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51. 发明授权

US08456011B2 Method to control metal semiconductor micro-structure 有权
公开(公告)号：US08456011B2
公开(公告)日：2013-06-04
申请号：US13006664
申请日：2011-01-14
申请人： Christian Lavoie , Ahmet S. Ozcan , Zhen Zhang , Bin Yang
发明人： Christian Lavoie , Ahmet S. Ozcan , Zhen Zhang , Bin Yang
IPC分类号： H01L23/532
CPC分类号： H01L21/768 , H01L21/28518 , H01L23/485 , H01L29/456 , H01L29/66545 , H01L29/66575 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a metal semiconductor alloy that includes forming an intermixed metal semiconductor region to a first depth of a semiconductor substrate without thermal diffusion. The intermixed metal semiconductor region is annealed to form a textured metal semiconductor alloy. A second metal layer is formed on the textured metal semiconductor alloy. The second metal layer on the textured metal semiconductor alloy is then annealed to form a metal semiconductor alloy contact, in which metal elements from the second metal layer are diffused through the textured metal semiconductor alloy to provide a templated metal semiconductor alloy. The templated metal semiconductor alloy includes a grain size that is greater than 2× for the metal semiconductor alloy, which has a thickness ranging from 15 nm to 50 nm.

52. 发明申请

US20130062677A1 SELF-ALIGNED BOTTOM PLATE FOR METAL HIGH-K DIELECTRIC METAL INSULATOR METAL (MIM) EMBEDDED DYNAMIC RANDOM ACCESS MEMORY 有权
标题翻译：用于金属高K介电金属绝缘体金属（MIM）嵌入式动态随机存取存储器的自对准底板
公开(公告)号：US20130062677A1
公开(公告)日：2013-03-14
申请号：US13228767
申请日：2011-09-09
申请人： Zhengwen Li , Damon B. Farmer , Michael P. Chudzik , Keith Kwong Hon Wong , Jian Yu , Zhen Zhang , Chengwen Pei
发明人： Zhengwen Li , Damon B. Farmer , Michael P. Chudzik , Keith Kwong Hon Wong , Jian Yu , Zhen Zhang , Chengwen Pei
IPC分类号： H01L21/20 , H01L27/06
CPC分类号： H01L27/10829 , H01L21/84 , H01L27/10861 , H01L27/1203 , H01L28/91 , H01L29/945
摘要： A memory device, and a method of forming a memory device, is provided that includes a capacitor with a lower electrode of a metal semiconductor alloy. In one embodiment, the memory device includes a trench present in a semiconductor substrate including a semiconductor on insulating (SOI) layer on top of a buried dielectric layer, wherein the buried dielectric layer is on top of a base semiconductor layer. A capacitor is present in the trench, wherein the capacitor includes a lower electrode of a metal semiconductor alloy having an upper edge that is self-aligned to the upper surface of the base semiconductor layer, a high-k dielectric node layer, and an upper electrode of a metal. The memory device further includes a pass transistor in electrical communication with the capacitor.
摘要翻译：提供一种存储器件和形成存储器件的方法，其包括具有金属半导体合金的下电极的电容器。在一个实施例中，存储器件包括存在于半导体衬底中的沟槽，其包括在掩埋介电层顶部上的绝缘（SOI）半导体层，其中所述掩埋介电层位于基底半导体层的顶部。电容器存在于沟槽中，其中电容器包括金属半导体合金的下电极，其具有与基底半导体层的上表面自对准的上边缘，高k电介质节点层和上层金属电极。存储器件还包括与电容器电连通的传输晶体管。

53. 发明授权

US08278200B2 Metal-semiconductor intermixed regions 有权
标题翻译：金属半导体混合区域
公开(公告)号：US08278200B2
公开(公告)日：2012-10-02
申请号：US13012043
申请日：2011-01-24
申请人： Christian Lavoie , Tak H. Ning , Ahmet S. Ozcan , Bin Yang , Zhen Zhang
发明人： Christian Lavoie , Tak H. Ning , Ahmet S. Ozcan , Bin Yang , Zhen Zhang
IPC分类号： H01L21/20
CPC分类号： H01L21/28518
摘要： In one exemplary embodiment, a program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine for performing operations, said operations including: depositing a first layer having a first metal on a surface of a semiconductor structure, where depositing the first layer creates a first intermix region at an interface of the first layer and the semiconductor structure; removing a portion of the deposited first layer to expose the first intermix region; depositing a second layer having a second metal on the first intermix region, where depositing the second layer creates a second intermix region at an interface of the second layer and the first intermix region; removing a portion of the deposited second layer to expose the second intermix region; and performing at least one anneal on the semiconductor structure.
摘要翻译：在一个示例性实施例中，一种可由机器读取的程序存储设备，其有形地体现了可由机器执行的用于执行操作的指令程序，所述操作包括：在半导体结构的表面上沉积具有第一金属的第一层，第一层在第一层和半导体结构的界面处形成第一混合区; 去除沉积的第一层的一部分以暴露第一混合区; 在所述第一混合区域上沉积具有第二金属的第二层，其中沉积所述第二层在所述第二层和所述第一混合区的界面处产生第二混合区; 去除沉积的第二层的一部分以暴露第二混合区; 以及在所述半导体结构上执行至少一个退火。

54. 发明授权

US08168503B2 Method for forming an SOI schottky source/drain device to control encroachment and delamination of silicide 有权
标题翻译：用于形成SOI肖特基源极/漏极器件以控制硅化物侵蚀和分层的方法
公开(公告)号：US08168503B2
公开(公告)日：2012-05-01
申请号：US12726736
申请日：2010-03-18
申请人： Marwan H. Khater , Christian Lavoie , Bin Yang , Zhen Zhang
发明人： Marwan H. Khater , Christian Lavoie , Bin Yang , Zhen Zhang
IPC分类号： H01L21/336
CPC分类号： H01L29/7839 , H01L29/78654
摘要： A method of fabricating a Schottky field effect transistor is provided that includes providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10.0 nm. A gate structure is formed directly on the first semiconductor layer. A raised semiconductor material is selectively formed on the first semiconductor layer adjacent to the gate structure. The raised semiconductor material is converted into Schottky source and drain regions composed of a metal semiconductor alloy. A non-reacted semiconductor material is present between the Schottky source and drain regions and the dielectric layer.
摘要翻译：提供一种制造肖特基场效应晶体管的方法，其包括提供具有覆盖在电介质层上的至少第一半导体层的衬底，其中第一半导体层具有小于10.0nm的厚度。栅极结构直接形成在第一半导体层上。凸起的半导体材料选择性地形成在与栅极结构相邻的第一半导体层上。凸起的半导体材料被转换成由金属半导体合金构成的肖特基源极和漏极区域。在肖特基源极和漏极区域与电介质层之间存在未反应的半导体材料。

55. 发明申请

US20120009771A1 Implantless Dopant Segregation for Silicide Contacts 有权
标题翻译：用于硅胶接触的无植入物掺杂剂分离
公开(公告)号：US20120009771A1
公开(公告)日：2012-01-12
申请号：US12833272
申请日：2010-07-09
申请人： Cyril Cabral, JR. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
发明人： Cyril Cabral, JR. , John M. Cotte , Dinesh R. Koli , Laura L. Kosbar , Mahadevaiyer Krishnan , Christian Lavoie , Stephen M. Rossnagel , Zhen Zhang
IPC分类号： H01L21/3205
CPC分类号： H01L21/28512 , H01L21/28518 , H01L29/456
摘要： A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.
摘要翻译：在半导体材料和硅化物层之间的结处形成分离的界面掺杂剂层的方法包括在半导体材料上沉积掺杂的金属层; 退火所述掺杂金属层和所述半导体材料，其中所述退火使所述掺杂金属层的一部分和所述半导体材料的一部分反应以在所述半导体材料上形成所述硅化物层，并且其中所述退火还导致所述分离的界面掺杂剂层，以形成在半导体材料和硅化物层之间，分离的界面掺杂剂层包含来自掺杂金属层的掺杂剂; 以及从所述硅化物层去除所述掺杂金属层的未反应部分。

56. 发明申请

US20110298056A1 CONTACT RESISTIVITY REDUCTION IN TRANSISTOR DEVICES BY DEEP LEVEL IMPURITY FORMATION 有权
标题翻译：通过深度水平形成，在晶体管器件中接触电阻降低
公开(公告)号：US20110298056A1
公开(公告)日：2011-12-08
申请号：US12793046
申请日：2010-06-03
申请人： Tak Hung Ning , Zhen Zhang
发明人： Tak Hung Ning , Zhen Zhang
IPC分类号： H01L23/532 , H01L29/78 , H01L21/22
CPC分类号： H01L29/0847 , H01L21/26506 , H01L21/26513 , H01L21/28518 , H01L21/823814 , H01L21/823835 , H01L29/456 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a low resistance contact structure in a semiconductor device includes forming a doped semiconductor region in a semiconductor substrate; forming a deep level impurity region at an upper portion of the doped semiconductor region; activating dopants in both the doped semiconductor region and the deep level impurity region by annealing; and forming a metal contact over the deep level impurity region so as to create a metal-semiconductor interface therebetween.
摘要翻译：在半导体器件中形成低电阻接触结构的方法包括在半导体衬底中形成掺杂半导体区域; 在所述掺杂半导体区域的上部形成深层杂质区域; 通过退火激活掺杂半导体区域和深层杂质区域中的掺杂剂; 以及在深层杂质区上形成金属接触，从而在它们之间产生金属 - 半导体界面。

57. 发明申请

US20110212405A1 METHOD FOR THE PRODUCTION OF ULTRAPURE PHOSPHORUS BY ZONE MELTING IN A NON-FLAMMABLE ENVIRONMENT, AND THE APPARATUS USED IN SUCH METHOD 审中-公开
标题翻译：在非易燃环境中通过区域熔融生产超声波磷的方法，以及以这种方法使用的装置
公开(公告)号：US20110212405A1
公开(公告)日：2011-09-01
申请号：US13026506
申请日：2011-02-14
申请人： Yongli Mi , Xiaoping Wang , Zhen Zhang , Xiaojin He
发明人： Yongli Mi , Xiaoping Wang , Zhen Zhang , Xiaojin He
IPC分类号： F24J3/00
CPC分类号： C01B25/04 , Y02P20/123
摘要： In general, the present invention relates to the production of ultrapure phosphorus. In particular, the present invention relates to the method for the production of ultrapure phosphorus by zone melting in a Non-flammable environment and the equipments used in such method. The process of the present invention is clean, chemical free, fast, and energy efficient.
摘要翻译：通常，本发明涉及超纯磷的生产。特别地，本发明涉及在不易燃环境中通过区域熔融生产超纯磷的方法和该方法中使用的设备。本发明的方法是清洁，无化学，快速和节能的。

58. 发明申请

US20100005055A1 MULTI-TENANCY DATA STORAGE AND ACCESS METHOD AND APPARATUS 失效
标题翻译：多元数据存储和访问方法和设备
公开(公告)号：US20100005055A1
公开(公告)日：2010-01-07
申请号：US12493315
申请日：2009-06-29
申请人： Wenhao An , Bo Gao , Chang Jie Guo , Zhong Su , Wei Sun , Zhi Hu Wang , Zhen Zhang
发明人： Wenhao An , Bo Gao , Chang Jie Guo , Zhong Su , Wei Sun , Zhi Hu Wang , Zhen Zhang
IPC分类号： G06F17/30
CPC分类号： G06F17/30448 , G06F17/30566
摘要： A method, apparatus, and a computer program product for storing and accessing multi-tenancy data. The method includes the steps of: creating a plurality of table sets in one or more databases, wherein each table set is used to store data of a group of tenants selected from a plurality of tenants; accessing data of a tenant in a table set in response to receiving a data access request from the tenant; and recording relationships between the tenants and the table sets in a multi-tenancy metadata repository, wherein the step of accessing the data of the tenant comprises the steps of finding the table set by querying the metadata repository and accessing the data of the tenant in the table set based on the result received from the query of the metadata repository.
摘要翻译：一种用于存储和访问多租户数据的方法，装置和计算机程序产品。该方法包括以下步骤：在一个或多个数据库中创建多个表集合，其中每个表集合用于存储从多个租户中选择的一组租户的数据; 响应于从租户接收到数据访问请求，访问表中的租户的数据; 以及在多租户元数据存储库中记录所述租户和所述表集合之间的关系，其中，访问所述承租人的数据的步骤包括以下步骤：通过查询所述元数据存储库并访问所述租户的数据来查找所述表基于从元数据存储库的查询获得的结果的表集合。

59. 外观设计

USD598911S1 All in one computer 有权
公开(公告)号：USD598911S1
公开(公告)日：2009-08-25
申请号：US29321034
申请日：2008-07-09
申请人： Qun Wang , Yun-Lung Chen , Zhen Zhang , Hong-Jin Wu
设计人： Qun Wang , Yun-Lung Chen , Zhen Zhang , Hong-Jin Wu

60. 发明授权

US07533085B2 Method for searching deep web services 失效
标题翻译：搜索深度Web服务的方法
公开(公告)号：US07533085B2
公开(公告)日：2009-05-12
申请号：US11503754
申请日：2006-08-14
申请人： Yuan-chi Chang , Lipyeow Lim , Min Wang , Zhen Zhang
发明人： Yuan-chi Chang , Lipyeow Lim , Min Wang , Zhen Zhang
IPC分类号： G06F17/30
CPC分类号： G06F17/3089 , Y10S707/99933
摘要： A method for searching deep web services is provided. The method in one aspect allows organizing communities, sources and schema attributes in a multi-tier containment relationship; searching representative schema attributes in one or more communities; searching representative services in one or more communities; searching for related schema attributes; and searching for related communities.
摘要翻译：提供了一种用于搜索深度Web服务的方法。该方法在一个方面允许组织多层遏制关系中的社区，源和模式属性; 在一个或多个社区中搜索代表性模式属性; 在一个或多个社区寻找代表服务; 搜索相关的模式属性; 并搜索相关社区。

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