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51. 发明申请

US20080264565A1 Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas 有权
标题翻译：减少暴露于含卤素等离子体的表面侵蚀速率的方法和装置
公开(公告)号：US20080264565A1
公开(公告)日：2008-10-30
申请号：US11796211
申请日：2007-04-27
申请人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
发明人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
IPC分类号： C04B35/48 , C23C16/22 , H01L21/3065
CPC分类号： C23C16/4404 , C04B35/111 , C04B35/505 , C04B41/009 , C04B41/5045 , C04B41/5346 , C04B41/87 , C04B41/91 , C04B2235/3217 , C04B2235/3222 , C04B2235/3244 , C04B2235/77 , C04B2235/785 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , C04B2235/9692 , H01J37/32467 , C04B41/4527 , C04B41/5031 , C04B41/5042 , C04B35/10 , C04B35/14 , C04B35/581
摘要： A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.
摘要翻译：一种耐半导体加工中含卤素等离子体侵蚀的陶瓷制品。陶瓷制品包括多相陶瓷，通常包括两相至三相。陶瓷由摩尔浓度范围为约50摩尔％至约75摩尔％的氧化钇形成; 摩尔浓度范围为约10摩尔％至约30摩尔％的氧化锆; 和选自氧化铝，氧化铪，氧化钪，氧化钕，氧化铌，氧化钐，氧化镱，氧化铒，氧化铈及其组合中的至少一种其它组分，摩尔浓度范围为约10摩尔％至约30摩尔％。

52. 发明申请

US20080191561A1 PARALLEL CONNECTED HTS UTILITY DEVICE AND METHOD OF USING SAME 审中-公开
标题翻译：平行连接的HTS实用设备及其使用方法
公开(公告)号：US20080191561A1
公开(公告)日：2008-08-14
申请号：US11673281
申请日：2007-02-09
申请人： DOUGLAS C. FOLTS , James Maguire , Jie Yuan , Alexis P. Malozemoff
发明人： DOUGLAS C. FOLTS , James Maguire , Jie Yuan , Alexis P. Malozemoff
IPC分类号： H02G7/00 , C04B35/45 , H01B12/00
CPC分类号： H01B12/02 , H01B12/16 , H01L39/16 , H02H7/001 , H02H9/023 , Y02E40/641 , Y02E40/647 , Y02E40/68 , Y02E40/69
摘要： A superconducting electrical cable system is configured to be included within a utility power grid. The superconducting electrical cable system includes a superconducting electrical path interconnected between a first and a second node within the utility power grid. A non-superconducting electrical path is interconnected between the first and second nodes within the utility power grid. The superconducting electrical path and the non-superconducting electrical path are electrically connected in parallel. The superconducting electrical path has a lower series impedance, when operated below a critical current level, than the non-superconducting electrical path. The superconducting electrical path has a higher series impedance, when operated at or above the critical current level, than the non-superconductor electrical path.
摘要翻译：超导电缆系统被配置为包括在公用电网内。超导电缆系统包括在公用电网内的第一和第二节点之间互连的超导电路径。非超导电路径在公用电网内的第一和第二节点之间互连。超导电路和非超导电路并联电连接。当低于临界电流水平时，超导电路径具有比非超导电路径更低的串联阻抗。当超过等于或高于临界电流水平时，超导电路具有比非超导电路更高的串联阻抗。

53. 发明申请

US20080172422A1 Method and system for retrieving advertisement information 有权
标题翻译：检索广告信息的方法和系统
公开(公告)号：US20080172422A1
公开(公告)日：2008-07-17
申请号：US11826107
申请日：2007-07-12
申请人： Yanhong Li , Hongbo Zhu , JianGuo Liu , Dan Guo , Limin Zhou , Zhan Wang , ZiZheng Liu , Jie Yuan , Chuang Wang , Wenkai Yang
发明人： Yanhong Li , Hongbo Zhu , JianGuo Liu , Dan Guo , Limin Zhou , Zhan Wang , ZiZheng Liu , Jie Yuan , Chuang Wang , Wenkai Yang
IPC分类号： G06F17/00
CPC分类号： G06F17/30867 , G06Q30/02
摘要： Method and system for retrieving advertisement information. Information characterizing a user's past search behavior is utilized in creating index data that associate individual users to advertisements. When a search request from a user is received, the index data are utilized to identify one or more advertisements with respect to the received user's search request. Such identified advertisements match the user's past search behavior.
摘要翻译：检索广告信息的方法和系统。用于表示用户过去搜索行为的信息用于创建将个人用户与广告相关联的索引数据。当接收到来自用户的搜索请求时，使用索引数据来识别关于所接收的用户的搜索请求的一个或多个广告。这种识别的广告与用户的过去搜索行为相匹配。

54. 发明授权

US06939808B2 Undoped and fluorinated amorphous carbon film as pattern mask for metal etch 失效
标题翻译：未掺杂和氟化无定形碳膜作为金属蚀刻的图案掩模
公开(公告)号：US06939808B2
公开(公告)日：2005-09-06
申请号：US10211453
申请日：2002-08-02
申请人： Eugene Tzou , Jie Yuan , Yan Ye
发明人： Eugene Tzou , Jie Yuan , Yan Ye
IPC分类号： H01L21/033 , H01L21/314 , H01L21/3213 , H01L21/302
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/02337 , H01L21/0332 , H01L21/3146 , H01L21/32139
摘要： A method for etching a metal layer formed on a substrate to form a metal line, using an amorphous carbon layer as a pattern mask. One embodiment of the method of the invention etches a metal layer formed on a substrate, for forming a metal line, by depositing an amorphous carbon layer on the metal layer, patterning the amorphous carbon layer to provide a pattern mask on the metal layer, thus exposing portions of said metal layer; and etching the exposed portions of the metal layer, to form a metal line. In an embodiment, the metal layer comprises a copper layer.
摘要翻译：一种使用无定形碳层作为图案掩模蚀刻形成在基板上以形成金属线的金属层的方法。本发明方法的一个实施方案是通过在金属层上沉积无定形碳层来蚀刻形成在基底上的金属层，以形成金属线，图案化无定形碳层以在金属层上提供图案掩模，从而暴露所述金属层的部分; 并蚀刻金属层的暴露部分，形成金属线。在一个实施例中，金属层包括铜层。

55. 发明授权

US06905968B2 Process for selectively etching dielectric layers 失效
标题翻译：用于选择性地蚀刻介电层的工艺
公开(公告)号：US06905968B2
公开(公告)日：2005-06-14
申请号：US10016562
申请日：2001-12-12
申请人： Chang-Lin Hsieh , Jie Yuan , Hui Chen , Theodoros Panagopoulos , Yan Ye
发明人： Chang-Lin Hsieh , Jie Yuan , Hui Chen , Theodoros Panagopoulos , Yan Ye
IPC分类号： H01L21/311 , H01L21/316 , H01L21/768 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31116 , H01L21/31629 , H01L21/31633 , H01L21/76808 , H01L21/76835
摘要： A method is provided for etching a dielectric structure. The dielectric structure comprises: (a) a layer of undoped silicon oxide or F-doped silicon oxide; and (b) a layer of C,H-doped silicon oxide. The dielectric structure is etched in a plasma-etching step, which plasma-etching step is conducted using a plasma source gas that comprises nitrogen atoms and fluorine atoms. As one example, the plasma source gas can comprise a gaseous species that comprises one or more nitrogen atoms and one or more fluorine atoms (e.g., NF3). As another example, the plasma source gas can comprise (a) a gaseous species that comprises one or more nitrogen atoms (e.g., N2) and (b) a gaseous species that comprises one or more fluorine atoms (e.g., a fluorocarbon gas such as CF4). In this etching step, the layer of C,H-doped silicon oxide is preferentially etched relative to the layer of undoped silicon oxide or F-doped silicon oxide. The method of the present invention is applicable, for example, to dual damascene structures.
摘要翻译：提供了蚀刻电介质结构的方法。电介质结构包括：（a）一层未掺杂的氧化硅或掺杂F的氧化硅; 和（b）C，H掺杂的氧化硅层。在等离子体蚀刻步骤中蚀刻电介质结构，使用包含氮原子和氟原子的等离子体源气体进行等离子体蚀刻步骤。作为一个示例，等离子体源气体可以包括包含一个或多个氮原子和一个或多个氟原子（例如，NF 3 N）的气态物质。作为另一示例，等离子体源气体可以包括（a）包含一个或多个氮原子（例如，N 2）的气态物质和（b）包含一个或多个氟原子的气态物质（例如碳氟化合物气体，例如CF 4）。在该蚀刻步骤中，相对于未掺杂的氧化硅层或掺杂F的氧化硅层优先蚀刻C，H掺杂的氧化硅层。本发明的方法例如适用于双镶嵌结构。

56. 发明授权

US06882865B2 Fixing structure for input keys 失效
标题翻译：输入键固定结构
公开(公告)号：US06882865B2
公开(公告)日：2005-04-19
申请号：US09952204
申请日：2001-09-10
申请人： Jie Yuan , Chengshing Lai
发明人： Jie Yuan , Chengshing Lai
IPC分类号： H01H13/702 , H04M1/23 , H04M1/725 , H04M1/00
CPC分类号： H04M1/23 , H01H13/702 , H01H2213/01 , H01H2219/04 , H01H2229/026 , H01H2229/034 , H04M1/725
摘要： The present invention offers a fixing structure for input keys, applied in personal digital assistant provided with function of a mobile telephone. On the backside of the case of a framework are provided a plurality of positioning elements and a plurality of thermomeltable elements respectively. On said positioning elements and thermomeltable elements are sheathed consecutively with elastic sheet, plate, circuit board and fixing plate. Each end of said thermomeltable elements is accommodated in corresponding recessed hole provided in said fixing plate to avoid interference with other parts. Pressing keys set up on elastic sheet can be just protruded from the case respectively, and by means of a bottom plate kept flat against the whole bottom, the fixing structure is completed. In this way, not only is the aim to decrease thickness of PDA achieved, but also it is convenient for users to carry.
摘要翻译：本发明提供一种应用于具有移动电话功能的个人数字助理中的输入键的固定结构。在框架的壳体的背面分别设置有多个定位元件和多个热熔性元件。在所述定位元件和热熔性元件上连续地用弹性片，板，电路板和固定板包覆。所述热熔性元件的每个端部容纳在设置在所述固定板中的相应的凹孔中，以避免与其它部件的干涉。弹性片上设置的按键可以分别从壳体突出，并且通过保持平坦的底板抵住整个底部，完成固定结构。这样做不仅可以达到减轻PDA厚度的目的，而且可以方便用户携带。

57. 发明授权

US06592707B2 Corrosion-resistant protective coating for an apparatus and method for processing a substrate 失效
公开(公告)号：US06592707B2
公开(公告)日：2003-07-15
申请号：US10033115
申请日：2001-10-22
申请人： Hong Shih , Nianci Han , Jie Yuan , Joe Sommers , Diana Ma , Paul Vollmer , Michael C. Willson
发明人： Hong Shih , Nianci Han , Jie Yuan , Joe Sommers , Diana Ma , Paul Vollmer , Michael C. Willson
IPC分类号： H05H100
CPC分类号： C09D4/00 , C23C16/4404 , H01J37/32477 , C08F222/1006
摘要： A corrosion-resistant protective coating for an apparatus and method of processing a substrate in a chamber containing a plasma of a processing gas. The protective coating or sealant is used to line or coat inside surfaces of a reactor chamber that are exposed to corrosive processing gas that forms the plasma. The protective coating comprises at least one polymer resulting from a monomeric anaerobic chemical mixture having been cured in a vacuum in the absence of oxygen. The protective coating includes a major proportion of at least one methacrylate compound and a minor proportion of an activator compound which initiates the curing process of the monomeric anaerobic mixture in the absence of oxygen or air.

58. 发明授权

US06559942B2 Monitoring substrate processing with optical emission and polarized reflected radiation 失效
公开(公告)号：US06559942B2
公开(公告)日：2003-05-06
申请号：US09803080
申请日：2001-03-08
申请人： Zhifeng Sui , Coriolan Frum , Jie Yuan , Chang-Lin Hsieh
发明人： Zhifeng Sui , Coriolan Frum , Jie Yuan , Chang-Lin Hsieh
IPC分类号： G01J400
CPC分类号： G01N21/956 , G01N21/21 , G01N21/71 , G01N21/9501 , H01J37/32935 , H01L21/31116 , H01L21/31633
摘要： A substrate is etched in a process zone by placing the substrate in the process zone, providing an energized process gas in the process zone, and exhausting the process gas. A first stage of the etching process is monitored to determine completion of the first stage by detecting the intensities of one or more wavelengths of a radiation emission generated by the energized gas, generating a first signal in relation to the detected intensities, and evaluating the first signal. A second stage of the etching process is monitored to determine completion of the second stage by detecting the intensities of one or more wavelengths of a polarized radiation reflected from the substrate being etched, generating a second signal in relation to the detected intensities, and evaluating the second signal.

59. 发明授权

US6080529A Method of etching patterned layers useful as masking during subsequent etching or for damascene structures 失效
标题翻译：在随后的蚀刻或镶嵌结构期间蚀刻用作掩模的图案化层的方法
公开(公告)号：US6080529A
公开(公告)日：2000-06-27
申请号：US174763
申请日：1998-10-19
申请人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
发明人： Yan Ye , Pavel Ionov , Allen Zhao , Peter Chang-Lin Hsieh , Diana Xiaobing Ma , Chun Yan , Jie Yuan
IPC分类号： H01L21/302 , H01L21/027 , H01L21/311 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/3213 , G03C5/58
CPC分类号： H01L21/0274 , H01L21/31138 , H01L21/31144 , H01L21/32139 , H01L21/31116 , H01L21/3127 , H01L21/3146 , H01L21/31612 , H01L21/32136
摘要： A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.
摘要翻译：本发明的第一实施例涉及一种图案化半导体器件导电特征的方法，同时允许容易地去除在蚀刻工艺完成之后保留的任何残留掩模层。使用多层掩模结构，其包括由无机掩模材料的图案化层或由图案化的高温可成像有机掩蔽材料层覆盖的高温有机基掩蔽材料层。无机掩模材料用于将图案转印到高温有机基掩蔽材料上，然后除去。高温有机基掩蔽材料用于转移图案，然后如果需要可以去除。这种方法在铝的图案蚀刻中也是有用的，即使在较低温度下可以蚀刻铝。本发明的第二个实施方案涉及可用于图案化有机聚合物层如低k电介质或其它有机聚合物界面层的专用蚀刻化学物质。该蚀刻化学物质可用于在导电层的蚀刻过程中的掩模开口，或者可用于蚀刻镶嵌结构，其中金属填充层施加在图案化有机基介质层的表面上。蚀刻化学提供了使氧化物，氟，氯和溴含量最小化的蚀刻剂等离子体物质的使用。

60. 发明授权

US08625012B2 Apparatus and method for improving dynamic range and linearity of CMOS image sensor 有权
标题翻译：提高CMOS图像传感器动态范围和线性度的装置和方法
公开(公告)号：US08625012B2
公开(公告)日：2014-01-07
申请号：US12697061
申请日：2010-01-29
申请人： Jie Yuan , Ho Yeung Chan
发明人： Jie Yuan , Ho Yeung Chan
IPC分类号： H04N3/14 , H04N5/335 , H01L27/00
CPC分类号： H04N5/37455 , H04N5/35527 , H04N5/365 , H04N5/3658
摘要： Described herein is a circuit and related method for improving the dynamic range and the linearity characteristic of a CMOS image sensor. In various embodiments of the CMOS image sensor, a current sampler, a comparator, and a 1-bit memory are incorporated in each pixel circuit. In the image sensor, pixels are arranged in columns and a column slice is used to read the digital and analog singles from each column. In addition, a calibration circuit is incorporated in the sensor circuit for providing calibration current, which is used to generate calibration parameter. The image sensor operates in three non-overlapping modes: the difference mode, the WDR mode, and the calibration mode. The image sensor is switched among the three modes by control signals, which are provided to the image sensor by various control circuits. The image sensor normally operates in the difference mode and switches to the WDR mode when the difference between consecutive frames is over a threshold. The calibration mode allows the image sensor generate calibration parameters which are used to improve the linearity of the sensor through a interpolation method.
摘要翻译：这里描述了一种用于改善CMOS图像传感器的动态范围和线性特性的电路和相关方法。在CMOS图像传感器的各种实施例中，电流采样器，比较器和1位存储器被并入每个像素电路中。在图像传感器中，像素按列排列，列切片用于从每列读取数字和模拟单声道。此外，校准电路被并入传感器电路中，用于提供用于产生校准参数的校准电流。图像传感器以三种不重叠的模式操作：差模式，WDR模式和校准模式。通过控制信号在三种模式之间切换图像传感器，控制信号由各种控制电路提供给图像传感器。图像传感器通常在差模式下工作，当连续帧之间的差超过阈值时，图像传感器切换到WDR模式。校准模式允许图像传感器生成用于通过插值方法提高传感器线性度的校准参数。

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