：2005-12-16
申请人： Daniel Xu , Tyler Lowrey , Jong-Won Lee , Kyu Min , Donghui Lu , Jenn Chow
发明人： Daniel Xu , Tyler Lowrey , Jong-Won Lee , Kyu Min , Donghui Lu , Jenn Chow
IPC分类号： G11C8/02
CPC分类号： H01L45/16 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/1293 , H01L45/144
摘要： A planarized surface may be formed by initially forming an aperture through an insulating layer. The insulating layer and its aperture may be conformally coated with a conductive material that ultimately acts as a planarization stop. The conductive material may then be covered with another insulator that fills the remainder of the aperture. Thereafter, the structure may be planarized down to the conductive layer that acts as a planarization stop.
摘要翻译：可以通过最初通过绝缘层形成孔而形成平坦化表面。绝缘层及其孔可以共形地涂覆有最终用作平坦化停止的导电材料。然后可以用填充孔的其余部分的另一绝缘体覆盖导电材料。此后，该结构可以平坦化为用作平坦化停止的导电层。

60. 发明授权

US06976902B2 Chemical mechanical polishing apparatus 失效
标题翻译：化学机械抛光装置
公开(公告)号：US06976902B2
公开(公告)日：2005-12-20
申请号：US10850688
申请日：2004-05-21
申请人： Ja-Eung Koo , Jong-Won Lee , Sung-Bae Lee , Duk-Ho Hong , Sang-Rok Hah , Hong-Seong Son
发明人： Ja-Eung Koo , Jong-Won Lee , Sung-Bae Lee , Duk-Ho Hong , Sang-Rok Hah , Hong-Seong Son
IPC分类号： B24B37/02 , B24B37/04 , B24B49/10 , B24B49/14 , B24B1/00
CPC分类号： B24B37/013 , B24B49/10 , B24B49/14
摘要： There is provided a chemical mechanical polishing apparatus, which may include a polishing table rotated by a polishing table motor and having a pad thereon, a carrier head located above the polishing table to be rotatable by the driving of a carrier head motor and having a wafer located under the bottom thereof, a slurry supplier for supplying a slurry to the upper portion of the polishing table, a first polishing end point detector for detecting a polishing end point through the temperature change of the temperature sensor, at least one temperature sensor for detecting the temperature of a polishing region (the wafer, the pad, and the slurry), and a second polishing end point detector for detecting a polishing end point from the changes of load current, voltage, and resistance of the carrier head motor. Further, instead of the second polishing end point detector, an optical signal polishing end point detector may be employed, for detecting the polishing end point by the light illuminated on the wafer and reflected from the wafer.
摘要翻译：提供了一种化学机械抛光装置，其可以包括由抛光台马达旋转并且具有垫的抛光台，位于抛光台上方的载体头可以通过载体头马达的驱动旋转并具有晶片位于其底部的浆料供应器，用于向抛光台的上部供应浆料;第一抛光终点检测器，用于通过温度传感器的温度变化检测抛光终点;至少一个检测温度传感器抛光区域（晶片，焊盘和浆料）的温度，以及用于从承载头电动机的负载电流，电压和电阻的变化检测抛光终点的第二抛光终点检测器。此外，代替第二研磨终点检测器，可以采用光信号抛光终点检测器，用于通过照射在晶片上的光并从晶片反射来检测抛光终点。

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