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51. 发明授权

US09054224B2 Method for the wafer-level integration of shape memory alloy wires 有权
标题翻译：形状记忆合金线晶圆级整合的方法
公开(公告)号：US09054224B2
公开(公告)日：2015-06-09
申请号：US13885257
申请日：2011-11-22
申请人： Stefan Braun , Frank Niklaus , Andreas Fischer , Henrik Gradin
发明人： Stefan Braun , Frank Niklaus , Andreas Fischer , Henrik Gradin
IPC分类号： H01L21/44 , H01L23/52 , H01L23/00 , B23K20/00
CPC分类号： H01L24/85 , B23K20/007 , C22C19/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/78 , H01L24/94 , H01L2224/04042 , H01L2224/05571 , H01L2224/05599 , H01L2224/45 , H01L2224/45015 , H01L2224/45139 , H01L2224/45155 , H01L2224/4813 , H01L2224/48453 , H01L2224/48463 , H01L2224/78301 , H01L2224/85045 , H01L2224/85099 , H01L2224/85205 , H01L2224/85345 , H01L2224/85375 , H01L2224/85385 , H01L2224/85399 , H01L2224/858 , H01L2224/85855 , H01L2224/85899 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2224/45099 , H01L2924/00 , H01L2224/05552 , H01L2924/01049 , H01L2924/00015 , H01L2924/20753 , H01L2924/01022
摘要： The present invention relates to a method to attach a shape memory alloy wire to a substrate, where the wire is mechanically attached into a 3D structure on the substrate. The present invention also relates to a device comprising a shape memory alloy wire attached to a substrate, where the wire is mechanically attached into a 3D structure on the substrate.
摘要翻译：本发明涉及一种将形状记忆合金线附着到基底上的方法，其中线被机械连接到基底上的3D结构中。本发明还涉及一种装置，其包括附接到基底的形状记忆合金丝，其中线被机械地附接到基底上的3D结构中。

52. 发明授权

US08590813B2 Rotary atomizer for particulate paints 有权
公开(公告)号：US08590813B2
公开(公告)日：2013-11-26
申请号：US13414194
申请日：2012-03-07
申请人： Kurt Vetter , Rolf Schneider , Andreas Fischer , Robert Heldt
发明人： Kurt Vetter , Rolf Schneider , Andreas Fischer , Robert Heldt
IPC分类号： B05B1/26
CPC分类号： B05B3/1014
摘要： A rotary atomizer applies particulate paints with good color matching by reducing paint droplet size deviation and then optimizing the other paint spraying parameters. Paint droplet size parameters are reduced by using a bell cup having reduced flow deviations, including an overflow surface having a generally constant angle between a deflector and an atomizing edge.

53. 发明授权

US08573153B2 Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode 有权
标题翻译：用于半导体处理等离子体反应器的多部分电极和替换多部分电极的一部分的方法
公开(公告)号：US08573153B2
公开(公告)日：2013-11-05
申请号：US12954060
申请日：2010-11-24
申请人： Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
发明人： Andreas Fischer , William S. Kennedy , Peter Loewenhardt , David Trussell
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： H01J37/32541 , H01J37/32009
摘要： An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.
摘要翻译：改进的上电极系统具有多部分电极，其中具有高磨损的电极的中心部分可以独立于电极的外周部分进行替换。上电极可用于等离子体处理系统中，例如通过蚀刻或CVD来处理半导体衬底。多部分上电极系统对于大尺寸晶片处理室是特别有用的，例如用于单片电极不可用或成本高的300mm晶片处理室。

54. 发明授权

US08337713B2 Methods for RF pulsing of a narrow gap capacitively coupled reactor 有权
标题翻译：窄间隙电容耦合反应器的RF脉冲的方法
公开(公告)号：US08337713B2
公开(公告)日：2012-12-25
申请号：US13177627
申请日：2011-07-07
申请人： Peter Loewenhardt , Mukund Srinivasan , Andreas Fischer
发明人： Peter Loewenhardt , Mukund Srinivasan , Andreas Fischer
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165
摘要： A method for etching a layer over a substrate in a process chamber, wherein the process chamber including a first electrode and a second electrode and the first electrode is disposed opposite of the second electrode is provided. The method includes placing the substrate on the second electrode and providing an etching gas into the process chamber. The method also includes providing a first radio frequency (RF) signal into the process chamber and modulating the first RF signal. The method further includes providing a second RF signal into the process chamber and modulating the second RF signal.
摘要翻译：提供了一种用于在处理室中的衬底上蚀刻层的方法，其中包括第一电极和第二电极的处理室以及与第二电极相对设置的第一电极。该方法包括将基板放置在第二电极上并向处理室提供蚀刻气体。该方法还包括向处理室提供第一射频（RF）信号并调制第一RF信号。该方法还包括向处理室提供第二RF信号并调制第二RF信号。

55. 发明授权

US08323523B2 High pressure bevel etch process 有权
标题翻译：高压斜面蚀刻工艺
公开(公告)号：US08323523B2
公开(公告)日：2012-12-04
申请号：US13105674
申请日：2011-05-11
申请人： Tong Fang , Yunsang S. Kim , Andreas Fischer
发明人： Tong Fang , Yunsang S. Kim , Andreas Fischer
IPC分类号： B44C1/22
CPC分类号： H01L21/02087 , H01J37/32366 , H01J37/32385 , H01L21/02021 , H01L21/3065 , H01L21/32136 , H01L21/32138
摘要： A method of bevel edge processing a semiconductor in a bevel plasma processing chamber in which the semiconductor substrate is supported on a semiconductor substrate support is provided. The method comprises evacuating the bevel etcher to a pressure of 3 to 100 Torr and maintaining RF voltage under a threshold value; flowing a process gas into the bevel plasma processing chamber; energizing the process gas into a plasma at a periphery of the semiconductor substrate; and bevel processing the semiconductor substrate with the plasma.
摘要翻译：提供了一种在半导体衬底支撑在半导体衬底支撑件上的斜面等离子体处理室中斜面加工半导体的方法。该方法包括将斜面蚀刻机抽空至3至100托的压力并将RF电压维持在阈值以下; 将工艺气体流入斜面等离子体处理室; 使所述工艺气体在所述半导体衬底的外围处于等离子体中; 并用等离子体对半导体衬底进行斜面加工。

56. 发明申请

US20120175060A1 DETECTION OF ARCING EVENTS IN WAFER PLASMA PROCESSING THROUGH MONITORING OF TRACE GAS CONCENTRATIONS 审中-公开
标题翻译：通过监测跟踪气体浓度来检测水平等离子体处理中的ARCING事件
公开(公告)号：US20120175060A1
公开(公告)日：2012-07-12
申请号：US13422670
申请日：2012-03-16
申请人： Eric Hudson , Andreas Fischer
发明人： Eric Hudson , Andreas Fischer
IPC分类号： H01L21/3065 , C23C16/50
CPC分类号： H01J37/32972 , H01J37/32935
摘要： A method of detecting substrate arcing in a semiconductor plasma processing apparatus is provided. A substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. Process gas is introduced into the reaction chamber. A plasma is generated from the process gas and the substrate is processed with the plasma. Intensities of real-time spectrometry signals of selected gas species produced in the reaction chamber during plasma processing are monitored. The selected gas species are generated by a substrate arcing event. The arcing event is detected when the intensities are above a threshold value.
摘要翻译：提供了一种在半导体等离子体处理装置中检测基板电弧的方法。将衬底放置在等离子体处理设备的反应室中的衬底支撑件上。将工艺气体引入反应室。从处理气体产生等离子体，并用等离子体处理衬底。监测在等离子体处理期间在反应室中产生的选定气体种类的实时光谱信号的强度。选择的气体种类通过基板电弧事件产生。当强度高于阈值时，检测到电弧事件。

57. 发明申请

US20120067736A1 PROCESS FOR PREPARING UNSYMMETRICAL BIARYL ALCOHOLS 有权
标题翻译：制备不对称二元醇的方法
公开(公告)号：US20120067736A1
公开(公告)日：2012-03-22
申请号：US13375100
申请日：2010-06-01
申请人： Florian Stecker , Andreas Fischer , Itamar Michael Malkowsky , Siegfried R. Waldvogel , Axel Kirste
发明人： Florian Stecker , Andreas Fischer , Itamar Michael Malkowsky , Siegfried R. Waldvogel , Axel Kirste
IPC分类号： C25B3/10
CPC分类号： C25B3/10
摘要： The invention relates to a process for preparing unsymmetrical biaryl by anodic dehydrodimerization of substituted ortho-alkoxyaryl alcohols in the presence of partially fluorinated and/or perfluorinated mediators and a supporting electrolyte.
摘要翻译：本发明涉及通过在部分氟化和/或全氟化的介质和支持电解质的存在下通过取代的邻 - 烷氧基芳基醇的阳离子脱氢二聚化来制备不对称联芳基的方法。

58. 发明授权

US08097293B2 Operating method for an atomiser and a corresponding coating apparatus 有权
标题翻译：雾化器和相应涂层设备的操作方法
公开(公告)号：US08097293B2
公开(公告)日：2012-01-17
申请号：US12162457
申请日：2007-09-19
申请人： Benjamin Wöhr , Hans-Jürgen Nolte , Andreas Fischer , Peter Marquardt , Frank Herre , Marcus Frey
发明人： Benjamin Wöhr , Hans-Jürgen Nolte , Andreas Fischer , Peter Marquardt , Frank Herre , Marcus Frey
IPC分类号： B05D1/06 , B05B5/057
CPC分类号： B05B3/1014 , B05B5/0403 , B05B5/0426 , B05B12/08 , B05B12/084 , B05B12/10 , B05B13/0405 , B05B13/0426 , B05B13/0431
摘要： The invention relates to an operating method for an atomiser (1) for the coating of structural components, particularly of vehicle body parts, with the following steps: Application of a spray jet of a coating agent through the atomiser (1); discharge of a first guide air flow (11) for the formation of a spray jet; determination of at least one application parameter (η, γ, T, BC/CC, Qvarnish, n, U,) which reproduces a property (η, γ, T, BC/CC) of the applied coating agent or an operating variable (Qvarnish, n, U) of the atomiser (1) as well as influencing of the first guide air flow (11) as a factor of the application parameter (η, γ, T, BC/CC, Qvarnish, n, U,). Within the framework of the invention, there is the alternative option that fluctuations of the application parameters and, based thereon, variations of the spray jet width are taken into account by means of an adaptation of the path spacing (d) between the adjacent coating agent paths for the purpose of keeping the path overlapping constant. Furthermore, the invention comprises a corresponding coating apparatus.
摘要翻译：本发明涉及一种用于涂覆结构部件，特别是车身部件的雾化器（1）的操作方法，具有以下步骤：通过喷雾器（1）施加涂覆剂的喷射射流; 排出用于形成喷射射流的第一引导空气流（11）; 确定再现施加的涂覆剂的性质（＆eegr，γ，T，BC / CC）的至少一个应用参数（＆eegr;γ，T，BC / CC，Qvarnish，n，U）雾化器（1）的变量（Qvarnish，n，U）以及第一引导空气流（11）的影响作为应用参数（＆egr，γ，T，BC / CC，Qvarnish，n， U，）。在本发明的框架内，存在替代选择，通过适应相邻涂层剂之间的路径间距（d）来考虑应用参数的波动和基于其的喷雾宽度的变化，保持路径重叠的路径不变。此外，本发明包括相应的涂覆装置。

59. 外观设计

USD636843S1 Rotary atomizer 有权
公开(公告)号：USD636843S1
公开(公告)日：2011-04-26
申请号：US29361653
申请日：2010-05-13
申请人： Hans-Jürgen Nolte , Andreas Fischer , Peter Marquardt , Jürgen Berkowitsch , Joachim Schneider
设计人： Hans-Jürgen Nolte , Andreas Fischer , Peter Marquardt , Jürgen Berkowitsch , Joachim Schneider

60. 发明申请

US20110022215A1 APPARATUS TO DETECT FAULT CONDITIONS OF A PLASMA PROCESSING REACTOR 审中-公开
标题翻译：检测等离子体加工反应器的故障条件的装置
公开(公告)号：US20110022215A1
公开(公告)日：2011-01-27
申请号：US12898342
申请日：2010-10-05
申请人： Douglas Keil , Eric Hudson , Chris Kimball , Andreas Fischer
发明人： Douglas Keil , Eric Hudson , Chris Kimball , Andreas Fischer
IPC分类号： G06F17/00 , G06F15/00
CPC分类号： C23C16/52 , C23C16/509 , H01J37/32935 , H01J37/3299
摘要： A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.
摘要翻译：提供了一种用于等离子体处理室的故障检测方法。该方法包括监测等离子体室内的等离子体参数并分析所得到的信息。这样的分析使得能够在晶片处理过程中检测等离子体处理反应器中的故障和故障模式的诊断。该方法包括测量作为时间的函数的等离子体参数并分析所得到的数据。数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。可以用诸如探针的检测器进行监测，该探针优选地保持在与腔室内的表面基本上共面的等离子体室内，并且直接测量净离子通量和其它等离子体参数。检测器优选地位于反应器内的接地表面，例如接地喷头电极，并且可以是平面离子通量探针（PIF）型或非电容型。可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。如果检测器是探针，则探针可以嵌入在等离子体处理室的一部分中，并且可以包括一个或多个气体馈通孔。

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